JP2005502159A5 - - Google Patents

Download PDF

Info

Publication number
JP2005502159A5
JP2005502159A5 JP2002586371A JP2002586371A JP2005502159A5 JP 2005502159 A5 JP2005502159 A5 JP 2005502159A5 JP 2002586371 A JP2002586371 A JP 2002586371A JP 2002586371 A JP2002586371 A JP 2002586371A JP 2005502159 A5 JP2005502159 A5 JP 2005502159A5
Authority
JP
Japan
Prior art keywords
layer
emitter
tunnel
tunnel layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002586371A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005502159A (ja
Filing date
Publication date
Priority claimed from US09/846,127 external-priority patent/US6781146B2/en
Application filed filed Critical
Publication of JP2005502159A publication Critical patent/JP2005502159A/ja
Publication of JP2005502159A5 publication Critical patent/JP2005502159A5/ja
Withdrawn legal-status Critical Current

Links

JP2002586371A 2001-04-30 2002-04-16 トンネル放出器 Withdrawn JP2005502159A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,127 US6781146B2 (en) 2001-04-30 2001-04-30 Annealed tunneling emitter
PCT/US2002/012257 WO2002089167A2 (en) 2001-04-30 2002-04-16 Tunneling emitter

Publications (2)

Publication Number Publication Date
JP2005502159A JP2005502159A (ja) 2005-01-20
JP2005502159A5 true JP2005502159A5 (https=) 2007-02-01

Family

ID=25297021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586371A Withdrawn JP2005502159A (ja) 2001-04-30 2002-04-16 トンネル放出器

Country Status (8)

Country Link
US (3) US6781146B2 (https=)
EP (1) EP1384244B1 (https=)
JP (1) JP2005502159A (https=)
KR (1) KR20040015202A (https=)
CN (1) CN1539152A (https=)
DE (1) DE60201748T2 (https=)
TW (1) TW550621B (https=)
WO (1) WO2002089167A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6758711B2 (en) * 2001-06-14 2004-07-06 Hewlett-Packard Development Company, L.P. Integrated focusing emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6841794B2 (en) * 2003-02-18 2005-01-11 Hewlett-Packard Development Company, L.P. Dielectric emitter with PN junction
KR100935934B1 (ko) * 2003-03-15 2010-01-11 삼성전자주식회사 전자빔 리소그라피 시스템의 에미터 및 그 제조방법
US20040213128A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Beam deflector for a data storage device
US20040213098A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Focus-detecting emitter for a data storage device
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US7187124B2 (en) * 2004-02-17 2007-03-06 Hewlett-Packard Development Company, L.P. Transparent electron source emitter device and method
US7454221B1 (en) * 2005-07-12 2008-11-18 Hewlett-Packard Development Company, L.P. Electron tube amplification
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US10109794B2 (en) * 2015-06-08 2018-10-23 SK Hynix Inc. Semiconductor device including an etching stop layer and method of manufacturing the same
CN106252179A (zh) * 2016-08-29 2016-12-21 北京大学 一种基于阻变材料的微型电子源及其阵列和实现方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
GB2109159B (en) 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
DE3752249T2 (de) 1986-07-04 1999-07-08 Canon K.K., Tokio/Tokyo Elektronen emittierende Vorrichtung
EP0365630B1 (fr) 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
DE69033677T2 (de) 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
US5814832A (en) 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
JPH0512988A (ja) 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
EP0532019B1 (en) 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
US5473218A (en) * 1994-05-31 1995-12-05 Motorola, Inc. Diamond cold cathode using patterned metal for electron emission control
JP3532275B2 (ja) 1994-12-28 2004-05-31 ソニー株式会社 平面表示パネル
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
EP0779642B1 (en) * 1995-12-14 2000-09-13 STMicroelectronics S.r.l. Process for fabricating a microtip cathode assembly for a field emission display panel
JP3171785B2 (ja) * 1996-06-20 2001-06-04 富士通株式会社 薄型表示装置、及びそれに用いる電界放出陰極の製造方法
US5825049A (en) * 1996-10-09 1998-10-20 Sandia Corporation Resonant tunneling device with two-dimensional quantum well emitter and base layers
JPH10308166A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6130503A (en) * 1997-03-04 2000-10-10 Pioneer Electronic Corporation Electron emission device and display using the same
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
US6034479A (en) * 1997-10-29 2000-03-07 Micron Technology, Inc. Single pixel tester for field emission displays
US6011356A (en) 1998-04-30 2000-01-04 St. Clair Intellectual Property Consultants, Inc. Flat surface emitter for use in field emission display devices
US6137212A (en) 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
US6211608B1 (en) * 1998-06-11 2001-04-03 Micron Technology, Inc. Field emission device with buffer layer and method of making
JP2000011859A (ja) 1998-06-22 2000-01-14 Yamaha Corp 電界放射型素子の製造方法
US6107732A (en) 1998-07-13 2000-08-22 Si Diamond Technology, Inc. Inhibiting edge emission for an addressable field emission thin film flat cathode display
US6118136A (en) * 1998-07-31 2000-09-12 National Science Council Of Republic Of China Superlatticed negative-differential-resistance functional transistor
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
US6328620B1 (en) * 1998-12-04 2001-12-11 Micron Technology, Inc. Apparatus and method for forming cold-cathode field emission displays
JP2001118500A (ja) 1999-10-18 2001-04-27 Matsushita Electric Works Ltd 電界放射型電子源およびその製造方法
JP3508652B2 (ja) 1999-10-18 2004-03-22 松下電工株式会社 電界放射型電子源およびその製造方法
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
KR20010082591A (ko) * 1999-12-21 2001-08-30 이데이 노부유끼 전자 방출 장치, 냉음극 전계 전자 방출 소자 및 그 제조방법, 및 냉음극 전계 전자 방출 표시 장치 및 그 제조 방법
JP3874396B2 (ja) * 2000-01-13 2007-01-31 パイオニア株式会社 電子放出素子及びその製造方法並びに電子放出素子を用いた表示装置
US6729746B2 (en) * 2000-03-14 2004-05-04 Toyoda Gosei Co., Ltd. Light source device
US6617774B1 (en) * 2000-04-10 2003-09-09 Hitachi, Ltd. Thin-film electron emitter device having multi-layered electron emission areas
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer

