JP2006201778A5 - - Google Patents

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Publication number
JP2006201778A5
JP2006201778A5 JP2006009643A JP2006009643A JP2006201778A5 JP 2006201778 A5 JP2006201778 A5 JP 2006201778A5 JP 2006009643 A JP2006009643 A JP 2006009643A JP 2006009643 A JP2006009643 A JP 2006009643A JP 2006201778 A5 JP2006201778 A5 JP 2006201778A5
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JP
Japan
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JP2006009643A
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JP2006201778A (ja
JP5047502B2 (ja
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Publication of JP2006201778A5 publication Critical patent/JP2006201778A5/ja
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JP2006009643A 2005-01-19 2006-01-18 樹脂混合物を含むフォトレジスト組成物 Active JP5047502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64547105P 2005-01-19 2005-01-19
US60/645471 2005-01-19

Publications (3)

Publication Number Publication Date
JP2006201778A JP2006201778A (ja) 2006-08-03
JP2006201778A5 true JP2006201778A5 (ja) 2011-08-04
JP5047502B2 JP5047502B2 (ja) 2012-10-10

Family

ID=36295418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006009643A Active JP5047502B2 (ja) 2005-01-19 2006-01-18 樹脂混合物を含むフォトレジスト組成物

Country Status (6)

Country Link
US (1) US7592125B2 (ja)
EP (1) EP1684120A1 (ja)
JP (1) JP5047502B2 (ja)
KR (2) KR101403897B1 (ja)
CN (1) CN1821878B (ja)
TW (1) TWI328144B (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8241829B2 (en) * 2004-03-08 2012-08-14 Mitsubishi Rayon Co., Ltd. Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
JP4697443B2 (ja) * 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4920271B2 (ja) * 2006-03-06 2012-04-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4900603B2 (ja) * 2006-10-24 2012-03-21 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5037920B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ヒドロキシビニルナフタレン化合物の製造方法
JP4798027B2 (ja) * 2007-01-18 2011-10-19 Ｊｓｒ株式会社 イオンインプランテーション用感放射線性樹脂組成物、及びイオンインプランテーション用パターン形成方法
KR101431297B1 (ko) * 2007-03-28 2014-08-20 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물 및 그것을 이용한 레지스트 패턴 형성 방법
US8110339B2 (en) * 2007-09-06 2012-02-07 Massachusetts Institute Of Technology Multi-tone resist compositions
JP5013119B2 (ja) * 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
KR100933984B1 (ko) * 2007-11-26 2009-12-28 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물
KR100933983B1 (ko) * 2007-11-26 2009-12-28 제일모직주식회사 우수한 식각 내성 특성을 갖는 레지스트 조성물
JP5303142B2 (ja) * 2007-11-30 2013-10-02 東京応化工業株式会社 含フッ素化合物、含フッ素高分子化合物、液浸露光用レジスト組成物およびレジストパターン形成方法
JP5228995B2 (ja) * 2008-03-05 2013-07-03 信越化学工業株式会社 重合性モノマー化合物、パターン形成方法並びにこれに用いるレジスト材料
KR20110022602A (ko) * 2008-07-15 2011-03-07 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물 및 레지스트 패턴 형성 방법
KR20100036827A (ko) * 2008-09-30 2010-04-08 금호석유화학 주식회사 레지스트용 중합체 및 이를 이용하여 제조된 레지스트 조성물
EP2189847A3 (en) * 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2189846B1 (en) * 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
JP5393128B2 (ja) * 2008-12-16 2014-01-22 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
EP2216684B1 (en) 2009-02-08 2015-10-07 Rohm and Haas Electronic Materials LLC Method of forming a photoresist image comprising an undercoat layer
US8017303B2 (en) * 2009-02-23 2011-09-13 International Business Machines Corporation Ultra low post exposure bake photoresist materials
TWI468865B (zh) * 2009-12-15 2015-01-11 羅門哈斯電子材料有限公司 光阻劑及其使用方法
JP2012103679A (ja) * 2010-09-10 2012-05-31 Rohm & Haas Electronic Materials Llc フォトレジスト組成物およびフォトリソグラフィパターンを形成する方法
EP2472327A1 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
TWI632437B (zh) * 2014-11-07 2018-08-11 羅門哈斯電子材料有限公司 用於形成凸紋影像的方法
US9758610B2 (en) * 2015-12-18 2017-09-12 Dow Global Technologies Llc Acid-labile hyperbranched copolymer and associated photoresist composition and method of forming an electronic device
CN106982598A (zh) * 2017-05-14 2017-07-28 海南大学 沼气能玉米脱粒收集一体机

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
TW528932B (en) * 1997-01-24 2003-04-21 Shinetsu Chemical Co Polymers and chemically amplified positive resist compositions
TW574629B (en) * 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
KR19990036901A (ko) * 1997-10-08 1999-05-25 카나가와 치히로 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
KR100489576B1 (ko) * 1997-10-08 2005-12-21 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP3796559B2 (ja) * 1997-10-08 2006-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
JPH11236416A (ja) * 1997-10-08 1999-08-31 Shin Etsu Chem Co Ltd ポリスチレン系高分子化合物及び化学増幅ポジ型レジスト材料並びにパターン形成方法
KR100557368B1 (ko) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JPH11265067A (ja) * 1998-01-16 1999-09-28 Jsr Corp 感放射線性樹脂組成物
JP3755571B2 (ja) * 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
EP1126321A1 (en) * 2000-02-10 2001-08-22 Shipley Company LLC Positive photoresists containing crosslinked polymers
ATE486301T1 (de) * 2000-08-21 2010-11-15 Tokyo Ohka Kogyo Co Ltd Vernetzte, positiv arbeitende photoresist- zusammensetzung
JP4498690B2 (ja) * 2002-05-30 2010-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 新規樹脂およびそれを含有するフォトレジスト組成物

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