JP2006165128A5 - - Google Patents

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Publication number
JP2006165128A5
JP2006165128A5 JP2004351904A JP2004351904A JP2006165128A5 JP 2006165128 A5 JP2006165128 A5 JP 2006165128A5 JP 2004351904 A JP2004351904 A JP 2004351904A JP 2004351904 A JP2004351904 A JP 2004351904A JP 2006165128 A5 JP2006165128 A5 JP 2006165128A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2004351904A
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JP4589092B2 (ja
JP2006165128A (ja
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Priority to JP2004351904A priority Critical patent/JP4589092B2/ja
Priority claimed from JP2004351904A external-priority patent/JP4589092B2/ja
Priority to US11/093,146 priority patent/US7892916B2/en
Priority to KR1020050027168A priority patent/KR100754442B1/ko
Publication of JP2006165128A publication Critical patent/JP2006165128A/ja
Publication of JP2006165128A5 publication Critical patent/JP2006165128A5/ja
Application granted granted Critical
Publication of JP4589092B2 publication Critical patent/JP4589092B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2004351904A 2004-12-03 2004-12-03 半導体装置の製造方法 Expired - Fee Related JP4589092B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004351904A JP4589092B2 (ja) 2004-12-03 2004-12-03 半導体装置の製造方法
US11/093,146 US7892916B2 (en) 2004-12-03 2005-03-30 Semiconductor device and fabricating method thereof
KR1020050027168A KR100754442B1 (ko) 2004-12-03 2005-03-31 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004351904A JP4589092B2 (ja) 2004-12-03 2004-12-03 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006165128A JP2006165128A (ja) 2006-06-22
JP2006165128A5 true JP2006165128A5 (ja) 2007-06-14
JP4589092B2 JP4589092B2 (ja) 2010-12-01

Family

ID=36573205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004351904A Expired - Fee Related JP4589092B2 (ja) 2004-12-03 2004-12-03 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US7892916B2 (ja)
JP (1) JP4589092B2 (ja)
KR (1) KR100754442B1 (ja)

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US7485528B2 (en) * 2006-07-14 2009-02-03 Micron Technology, Inc. Method of forming memory devices by performing halogen ion implantation and diffusion processes
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KR20080062022A (ko) * 2006-12-29 2008-07-03 동부일렉트로닉스 주식회사 플래쉬 기억 소자의 형성 방법
US20080174936A1 (en) * 2007-01-19 2008-07-24 Western Lights Semiconductor Corp. Apparatus and Method to Store Electrical Energy
CN101617399B (zh) * 2007-02-27 2011-05-18 富士通半导体股份有限公司 半导体存储器件及其制造、测试方法、封装树脂形成方法
JP2011044488A (ja) * 2009-08-19 2011-03-03 Elpida Memory Inc 半導体装置およびその製造方法

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JP4657545B2 (ja) * 2001-12-28 2011-03-23 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100449250B1 (ko) 2002-01-07 2004-09-18 주식회사 하이닉스반도체 반도체 소자의 비트 라인 형성 방법
US6660536B2 (en) * 2002-02-21 2003-12-09 Symetrix Corporation Method of making ferroelectric material utilizing anneal in an electrical field
JP2003258202A (ja) * 2002-02-28 2003-09-12 Nec Electronics Corp 半導体装置の製造方法
KR100471163B1 (ko) * 2002-03-14 2005-03-09 삼성전자주식회사 커패시터들을 갖는 반도체소자의 제조방법
JP4331442B2 (ja) * 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
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