JP2005509269A - 洗浄不要フラックスを使用したフリップ・チップ相互接続 - Google Patents

洗浄不要フラックスを使用したフリップ・チップ相互接続 Download PDF

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Publication number
JP2005509269A
JP2005509269A JP2002578564A JP2002578564A JP2005509269A JP 2005509269 A JP2005509269 A JP 2005509269A JP 2002578564 A JP2002578564 A JP 2002578564A JP 2002578564 A JP2002578564 A JP 2002578564A JP 2005509269 A JP2005509269 A JP 2005509269A
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Japan
Prior art keywords
temperature
chip
substrate
solder
solder bumps
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Pending
Application number
JP2002578564A
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English (en)
Japanese (ja)
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JP2005509269A5 (fr
Inventor
タカハシ，ケンジ
マエダ，ミチヒサ
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Intel Corp
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Intel Corp
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Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2005509269A publication Critical patent/JP2005509269A/ja
Publication of JP2005509269A5 publication Critical patent/JP2005509269A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3618—Carboxylic acids or salts
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/05573—Single external layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Detergent Compositions (AREA)
JP2002578564A 2001-03-28 2002-03-22 洗浄不要フラックスを使用したフリップ・チップ相互接続 Pending JP2005509269A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/820,547 US6713318B2 (en) 2001-03-28 2001-03-28 Flip chip interconnection using no-clean flux
PCT/US2002/008903 WO2002080263A2 (fr) 2001-03-28 2002-03-22 Interconnexion par billes utilisant un flux ne necessitant pas de defluxage

Publications (2)

Publication Number Publication Date
JP2005509269A true JP2005509269A (ja) 2005-04-07
JP2005509269A5 JP2005509269A5 (fr) 2005-12-22

Family

ID=25231108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002578564A Pending JP2005509269A (ja) 2001-03-28 2002-03-22 洗浄不要フラックスを使用したフリップ・チップ相互接続

Country Status (11)

Country Link
US (2) US6713318B2 (fr)
EP (1) EP1374297B1 (fr)
JP (1) JP2005509269A (fr)
KR (1) KR100555395B1 (fr)
CN (1) CN1295771C (fr)
AT (1) ATE403231T1 (fr)
AU (1) AU2002248684A1 (fr)
DE (1) DE60227926D1 (fr)
HK (1) HK1060938A1 (fr)
MY (1) MY122890A (fr)
WO (1) WO2002080263A2 (fr)

Cited By (6)

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JP2007189210A (ja) * 2005-12-13 2007-07-26 Shin Etsu Chem Co Ltd フリップチップ型半導体装置の組立方法及びその方法を用いて製作された半導体装置
JPWO2012096373A1 (ja) * 2011-01-14 2014-06-09 旭硝子株式会社 車両用窓ガラスおよびその製造方法
WO2017057649A1 (fr) * 2015-09-30 2017-04-06 オリジン電気株式会社 Procédé de fabrication de produit brasé
JP2017126698A (ja) * 2016-01-15 2017-07-20 富士電機株式会社 半導体装置用部材及び半導体装置の製造方法、及び半導体装置用部材
JP2019208021A (ja) * 2018-05-25 2019-12-05 日亜化学工業株式会社 発光モジュールの製造方法
WO2021033526A1 (fr) * 2019-08-22 2021-02-25 スタンレー電気株式会社 Dispositif électroluminescent et son procédé de fabrication

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JP4023093B2 (ja) * 2001-01-18 2007-12-19 松下電器産業株式会社 電子部品の固定方法
US6713318B2 (en) * 2001-03-28 2004-03-30 Intel Corporation Flip chip interconnection using no-clean flux
US7115998B2 (en) * 2002-08-29 2006-10-03 Micron Technology, Inc. Multi-component integrated circuit contacts
US20050029675A1 (en) * 2003-03-31 2005-02-10 Fay Hua Tin/indium lead-free solders for low stress chip attachment
US20040187976A1 (en) * 2003-03-31 2004-09-30 Fay Hua Phase change lead-free super plastic solders
US7037805B2 (en) * 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
TWI230989B (en) * 2004-05-05 2005-04-11 Megic Corp Chip bonding method
US7405093B2 (en) * 2004-08-18 2008-07-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US7288472B2 (en) * 2004-12-21 2007-10-30 Intel Corporation Method and system for performing die attach using a flame
US7790484B2 (en) * 2005-06-08 2010-09-07 Sharp Kabushiki Kaisha Method for manufacturing laser devices
JPWO2006134891A1 (ja) * 2005-06-16 2009-01-08 千住金属工業株式会社 モジュール基板のはんだ付け方法
US7215030B2 (en) * 2005-06-27 2007-05-08 Advanced Micro Devices, Inc. Lead-free semiconductor package
TW200739836A (en) * 2005-12-13 2007-10-16 Shinetsu Chemical Co Process for producing flip-chip type semiconductor device and semiconductor device produced by the process
US20100015762A1 (en) * 2008-07-15 2010-01-21 Mohammad Khan Solder Interconnect
JP2011009335A (ja) * 2009-06-24 2011-01-13 Fujitsu Ltd 半田接合構造及びこれを用いた電子装置並びに半田接合方法
US7871860B1 (en) * 2009-11-17 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor packaging
US8381966B2 (en) * 2011-02-28 2013-02-26 International Business Machines Corporation Flip chip assembly method employing post-contact differential heating
JP6035714B2 (ja) * 2011-08-17 2016-11-30 ソニー株式会社 半導体装置、半導体装置の製造方法、及び、電子機器
TWI430421B (zh) * 2011-11-07 2014-03-11 矽品精密工業股份有限公司 覆晶接合方法
US8967452B2 (en) * 2012-04-17 2015-03-03 Asm Technology Singapore Pte Ltd Thermal compression bonding of semiconductor chips
CN102723427B (zh) * 2012-05-30 2015-09-02 惠州市大亚湾永昶电子工业有限公司 Led晶片共晶焊接工艺
CN103920956B (zh) * 2013-01-11 2016-05-11 无锡华润安盛科技有限公司 一种回流工艺焊接方法
US20150014852A1 (en) * 2013-07-12 2015-01-15 Yueli Liu Package assembly configurations for multiple dies and associated techniques
CN104752596A (zh) * 2013-12-30 2015-07-01 江西省晶瑞光电有限公司 一种led倒装晶片的固晶方法
CN104916554A (zh) * 2014-03-11 2015-09-16 东莞高伟光学电子有限公司 将半导体器件或元件焊接到基板上的方法和装置
US9426898B2 (en) * 2014-06-30 2016-08-23 Kulicke And Soffa Industries, Inc. Thermocompression bonders, methods of operating thermocompression bonders, and interconnect methods for fine pitch flip chip assembly
US9385060B1 (en) * 2014-07-25 2016-07-05 Altera Corporation Integrated circuit package with enhanced thermal conduction
KR101619460B1 (ko) * 2014-11-18 2016-05-11 주식회사 프로텍 적층형 반도체 패키지의 제조장치
KR20170009750A (ko) * 2015-07-15 2017-01-25 서울바이오시스 주식회사 발광 다이오드 패키지 제조 방법
US20170173745A1 (en) 2015-12-22 2017-06-22 International Business Machines Corporation No clean flux composition and methods for use thereof
EP3208028B1 (fr) * 2016-02-19 2021-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé et dispositif de fixation réversible d'un métal en changement de phase sur un objet
US10160066B2 (en) * 2016-11-01 2018-12-25 GM Global Technology Operations LLC Methods and systems for reinforced adhesive bonding using solder elements and flux
CN108620764B (zh) * 2017-03-24 2022-03-08 苏州昭舜物联科技有限公司 低温软钎焊接用焊膏及制备方法
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MY122890A (en) 2006-05-31
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WO2002080263A3 (fr) 2003-09-04
DE60227926D1 (de) 2008-09-11
HK1060938A1 (en) 2004-08-27
AU2002248684A1 (en) 2002-10-15
ATE403231T1 (de) 2008-08-15
US20020142517A1 (en) 2002-10-03
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US20040152238A1 (en) 2004-08-05

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