JP2005515584A5 - - Google Patents

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Publication number
JP2005515584A5
JP2005515584A5 JP2002586372A JP2002586372A JP2005515584A5 JP 2005515584 A5 JP2005515584 A5 JP 2005515584A5 JP 2002586372 A JP2002586372 A JP 2002586372A JP 2002586372 A JP2002586372 A JP 2002586372A JP 2005515584 A5 JP2005515584 A5 JP 2005515584A5
Authority
JP
Japan
Prior art keywords
emitter
layer
silicon
based dielectric
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002586372A
Other languages
English (en)
Japanese (ja)
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JP2005515584A (ja
Filing date
Publication date
Priority claimed from US09/846,047 external-priority patent/US6753544B2/en
Application filed filed Critical
Publication of JP2005515584A publication Critical patent/JP2005515584A/ja
Publication of JP2005515584A5 publication Critical patent/JP2005515584A5/ja
Withdrawn legal-status Critical Current

Links

JP2002586372A 2001-04-30 2002-04-16 シリコンベースの誘電体トンネル放出器 Withdrawn JP2005515584A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,047 US6753544B2 (en) 2001-04-30 2001-04-30 Silicon-based dielectric tunneling emitter
PCT/US2002/012258 WO2002089168A2 (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter

Publications (2)

Publication Number Publication Date
JP2005515584A JP2005515584A (ja) 2005-05-26
JP2005515584A5 true JP2005515584A5 (https=) 2007-02-01

Family

ID=25296794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586372A Withdrawn JP2005515584A (ja) 2001-04-30 2002-04-16 シリコンベースの誘電体トンネル放出器

Country Status (7)

Country Link
US (2) US6753544B2 (https=)
EP (1) EP1384243A2 (https=)
JP (1) JP2005515584A (https=)
KR (1) KR20040041546A (https=)
CN (1) CN1522454A (https=)
TW (1) TW548842B (https=)
WO (1) WO2002089168A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US7528539B2 (en) * 2004-06-08 2009-05-05 Ngk Insulators, Ltd. Electron emitter and method of fabricating electron emitter
US7429820B2 (en) * 2004-12-07 2008-09-30 Motorola, Inc. Field emission display with electron trajectory field shaping
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
KR101031269B1 (ko) * 2009-06-09 2011-04-29 삼성중공업 주식회사 선체진동 저감형 선박

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NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
GB2109159B (en) 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
DE3752249T2 (de) 1986-07-04 1999-07-08 Canon K.K., Tokio/Tokyo Elektronen emittierende Vorrichtung
EP0365630B1 (fr) 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
DE69033677T2 (de) 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
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JPH0512988A (ja) 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
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US5473218A (en) * 1994-05-31 1995-12-05 Motorola, Inc. Diamond cold cathode using patterned metal for electron emission control
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US5726524A (en) 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
JP3171785B2 (ja) * 1996-06-20 2001-06-04 富士通株式会社 薄型表示装置、及びそれに用いる電界放出陰極の製造方法
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US6084245A (en) * 1998-03-23 2000-07-04 The United States Of America As Represented By The Secretary Of The Navy Field emitter cell and array with vertical thin-film-edge emitter
US6011356A (en) 1998-04-30 2000-01-04 St. Clair Intellectual Property Consultants, Inc. Flat surface emitter for use in field emission display devices
US6137212A (en) 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
JP2000011859A (ja) 1998-06-22 2000-01-14 Yamaha Corp 電界放射型素子の製造方法
US6107732A (en) 1998-07-13 2000-08-22 Si Diamond Technology, Inc. Inhibiting edge emission for an addressable field emission thin film flat cathode display
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US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof

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