JP2005318034A5 - - Google Patents

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Publication number
JP2005318034A5
JP2005318034A5 JP2004130710A JP2004130710A JP2005318034A5 JP 2005318034 A5 JP2005318034 A5 JP 2005318034A5 JP 2004130710 A JP2004130710 A JP 2004130710A JP 2004130710 A JP2004130710 A JP 2004130710A JP 2005318034 A5 JP2005318034 A5 JP 2005318034A5
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JP
Japan
Prior art keywords
clock signal
voltage
clock
semiconductor integrated
integrated circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004130710A
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English (en)
Japanese (ja)
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JP4565883B2 (ja
JP2005318034A (ja
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Application filed filed Critical
Priority to JP2004130710A priority Critical patent/JP4565883B2/ja
Priority claimed from JP2004130710A external-priority patent/JP4565883B2/ja
Priority to US11/115,132 priority patent/US7251162B2/en
Publication of JP2005318034A publication Critical patent/JP2005318034A/ja
Publication of JP2005318034A5 publication Critical patent/JP2005318034A5/ja
Priority to US11/819,288 priority patent/US7411831B2/en
Priority to US12/171,724 priority patent/US7652924B2/en
Application granted granted Critical
Publication of JP4565883B2 publication Critical patent/JP4565883B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004130710A 2004-04-27 2004-04-27 半導体集積回路装置 Expired - Fee Related JP4565883B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004130710A JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置
US11/115,132 US7251162B2 (en) 2004-04-27 2005-04-27 Nonvolatile memory with multi-frequency charge pump control
US11/819,288 US7411831B2 (en) 2004-04-27 2007-06-26 Disk processing apparatus with voltage generating circuit having a boost ratio control
US12/171,724 US7652924B2 (en) 2004-04-27 2008-07-11 Data processing circuit for contactless IC card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004130710A JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2005318034A JP2005318034A (ja) 2005-11-10
JP2005318034A5 true JP2005318034A5 (https=) 2007-06-21
JP4565883B2 JP4565883B2 (ja) 2010-10-20

Family

ID=35136232

Family Applications (1)

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JP2004130710A Expired - Fee Related JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置

Country Status (2)

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US (3) US7251162B2 (https=)
JP (1) JP4565883B2 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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US8391039B2 (en) * 2001-04-24 2013-03-05 Rambus Inc. Memory module with termination component
US6675272B2 (en) 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7301831B2 (en) 2004-09-15 2007-11-27 Rambus Inc. Memory systems with variable delays for write data signals
US20070070725A1 (en) 2005-09-29 2007-03-29 Hynix Semiconductor Inc. Internal voltage supplying device
KR101435966B1 (ko) * 2006-05-31 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 가진 ｉｃ 라벨, ｉｃ 태그, 및 ｉｃ 카드
KR100761371B1 (ko) 2006-06-29 2007-09-27 주식회사 하이닉스반도체 액티브 드라이버
JP2008052803A (ja) * 2006-08-23 2008-03-06 Toshiba Corp 不揮発性半導体記憶装置
KR100803363B1 (ko) 2006-11-13 2008-02-13 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로
KR100873617B1 (ko) 2007-04-12 2008-12-12 주식회사 하이닉스반도체 반도체 메모리 장치의 액티브 드라이버 제어 회로
JP4890369B2 (ja) * 2007-07-10 2012-03-07 エルピーダメモリ株式会社 デューティ検知回路及びこれを用いたｄｌｌ回路、半導体記憶装置、並びに、データ処理システム
KR100884605B1 (ko) 2007-09-17 2009-02-19 주식회사 하이닉스반도체 반도체 메모리 소자
KR100915816B1 (ko) 2007-10-04 2009-09-07 주식회사 하이닉스반도체 내부 전압 생성 회로
KR101003140B1 (ko) 2009-03-20 2010-12-21 주식회사 하이닉스반도체 내부 전원 발생 장치와 그의 제어 방법
US8773142B2 (en) * 2009-06-26 2014-07-08 Panasonic Corporation Electronic part and method of detecting faults therein
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
KR101097444B1 (ko) 2009-12-29 2011-12-23 주식회사 하이닉스반도체 내부전압 생성회로 및 내부전압 생성방법
JP5691615B2 (ja) * 2011-02-21 2015-04-01 ソニー株式会社 信号処理装置、信号処理方法、および受信装置
US8587363B2 (en) * 2012-01-20 2013-11-19 Samsung Electro-Mechanics Co., Ltd. High frequency switching circuit reducing power consumption and method of controlling the same
US9214859B2 (en) * 2012-04-30 2015-12-15 Macronix International Co., Ltd. Charge pump system
KR101950322B1 (ko) * 2012-12-11 2019-02-20 에스케이하이닉스 주식회사 전압 생성회로
US9490653B2 (en) 2013-07-23 2016-11-08 Qualcomm Incorporated Systems and methods for enabling a universal back-cover wireless charging solution
US9401622B2 (en) * 2013-07-23 2016-07-26 Qualcomm Incorporated Systems and methods for extending the power capability of a wireless charger
JP5905547B1 (ja) * 2014-09-05 2016-04-20 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9881654B2 (en) 2015-01-14 2018-01-30 Macronix International Co., Ltd. Power source for memory circuitry
US9536575B2 (en) 2015-01-14 2017-01-03 Macronix International Co., Ltd. Power source for memory circuitry
KR20170034578A (ko) * 2015-09-21 2017-03-29 에스케이하이닉스 주식회사 레귤레이터, 이를 포함하는 메모리 시스템 및 이의 동작 방법
US10283207B2 (en) 2016-06-03 2019-05-07 Samsung Electronics Co., Ltd. Non-volatile memory devices comprising high voltage generation circuits and operating methods thereof
CN113223568B (zh) * 2021-05-17 2022-04-22 杭州雄迈集成电路技术股份有限公司 一种锁存结构和锁存方法
TWI835671B (zh) * 2023-06-17 2024-03-11 瑞昱半導體股份有限公司 記憶體時脈控制電路和控制記憶體時脈的方法

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JP3497601B2 (ja) * 1995-04-17 2004-02-16 松下電器産業株式会社 半導体集積回路
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JP3566950B2 (ja) * 2002-02-20 2004-09-15 ローム株式会社 昇圧回路を備えた半導体装置
JP4007494B2 (ja) * 2002-05-29 2007-11-14 シャープ株式会社 昇圧装置
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置

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