JP2005537652A - 漏れ電流を減少させ、単位面積あたりのキャパシタンスを改善した、電界効果トランジスタおよび受動コンデンサを有する半導体装置 - Google Patents
漏れ電流を減少させ、単位面積あたりのキャパシタンスを改善した、電界効果トランジスタおよび受動コンデンサを有する半導体装置 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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Abstract
Description
本発明は様々な変形および代替の形態をとりうるが、その特定の実施形態を例示のために図面に示し、本明細書において詳細に説明する。しかしながら、特定の実施形態についての本明細書中の説明は、開示された特定の形態に本発明を限定しようとするものではなく、むしろ反対に、添付の特許請求の範囲に規定される本発明の精神および範囲の範疇に入る、すべての変形物、均等物および代替物を含むことを意図している、ことを理解してもらいたい。
Claims (18)
- 互いに絶縁分離構造202によって分離された第1能動領域220および第2能動領域230と、
前記第1能動領域220内およびその上に形成されたコンデンサ240であって、前記第1能動領域220上に形成された絶縁体221Aを含み、前記絶縁体221Aは第1誘電率を持つ、コンデンサ240と、
前記第2能動領域230内およびその上に形成された電界効果トランジスタ250であって、前記第1誘電率よりも小さい第2誘電率を持つ材料から形成されるゲート絶縁層231を含む、電界効果トランジスタ250とを備える、半導体装置。 - 前記コンデンサ240の前記絶縁体221Aは、ジルコニウム酸化物、ジルコニウム珪酸塩、ハフニウム酸化物およびハフニウム珪酸塩のうちの少なくとも1つを含む、請求項1記載の半導体装置。
- 前記コンデンサ240の前記絶縁体221Aは一以上の副層を含む、請求項1記載の半導体装置。
- 前記第1能動領域220と前記コンデンサ240の前記絶縁体221Aとの間に配置されるバリア層をさらに含む、請求項1記載の半導体装置。
- 前記絶縁体221Aの表面部分を実質的に完全に被覆するバリア層をさらに含む、請求項1記載の半導体装置。
- 第1半導体領域220内およびその上に形成された第1容量性素子と、
第2半導体領域230内およびその上に形成された第2容量性素子とを備え、
前記第1容量性素子は、前記第1半導体領域220と第1導電層の間に配置され、第1の厚み222を持つ第1絶縁体221Aを含み、
前記第2容量性素子は、前記第2半導体領域230と第2導電層の間に配置され、第2の厚み232を持つ第2絶縁体231を含み、
前記第1容量性素子の単位面積あたりのキャパシタンスは前記第2容量性素子のそれに等しいか、またはそれよりも高く、前記第2の厚み232は前記第1の厚み222よりも薄い、半導体装置。 - 前記第1絶縁体221Aは、ジルコニウム酸化物、ジルコニウム珪酸塩、ハフニウム酸化物およびハフニウム珪酸塩のうちの少なくとも1つを含む、請求項6記載の半導体装置。
- 前記第1能動領域220と前記第1絶縁体221Aの間に配置されるバリア層をさらに含む、請求項6記載の半導体装置。
- 前記第1絶縁体221Aの表面部分を実質的に完全に被覆するバリア層をさらに含む、請求項6記載の半導体装置。
- 半導体装置を形成する方法であって、
分離構造202によって分離された第1半導体領域220と第2半導体領域230とが形成された基板201を提供するステップと、
前記第1半導体領域230に、第1誘電率を持ち、第1の厚さ222を持つ第1絶縁層221Aを形成するステップと、
前記第2半導体領域230に、第2誘電率を持ち、第2の厚さ232を持つ第2絶縁層231を形成するステップと、
前記第1および第2絶縁層上に形成された導電材料205の層をパターン化して、第1容量性素子および第2容量性素子を作るステップとを含み、前記第1誘電率は前記第2誘電率よりも高い、方法。 - 前記第2の厚み232は前記第1の厚み222よりも薄い、請求項10記載の方法。
- 前記第1絶縁層221Aを形成するステップは、前記第1誘電率を持つ材料をデポジションするステップと、少なくとも前記第1半導体領域220をマスキングするステップと、前記材料のマスクされていない部分を取り除くステップとを含む、請求項10記載の方法。
- 前記第1誘電率を持つ材料をデポジションするステップは、バリア層をデポジションするステップと、バルク材料をデポジションするステップとを含み、それによって前記バリア層と前記バルク材料の組み合わせは前記第1誘電率を示す、請求項12記載の方法。
- 前記第2絶縁層231を形成するステップの前に、前記第1絶縁層221Aの露出部分上にキャップ層を形成するステップをさらに含む、請求項10記載の方法。
- 電界効果トランジスタ素子250および受動コンデンサ240を含む半導体装置を製造する方法であって、
分離構造202を形成することによって、第1能動領域220および第2能動領域230を定義するステップと、
コンデンサ絶縁体として用いるために、前記第1能動領域220上に第1絶縁層221Aを形成するステップと、
前記電界効果トランジスタ250のゲート絶縁膜として用いられる、第2絶縁層231を前記第2能動領域230に形成するステップとを含み、
前記第1絶縁層221Aの誘電率は前記第2絶縁層231のそれよりも高い、方法。 - 前記第2絶縁層231の厚み232は前記第1絶縁層221Aの厚み222よりも薄い、請求項15記載の方法。
- 前記第1絶縁層221Aを形成するステップは、前記第1誘電率を持つ材料をデポジションするステップと、少なくとも前記第1半導体領域220をマスキングするステップと、前記材料のマスクされていない部分を取り除くステップとを含む、請求項15記載の方法。
