TWI261843B - Voltage generator with reduced noise - Google Patents
Voltage generator with reduced noise Download PDFInfo
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- TWI261843B TWI261843B TW092133386A TW92133386A TWI261843B TW I261843 B TWI261843 B TW I261843B TW 092133386 A TW092133386 A TW 092133386A TW 92133386 A TW92133386 A TW 92133386A TW I261843 B TWI261843 B TW I261843B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
Abstract
Description
1261843 玖、發明說明: 【發明所屬之技術領域】 、人本發明廣泛係關於電壓產生器,鍾而言,本發明係關 "種、、、且怨成減低雜況之電荷抽取型電壓產生哭。 【先前技術】 在習知DRAMs中,會抽取電荷以產生料驅動字線及位 元線之驅動電壓’而不會損失臨限電壓。在〇議運作(例 如,字線驅動及位元線預充電)期間,會消耗大量能量,進 而使驅動電壓的位準變成較低位準。在此情況下,在習知 技術中會偵測驅動電壓的位準變成低於一目標位準的時間 點,以便抽取電荷並且維持該驅動電壓的位準。 圖1顯示習知電壓產生器的方塊圖。該習知電壓產生器包 括-偵測器1〇、-振堡器20、—控制驅動器3〇及一幫浦仙 。摄偵測益_測一驅動電壓Vpp的位準。該哭 來自糊器1〇的-輸出信號。該控制驅動器;應;: 遠振盈备2 0的一輸出信號。讀暫、由1Λ U及帛扁40抽取電荷以響應來自 該控制驅動器30的-輸出信號’以便輸出該驅動電壓Μ。 圖2a和圖2b顯示用以解說圖i所示之f知電壓產生㈣ 電路圖。該偵測器10劃分該驅動電屙1261843 玖, invention description: [Technical field to which the invention pertains], the invention is broadly related to a voltage generator, and in the case of a clock, the invention is related to the charge-extraction type voltage generation of the species cry. [Prior Art] In the conventional DRAMs, charges are extracted to generate a driving voltage of a material driving word line and a bit line without losing a threshold voltage. During the operation (for example, word line driving and bit line pre-charging), a large amount of energy is consumed, which in turn causes the level of the driving voltage to become a lower level. In this case, in the prior art, it is detected that the level of the driving voltage becomes a time point lower than a target level in order to extract the electric charge and maintain the level of the driving voltage. Figure 1 shows a block diagram of a conventional voltage generator. The conventional voltage generator includes a detector 1 -, a oscillating device 20, a control driver 3 〇, and a gangster. Photo detection _ Measure the level of a driving voltage Vpp. The cry comes from the pastor-output signal. The control driver; should;: an output signal of the far-reaching 20. The read charge is extracted by 1 Λ U and 帛 flat 40 in response to the -output signal ' from the control driver 30 to output the drive voltage Μ. 2a and 2b are diagrams for explaining the voltage generation (four) circuit shown in Fig. i. The detector 10 divides the driving power
Vpp以後得一偵測電壓Vpp has a detection voltage
Vpps。接著,該10比較該偵測電取 、、 ^土 VPPS與—參考電壓Vrc ,若該偵測電壓Vpps大於該參考電壓 兒土 Vrc則輸出一低位準 信號,反之亦然。該偵測電壓Vp係 ν ___Αϋ__χ, PPS係以下列万程式來表示: pps R, + R2 + R3 + R4 卯 如果來自该偵測备1 〇的輸出信號 马低位準信號,也就是 89019 1261843 d ’这偵測電壓Vpps小於該參考電壓νιχ 〜、Vpps. Then, the 10 compares the detection power, the VPPS and the reference voltage Vrc, and outputs a low level signal if the detection voltage Vpps is greater than the reference voltage Vrc, and vice versa. The detection voltage Vp is ν ___Αϋ__χ, and the PPS is expressed by the following tens of programs: pps R, + R2 + R3 + R4 卯 If the output signal from the detection device 1 is a low level signal, that is, 89019 1261843 d ' The detection voltage Vpps is smaller than the reference voltage νιχ 〜,