Similar Documents

Publication Publication Date Title
KR100480773B1 (ko) 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법
JP2005502159A5 (https=)
JP2966842B1 (ja) 電界放射型電子源
US7887878B2 (en) Method of manufacturing a fine-patternable, carbon nano-tube emitter with high reliabilty
KR100416141B1 (ko) 카본계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조방법
JP2987140B2 (ja) 電界放射型電子源およびその製造方法および平面発光装置およびディスプレイ装置および固体真空デバイス
JP4043153B2 (ja) 電子放出源の製造方法、エミッタ基板の製造方法、電子放出源及び蛍光発光型表示器
JP2005515584A5 (https=)
JP2001043792A5 (https=)
JP4036572B2 (ja) 電子放出源の製造方法
JP3581296B2 (ja) 冷陰極及びその製造方法
KR20020051592A (ko) 카본 나노튜브 캐소드를 가진 삼극형 전계 방출 소자 및이를 이용한 삼극형 고주파 진공 장치와 전계 방출디스플레이 장치
JP3633598B2 (ja) 電子放出素子の製造方法及び表示装置の製造方法
JP2006511914A (ja) 保護層の選択的なエッチング技術
US6836066B1 (en) Triode field emission display using carbon nanobtubes
JP3546606B2 (ja) 電界放出素子の製造方法
KR100805318B1 (ko) 탄소계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조 방법
JP3079097B1 (ja) 電界放射型電子源およびその製造方法
JP4218219B2 (ja) プラズマ成膜装置及び炭素膜の形成方法
RU2579777C1 (ru) Прибор на основе углеродосодержащих холодных катодов, расположенных на полупроводниковой подложке, и способ его изготовления
JP2000260300A (ja) 電子放出素子及びその製造方法
JP4312326B2 (ja) 電子放出装置
JP2000294118A (ja) 電子放出源の製造方法、電子放出源及び蛍光発光型表示器
US20040211973A1 (en) Silicon-based ultra-violet LED
JP2001076612A (ja) 電界電子放出装置