TW548842B - Emitter, integrated circuit, electronic device, and method for creating an emitter on an electron supply - Google Patents
Emitter, integrated circuit, electronic device, and method for creating an emitter on an electron supply Download PDFInfo
- Publication number
- TW548842B TW548842B TW091106747A TW91106747A TW548842B TW 548842 B TW548842 B TW 548842B TW 091106747 A TW091106747 A TW 091106747A TW 91106747 A TW91106747 A TW 91106747A TW 548842 B TW548842 B TW 548842B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- emitter
- patent application
- scope
- electron supply
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 18
- 230000005641 tunneling Effects 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910020776 SixNy Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 100
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- -1 group Chemical compound 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/846,047 US6753544B2 (en) | 2001-04-30 | 2001-04-30 | Silicon-based dielectric tunneling emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548842B true TW548842B (en) | 2003-08-21 |
Family
ID=25296794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091106747A TW548842B (en) | 2001-04-30 | 2002-04-03 | Emitter, integrated circuit, electronic device, and method for creating an emitter on an electron supply |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6753544B2 (https=) |
| EP (1) | EP1384243A2 (https=) |
| JP (1) | JP2005515584A (https=) |
| KR (1) | KR20040041546A (https=) |
| CN (1) | CN1522454A (https=) |
| TW (1) | TW548842B (https=) |
| WO (1) | WO2002089168A2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
| US6781146B2 (en) * | 2001-04-30 | 2004-08-24 | Hewlett-Packard Development Company, L.P. | Annealed tunneling emitter |
| US6558968B1 (en) * | 2001-10-31 | 2003-05-06 | Hewlett-Packard Development Company | Method of making an emitter with variable density photoresist layer |
| US6852554B2 (en) | 2002-02-27 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Emission layer formed by rapid thermal formation process |
| DE10330571B8 (de) * | 2003-07-07 | 2007-03-08 | Infineon Technologies Ag | Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür |
| US7528539B2 (en) * | 2004-06-08 | 2009-05-05 | Ngk Insulators, Ltd. | Electron emitter and method of fabricating electron emitter |
| US7429820B2 (en) * | 2004-12-07 | 2008-09-30 | Motorola, Inc. | Field emission display with electron trajectory field shaping |
| FR2899572B1 (fr) * | 2006-04-05 | 2008-09-05 | Commissariat Energie Atomique | Protection de cavites debouchant sur une face d'un element microstructure |
| KR101031269B1 (ko) * | 2009-06-09 | 2011-04-29 | 삼성중공업 주식회사 | 선체진동 저감형 선박 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL184589C (nl) | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
| GB2109159B (en) | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
| DE3752249T2 (de) | 1986-07-04 | 1999-07-08 | Canon K.K., Tokio/Tokyo | Elektronen emittierende Vorrichtung |
| EP0365630B1 (fr) | 1988-03-25 | 1994-03-02 | Thomson-Csf | Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs |
| DE69033677T2 (de) | 1989-09-04 | 2001-05-23 | Canon K.K., Tokio/Tokyo | Elektronenemissionselement- und Herstellungsverfahren desselben |
| US5814832A (en) | 1989-09-07 | 1998-09-29 | Canon Kabushiki Kaisha | Electron emitting semiconductor device |
| JPH0512988A (ja) | 1990-10-13 | 1993-01-22 | Canon Inc | 半導体電子放出素子 |
| EP0532019B1 (en) | 1991-09-13 | 1997-12-29 | Canon Kabushiki Kaisha | Semiconductor electron emission device |
| US5473218A (en) * | 1994-05-31 | 1995-12-05 | Motorola, Inc. | Diamond cold cathode using patterned metal for electron emission control |
| JP3532275B2 (ja) | 1994-12-28 | 2004-05-31 | ソニー株式会社 | 平面表示パネル |
| US5557596A (en) * | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| US5702281A (en) * | 1995-04-20 | 1997-12-30 | Industrial Technology Research Institute | Fabrication of two-part emitter for gated field emission device |