輪出一振盧信號。該控制驅動器川輸出控制信號Η、1叩 gi和g2,《響應來自該振mQ的該振4信號。S 該控制驅動器30之控制信號pl 2、 : “自 、、钟i 8 而得以控制 孩帛浦40輸出該驅動電壓Vpp。多個電容器c〖和c 、 甩’以響應II寺控制信號?1和p2。藉由響應該等控制 gl和g2而傳送該等電容器clfDC2中所儲存的電荷 大於一外部施加至電壓Vext的該驅動電壓Vpp。 圖3顯示用於解說習知電壓產生器之運作的時序圖。當啟 動字線或預先電位Tt線時,該驅動電壓Vpp的位準開始下降 。在時間…該偵測器i (H貞測到該驅重力電壓V p p的位準下: 到低於該目標位準。在時間t2 ’該幫浦4〇開始抽取電荷: 由於該幫浦4 0之電荷抽取作業,使得該驅動電壓v p p的位準 開始上升。在時間t3,該偵測器1〇偵測到該驅重力電壓^的 位準等於該目標位# ’並且命令該幫浦40停止抽取電荷。 然而,由於電路響應時間,導致該繫浦4〇之實際抽取電荷 作業係在時間14停止。 如上文所述,在習知電壓產生器中,介於該偵測器1〇實 際偵測到戎目標位準與該幫浦4〇開啟或停止運作之時間點 之間的時間差,會導致該驅動電壓Vpp的變動Δν卯變大, 進而導致不必要的耗電量。重點為,驅動電壓的變動會引 發使電源不穩定的雜訊。 【發明内容】 本發明的目標是,當驅動電壓Vpp到達一居先於一目標位 89019 1261843 準的預先決定位準時,依據一 DRAM之運作來抽取預先決 定之電荷量,以便減低該驅動電壓Vpp之變動。 在本發明一項具體實施例中,本發明提供一種電壓產生 器,包括:一偵測器,用於比較一輸出電壓與一第一參考 電壓和一低於該第一參考電壓之第二參考電壓,以輸出一 第一感測信號及一第二感測信號;一控制器,用於接收該 第一感測信號、該第二感測信號及一作用信號,以輸出一 第一控制信號及一第二控制信號;一副增壓器,用於增壓 一電壓以響應該第一控制信號;一主增壓器,用於增壓一 電壓以響應該第二控制信號;以及一電壓加法器,用於將 來自該副增壓器及該主增壓器的輸出信號相加,以提供該 輸出電壓。 【實施方式】 將參考附圖來詳細說明本發明。 圖4顯示根據本發明一項具體實施例之電壓產生器的方 塊圖。 在此項具體實施例中,所揭示之電壓產生器包括一偵測 器100、一控制器200、一主振盪器300、一副振盪器310、 一主控制驅動器400、一副控制驅動器4 1 0、一主幫浦500、 一副幫浦510及一電壓加法器600。該偵測器100具有兩個以 上偵測位準。在該驅動電壓Vpp通過一預偵測位準之後,且 在一驅動電壓Vpp到達一目標位準之前,當輸入一作用信號 ACT時,該控制器200輸出一控制信號。該主振盪器300及 該副振盪器3 10輸出多個振盪信號,以響應該控制器200輸 89019 1261843 出的琢技制信號。該主控制驅動器400及該副控制驅動器 4 10輸出插取控制信號,以響應該主振盪器3〇〇及該副振盪 态3 10輸出的該等振盪信號。該主幫浦$⑼及該副幫浦51〇輸 出拙取電壓’以響應該主控制驅動器400及該副控制驅動器 4 1 〇輸出的孩等抽取控制信號。該電壓加法器6〇〇將來自該 王幫浦500及該副幫浦5 1 〇的電壓相加,接著輸出該相加之 電壓以當做一驅動電壓。該驅動電壓被回授給該偵測器100。 由於冗憶體或電荷洩漏會消耗電荷,導致該驅動電壓Vpp 的k率下降。可藉由刺激來預測因一特殊作用所導致的電 荷消耗點及量值。 接下來的4明係以啟動字線或預充電位元線為實例。基 於此項實例之用途,假設字線啟動期間所消耗的電荷為Q1 (透過刺激獲得),以及假設蓄電器電容為C1。當啟動字線 時’驅動電壓νΡΡ的變動範圍變成Q1/C1。此外,如果電荷 消耗為Q2,則驅動電壓VPP的變動變成Q2/C1。據此,藉由 預先抽取及提供預先決定電荷量,就可減低驅動電壓Vpp 的波動。 為了防止該驅動電壓Vpp的位準上升太高而高於該目標 位準,會將一高於該目標位準的預先決定位準設定為一預 偵’/、彳位卞,並且只有當該驅動電壓Vpp的位準變成低於該預 ί、//、]位卞時才會預先抽取電荷。如果在該驅動電壓V叩位準 低方;居預偵測k準且尚於孩目標位準時輸入一作用命令, 則本發明揭示之電壓產生器會依據一既定作用命令來預先 考耳作用所舄的電荷。結果,在本發明揭示之電壓產生器 89019 1261843 中可減低該驅動電壓Vpp的波動。 的㊂貫際消耗的電荷量大於該預期量時,該驅動電取VppTurned out a ring of Lu signal. The control driver outputs control signals Η, 1叩 gi and g2, "responsive to the vibration 4 signal from the oscillator mQ. S The control signal pl 2 of the control driver 30: "self, clock i 8 is controlled to control the drive voltage Vpp. The plurality of capacitors c and c, 甩' in response to the II temple control signal? And p2. The charge stored in the capacitors clfDC2 is transmitted in response to the controls gl and g2 being greater than an externally applied voltage Vext to the voltage Vext. Figure 3 is shown for illustrating the operation of a conventional voltage generator Timing diagram. When the word line or the pre-potential Tt line is activated, the level of the driving voltage Vpp starts to decrease. At the time...the detector i (H贞 measures the level of the driving force voltage V pp : low to At the target level, at time t2 'the pump 4 〇 starts to draw the charge: due to the charge extraction operation of the pump 40, the level of the driving voltage vpp starts to rise. At time t3, the detector 1 〇 detecting that