JP2005311368A - 磁気ランダムアクセスメモリおよびその製造方法 - Google Patents
磁気ランダムアクセスメモリおよびその製造方法 Download PDFInfo
- Publication number
- JP2005311368A JP2005311368A JP2005119349A JP2005119349A JP2005311368A JP 2005311368 A JP2005311368 A JP 2005311368A JP 2005119349 A JP2005119349 A JP 2005119349A JP 2005119349 A JP2005119349 A JP 2005119349A JP 2005311368 A JP2005311368 A JP 2005311368A
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- Prior art keywords
- write line
- magnetic
- width
- random access
- access memory
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000010410 layer Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000002885 antiferromagnetic material Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 239000011231 conductive filler Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 9
- 239000000696 magnetic material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 MRAMは、磁気トンネル接合面106、書き込み線202および書き込み線204を備えている。書き込み線204は、書き込み線202と直角に交わり、書き込み線202または書き込み線204のうちの少なくとも一つは、その幅がMTJセル106の幅よりも小さい。このように書き込み線202、204の幅をMTJセル106の幅よりも小さく設定することにより、MRAMが使用する面積を効果的に縮小することができ、高密度化を図ることができる。
【選択図】 図2A
Description
Claims (13)
- 磁気トンネル接合面、第1の書き込み線および第2の書き込み線を備え、
前記第2の書き込み線は、前記第1の書き込み線と直角に交わり、前記第1の書き込み線または前記第2の書き込み線のうちの少なくとも一つは、その幅が前記磁気トンネル接合面の幅よりも小さいことを特徴とする磁気ランダムアクセスメモリ。 - 前記第1の書き込み線の幅および前記第2の書き込み線の幅のそれぞれは、前記磁気トンネル接合面の幅よりも小さいことを特徴とする請求項1記載の磁気ランダムアクセスメモリ。
- 前記第1の書き込み線の幅または前記第2の書き込み線の幅のうちの少なくとも一つは、前記磁気トンネル接合面の幅の半分よりも大きいことを特徴とする請求項1記載の磁気ランダムアクセスメモリ。
- 前記磁気トンネル接合面の幅の半分よりも大きい前記第1の書き込み線の幅または前記第2の書き込み線の幅のうち少なくとも一つは、前記磁気トンネル接合面の幅よりも小さいことを特徴とする請求項3記載の磁気ランダムアクセスメモリ。
- 前記書き込み線は、強磁性クラッド層および反強磁性材料層を含むシールド層へさらに接続されることを特徴とする請求項1記載の磁気ランダムアクセスメモリ。
- 前記シールド層はさらにマンガンを含むことを特徴とする請求項5記載の磁気ランダムアクセスメモリ。
- 前記第1の書き込み線または前記第2の書き込み線のうちの少なくとも一つは、平坦接触表面を有するバッファ層を介して前記磁気トンネル接合面へ接続されることを特徴とする請求項1記載の磁気ランダムアクセスメモリ。
- 前記バッファ層と前記磁気トンネル接合面との間にある前記接触表面は、化学機械的研磨工程により形成されることを特徴とする請求項7記載の磁気ランダムアクセスメモリ。
- 基板中にトレンチを形成する工程と、
前記トレンチに導電充填材料を充填する工程と、
前記導電充填材料上に導電バッファ層を形成する工程と、
前記導電バッファ層に接触される磁気トンネル接合面を形成する工程と、
を少なくとも含むことを特徴とする磁気ランダムアクセスメモリの書き込み線の形成方法。 - 前記基板は誘電材料からなることを特徴とする請求項9記載の磁気ランダムアクセスメモリの書き込み線の形成方法。
- 前記導電バッファ層を形成する工程は、化学機械的研磨法により平坦接触表面を形成し、前記導電バッファ層を前記磁気トンネル接合面に接触させる工程を少なくとも含むことを特徴とする請求項9記載の磁気ランダムアクセスメモリの書き込み線の形成方法。
- 前記導電充填材料を取り囲む磁性層を形成する工程をさらに含むことを特徴とする請求項9記載の磁気ランダムアクセスメモリの書き込み線の形成方法。
- 前記導電充填材料と前記磁性層との間に粘着層を形成する工程をさらに含むことを特徴とする請求項12記載の磁気ランダムアクセスメモリの書き込み線の形成方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/827,769 US7105879B2 (en) | 2004-04-20 | 2004-04-20 | Write line design in MRAM |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005311368A true JP2005311368A (ja) | 2005-11-04 |
Family
ID=35097360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005119349A Pending JP2005311368A (ja) | 2004-04-20 | 2005-04-18 | 磁気ランダムアクセスメモリおよびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7105879B2 (ja) |
JP (1) | JP2005311368A (ja) |
CN (1) | CN100454433C (ja) |
TW (1) | TWI267977B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
US7217666B2 (en) * | 2004-03-02 | 2007-05-15 | Hitachi Global Storage Technologies Netherlands B.V. | Reactive ion milling/RIE assisted CMP |
US7543211B2 (en) * | 2005-01-31 | 2009-06-02 | Everspin Technologies, Inc. | Toggle memory burst |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002118239A (ja) * | 2000-07-21 | 2002-04-19 | Hewlett Packard Co <Hp> | Mramの性能を向上させるための最適な書込導体レイアウト |
