JP2006190749A - 半導体素子および電界効果トランジスタ - Google Patents
半導体素子および電界効果トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 230000005669 field effect Effects 0.000 title claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 25
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 57
- -1 nitride compound Chemical class 0.000 claims description 46
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 38
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 30
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 29
- 239000010955 niobium Substances 0.000 claims description 26
- 229910052726 zirconium Inorganic materials 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 22
- 239000010937 tungsten Substances 0.000 claims description 22
- 229910052735 hafnium Inorganic materials 0.000 claims description 21
- 229910052758 niobium Inorganic materials 0.000 claims description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 20
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 20
- 239000011780 sodium chloride Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 239000011734 sodium Substances 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 48
- 229910002601 GaN Inorganic materials 0.000 description 46
- 150000001875 compounds Chemical class 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001420 photoelectron spectroscopy Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】 n型GaN層3の上に形成されたショットキー電極6は、WNx層4を有し、n型GaN層3とWNx層4とが接触する面において、n型GaN層3の結晶面は六方晶の(0001)面であり、WNx層4の結晶面は(111)面に配向している。WNx層4は、Zr、Ha、Nb、Ta、MoおよびWよりなる群から選ばれる少なくとも1種の元素と、窒素および炭素の少なくとも一方の元素とからなる塩化ナトリウム型構造の電極層であればよい。また、電極層の格子定数は、n型GaN層3におけるa軸格子定数を2(1/2)倍した値の0.95倍〜1.05倍であることが好ましい。
【選択図】 図1
Description
図1(a)は、本実施の形態における電極を備えた半導体素子の断面図である。また、図1(b)は図1(a)の平面図である。
本実施の形態の半導体素子は、実施の形態1におけるWNx層がTaNx層に置き換わった構造の電極を有する。
2,22 i型GaN層
3,23 n型GaN層
4 WNx層
5,25 Au層
6,26 ショットキー電極
7,27 Ti層
8,28 Al層
9,29 オーミック電極
24 TaNx層
Claims (10)
- n型窒化物系化合物半導体と、
前記n型窒化物系化合物半導体の上に形成されたショットキー電極とを備えた半導体素子であって、
前記ショットキー電極は、前記n型窒化物系化合物半導体の上に形成されて、ジルコニウム、ハフニウム、ニオブ、タンタル、モリブデンおよびタングステンよりなる群から選ばれる少なくとも1種の元素と、窒素および炭素の少なくとも一方の元素とからなる塩化ナトリウム型構造の電極層を有し、
前記n型窒化物系化合物半導体と前記電極層とが接触する面において、前記n型窒化物系化合物半導体の結晶面が六方晶の(0001)面であり、前記電極層の結晶面が(111)面に配向していることを特徴とする半導体素子。 - 前記電極層は窒化タングステン層であり、
タングステン原子数に対する窒素原子数の比が0.04〜0.5である請求項1に記載の半導体素子。 - 前記電極層は窒化タンタル層であり、
タンタル原子数に対する窒素原子数の比が0.5〜1.2である請求項1に記載の半導体素子。 - 前記電極層の格子定数が、前記n型窒化物系化合物半導体におけるa軸格子定数を2(1/2)倍した値の0.95倍〜1.05倍である請求項1に記載の半導体素子。
- 前記ショトキー電極は、前記電極層の上に、金、銅およびアルミニウムよりなる群から選ばれる少なくとも1種の元素を主成分とし、抵抗率が5×10−8Ωm以下である他の電極層を有する請求項1〜4に記載の半導体素子。
- 請求項1〜5に記載のショットキー電極をゲート電極とし、
窒化物系化合物半導体を活性層に用いたことを特徴とする電界効果トランジスタ。 - p型窒化物系化合物半導体と、
前記p型窒化物系化合物半導体の上に形成されたオーミック電極とを備えた半導体素子であって、
前記オーミック電極は、前記p型窒化物系化合物半導体の上に形成されて、ジルコニウム、ハフニウム、ニオブ、タンタル、モリブデンおよびタングステンよりなる群から選ばれる少なくとも1種の元素の炭化物からなる塩化ナトリウム型構造の電極層を有することを特徴とする半導体素子。 - p型窒化物系化合物半導体と、
前記p型窒化物系化合物半導体の上に形成されたオーミック電極とを備えた半導体素子であって、
前記オーミック電極は、前記p型窒化物系化合物半導体の上に形成されて、ジルコニウム、ハフニウム、ニオブ、タンタル、モリブデンおよびタングステンよりなる群から選ばれる少なくとも1種の元素の窒化物からなる塩化ナトリウム型構造の電極層を有し、