| US5726524A (en) | 1996-05-31 | 1998-03-10 | Minnesota Mining And Manufacturing Company | Field emission device having nanostructured emitters |
| JP3171785B2 (ja) * | 1996-06-20 | 2001-06-04 | 富士通株式会社 | 薄型表示装置、及びそれに用いる電界放出陰極の製造方法 |
| US5696385A (en) | 1996-12-13 | 1997-12-09 | Motorola | Field emission device having reduced row-to-column leakage |
| JPH10308166A (ja) * | 1997-03-04 | 1998-11-17 | Pioneer Electron Corp | 電子放出素子及びこれを用いた表示装置 |
| US6130503A (en) | 1997-03-04 | 2000-10-10 | Pioneer Electronic Corporation | Electron emission device and display using the same |
| EP0896354A1 (en) | 1997-08-08 | 1999-02-10 | Pioneer Electronic Corporation | Electron emission device and display device using the same |
| TW391022B (en) | 1997-10-29 | 2000-05-21 | Mitsubishi Rayon Co | Field emission electron source, method of producing the same, and use of the same |
| US6034479A (en) * | 1997-10-29 | 2000-03-07 | Micron Technology, Inc. | Single pixel tester for field emission displays |
| US6064149A (en) | 1998-02-23 | 2000-05-16 | Micron Technology Inc. | Field emission device with silicon-containing adhesion layer |
| US6084245A (en) * | 1998-03-23 | 2000-07-04 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter cell and array with vertical thin-film-edge emitter |
| US6011356A (en) | 1998-04-30 | 2000-01-04 | St. Clair Intellectual Property Consultants, Inc. | Flat surface emitter for use in field emission display devices |
| US6137212A (en) | 1998-05-26 | 2000-10-24 | The United States Of America As Represented By The Secretary Of The Army | Field emission flat panel display with improved spacer architecture |
| JP2000011859A (ja) | 1998-06-22 | 2000-01-14 | Yamaha Corp | 電界放射型素子の製造方法 |
| US6107732A (en) | 1998-07-13 | 2000-08-22 | Si Diamond Technology, Inc. | Inhibiting edge emission for an addressable field emission thin film flat cathode display |
| KR100338140B1 (ko) | 1998-09-25 | 2002-05-24 | 이마이 기요스케 | 전계 방사형 전자원 |
| US6181055B1 (en) | 1998-10-12 | 2001-01-30 | Extreme Devices, Inc. | Multilayer carbon-based field emission electron device for high current density applications |
| TW436837B (en) | 1998-11-16 | 2001-05-28 | Matsushita Electric Works Ltd | Field emission-type electron source and manufacturing method thereof and display using the electron source |
| GB2346731B (en) | 1999-02-12 | 2001-05-09 | Toshiba Kk | Electron emission film and filed emission cold cathode device |
| US6255185B1 (en) * | 1999-05-19 | 2001-07-03 | International Business Machines Corporation | Two step anneal for controlling resistor tolerance |
| JP2001084762A (ja) | 1999-09-16 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 半導体メモリ装置 |
| JP2001101977A (ja) | 1999-09-30 | 2001-04-13 | Toshiba Corp | 真空マイクロ素子 |
| JP3508652B2 (ja) | 1999-10-18 | 2004-03-22 | 松下電工株式会社 | 電界放射型電子源およびその製造方法 |
| JP2001118500A (ja) | 1999-10-18 | 2001-04-27 | Matsushita Electric Works Ltd | 電界放射型電子源およびその製造方法 |
| US6765342B1 (en) | 1999-10-18 | 2004-07-20 | Matsushita Electric Work, Ltd. | Field emission-type electron source and manufacturing method thereof |
-
2001
- 2001-04-30 US US09/846,047 patent/US6753544B2/en not_active Expired - Lifetime
-
2002
- 2002-04-03 TW TW091106747A patent/TW548842B/zh not_active IP Right Cessation
- 2002-04-16 EP EP02721776A patent/EP1384243A2/en not_active Withdrawn
- 2002-04-16 WO PCT/US2002/012258 patent/WO2002089168A2/en not_active Ceased
- 2002-04-16 CN CNA028133064A patent/CN1522454A/zh active Pending
- 2002-04-16 KR KR10-2003-7014147A patent/KR20040041546A/ko not_active Withdrawn
- 2002-04-16 JP JP2002586372A patent/JP2005515584A/ja not_active Withdrawn
-
2004
- 2004-01-12 US US10/755,890 patent/US6902458B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040041546A (ko) | 2004-05-17 |
| JP2005515584A (ja) | 2005-05-26 |
| US6753544B2 (en) | 2004-06-22 |
| WO2002089168A2 (en) | 2002-11-07 |
| CN1522454A (zh) | 2004-08-18 |
| US6902458B2 (en) | 2005-06-07 |
| US20020167021A1 (en) | 2002-11-14 |
| WO2002089168A3 (en) | 2003-05-01 |
| EP1384243A2 (en) | 2004-01-28 |
| US20040140748A1 (en) | 2004-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |