JP2005531928A - 磁性体を含む電子回路の磁気遮蔽 - Google Patents
磁性体を含む電子回路の磁気遮蔽 Download PDFInfo
- Publication number
- JP2005531928A JP2005531928A JP2004517676A JP2004517676A JP2005531928A JP 2005531928 A JP2005531928 A JP 2005531928A JP 2004517676 A JP2004517676 A JP 2004517676A JP 2004517676 A JP2004517676 A JP 2004517676A JP 2005531928 A JP2005531928 A JP 2005531928A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- substrate
- disposed
- dielectric region
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0075—Magnetic shielding materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Soft Magnetic Materials (AREA)
- Semiconductor Memories (AREA)
- Hard Magnetic Materials (AREA)
Abstract
Description
ード層は、銅のような導電性物質を含み、電気化学的析出浴は、ニッケル・鉄(NiFe)、ニッケル・鉄・モリブデン(NiFeMb)、ニッケル・鉄・コバルト(NiFeCo)等といった磁気遮蔽体を含む。さらに、磁性体層の各部分は、磁性体エポキシ(magnetic epoxy)、または強磁性体粒子あるいは超常磁性体粒子を懸濁させた同様の成形物質を用いて形成されてもよい。
きる。電気化学的析出は、当業者によく知られた技法であるため、ここでさらに詳述することはしない。
きな飽和磁束密度を有さなければならないことを示す。磁束密度が飽和値を超えて上昇すると、磁界は通常、磁気シールドを透過する。
である。しかし、このような粒子は時として、図13のヒステリシス曲線80に示すように、望ましくない磁気特性を有する可能性がある。大きな残留磁化Mrすなわち保磁力Hcが、磁性体により集積回路15を最適に遮蔽することを妨げる。さらに、大きな粒子ほど、磁気特性が粒子の組成、作製方法、形状等に敏感に依存する可能性がある。
Claims (10)
- 厚さを有するとともに対向面および少なくとも1つの側面を有した基板の表面に配置される電子回路と、
該電子回路に配置される誘電体領域であって、表面および少なくとも1つの側面を含む誘電体領域と、
前記基板の前記対向面の一方に、前記誘電体領域の前記表面に隣接して配置される第1の磁性体領域とを備え、
該第1の磁性体領域は、第1の電気化学的析出浴を用いて形成される、遮蔽された電子回路装置。 - 第2の磁性体領域が前記基板の前記対向面の他方に、前記誘電体領域の前記表面に隣接して配置され、前記第2の磁性体領域は、第2の電気化学的析出浴を用いて形成される請求項1に記載の遮蔽された電子回路装置。
- 前記第1の金属物質と前記基板の前記対向面の間、および前記基板に対向する前記第1の磁性体の上のうち一方に配置される金属支持体をさらに備える請求項1に記載の遮蔽された電子回路装置。
- 前記基板の前記対向面、前記誘電体領域の前記表面に近接して配置される前記第1の磁性体の上に配置される金属支持体であって、磁性体である金属支持体をさらに備える請求項1に記載の遮蔽された電子回路装置。
- 第2の磁性体領域が前記基板の前記対向面のもう一方に、前記誘電体領域の前記表面に近接して配置され、前記第2の磁性体領域は、非磁性体マトリクス中に懸濁される複数の超常磁性体粒子、非磁性体マトリクス中に懸濁される複数の強磁性体粒子、およびそれらの組み合わせのうちの1つを含む請求項1に記載の遮蔽された電子回路装置。
- 前記第1の磁性体領域の少なくとも一部は、非晶質磁性体およびナノ結晶性磁性体のうちの1つを含む請求項1に記載の遮蔽された電子回路装置。
- 厚さ、表面、対向面、および少なくとも1つの側面を有する基板であって、電子集積回路が前記表面上に形成される基板と、
前記電子集積回路上に配置される誘電体領域であって、表面および少なくとも1つの側面を含む誘電体領域と、
該誘電体領域の前記表面および前記基板の前記対向面のうちの一方に配置される第1の磁性体領域とを備え、
該第1の磁性体領域は、前記誘電体領域の前記表面および前記基板の前記対向面のうちの一方に隣接して配置される第1の接着層、該第1の接着層上に配置される第1のシード層、および該第1のシード層上に配置される第1の磁性体層を有し、
該第1の磁性体層は、前記第1のシード層を第1の電気化学的析出浴に浸漬することによって形成される遮蔽された電子集積回路装置。 - 厚さを有するとともに電子集積回路を上部に形成された基板を設けるステップであって、該基板は表面、対向面および少なくとも1つの側面を含む、基板を設けるステップと、
前記電気集積回路上に配置される誘電体領域を設けるステップであって、該誘電体領域は表面および少なくとも1つの側面を含む、誘電体領域を設けるステップと、
該誘電体領域の前記表面および前記基板の前記対向面のうちの一方に配置される第1の磁性体領域を形成するステップであって、該第1の磁性体領域は、前記誘電体領域の前記表面および前記基板の前記対向面のうちの前記一方に隣接して配置される第1の接着層、
該第1の接着層上に配置される第1のシード層、および該第1のシード層上に配置される第1の磁性体層を含み、該第1の磁性体層は、前記第1のシード層を第1の電気化学的析出浴に浸漬することによって形成される、形成するステップとを備える、電子回路の遮蔽方法。 - 厚さを有する基板であって、表面、対向面、および少なくとも1つの側面を含み、電子集積回路が前記表面上に形成される基板と、
該基板の前記表面および前記電子集積回路の上に配置される誘電体領域であって、表面および少なくとも1つの側面を含む誘電体領域と、
該誘電体領域の前記表面上に配置される第1の磁性体領域とを備え、
該第1の磁性体領域は、或る粒径を有する複数の超常磁性体粒子を含み、該複数の超常磁性体粒子は非磁性体マトリクス中に懸濁され、
前記複数の超常磁性体粒子の粒径は、電磁放射の所望の周波数領域を減衰するように選択される、遮蔽された電子集積回路装置。 - シールドとして挙動する第1の磁性体を含む金属支持体と、
該金属支持体上に配置される、厚さを有する基板であって、表面、前記金属支持体に隣接して配置される対向面、および少なくとも1つの側面を含み、電子集積回路が前記表面上に形成される基板と、
該基板の表面および前記電子集積回路の上に配置される誘電体領域であって、表面および少なくとも1つの側面を含む誘電体領域と
