JP2006215552A5 - - Google Patents
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- JP2006215552A5 JP2006215552A5 JP2006016905A JP2006016905A JP2006215552A5 JP 2006215552 A5 JP2006215552 A5 JP 2006215552A5 JP 2006016905 A JP2006016905 A JP 2006016905A JP 2006016905 A JP2006016905 A JP 2006016905A JP 2006215552 A5 JP2006215552 A5 JP 2006215552A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- chromium
- patterned
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims description 236
- 238000000034 method Methods 0.000 claims description 140
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 133
- 238000005530 etching Methods 0.000 claims description 108
- 229910052804 chromium Inorganic materials 0.000 claims description 101
- 239000011651 chromium Substances 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 78
- 239000010453 quartz Substances 0.000 claims description 74
- 230000008569 process Effects 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 37
- 239000011261 inert gas Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000013016 damping Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 71
- 230000010363 phase shift Effects 0.000 description 32
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 20
- 229910052731 fluorine Inorganic materials 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 13
- 239000011737 fluorine Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/044,341 US7829243B2 (en) | 2005-01-27 | 2005-01-27 | Method for plasma etching a chromium layer suitable for photomask fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006215552A JP2006215552A (ja) | 2006-08-17 |
| JP2006215552A5 true JP2006215552A5 (enExample) | 2012-01-12 |
Family
ID=36353349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006016905A Pending JP2006215552A (ja) | 2005-01-27 | 2006-01-25 | フォトマスク製作に適したクロム層をプラズマエッチングするための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7829243B2 (enExample) |
| EP (1) | EP1686421B1 (enExample) |
| JP (1) | JP2006215552A (enExample) |
| KR (1) | KR101196617B1 (enExample) |
| TW (1) | TWI367400B (enExample) |
Families Citing this family (181)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
| US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
| US7790334B2 (en) * | 2005-01-27 | 2010-09-07 | Applied Materials, Inc. | Method for photomask plasma etching using a protected mask |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
| JP4812512B2 (ja) * | 2006-05-19 | 2011-11-09 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置の製造方法 |
| US20080032212A1 (en) * | 2006-08-03 | 2008-02-07 | Kang Jae H | High Definition Mask and Manufacturing Method of the Same |
| KR101346897B1 (ko) * | 2006-08-07 | 2014-01-02 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 플라즈마 처리 시스템 |
| US7635546B2 (en) * | 2006-09-15 | 2009-12-22 | Applied Materials, Inc. | Phase shifting photomask and a method of fabricating thereof |
| US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| KR100944846B1 (ko) * | 2006-10-30 | 2010-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 마스크 에칭 프로세스 |
| US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| US7786019B2 (en) * | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
| US20080261120A1 (en) * | 2007-04-20 | 2008-10-23 | Jeffrey Peter Gambino | Photolithography mask with integrally formed protective capping layer |
| KR100924342B1 (ko) * | 2007-10-15 | 2009-10-30 | 주식회사 하이닉스반도체 | 포토마스크의 결함 수정 방법 |
| JP5326404B2 (ja) * | 2008-07-29 | 2013-10-30 | 富士通株式会社 | モールドの製造方法 |
| US7637269B1 (en) * | 2009-07-29 | 2009-12-29 | Tokyo Electron Limited | Low damage method for ashing a substrate using CO2/CO-based process |
| US9238870B2 (en) * | 2009-10-12 | 2016-01-19 | Texas Instruments Incorporated | Plasma etch for chromium alloys |
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-
2005
- 2005-01-27 US US11/044,341 patent/US7829243B2/en not_active Expired - Fee Related
-
2006
- 2006-01-23 TW TW095102512A patent/TWI367400B/zh not_active IP Right Cessation
- 2006-01-25 KR KR1020060007615A patent/KR101196617B1/ko not_active Expired - Fee Related
- 2006-01-25 JP JP2006016905A patent/JP2006215552A/ja active Pending
- 2006-01-26 EP EP06250436A patent/EP1686421B1/en not_active Not-in-force
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