- 前記第1誘電率を持つ材料をデポジションするステップは、バリア層をデポジションするステップと、バルク材料をデポジションするステップとを含み、それによって前記バリア層と前記バルク材料の組み合わせは前記第1誘電率を示す、請求項15記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE10240423A DE10240423B4 (de) | 2002-09-02 | 2002-09-02 | Halbleiterelement mit einem Feldeffekttransistor und einem passiven Kondensator mit reduziertem Leckstrom und einer verbesserten Kapazität pro Einheitsfläche und Verfahren zu dessen Herstellung |
DE10240423.2 | 2002-09-02 | ||
US10/403,481 US6821840B2 (en) | 2002-09-02 | 2003-03-31 | Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area |
US10/403,481 | 2003-03-31 | ||
PCT/US2003/027367 WO2004021440A1 (en) | 2002-09-02 | 2003-08-29 | Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area |
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JP2005537652A5 JP2005537652A5 (ja) | 2007-06-07 |
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CN (1) | CN1299362C (ja) |
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JP4669246B2 (ja) * | 2004-08-16 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4673589B2 (ja) * | 2004-08-16 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
TWI357147B (en) * | 2007-01-01 | 2012-01-21 | Sandisk Corp | Integrated circuits and methods with two types of |
KR20200042161A (ko) * | 2018-10-15 | 2020-04-23 | 엘지디스플레이 주식회사 | 디스플레이 패널 및 디스플레이 장치 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62118559A (ja) * | 1985-11-18 | 1987-05-29 | Nec Corp | 半導体装置 |
JPH0236559A (ja) * | 1988-07-26 | 1990-02-06 | Nec Corp | 半導体装置及びその製造方法 |
JPH02135770A (ja) * | 1988-11-16 | 1990-05-24 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH02214152A (ja) * | 1989-02-15 | 1990-08-27 | Olympus Optical Co Ltd | 半導体装置及びその製造方法 |
JPH0346267A (ja) * | 1989-07-13 | 1991-02-27 | Nippondenso Co Ltd | 半導体装置の製造方法 |
JPH05326841A (ja) * | 1992-05-25 | 1993-12-10 | Nec Corp | 半導体装置の製造方法 |
JPH118352A (ja) * | 1997-06-14 | 1999-01-12 | Toshiba Microelectron Corp | 半導体集積回路装置及びその製造方法 |
JP2000332127A (ja) * | 1999-05-18 | 2000-11-30 | Sony Corp | 半導体装置とその製造方法 |
JP2001111000A (ja) * | 1999-08-14 | 2001-04-20 | Samsung Electronics Co Ltd | 半導体素子及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582071A (ja) * | 1981-06-25 | 1983-01-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
JPH01222469A (ja) * | 1988-03-01 | 1989-09-05 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
JP3415712B2 (ja) * | 1995-09-19 | 2003-06-09 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6064102A (en) * | 1997-12-17 | 2000-05-16 | Advanced Micro Devices, Inc. | Semiconductor device having gate electrodes with different gate insulators and fabrication thereof |
US6093616A (en) * | 1998-05-11 | 2000-07-25 | Taiwan Semiconductor Manufacturing Company | Method of manufacture of stacked gate MOS structure for multiple voltage power supply applications |
US5960289A (en) * | 1998-06-22 | 1999-09-28 | Motorola, Inc. | Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region |
