JP2005515584A - シリコンベースの誘電体トンネル放出器 - Google Patents

シリコンベースの誘電体トンネル放出器 Download PDF

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Publication number
JP2005515584A
JP2005515584A JP2002586372A JP2002586372A JP2005515584A JP 2005515584 A JP2005515584 A JP 2005515584A JP 2002586372 A JP2002586372 A JP 2002586372A JP 2002586372 A JP2002586372 A JP 2002586372A JP 2005515584 A JP2005515584 A JP 2005515584A
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JP
Japan
Prior art keywords
emitter
layer
silicon
based dielectric
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002586372A
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English (en)
Japanese (ja)
Other versions
JP2005515584A5 (https=
Inventor
チェン，ツィーツァン
バイス，マイケル，デイビッド
エンク，ロナルド，エル
リーガン，マイケル，ジェイ
ノヴェト，トーマス
ベニング，ポール，ジェイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2005515584A publication Critical patent/JP2005515584A/ja
Publication of JP2005515584A5 publication Critical patent/JP2005515584A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP2002586372A 2001-04-30 2002-04-16 シリコンベースの誘電体トンネル放出器 Withdrawn JP2005515584A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,047 US6753544B2 (en) 2001-04-30 2001-04-30 Silicon-based dielectric tunneling emitter
PCT/US2002/012258 WO2002089168A2 (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter

Publications (2)

Publication Number Publication Date
JP2005515584A true JP2005515584A (ja) 2005-05-26
JP2005515584A5 JP2005515584A5 (https=) 2007-02-01

Family

ID=25296794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586372A Withdrawn JP2005515584A (ja) 2001-04-30 2002-04-16 シリコンベースの誘電体トンネル放出器

Country Status (7)

Country Link
US (2) US6753544B2 (https=)
EP (1) EP1384243A2 (https=)
JP (1) JP2005515584A (https=)
KR (1) KR20040041546A (https=)
CN (1) CN1522454A (https=)
TW (1) TW548842B (https=)
WO (1) WO2002089168A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US7528539B2 (en) * 2004-06-08 2009-05-05 Ngk Insulators, Ltd. Electron emitter and method of fabricating electron emitter
US7429820B2 (en) * 2004-12-07 2008-09-30 Motorola, Inc. Field emission display with electron trajectory field shaping
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
KR101031269B1 (ko) * 2009-06-09 2011-04-29 삼성중공업 주식회사 선체진동 저감형 선박

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NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
GB2109159B (en) 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
DE3752249T2 (de) 1986-07-04 1999-07-08 Canon K.K., Tokio/Tokyo Elektronen emittierende Vorrichtung
EP0365630B1 (fr) 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
DE69033677T2 (de) 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
US5814832A (en) 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
JPH0512988A (ja) 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
EP0532019B1 (en) 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
US5473218A (en) * 1994-05-31 1995-12-05 Motorola, Inc. Diamond cold cathode using patterned metal for electron emission control
JP3532275B2 (ja) 1994-12-28 2004-05-31 ソニー株式会社 平面表示パネル
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
US5726524A (en) 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
JP3171785B2 (ja) * 1996-06-20 2001-06-04 富士通株式会社 薄型表示装置、及びそれに用いる電界放出陰極の製造方法
US5696385A (en) 1996-12-13 1997-12-09 Motorola Field emission device having reduced row-to-column leakage
JPH10308166A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6130503A (en) 1997-03-04 2000-10-10 Pioneer Electronic Corporation Electron emission device and display using the same
EP0896354A1 (en) 1997-08-08 1999-02-10 Pioneer Electronic Corporation Electron emission device and display device using the same
TW391022B (en) 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
US6034479A (en) * 1997-10-29 2000-03-07 Micron Technology, Inc. Single pixel tester for field emission displays
US6064149A (en) 1998-02-23 2000-05-16 Micron Technology Inc. Field emission device with silicon-containing adhesion layer
US6084245A (en) * 1998-03-23 2000-07-04 The United States Of America As Represented By The Secretary Of The Navy Field emitter cell and array with vertical thin-film-edge emitter
US6011356A (en) 1998-04-30 2000-01-04 St. Clair Intellectual Property Consultants, Inc. Flat surface emitter for use in field emission display devices
US6137212A (en) 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
JP2000011859A (ja) 1998-06-22 2000-01-14 Yamaha Corp 電界放射型素子の製造方法
US6107732A (en) 1998-07-13 2000-08-22 Si Diamond Technology, Inc. Inhibiting edge emission for an addressable field emission thin film flat cathode display
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
GB2346731B (en) 1999-02-12 2001-05-09 Toshiba Kk Electron emission film and filed emission cold cathode device
US6255185B1 (en) * 1999-05-19 2001-07-03 International Business Machines Corporation Two step anneal for controlling resistor tolerance
JP2001084762A (ja) 1999-09-16 2001-03-30 Matsushita Electric Ind Co Ltd 半導体メモリ装置
JP2001101977A (ja) 1999-09-30 2001-04-13 Toshiba Corp 真空マイクロ素子
JP3508652B2 (ja) 1999-10-18 2004-03-22 松下電工株式会社 電界放射型電子源およびその製造方法
JP2001118500A (ja) 1999-10-18 2001-04-27 Matsushita Electric Works Ltd 電界放射型電子源およびその製造方法
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof

Also Published As

Publication number Publication date
KR20040041546A (ko) 2004-05-17
US6753544B2 (en) 2004-06-22
WO2002089168A2 (en) 2002-11-07
CN1522454A (zh) 2004-08-18
TW548842B (en) 2003-08-21
US6902458B2 (en) 2005-06-07
US20020167021A1 (en) 2002-11-14
WO2002089168A3 (en) 2003-05-01
EP1384243A2 (en) 2004-01-28
US20040140748A1 (en) 2004-07-22

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