を備える、遮蔽された電子集積回路装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/184,536 US6936763B2 (en) | 2002-06-28 | 2002-06-28 | Magnetic shielding for electronic circuits which include magnetic materials |
PCT/US2003/019253 WO2004004435A1 (en) | 2002-06-28 | 2003-06-18 | Magnetic shielding for electronic circuits which include magnetic materials |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005531928A true JP2005531928A (ja) | 2005-10-20 |
Family
ID=29779391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004517676A Pending JP2005531928A (ja) | 2002-06-28 | 2003-06-18 | 磁性体を含む電子回路の磁気遮蔽 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6936763B2 (ja) |
EP (1) | EP1518451B1 (ja) |
JP (1) | JP2005531928A (ja) |
KR (1) | KR101020388B1 (ja) |
CN (1) | CN100527930C (ja) |
AT (1) | ATE392802T1 (ja) |
AU (1) | AU2003280485A1 (ja) |
DE (1) | DE60320410T2 (ja) |
TW (1) | TWI278277B (ja) |
WO (1) | WO2004004435A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005311368A (ja) * | 2004-04-20 | 2005-11-04 | Taiwan Semiconductor Manufacturing Co Ltd | 磁気ランダムアクセスメモリおよびその製造方法 |
JP2010245106A (ja) * | 2009-04-01 | 2010-10-28 | Renesas Electronics Corp | 磁気記憶装置 |
WO2011046091A1 (ja) * | 2009-10-13 | 2011-04-21 | 日本電気株式会社 | 磁性体装置 |
JP2011114225A (ja) * | 2009-11-27 | 2011-06-09 | Dainippon Printing Co Ltd | 半導体装置、半導体装置の製造方法、およびシールド板 |
JP2012033861A (ja) * | 2010-08-02 | 2012-02-16 | Headway Technologies Inc | 積層半導体基板および積層チップパッケージ並びにこれらの製造方法 |
JP2012136565A (ja) * | 2010-12-24 | 2012-07-19 | Ferrotec Corp | 接着剤 |
US8835190B2 (en) | 2008-05-07 | 2014-09-16 | Renesas Electronics Corporation | Semiconductor apparatus |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7037604B2 (en) * | 2002-07-23 | 2006-05-02 | Honeywell International, Inc. | Magnetic sensing device |
US7880208B2 (en) * | 2003-06-10 | 2011-02-01 | International Business Machines Corporation | Magnetic materials having superparamagnetic particles |
US7057249B2 (en) * | 2003-07-02 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
US20060063025A1 (en) * | 2004-04-07 | 2006-03-23 | Jing-Yi Huang | Method and system for making thin metal films |
US7474499B2 (en) * | 2005-07-27 | 2009-01-06 | Seagate Technology Llc | Shielded enclosure of a disc drive for reducing penetration and influence of stray fields |
US7880278B2 (en) | 2006-05-16 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having stress tuning layer |
US7795708B2 (en) * | 2006-06-02 | 2010-09-14 | Honeywell International Inc. | Multilayer structures for magnetic shielding |
US7723819B2 (en) * | 2006-09-28 | 2010-05-25 | Intel Corporation | Granular magnetic layer with planar insulating layer |
US20080157910A1 (en) * | 2006-12-29 | 2008-07-03 | Park Chang-Min | Amorphous soft magnetic layer for on-die inductively coupled wires |
US20080157911A1 (en) * | 2006-12-29 | 2008-07-03 | Fajardo Arnel M | Soft magnetic layer for on-die inductively coupled wires with high electrical resistance |
TWI339432B (en) * | 2007-08-13 | 2011-03-21 | Ind Tech Res Inst | Magnetic shielding package structure of a magnetic memory device |
JP4975836B2 (ja) * | 2010-02-19 | 2012-07-11 | 株式会社東芝 | 磁気記録ヘッド及びそれを用いた磁気記録再生装置 |
