HK1060938A1 - Flip chip interconnection using no-clean flux - Google Patents
Flip chip interconnection using no-clean fluxInfo
- Publication number
- HK1060938A1 HK1060938A1 HK04103833.1A HK04103833A HK1060938A1 HK 1060938 A1 HK1060938 A1 HK 1060938A1 HK 04103833 A HK04103833 A HK 04103833A HK 1060938 A1 HK1060938 A1 HK 1060938A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- chip
- substrate
- solder bumps
- flow temperature
- flip chip
- Prior art date
Links
- 230000004907 flux Effects 0.000 title abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 2
- 238000007906 compression Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000009736 wetting Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3618—Carboxylic acids or salts
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L2924/01006—Carbon [C]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01051—Antimony [Sb]
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/820,547 US6713318B2 (en) | 2001-03-28 | 2001-03-28 | Flip chip interconnection using no-clean flux |
PCT/US2002/008903 WO2002080263A2 (en) | 2001-03-28 | 2002-03-22 | Flip chip interconnection using no-clean flux |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1060938A1 true HK1060938A1 (en) | 2004-08-27 |
Family
ID=25231108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK04103833.1A HK1060938A1 (en) | 2001-03-28 | 2004-05-28 | Flip chip interconnection using no-clean flux |
Country Status (11)
Country | Link |
---|---|
US (2) | US6713318B2 (xx) |
EP (1) | EP1374297B1 (xx) |
JP (1) | JP2005509269A (xx) |
KR (1) | KR100555395B1 (xx) |
CN (1) | CN1295771C (xx) |
AT (1) | ATE403231T1 (xx) |
AU (1) | AU2002248684A1 (xx) |
DE (1) | DE60227926D1 (xx) |
HK (1) | HK1060938A1 (xx) |
MY (1) | MY122890A (xx) |
WO (1) | WO2002080263A2 (xx) |
Families Citing this family (46)
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JP4023093B2 (ja) * | 2001-01-18 | 2007-12-19 | 松下電器産業株式会社 | 電子部品の固定方法 |
US6713318B2 (en) * | 2001-03-28 | 2004-03-30 | Intel Corporation | Flip chip interconnection using no-clean flux |
US7115998B2 (en) * | 2002-08-29 | 2006-10-03 | Micron Technology, Inc. | Multi-component integrated circuit contacts |
US20050029675A1 (en) * | 2003-03-31 | 2005-02-10 | Fay Hua | Tin/indium lead-free solders for low stress chip attachment |
US20040187976A1 (en) * | 2003-03-31 | 2004-09-30 | Fay Hua | Phase change lead-free super plastic solders |
US7037805B2 (en) * | 2003-05-07 | 2006-05-02 | Honeywell International Inc. | Methods and apparatus for attaching a die to a substrate |
US6969638B2 (en) * | 2003-06-27 | 2005-11-29 | Texas Instruments Incorporated | Low cost substrate for an integrated circuit device with bondpads free of plated gold |
TWI230989B (en) * | 2004-05-05 | 2005-04-11 | Megic Corp | Chip bonding method |
US7405093B2 (en) * | 2004-08-18 | 2008-07-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
US7288472B2 (en) * | 2004-12-21 | 2007-10-30 | Intel Corporation | Method and system for performing die attach using a flame |
US7790484B2 (en) * | 2005-06-08 | 2010-09-07 | Sharp Kabushiki Kaisha | Method for manufacturing laser devices |
JPWO2006134891A1 (ja) * | 2005-06-16 | 2009-01-08 | 千住金属工業株式会社 | モジュール基板のはんだ付け方法 |
US7215030B2 (en) * | 2005-06-27 | 2007-05-08 | Advanced Micro Devices, Inc. | Lead-free semiconductor package |
JP2007189210A (ja) * | 2005-12-13 | 2007-07-26 | Shin Etsu Chem Co Ltd | フリップチップ型半導体装置の組立方法及びその方法を用いて製作された半導体装置 |
TW200739836A (en) * | 2005-12-13 | 2007-10-16 | Shinetsu Chemical Co | Process for producing flip-chip type semiconductor device and semiconductor device produced by the process |
US20100015762A1 (en) * | 2008-07-15 | 2010-01-21 | Mohammad Khan | Solder Interconnect |
JP2011009335A (ja) * | 2009-06-24 | 2011-01-13 | Fujitsu Ltd | 半田接合構造及びこれを用いた電子装置並びに半田接合方法 |
US7871860B1 (en) * | 2009-11-17 | 2011-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor packaging |
