CN100477119C - 成膜方法、半导体装置的制造方法、半导体装置和成膜装置 - Google Patents

成膜方法、半导体装置的制造方法、半导体装置和成膜装置 Download PDF

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Publication number
CN100477119C
CN100477119C CNB2005800371462A CN200580037146A CN100477119C CN 100477119 C CN100477119 C CN 100477119C CN B2005800371462 A CNB2005800371462 A CN B2005800371462A CN 200580037146 A CN200580037146 A CN 200580037146A CN 100477119 C CN100477119 C CN 100477119C
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film
film forming
gas
processed substrate
reducing gas
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Expired - Fee Related
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Chinese (zh)
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CN101065836A (zh
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小岛康彦
吉井直树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005800371462A 2004-10-27 2005-10-03 成膜方法、半导体装置的制造方法、半导体装置和成膜装置 Expired - Fee Related CN100477119C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP312497/2004 2004-10-27
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
PCT/JP2005/018287 WO2006046386A1 (ja) 2004-10-27 2005-10-03 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Publications (2)

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CN101065836A CN101065836A (zh) 2007-10-31
CN100477119C true CN100477119C (zh) 2009-04-08

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US (1) US7846839B2 (enExample)
JP (1) JP2006128288A (enExample)
KR (2) KR100889401B1 (enExample)
CN (1) CN100477119C (enExample)
WO (1) WO2006046386A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008013848A (ja) * 2006-06-08 2008-01-24 Tokyo Electron Ltd 成膜装置及び成膜方法
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
KR102628795B1 (ko) * 2018-07-30 2024-01-25 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260865A (ja) * 1999-03-08 2000-09-22 Tori Chemical Kenkyusho:Kk 配線膜形成方法及び配線膜構造
US20020090814A1 (en) * 2000-11-02 2002-07-11 Hiroaki Inoue Method for forming interconnects and semiconductor device
US20020119657A1 (en) * 1999-03-09 2002-08-29 Srinivas Gandikota Method for enhancing the adhesion of copper deposited by chemical vapor deposition
CN1426092A (zh) * 2003-01-02 2003-06-25 上海华虹（集团）有限公司 化学气相法淀积氮化钛和铜金属层大马士革工艺
CN1430246A (zh) * 2001-11-28 2003-07-16 东部电子株式会社 利用铝的防止铜扩散膜的形成方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6249055B1 (en) * 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
EP2017369A1 (en) * 1999-11-02 2009-01-21 University of Massachusetts Chemical fluid deposition for the formation of metal and metal alloy films on patterned and unpatterned substrates
KR100358952B1 (ko) * 2000-04-06 2002-10-31 주식회사 에버테크 화학기상증착 장치 및 그 방법
JP4083968B2 (ja) * 2000-11-02 2008-04-30 株式会社東芝 半導体装置の製造方法
JP3933442B2 (ja) * 2000-11-02 2007-06-20 株式会社荏原製作所 配線形成方法及び半導体装置
KR100805843B1 (ko) * 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
JP4007822B2 (ja) * 2002-02-14 2007-11-14 富士通株式会社 配線構造の形成方法
US6911229B2 (en) * 2002-08-09 2005-06-28 International Business Machines Corporation Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof
JP2004193499A (ja) 2002-12-13 2004-07-08 Applied Materials Inc 半導体装置、その製造方法、及びその製造装置
JP5214092B2 (ja) * 2003-01-23 2013-06-19 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 触媒を用いた無電解めっきによりパターン化された絶縁体上に金属層を形成する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260865A (ja) * 1999-03-08 2000-09-22 Tori Chemical Kenkyusho:Kk 配線膜形成方法及び配線膜構造
US20020119657A1 (en) * 1999-03-09 2002-08-29 Srinivas Gandikota Method for enhancing the adhesion of copper deposited by chemical vapor deposition
US20020090814A1 (en) * 2000-11-02 2002-07-11 Hiroaki Inoue Method for forming interconnects and semiconductor device
CN1430246A (zh) * 2001-11-28 2003-07-16 东部电子株式会社 利用铝的防止铜扩散膜的形成方法
CN1426092A (zh) * 2003-01-02 2003-06-25 上海华虹（集团）有限公司 化学气相法淀积氮化钛和铜金属层大马士革工艺

Also Published As

Publication number Publication date
CN101065836A (zh) 2007-10-31
KR100889401B1 (ko) 2009-03-20
WO2006046386A1 (ja) 2006-05-04
JP2006128288A (ja) 2006-05-18
KR20070058667A (ko) 2007-06-08
US7846839B2 (en) 2010-12-07
KR20080106373A (ko) 2008-12-04
KR100922905B1 (ko) 2009-10-22
US20090032950A1 (en) 2009-02-05

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