JP2006128288A5 - - Google Patents

Download PDF

Info

Publication number
JP2006128288A5
JP2006128288A5 JP2004312497A JP2004312497A JP2006128288A5 JP 2006128288 A5 JP2006128288 A5 JP 2006128288A5 JP 2004312497 A JP2004312497 A JP 2004312497A JP 2004312497 A JP2004312497 A JP 2004312497A JP 2006128288 A5 JP2006128288 A5 JP 2006128288A5
Authority
JP
Japan
Prior art keywords
film forming
film
gas
substrate
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004312497A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006128288A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004312497A priority Critical patent/JP2006128288A/ja
Priority claimed from JP2004312497A external-priority patent/JP2006128288A/ja
Priority to KR1020077009588A priority patent/KR100889401B1/ko
Priority to CNB2005800371462A priority patent/CN100477119C/zh
Priority to US11/718,100 priority patent/US7846839B2/en
Priority to KR1020087027067A priority patent/KR100922905B1/ko
Priority to PCT/JP2005/018287 priority patent/WO2006046386A1/ja
Publication of JP2006128288A publication Critical patent/JP2006128288A/ja
Publication of JP2006128288A5 publication Critical patent/JP2006128288A5/ja
Pending legal-status Critical Current

Links

JP2004312497A 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 Pending JP2006128288A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
KR1020077009588A KR100889401B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체
CNB2005800371462A CN100477119C (zh) 2004-10-27 2005-10-03 成膜方法、半导体装置的制造方法、半导体装置和成膜装置
US11/718,100 US7846839B2 (en) 2004-10-27 2005-10-03 Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
KR1020087027067A KR100922905B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치, 프로그램 및 기록매체
PCT/JP2005/018287 WO2006046386A1 (ja) 2004-10-27 2005-10-03 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Publications (2)

Publication Number Publication Date
JP2006128288A JP2006128288A (ja) 2006-05-18
JP2006128288A5 true JP2006128288A5 (enExample) 2007-11-22

Family

ID=36227632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004312497A Pending JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Country Status (5)

Country Link
US (1) US7846839B2 (enExample)
JP (1) JP2006128288A (enExample)
KR (2) KR100922905B1 (enExample)
CN (1) CN100477119C (enExample)
WO (1) WO2006046386A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008013848A (ja) * 2006-06-08 2008-01-24 Tokyo Electron Ltd 成膜装置及び成膜方法
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
KR102628795B1 (ko) 2018-07-30 2024-01-25 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6249055B1 (en) * 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
JP4155372B2 (ja) * 1999-03-08 2008-09-24 株式会社トリケミカル研究所 配線膜形成方法
US6362099B1 (en) 1999-03-09 2002-03-26 Applied Materials, Inc. Method for enhancing the adhesion of copper deposited by chemical vapor deposition
JP2003514115A (ja) * 1999-11-02 2003-04-15 ユニバーシティー オブ マサチューセッツ パターン基板およびパターンなし基板上に金属および金属合金被膜を形成するための化学流体被着
KR100358952B1 (ko) * 2000-04-06 2002-10-31 주식회사 에버테크 화학기상증착 장치 및 그 방법
JP4083968B2 (ja) * 2000-11-02 2008-04-30 株式会社東芝 半導体装置の製造方法
KR20020034956A (ko) * 2000-11-02 2002-05-09 마에다 시게루 배선형성방법 및 반도체장치
JP3933442B2 (ja) * 2000-11-02 2007-06-20 株式会社荏原製作所 配線形成方法及び半導体装置
KR100420598B1 (ko) * 2001-11-28 2004-03-02 동부전자 주식회사 알루미늄을 이용한 구리 확산 방지 막 형성방법
KR100805843B1 (ko) * 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
JP4007822B2 (ja) * 2002-02-14 2007-11-14 富士通株式会社 配線構造の形成方法
US6911229B2 (en) * 2002-08-09 2005-06-28 International Business Machines Corporation Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof
JP2004193499A (ja) 2002-12-13 2004-07-08 Applied Materials Inc 半導体装置、その製造方法、及びその製造装置
CN1426092A (zh) * 2003-01-02 2003-06-25 上海华虹（集团）有限公司 化学气相法淀积氮化钛和铜金属层大马士革工艺
KR101098568B1 (ko) * 2003-01-23 2011-12-26 어드밴스드 마이크로 디바이시즈, 인코포레이티드 패터닝된 유전체 위에 촉매 함유 층을 형성하는 방법

Similar Documents

Publication Publication Date Title
TWI819806B (zh) 基材上選擇性沉積金屬薄膜之方法
US6713373B1 (en) Method for obtaining adhesion for device manufacture
US6464779B1 (en) Copper atomic layer chemical vapor desposition
TWI333234B (en) Integration of ald/cvd barriers with porous low k materials
JP3732048B2 (ja) 多層ＴｉＮ膜の形成方法
TW589405B (en) Plasma treatment for copper oxide reduction
TWI645511B (zh) 用於銅阻障層應用之摻雜的氮化鉭
JP2005513813A (ja) 基板上に半導体集積回路用銅配線を形成する方法
JP2008538126A5 (enExample)
KR20110059741A (ko) 배리어 표면들상의 코발트 증착
KR101078627B1 (ko) 배리어층 표면 패시베이션을 위한 방법 및 시스템
KR20130065647A (ko) 반도체 소자를 위한 표면 세척 및 금속-함유 캡층의 선택적 증착
WO2006028573A3 (en) Deposition of ruthenium and/or ruthenium oxide films
US20080132057A1 (en) Method of selectively forming a conductive barrier layer by ald
EP1186685A3 (en) Method for forming silicon carbide films
JP2006041453A5 (enExample)
US6664636B2 (en) Cu film deposition equipment of semiconductor device
JP2006128288A5 (enExample)
JP4804725B2 (ja) 半導体装置の導電性構造体の形成方法
JP2004179605A (ja) アルミニウム金属配線形成方法
JP2006120870A5 (enExample)
JP4662943B2 (ja) コンタクトの形成中、コンタクトホール幅の増大を防ぐ方法
US7014709B1 (en) Thin layer metal chemical vapor deposition
KR100922905B1 (ko) 성막 방법, 반도체 장치의 제조 방법, 반도체 장치, 프로그램 및 기록매체
KR100639458B1 (ko) ＴａＳＩＮ막을 사용한 확산 방지막 형성 방법 및 이를이용한 금속 배선 형성 방법