前記p型窒化物系化合物半導体と前記電極層とが接触する面において、前記p型窒化物系化合物半導体の結晶面が六方晶の(0001)面であり、前記電極層の結晶面が(111)面に配向していることを特徴とする半導体素子。 - 炭化ケイ素半導体と、
前記炭化ケイ素半導体の上に形成された電極とを備えた半導体素子であって、
前記電極は、前記炭化ケイ素半導体の上に形成されて、ジルコニウム、ハフニウム、ニオブ、タンタル、モリブデンおよびタングステンよりなる群から選ばれる少なくとも1種の元素の炭化物からなる塩化ナトリウム型構造の電極層を有することを特徴とする半導体素子。 - 炭化ケイ素半導体と、
前記炭化ケイ素半導体の上に形成された電極とを備えた半導体素子であって、
前記電極は、前記炭化ケイ素半導体の上に形成されて、ジルコニウム、ハフニウム、ニオブ、タンタル、モリブデンおよびタングステンよりなる群から選ばれる少なくとも1種の元素の窒化物からなる塩化ナトリウム型構造の電極層を有し、
前記炭化ケイ素半導体と前記電極層とが接触する面において、前記炭化ケイ素半導体の結晶面が六方晶の(0001)面であり、前記電極層の結晶面が(111)面に配向していることを特徴とする半導体素子。
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JP2005000481A JP4841844B2 (ja) | 2005-01-05 | 2005-01-05 | 半導体素子 |
US11/290,603 US7598548B2 (en) | 2005-01-05 | 2005-12-01 | Semiconductor device and field-effect transistor |
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JP2005000481A JP4841844B2 (ja) | 2005-01-05 | 2005-01-05 | 半導体素子 |
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Cited By (9)
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WO2007119471A1 (ja) * | 2006-03-24 | 2007-10-25 | Toyota Jidosha Kabushiki Kaisha | 動力伝達装置およびその組立方法 |
JP2008258315A (ja) * | 2007-04-03 | 2008-10-23 | Mitsubishi Electric Corp | トランジスタ |
JP2009130047A (ja) * | 2007-11-21 | 2009-06-11 | Sharp Corp | 窒化物半導体用電極および窒化物半導体装置 |
JP2011181753A (ja) * | 2010-03-02 | 2011-09-15 | Advanced Power Device Research Association | 半導体トランジスタの製造方法 |
US8633101B2 (en) | 2009-10-01 | 2014-01-21 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method of semiconductor device |
KR101450263B1 (ko) | 2013-07-15 | 2014-10-22 | 전북대학교산학협력단 | 쇼트키 다이오드 및 그 제조방법 |
JP2016115942A (ja) * | 2014-12-17 | 2016-06-23 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | 半導体デバイス、および半導体デバイスを製作する方法 |
JPWO2014167876A1 (ja) * | 2013-04-12 | 2017-02-16 | シャープ株式会社 | 窒化物半導体装置 |
WO2023008308A1 (ja) | 2021-07-27 | 2023-02-02 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
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JP4557879B2 (ja) * | 2005-12-09 | 2010-10-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5183913B2 (ja) * | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
DE102009028241A1 (de) * | 2009-08-05 | 2011-02-10 | Robert Bosch Gmbh | Halbleiteranordnung |
US9236441B2 (en) * | 2012-11-22 | 2016-01-12 | Seoul National University R&Db Foundation | Nitride-based semiconductor device and method for manufacturing the same |
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KR101450263B1 (ko) | 2013-07-15 | 2014-10-22 | 전북대학교산학협력단 | 쇼트키 다이오드 및 그 제조방법 |
JP2016115942A (ja) * | 2014-12-17 | 2016-06-23 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | 半導体デバイス、および半導体デバイスを製作する方法 |
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WO2023008308A1 (ja) | 2021-07-27 | 2023-02-02 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
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US7598548B2 (en) | 2009-10-06 |
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