US8415775B2 (en) | 2010-11-23 | 2013-04-09 | Honeywell International Inc. | Magnetic shielding for multi-chip module packaging |
FR2976765B1 (fr) * | 2011-06-20 | 2015-05-01 | Renault Sa | Dispositif pour proteger un espace a proximite d'une source magnetique et procede de fabrication d'un tel dispositif |
DE102012214677A1 (de) * | 2012-08-17 | 2014-02-20 | Hamilton Bonaduz Ag | Pipette mit elektromotorisch angetriebenem Kolben und Magnetfeldabschirmung |
US9070692B2 (en) | 2013-01-12 | 2015-06-30 | Avalanche Technology, Inc. | Shields for magnetic memory chip packages |
JP2015061057A (ja) | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル |
US10497506B2 (en) * | 2015-12-18 | 2019-12-03 | Texas Instruments Incorporated | Methods and apparatus for isolation barrier with integrated magnetics for high power modules |
US10923532B2 (en) | 2016-03-10 | 2021-02-16 | Toshiba Memory Corporation | Magnetic memory device |
EP3244225A1 (en) * | 2016-05-12 | 2017-11-15 | Nxp B.V. | Sensor module and method of manufacture |
US10431732B2 (en) | 2017-05-31 | 2019-10-01 | Globalfoundries Singapore Pte. Ltd. | Shielded magnetoresistive random access memory devices and methods for fabricating the same |
US10347826B1 (en) | 2018-01-08 | 2019-07-09 | Globalfoundries Singapore Pte. Ltd. | STT-MRAM flip-chip magnetic shielding and method for producing the same |
US20190320524A1 (en) * | 2018-04-13 | 2019-10-17 | GM Global Technology Operations LLC | Pcba with point field detector and magnetic shielding array located on same side of a conductor |
CN110660746B (zh) * | 2018-06-29 | 2021-07-20 | 台湾积体电路制造股份有限公司 | 存储器器件以及制造存储器器件的方法 |
JP6497477B1 (ja) * | 2018-10-03 | 2019-04-10 | 東洋インキScホールディングス株式会社 | 電磁波シールドシート、および電子部品搭載基板 |
KR102212079B1 (ko) * | 2019-03-22 | 2021-02-04 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 전자 어셈블리, 이를 포함하는 전자 장치 및 전자 어셈블리를 제작하는 방법 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05145266A (ja) * | 1991-11-22 | 1993-06-11 | Yokogawa Electric Corp | スイツチング電源の実装構造 |
JPH06151662A (ja) * | 1992-11-05 | 1994-05-31 | Sumitomo Special Metals Co Ltd | 高放熱性集積回路パッケージ |
JPH11175920A (ja) * | 1997-12-05 | 1999-07-02 | Nec Corp | 磁気抵抗効果型複合ヘッドおよびその製造方法 |
JPH11266043A (ja) * | 1998-03-18 | 1999-09-28 | Hitachi Ltd | トンネル磁気抵抗効果素子、これを用いた磁気センサー、磁気ヘッド及び磁気メモリー |
JP2000049013A (ja) * | 1998-07-30 | 2000-02-18 | Tokin Corp | 電子部品 |
JP2001250206A (ja) * | 2000-03-03 | 2001-09-14 | Fujitsu Ltd | 磁気ランダムアクセスメモリ装置 |
JP2001284878A (ja) * | 2000-04-04 | 2001-10-12 | Tokin Corp | 配線基板 |
JP2002064189A (ja) * | 2000-08-21 | 2002-02-28 | Tokin Corp | マグネティック・ランダム・アクセス・メモリ |
JP2003115578A (ja) * | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
JP2003309196A (ja) * | 2002-04-16 | 2003-10-31 | Sony Corp | 磁気不揮発性メモリ素子の磁気シールドパッケージ |
JP2004349476A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4953002A (en) | 1988-03-31 | 1990-08-28 | Honeywell Inc. | Semiconductor device housing with magnetic field protection |
JPH06260786A (ja) * | 1993-03-02 | 1994-09-16 | Cmk Corp | 磁性塗膜および電磁波シールド層を有するプリント配 線板とその製造方法 |
KR100389743B1 (ko) * | 1994-01-27 | 2003-10-04 | 록타이트(아일랜드) 리미티드 | 두세트의전도체사이에이방성전도성경로및결합을제공하기위한조성물및방법 |
US5639989A (en) * | 1994-04-19 | 1997-06-17 | Motorola Inc. | Shielded electronic component assembly and method for making the same |
US5981297A (en) * | 1997-02-05 | 1999-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Biosensor using magnetically-detected label |
US5883762A (en) * | 1997-03-13 | 1999-03-16 | Calhoun; Robert B. | Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations |
US5939772A (en) | 1997-10-31 | 1999-08-17 | Honeywell Inc. | Shielded package for magnetic devices |
US6350951B1 (en) * | 1997-12-29 | 2002-02-26 | Intel Corporation | Electric shielding of on-board devices |
JP4005762B2 (ja) * | 1999-06-30 | 2007-11-14 | 株式会社東芝 | 集積回路装置及びその製造方法 |
JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
US6730949B2 (en) * | 2001-03-22 | 2004-05-04 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device |
JP2003101280A (ja) | 2001-09-27 | 2003-04-04 | Kyocera Corp | 電磁波シールドケース及びそれを用いた電磁波シールド構造 |
JPWO2003081973A1 (ja) | 2002-03-27 | 2005-08-04 | 東洋サービス株式会社 | 電磁波遮蔽用シート、電磁波遮蔽伝送用ケーブル及び電磁波遮蔽lsi |
EP1727201A1 (en) | 2005-05-27 | 2006-11-29 | Hou, PonWei | Shielding material for preventing outleakage and penetration of electromagnetic waves |
-
2002
- 2002-06-28 US US10/184,536 patent/US6936763B2/en not_active Expired - Lifetime
-
2003
- 2003-06-18 JP JP2004517676A patent/JP2005531928A/ja active Pending
- 2003-06-18 WO PCT/US2003/019253 patent/WO2004004435A1/en active Application Filing
- 2003-06-18 CN CNB038152789A patent/CN100527930C/zh not_active Expired - Fee Related
- 2003-06-18 EP EP03742062A patent/EP1518451B1/en not_active Expired - Lifetime
- 2003-06-18 KR KR1020047021344A patent/KR101020388B1/ko active IP Right Grant
- 2003-06-18 AT AT03742062T patent/ATE392802T1/de not_active IP Right Cessation
- 2003-06-18 DE DE60320410T patent/DE60320410T2/de not_active Expired - Lifetime
- 2003-06-18 AU AU2003280485A patent/AU2003280485A1/en not_active Abandoned
- 2003-06-27 TW TW092117676A patent/TWI278277B/zh not_active IP Right Cessation
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05145266A (ja) * | 1991-11-22 | 1993-06-11 | Yokogawa Electric Corp | スイツチング電源の実装構造 |
JPH06151662A (ja) * | 1992-11-05 | 1994-05-31 | Sumitomo Special Metals Co Ltd | 高放熱性集積回路パッケージ |
JPH11175920A (ja) * | 1997-12-05 | 1999-07-02 | Nec Corp | 磁気抵抗効果型複合ヘッドおよびその製造方法 |
JPH11266043A (ja) * | 1998-03-18 | 1999-09-28 | Hitachi Ltd | トンネル磁気抵抗効果素子、これを用いた磁気センサー、磁気ヘッド及び磁気メモリー |
JP2000049013A (ja) * | 1998-07-30 | 2000-02-18 | Tokin Corp | 電子部品 |
JP2001250206A (ja) * | 2000-03-03 | 2001-09-14 | Fujitsu Ltd | 磁気ランダムアクセスメモリ装置 |
JP2001284878A (ja) * | 2000-04-04 | 2001-10-12 | Tokin Corp | 配線基板 |
JP2002064189A (ja) * | 2000-08-21 | 2002-02-28 | Tokin Corp | マグネティック・ランダム・アクセス・メモリ |
JP2003115578A (ja) * | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
JP2003309196A (ja) * | 2002-04-16 | 2003-10-31 | Sony Corp | 磁気不揮発性メモリ素子の磁気シールドパッケージ |
JP2004349476A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005311368A (ja) * | 2004-04-20 | 2005-11-04 | Taiwan Semiconductor Manufacturing Co Ltd | 磁気ランダムアクセスメモリおよびその製造方法 |
US8835190B2 (en) | 2008-05-07 | 2014-09-16 | Renesas Electronics Corporation | Semiconductor apparatus |