WO2003054946A1 (en) * | 2001-12-20 | 2003-07-03 | Micron Technology, Inc. | A method of improving surface planarity prior to mram bit material deposition |
JP2003209226A (ja) * | 2002-01-16 | 2003-07-25 | Toshiba Corp | 磁気メモリ |
WO2004004435A1 (en) * | 2002-06-28 | 2004-01-08 | Motorola Inc. A Corporation Of The State Of Delaware | Magnetic shielding for electronic circuits which include magnetic materials |
JP2004104027A (ja) * | 2002-09-12 | 2004-04-02 | Nec Corp | Mramメモリセル及び自発磁化反転促進方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US4933051A (en) * | 1989-07-24 | 1990-06-12 | Omi International Corporation | Cyanide-free copper plating process |
US6097625A (en) | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
JP4309075B2 (ja) * | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
US6331943B1 (en) | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
US6272041B1 (en) | 2000-08-28 | 2001-08-07 | Motorola, Inc. | MTJ MRAM parallel-parallel architecture |
US6430084B1 (en) | 2001-08-27 | 2002-08-06 | Motorola, Inc. | Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer |
JP2003151260A (ja) * | 2001-11-13 | 2003-05-23 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US6846683B2 (en) * | 2002-05-10 | 2005-01-25 | Infineon Technologies Ag | Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers |
US6816402B2 (en) * | 2002-06-21 | 2004-11-09 | Micron Technology, Inc. | Row and column line geometries for improving MRAM write operations |
JP3959335B2 (ja) * | 2002-07-30 | 2007-08-15 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
US6785159B2 (en) * | 2002-08-29 | 2004-08-31 | Micron Technology, Inc. | Combination etch stop and in situ resistor in a magnetoresistive memory and methods for fabricating same |
-
2004
- 2004-04-20 US US10/827,769 patent/US7105879B2/en not_active Expired - Lifetime
-
2005
- 2005-04-15 TW TW094112092A patent/TWI267977B/zh active
- 2005-04-18 JP JP2005119349A patent/JP2005311368A/ja active Pending
- 2005-04-20 CN CNB2005100664130A patent/CN100454433C/zh active Active
-
2006
- 2006-08-16 US US11/505,141 patent/US20060278908A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002118239A (ja) * | 2000-07-21 | 2002-04-19 | Hewlett Packard Co <Hp> | Mramの性能を向上させるための最適な書込導体レイアウト |
WO2003054946A1 (en) * | 2001-12-20 | 2003-07-03 | Micron Technology, Inc. | A method of improving surface planarity prior to mram bit material deposition |
JP2005514764A (ja) * | 2001-12-20 | 2005-05-19 | マイクロン テクノロジー インコーポレイテッド | Mramのビット材料堆積前に表面平坦性を改善する方法 |
JP2003209226A (ja) * | 2002-01-16 | 2003-07-25 | Toshiba Corp | 磁気メモリ |
WO2004004435A1 (en) * | 2002-06-28 | 2004-01-08 | Motorola Inc. A Corporation Of The State Of Delaware | Magnetic shielding for electronic circuits which include magnetic materials |
JP2005531928A (ja) * | 2002-06-28 | 2005-10-20 | モトローラ・インコーポレイテッド | 磁性体を含む電子回路の磁気遮蔽 |
JP2004104027A (ja) * | 2002-09-12 | 2004-04-02 | Nec Corp | Mramメモリセル及び自発磁化反転促進方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI267977B (en) | 2006-12-01 |
US20060278908A1 (en) | 2006-12-14 |
CN100454433C (zh) | 2009-01-21 |
US20050234659A1 (en) | 2005-10-20 |
US7105879B2 (en) | 2006-09-12 |
CN1691201A (zh) | 2005-11-02 |
TW200537680A (en) | 2005-11-16 |
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