JP2005538572A - ウエハ被覆およびダイ分離するための切断方法 - Google Patents
ウエハ被覆およびダイ分離するための切断方法 Download PDFInfo
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Abstract
Description
に対して低コストでアンダーフィル材を適用する処理工程が依然として必要とされる。
、前記ウエハは最終的には各個のフリップチップ12の端部または側面39を画定し得る溝38を伴ってその原型を保持し、分離していない状態である。図4を参照すると、アンダーフィル材40は工程24においてウエハ上にある各ICの活性表面36に適用される。前記アンダーフィル材は、被覆および半導体製造工程に共通である実に多くの方法によって適用され得る。例えば、アンダーフィル材溶液をウエハに被覆する方法として、浸漬、噴射、フラッドコート、スピンコート、またはカーテンコート等がある得る。或いは前記アンダーフィル材はステンシル、または印刷によって選択的に適用され得る。アンダーフィル材溶液の適用後、前記アンダーフィル材を少なくとも半固体状態にさせるように、例えば残留溶媒を除去するために加熱したり、前記アンダーフィル材が高固体材料である場合には、該材料を液体から固体へ変化させるために部分的に硬化させることによって、処理されなければならないことは明らかである。これまでに分かっている有用とされるアンダーフィル材には、エポキシ樹脂、ポリイミド樹脂、およびシリコンポリイミドコポリマー樹脂がある。前記アンダーフィル材が、溶液を浸漬、噴射、フラッドコート、スピンコート、またはカーテンコートすることによって、ウエハ表面上に大量に塗布されると、少なくとも部分的にはウエハ表面上に切断された溝を充填するであろう(42)。被膜42は、各ICの端部も同様に被覆する機能を有する。
Material with Fluxing Properties)」と題される米国特許番号第5128746号において説明されている。図5に示す別の実施形態において、前記アンダーフィル材がステンシル、印刷、または積層によって選択的に適用される場合、たとえアンダーフィル材が溝にあったとしても僅かであり、従って前記ICの端部39にもアンダーフィル材は残らない。
ル材が溝に堆積している場合、溝に残っているアンダーフィル材92を切断することによってダイ分離のための切断工程28が実行される。これはICの活性面または裏面から実行することができ、通常はレーザー(エキシマ、紫外線、二酸化炭素、またはその他のタイプ)を使用することによって、または機械的に切断またはソーイングすることによって達成される。ここで図11を参照すると、前記溝にあるアンダーフィル材92が切断された後に、個々のICチップ12は自由になり、各チップはダイシング工程22の間に画定された端部にアンダーフィル材112を有する。これは、二回目の切断のは通常、最初のダイシングによる切断よりも狭いためである。上記の両実施形態において、工程24において活性表面に堆積したアンダーフィル材40は、ウエハからダイ分離のための切断後もフリップチップIC112の活性表面に残る。
Claims (27)
- 集積回路チップにアンダーフィル材を提供し、前記チップをウエハからダイ分離するために切断する方法であって、以下に続く工程順によって、
a.前面および裏面を有するウエハを提供する工程と、前記ウエハは少なくとも一つの集積回路チップを含み、前記集積回路チップは前記ウエハの前面に複数のはんだバンプを有することと、
b.前記少なくとも一つの集積回路チップに端部を画定する溝を形成するために、前記ウエハの前面を切断する工程と、前記切断はウエハを完全に切断しない深さまでであることと、
c.前記ウエハの前面をアンダーフィル材で被覆する工程と、
d.前記ウエハの裏面を粗研磨して、前記溝が前面から裏面に及ぶまで十分に前記ウエハの厚さを減少させる工程とを備え、
e.前記前面上に被覆したアンダーフィル材は集積回路チップに付着した状態のまま残る方法。 - 工程(c)の後、前記複数のはんだバンプにフラックス剤による被覆を提供する工程を更に備える、請求項1記載の方法。
- 前記フラックス剤による被覆を提供する工程は、工程(c)の直後、および工程(d)の直前に行なわれる、請求項2記載の方法。
- 前記アンダーフィル材は、被覆する工程において、前記溝の内部、および前記集積回路チップの端部に堆積される、請求項1記載の方法。
- 前記粗研磨する工程は、前記ウエハの裏面を研削する、研磨する、または粗研磨する工程を備える、請求項1記載の方法。
- 前記被覆する工程は、液体材料を浸漬する、噴射する、または印刷する、または薄膜を積層する工程を備える、請求項1記載の方法。
- 前記集積回路はフリップチップ集積回路である、請求項1記載の方法。
- 前記アンダーフィル材は、エポキシ、ポリイミド、およびシリコンポリイミドコポリマーのうちから選択される、請求項1記載の方法。
- 前記被覆する工程(c)は、前記はんだバンプの各々を被覆する工程を更に備える、請求項1記載の方法。
- 前記被覆する工程(c)は、前記はんだバンプの各々の一部分を被覆せずに残す工程を備える、請求項1記載の方法。
- 集積回路チップにアンダーフィル材を提供するための方法であって、以下に続く工程順よって、
a.前面および裏面を有するウエハを提供する工程と、前記ウエハは少なくとも一つの集積回路チップを含み、前記集積回路チップは前記ウエハの前面に複数のはんだバンプを有することと、