JP2000174132A (ja) * | 1998-12-08 | 2000-06-23 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
JP2000315733A (ja) * | 1999-04-28 | 2000-11-14 | Fujitsu Ltd | 多電源半導体装置の製造方法 |
JP2003500831A (ja) * | 1999-05-12 | 2003-01-07 | インフィネオン テクノロジーズ アクチェンゲゼルシャフト | 半導体構造のためのコンデンサおよびそのための誘電体層を生成するための方法 |
US6417537B1 (en) * | 2000-01-18 | 2002-07-09 | Micron Technology, Inc. | Metal oxynitride capacitor barrier layer |
US6566191B2 (en) * | 2000-12-05 | 2003-05-20 | International Business Machines Corporation | Forming electronic structures having dual dielectric thicknesses and the structure so formed |
-
2003
- 2003-08-29 JP JP2004532040A patent/JP5148814B2/ja not_active Expired - Lifetime
- 2003-08-29 AU AU2003263042A patent/AU2003263042A1/en not_active Abandoned
- 2003-08-29 EP EP03791994A patent/EP1535332B1/en not_active Expired - Lifetime
- 2003-08-29 KR KR1020057003572A patent/KR20050057084A/ko active Search and Examination
- 2003-08-29 CN CNB038208407A patent/CN1299362C/zh not_active Expired - Lifetime
- 2003-08-29 WO PCT/US2003/027367 patent/WO2004021440A1/en active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62118559A (ja) * | 1985-11-18 | 1987-05-29 | Nec Corp | 半導体装置 |
JPH0236559A (ja) * | 1988-07-26 | 1990-02-06 | Nec Corp | 半導体装置及びその製造方法 |
JPH02135770A (ja) * | 1988-11-16 | 1990-05-24 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH02214152A (ja) * | 1989-02-15 | 1990-08-27 | Olympus Optical Co Ltd | 半導体装置及びその製造方法 |
JPH0346267A (ja) * | 1989-07-13 | 1991-02-27 | Nippondenso Co Ltd | 半導体装置の製造方法 |
JPH05326841A (ja) * | 1992-05-25 | 1993-12-10 | Nec Corp | 半導体装置の製造方法 |
JPH118352A (ja) * | 1997-06-14 | 1999-01-12 | Toshiba Microelectron Corp | 半導体集積回路装置及びその製造方法 |
JP2000332127A (ja) * | 1999-05-18 | 2000-11-30 | Sony Corp | 半導体装置とその製造方法 |
JP2001111000A (ja) * | 1999-08-14 | 2001-04-20 | Samsung Electronics Co Ltd | 半導体素子及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019239804A1 (ja) * | 2018-06-15 | 2019-12-19 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
JPWO2019239804A1 (ja) * | 2018-06-15 | 2021-01-14 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
JP7036210B2 (ja) | 2018-06-15 | 2022-03-15 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
US11476056B2 (en) | 2018-06-15 | 2022-10-18 | Murata Manufacturing Co., Ltd. | Capacitor and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2004021440A1 (en) | 2004-03-11 |
JP5148814B2 (ja) | 2013-02-20 |
KR20050057084A (ko) | 2005-06-16 |
AU2003263042A1 (en) | 2004-03-19 |
EP1535332A1 (en) | 2005-06-01 |
CN1299362C (zh) | 2007-02-07 |
CN1685511A (zh) | 2005-10-19 |
EP1535332B1 (en) | 2012-04-11 |
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