JP2010245106A (ja) * | 2009-04-01 | 2010-10-28 | Renesas Electronics Corp | 磁気記憶装置 |
WO2011046091A1 (ja) * | 2009-10-13 | 2011-04-21 | 日本電気株式会社 | 磁性体装置 |
JPWO2011046091A1 (ja) * | 2009-10-13 | 2013-03-07 | 日本電気株式会社 | 磁性体装置 |
JP2011114225A (ja) * | 2009-11-27 | 2011-06-09 | Dainippon Printing Co Ltd | 半導体装置、半導体装置の製造方法、およびシールド板 |
JP2012033861A (ja) * | 2010-08-02 | 2012-02-16 | Headway Technologies Inc | 積層半導体基板および積層チップパッケージ並びにこれらの製造方法 |
JP2012136565A (ja) * | 2010-12-24 | 2012-07-19 | Ferrotec Corp | 接着剤 |
Also Published As
Publication number | Publication date |
---|---|
EP1518451A1 (en) | 2005-03-30 |
DE60320410T2 (de) | 2009-05-07 |
CN100527930C (zh) | 2009-08-12 |
KR101020388B1 (ko) | 2011-03-08 |
TW200409586A (en) | 2004-06-01 |
CN1666585A (zh) | 2005-09-07 |
US6936763B2 (en) | 2005-08-30 |
WO2004004435A1 (en) | 2004-01-08 |
TWI278277B (en) | 2007-04-01 |
US20040000415A1 (en) | 2004-01-01 |
DE60320410D1 (de) | 2008-05-29 |
KR20050006303A (ko) | 2005-01-15 |
EP1518451B1 (en) | 2008-04-16 |
ATE392802T1 (de) | 2008-05-15 |
AU2003280485A1 (en) | 2004-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6936763B2 (en) | Magnetic shielding for electronic circuits which include magnetic materials | |
KR101019592B1 (ko) | 자기 메모리장치 | |
KR100944952B1 (ko) | 데이터 저장 장치 | |
US9070692B2 (en) | Shields for magnetic memory chip packages | |
EP1575054B1 (en) | Magnetic shield member, magnetic shield structure, and magnetic memory device | |
JP4096302B2 (ja) | 磁気メモリ装置 | |
EP1296331A2 (en) | Method of performing MRAM read operation | |
EP1151482B1 (en) | Spin dependent tunneling sensor | |
JP2008249406A (ja) | 磁気インピーダンス効果素子及びその製造方法 | |
JP3879576B2 (ja) | 磁気不揮発性メモリ素子の磁気シールドパッケージ | |
US11276649B2 (en) | Devices and methods having magnetic shielding layer | |
JP2005158985A (ja) | 磁気メモリ装置の実装構造及び実装基板 | |
KR100707170B1 (ko) | 균일한 스위칭 특성을 가지며 저 전류 스위칭이 가능한자기 메모리 소자 및 그 동작방법 | |
JP5727908B2 (ja) | 磁気メモリ素子 | |
US7057249B2 (en) | Magnetic memory device | |
JP2004207322A (ja) | 磁気メモリ装置 | |
KR101059875B1 (ko) | 자기 메모리 어레이 및 전자 시스템 | |
US20220344578A1 (en) | Package structure and manufacturing method thereof | |
JP2000055995A (ja) | 磁気インピーダンス素子 | |
JP2004221289A (ja) | 磁気メモリ装置 | |
US20040251506A1 (en) | Hall effect devices, memory devices, and hall effect device readout voltage increasing methods |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060517 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20060829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20060829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080909 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081209 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081216 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091006 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100106 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100831 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101130 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101207 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101228 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110128 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111004 |