b.前記少なくとも一つの集積回路チップに端部を画定する溝を形成するために、前記ウエハの前面を切断する工程と、前記切断はウエハを完全に切断しない深さまでであることと、
c.前記はんだバンプの各々の一部分を被覆せずに残すように、前記ウエハの前面をアンダーフィル材で被覆する工程と、
d.前記ウエハの裏面から材料を取り除いて、前記溝が前面から裏面に及ぶまで十分に前記ウエハの厚さを減少させる工程と、
e.前記ウエハから集積回路チップをダイ分離するために切断するのに十分であるように、溝にあるアンダーフィル材を切断することによってダイ分離する工程とを備える方法であって、
f.前記前面に被覆されたアンダーフィル材は、ダイ分離のために切断された集積回路チップに付着された状態のままに残る方法。 - 工程(c)の後、前記はんだバンプの被覆されていない部分にフラックス剤による被覆を提供する工程を更に備える、請求項11記載の方法。
- 前記フラックス剤による被覆を提供する工程は、前記アンダーフィル材にフラックス剤による被覆を提供する工程を更に備える、請求項12記載の方法。
- 前記フラックス剤による被覆を提供する工程は、工程(c)の直後、および工程(d)の直前に行なわれる、請求項12記載の方法。
- 前記アンダーフィル材は、被覆する工程において前記溝の内部、および前記集積回路チップの端部に堆積される、請求項11記載の方法。
- アンダーフィル材は、ダイ分離のための切断工程の後に前記集積回路チップの端部に被覆されたままに残る、請求項15記載の方法。
- 前記ダイ分離のための切断工程は、レーザー、スライシング、またはソーイングによってアンダーフィル材を切断する工程を備える、請求項11記載の方法。
- 前記ウエハの裏面から材料を取り除く工程は、ウエハの裏面を研削する、研磨する、または粗研磨する工程を備える、請求項11記載の方法。
- 前記被覆する工程は、液体材料を浸漬する、噴射する、または印刷する、または薄膜を積層する工程を備える、請求項11記載の方法。
- 前記集積回路はフリップチップ集積回路である、請求項11記載の方法。
- 前記アンダーフィル材は、エポキシ、ポリイミド、およびシリコンポリイミドコポリマーから構成される群から選択される、請求項11記載の方法。
- 前記切断工程はソーイング工程を備える、請求項11記載の方法。
- 導電性パッド上にはんだボールを備える活性表面を有する集積回路にアンダーフィル接着剤層を提供するためのウエハレベルの方法であって、
一つ以上の前記集積回路を含むシリコンウエハを提供する工程と、
前記集積回路の端部を画定する溝を形成するために、前記ウエハの活性表面を切断する工程と、前記切断はウエハを完全に切断しない深さまでであることと、
前記集積回路の活性表面上、および前記溝においてアンダーフィル接着剤層を形成する工程であって、ほとんどの前記はんだボールの内の少なくとも一部分は、アンダーフィル接着剤層に被覆されないままであることと、
前記アンダーフィル接着剤を部分的に硬化する工程と、
前記溝がウエハを完全に貫通するまで十分に前記ウエハの裏面からシリコンを除去する工程と、
前記溝に含まれるアンダーフィル接着剤を切断して、活性表面および端部にアンダーフィル材を有する集積回路を少なくとも一つダイ分離のために切断する工程とを備える方法。 - 前記はんだバンプの被覆されていない部分にフラックス剤による被覆を提供する工程を更に備える、請求項23記載の方法。
- 前記フラックス剤による被覆を提供する工程は、前記アンダーフィル材にフラックス剤による被覆を提供する工程を更に備える、請求項23記載の方法。
- 前記ウエハの裏面からシリコンを除去する工程は、前記ウエハの裏面を研削する、研磨する、または粗研磨する工程を備える、請求項23記載の方法。
- バンプを形成する集積回路の配列を有するウエハにアンダーフィル接着剤層を提供するための方法であって、各回路は導電性パッドにはんだボールを含む活性表面を有しており、
前記ウエハをダイシングして、ウエハの厚さよりも少ない所定の深さを有する溝を形成する工程と、
前記活性表面を被覆し、アンダーフィル材で溝を充填するように、前記ウエハをアンダーフィル材で被覆する工程と、
前記ダイシングされた溝が完全にウエハを貫通するまで、前記ウエハの活性表面の反対面を研磨する工程と、
前記溝にあるアンダーフィル材を通して切断し、前記バンプを形成する集積回路の配列をダイ分離するために切断する工程とを備える方法。
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Also Published As
Publication number | Publication date |
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CN100416768C (zh) | 2008-09-03 |
AU2003296904A1 (en) | 2004-05-04 |
AU2003296904A8 (en) | 2004-05-04 |
WO2004034422A3 (en) | 2004-08-26 |
KR20050054933A (ko) | 2005-06-10 |
CN1682363A (zh) | 2005-10-12 |
KR101054238B1 (ko) | 2011-08-08 |
WO2004034422A2 (en) | 2004-04-22 |
US6649445B1 (en) | 2003-11-18 |
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