JP5727908B2 - 磁気メモリ素子 - Google Patents
磁気メモリ素子 Download PDFInfo
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- JP5727908B2 JP5727908B2 JP2011209990A JP2011209990A JP5727908B2 JP 5727908 B2 JP5727908 B2 JP 5727908B2 JP 2011209990 A JP2011209990 A JP 2011209990A JP 2011209990 A JP2011209990 A JP 2011209990A JP 5727908 B2 JP5727908 B2 JP 5727908B2
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- magnetic
- electrode
- magnetic wire
- insulating layer
- memory element
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- 230000005291 magnetic effect Effects 0.000 title claims description 245
- 230000005381 magnetic domain Effects 0.000 claims description 15
- 230000005415 magnetization Effects 0.000 description 29
- 238000010586 diagram Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 238000001514 detection method Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005036 potential barrier Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000002902 ferrimagnetic material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
(第1の実施形態)
(第1の変形例)
(第2の変形例)
Claims (9)
- 第1方向に延在し、磁壁により隔てられた複数の磁区を有する磁性細線と、
前記磁性細線に対して前記第1の方向又は前記第1の方向と逆方向に通電可能な一対の第1の電極と、
前記第1の方向に直交する第2の方向において、前記磁性細線上に設けられた第1の絶縁層と、
前記第2の方向であって前記第1の絶縁層上に離間して設けられた複数の第2の電極と、
複数の前記第2の電極と電気的に接続された第3の電極と、
前記第1の方向において、複数の前記第2の電極を互いに絶縁する第2の絶縁層を備え、
前記第1の絶縁層の比誘電率は、前記第2の絶縁層の比誘電率よりも大きい磁気メモリ素子。 - 前記第2の電極と前記第3の電極は一体となっている請求項1に記載の磁気メモリ素子。
- 前記第1の方向における前記第2の電極の厚さは、前記磁壁の厚さよりも厚い請求項2に記載の磁気メモリ素子。
- 前記磁性細線の前記第1の絶縁層が設けられた側とは反対側に設けられた第3の絶縁層と、
前記第3の絶縁層の前記磁性細線が設けられた側とは反対側であり、かつ複数の前記第2の絶縁層と対向するように設けられた複数の第4の電極と、
複数の前記第4の電極と電気的に接続された第5の電極と、
を更に備える請求項2に記載の磁気メモリ素子。 - 前記第1の方向において、複数の前記第4の電極を互いに絶縁する第4の絶縁層を更に備える請求項4に記載の磁気メモリ素子。
- 前記第3の絶縁層の比誘電率は、前記第4の絶縁層の比誘電率よりも大きい請求項5に記載の磁気メモリ素子。
- 前記第4の電極と前記第5の電極は一体となっている請求項6に記載の磁気メモリ素子。
- 前記第1の方向における前記第4の電極の厚さは、前記磁壁の厚さよりも厚い請求項7に記載の磁気メモリ素子。
- 第1方向に延在し、磁壁により隔てられた複数の磁区を有する磁性細線と、
前記磁性細線に対して前記第1の方向又は前記第1の方向と逆方向に通電可能な一対の第1の電極と、
前記第1の方向に直交する第2の方向において、前記磁性細線上に離間して設けられた複数の第1の絶縁層と、
前記第2の方向であって前記複数の第1の絶縁層上に設けられた複数の第2の電極と、
前記複数の第2の電極と電気的に接続された第3の電極と、
前記第1の方向において、複数の前記第2の電極を互いに絶縁する第2の絶縁層を備え、
前記第1の絶縁層の比誘電率は、前記第2の絶縁層の比誘電率よりも大きい磁気メモリ素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209990A JP5727908B2 (ja) | 2011-09-26 | 2011-09-26 | 磁気メモリ素子 |
US13/422,030 US8634237B2 (en) | 2011-09-26 | 2012-03-16 | Magnetic memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209990A JP5727908B2 (ja) | 2011-09-26 | 2011-09-26 | 磁気メモリ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013073980A JP2013073980A (ja) | 2013-04-22 |
JP5727908B2 true JP5727908B2 (ja) | 2015-06-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011209990A Expired - Fee Related JP5727908B2 (ja) | 2011-09-26 | 2011-09-26 | 磁気メモリ素子 |
Country Status (2)
Country | Link |
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US (1) | US8634237B2 (ja) |
JP (1) | JP5727908B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5658721B2 (ja) | 2012-09-24 | 2015-01-28 | 株式会社東芝 | 磁気メモリ |
JP6071401B2 (ja) | 2012-10-11 | 2017-02-01 | 株式会社東芝 | 磁気メモリ |
JP6172850B2 (ja) * | 2013-07-30 | 2017-08-02 | 東芝メモリ株式会社 | 磁気記憶素子、磁気記憶装置、磁気メモリ、および磁気記憶素子の駆動方法 |
US9123878B2 (en) | 2013-09-09 | 2015-09-01 | Kabushiki Kaisha Toshiba | Magnetic memory device utilizing magnetic domain wall motion |
JP6523666B2 (ja) | 2014-12-02 | 2019-06-05 | 東芝メモリ株式会社 | 磁気記憶素子および磁気メモリ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273495A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 磁気メモリ装置及びその駆動方法 |
KR100846510B1 (ko) * | 2006-12-22 | 2008-07-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
JP2009130197A (ja) * | 2007-11-26 | 2009-06-11 | Fujitsu Ltd | 磁気メモリ及びその製造方法 |
JP2009239135A (ja) * | 2008-03-28 | 2009-10-15 | Tokyo Metropolitan Univ | 磁気メモリセル及びそれを用いた磁気記憶装置、磁気記憶方法 |
JP5431400B2 (ja) | 2011-03-28 | 2014-03-05 | 株式会社東芝 | 磁気記憶素子 |
JP5727836B2 (ja) | 2011-03-30 | 2015-06-03 | 株式会社東芝 | 磁気記憶素子、磁気記憶装置、磁壁移動方法 |
-
2011
- 2011-09-26 JP JP2011209990A patent/JP5727908B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-16 US US13/422,030 patent/US8634237B2/en active Active
Also Published As
Publication number | Publication date |
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US8634237B2 (en) | 2014-01-21 |
US20130077395A1 (en) | 2013-03-28 |
JP2013073980A (ja) | 2013-04-22 |
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