JP2005353740A - 半導体素子及び半導体装置 - Google Patents

半導体素子及び半導体装置 Download PDF

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Publication number
JP2005353740A
JP2005353740A JP2004171215A JP2004171215A JP2005353740A JP 2005353740 A JP2005353740 A JP 2005353740A JP 2004171215 A JP2004171215 A JP 2004171215A JP 2004171215 A JP2004171215 A JP 2004171215A JP 2005353740 A JP2005353740 A JP 2005353740A
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JP
Japan
Prior art keywords
semiconductor element
groove
adhesive
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2004171215A
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English (en)
Japanese (ja)
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JP2005353740A5 (enExample
Inventor
Tetsuo Nozu
哲郎 野津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004171215A priority Critical patent/JP2005353740A/ja
Priority to US10/975,385 priority patent/US7215013B2/en
Publication of JP2005353740A publication Critical patent/JP2005353740A/ja
Publication of JP2005353740A5 publication Critical patent/JP2005353740A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

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  • Dicing (AREA)
  • Die Bonding (AREA)
JP2004171215A 2004-06-09 2004-06-09 半導体素子及び半導体装置 Pending JP2005353740A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004171215A JP2005353740A (ja) 2004-06-09 2004-06-09 半導体素子及び半導体装置
US10/975,385 US7215013B2 (en) 2004-06-09 2004-10-29 Semiconductor device and semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004171215A JP2005353740A (ja) 2004-06-09 2004-06-09 半導体素子及び半導体装置

Publications (2)

Publication Number Publication Date
JP2005353740A true JP2005353740A (ja) 2005-12-22
JP2005353740A5 JP2005353740A5 (enExample) 2007-07-05

Family

ID=35459695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004171215A Pending JP2005353740A (ja) 2004-06-09 2004-06-09 半導体素子及び半導体装置

Country Status (2)

Country Link
US (1) US7215013B2 (enExample)
JP (1) JP2005353740A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007114126A (ja) * 2005-10-21 2007-05-10 Fujitsu Ltd 半導体装置及びその製造方法
JP2011187518A (ja) * 2010-03-05 2011-09-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
WO2021038712A1 (ja) * 2019-08-27 2021-03-04 三菱電機株式会社 半導体装置および半導体チップ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009028360B3 (de) * 2009-08-07 2010-12-09 Infineon Technologies Ag Verfahren zur Herstellung einer Schaltungsträgeranordnung und eines Leistungselektronikmoduls mit einer Verankerungsstruktur zur Herstellung einer temperaturwechselstabilen Lötverbindung
US8748750B2 (en) 2011-07-08 2014-06-10 Honeywell International Inc. Printed board assembly interface structures
FR2994769B1 (fr) * 2012-08-27 2015-07-17 Oberthur Technologies Circuit integre protege d'une attaque lumiere
CN108022845B (zh) * 2016-11-02 2020-06-26 中芯国际集成电路制造(上海)有限公司 芯片封装方法及封装结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177178A (ja) 1992-12-01 1994-06-24 Nissan Motor Co Ltd 半導体チップの構造
US6130478A (en) 1995-10-16 2000-10-10 Siemens N.V. Polymer stud grid array for microwave circuit arrangements
JP3526376B2 (ja) * 1996-08-21 2004-05-10 株式会社東芝 半導体装置及びその製造方法
WO1999012207A1 (en) * 1997-09-01 1999-03-11 Fanuc Ltd Method of joining small parts and assembly of small parts
WO2000072378A1 (de) 1999-05-20 2000-11-30 Siemens Aktiengesellschaft Substrat mit mindestens zwei metallisierten polymerhöckern für die lötverbindung mit einer verdrahtung
US6406636B1 (en) * 1999-06-02 2002-06-18 Megasense, Inc. Methods for wafer to wafer bonding using microstructures
DE10045249A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
US7001798B2 (en) * 2001-11-14 2006-02-21 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor device
JPWO2004085321A1 (ja) * 2003-03-25 2006-06-29 旭硝子株式会社 溝部を有するガラス基板及びその製造方法及びガラス基板作製用プレス型

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007114126A (ja) * 2005-10-21 2007-05-10 Fujitsu Ltd 半導体装置及びその製造方法
JP2011187518A (ja) * 2010-03-05 2011-09-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
WO2021038712A1 (ja) * 2019-08-27 2021-03-04 三菱電機株式会社 半導体装置および半導体チップ
JPWO2021038712A1 (enExample) * 2019-08-27 2021-03-04
KR20220006598A (ko) * 2019-08-27 2022-01-17 미쓰비시덴키 가부시키가이샤 반도체 장치
TWI760771B (zh) * 2019-08-27 2022-04-11 日商三菱電機股份有限公司 半導體裝置
JP7173361B2 (ja) 2019-08-27 2022-11-16 三菱電機株式会社 半導体装置
KR102556121B1 (ko) 2019-08-27 2023-07-14 미쓰비시덴키 가부시키가이샤 반도체 장치
US12113040B2 (en) 2019-08-27 2024-10-08 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
US20050275114A1 (en) 2005-12-15
US7215013B2 (en) 2007-05-08

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