JP6186725B2 (ja) * | 2011-01-14 | 2017-08-30 | 旭硝子株式会社 | 車両用窓ガラスの製造方法 |
US8381966B2 (en) * | 2011-02-28 | 2013-02-26 | International Business Machines Corporation | Flip chip assembly method employing post-contact differential heating |
JP6035714B2 (ja) * | 2011-08-17 | 2016-11-30 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
TWI430421B (zh) * | 2011-11-07 | 2014-03-11 | 矽品精密工業股份有限公司 | 覆晶接合方法 |
US8967452B2 (en) * | 2012-04-17 | 2015-03-03 | Asm Technology Singapore Pte Ltd | Thermal compression bonding of semiconductor chips |
CN102723427B (zh) * | 2012-05-30 | 2015-09-02 | 惠州市大亚湾永昶电子工业有限公司 | Led晶片共晶焊接工艺 |
CN103920956B (zh) * | 2013-01-11 | 2016-05-11 | 无锡华润安盛科技有限公司 | 一种回流工艺焊接方法 |
US20150014852A1 (en) * | 2013-07-12 | 2015-01-15 | Yueli Liu | Package assembly configurations for multiple dies and associated techniques |
CN104752596A (zh) * | 2013-12-30 | 2015-07-01 | 江西省晶瑞光电有限公司 | 一种led倒装晶片的固晶方法 |
CN104916554A (zh) * | 2014-03-11 | 2015-09-16 | 东莞高伟光学电子有限公司 | 将半导体器件或元件焊接到基板上的方法和装置 |
US9426898B2 (en) * | 2014-06-30 | 2016-08-23 | Kulicke And Soffa Industries, Inc. | Thermocompression bonders, methods of operating thermocompression bonders, and interconnect methods for fine pitch flip chip assembly |
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CN108620764B (zh) * | 2017-03-24 | 2022-03-08 | 苏州昭舜物联科技有限公司 | 低温软钎焊接用焊膏及制备方法 |
US10750614B2 (en) * | 2017-06-12 | 2020-08-18 | Invensas Corporation | Deformable electrical contacts with conformable target pads |
WO2019170211A1 (de) | 2018-03-05 | 2019-09-12 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer sandwichanordnung |
US20190364669A1 (en) * | 2018-05-25 | 2019-11-28 | Nichia Corporation | Method for manufacturing light emitting module |
CN109712899A (zh) * | 2018-12-27 | 2019-05-03 | 通富微电子股份有限公司 | 一种半导体封装方法及半导体封装器件 |
JP2021034502A (ja) | 2019-08-22 | 2021-03-01 | スタンレー電気株式会社 | 発光装置、および、その製造方法 |
CN111653494B (zh) * | 2020-06-16 | 2021-10-15 | 中国电子科技集团公司第二十四研究所 | 非接触式加热的倒装焊工艺方法 |
US11824037B2 (en) * | 2020-12-31 | 2023-11-21 | International Business Machines Corporation | Assembly of a chip to a substrate |
CN113644237A (zh) * | 2021-07-26 | 2021-11-12 | 江苏超威电源有限公司 | 一种铅网板栅在涂板线的在线预处理方法 |
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-
2001
- 2001-03-28 US US09/820,547 patent/US6713318B2/en not_active Expired - Lifetime
-
2002
- 2002-03-04 MY MYPI20020760A patent/MY122890A/en unknown
- 2002-03-22 AU AU2002248684A patent/AU2002248684A1/en not_active Abandoned
- 2002-03-22 AT AT02717699T patent/ATE403231T1/de not_active IP Right Cessation
- 2002-03-22 CN CNB028075471A patent/CN1295771C/zh not_active Expired - Fee Related
- 2002-03-22 DE DE60227926T patent/DE60227926D1/de not_active Expired - Fee Related
- 2002-03-22 WO PCT/US2002/008903 patent/WO2002080263A2/en active Application Filing
- 2002-03-22 JP JP2002578564A patent/JP2005509269A/ja active Pending
- 2002-03-22 EP EP02717699A patent/EP1374297B1/en not_active Expired - Lifetime
- 2002-03-22 KR KR1020037012606A patent/KR100555395B1/ko not_active IP Right Cessation
-
2004
- 2004-01-21 US US10/762,013 patent/US20040152238A1/en not_active Abandoned
- 2004-05-28 HK HK04103833.1A patent/HK1060938A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002080263A2 (en) | 2002-10-10 |
CN1295771C (zh) | 2007-01-17 |
CN1537327A (zh) | 2004-10-13 |
US6713318B2 (en) | 2004-03-30 |
KR20030092026A (ko) | 2003-12-03 |
MY122890A (en) | 2006-05-31 |
EP1374297B1 (en) | 2008-07-30 |
WO2002080263A3 (en) | 2003-09-04 |
JP2005509269A (ja) | 2005-04-07 |
DE60227926D1 (de) | 2008-09-11 |
AU2002248684A1 (en) | 2002-10-15 |
ATE403231T1 (de) | 2008-08-15 |
US20020142517A1 (en) | 2002-10-03 |
EP1374297A2 (en) | 2004-01-02 |
KR100555395B1 (ko) | 2006-02-24 |
US20040152238A1 (en) | 2004-08-05 |
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Effective date: 20150322 |