the level of the driving force voltage ^ is equal to the target bit # ' and instructing the pump 40 to stop extracting the charge. However, due to the circuit response time, the actual charge extraction operation of the system is at time 14 Stop. As mentioned above, in the study In the voltage generator, a time difference between the time when the detector 1 actually detects the target level and the time when the pump 4 is turned on or off, the fluctuation of the driving voltage Vpp is changed by Δν. Large, which in turn leads to unnecessary power consumption. The important point is that the fluctuation of the driving voltage causes noise that makes the power supply unstable. [Invention] The object of the present invention is that when the driving voltage Vpp reaches a target level before a target 89019 1261843 The predetermined amount of charge is extracted according to the operation of a DRAM in order to reduce the variation of the driving voltage Vpp. In a specific embodiment of the invention, the present invention provides a voltage generator, including a detector for comparing an output voltage with a first reference voltage and a second reference voltage lower than the first reference voltage to output a first sensing signal and a second sensing signal; a controller, configured to receive the first sensing signal, the second sensing signal, and an action signal to output a first control signal and a second control signal; a booster for increasing a voltage responsive to the first control signal; a primary booster for boosting a voltage in response to the second control signal; and a voltage adder for receiving the secondary booster and the primary boost The output signals of the devices are added to provide the output voltage.The present invention will be described in detail with reference to the accompanying drawings. Fig. 4 is a block diagram showing a voltage generator according to an embodiment of the present invention. In an embodiment, the disclosed voltage generator includes a detector 100, a controller 200, a main oscillator 300, a sub-oscillator 310, a main control driver 400, a sub-control driver 410, a main The pump 500, a pair of pump 510 and a voltage adder 600. The detector 100 has more than two detection levels. After the driving voltage Vpp passes a pre-detection level, and before a driving voltage Vpp reaches a target level, the controller 200 outputs a control signal when an action signal ACT is input. The main oscillator 300 and the sub-oscillator 3 10 output a plurality of oscillating signals in response to the controller 200 transmitting the 琢 technique signal of 89019 1261843. The main control driver 400 and the sub control driver 4 10 output an interpolation control signal responsive to the main oscillator 3 〇〇 and the oscillating signals output by the sub oscillating state 3 10 . The master pump $(9) and the slave pump 51〇 output the pull voltage ' in response to the master control driver 400 and the slave control driver 4 1 〇 output of the child extraction control signal. The voltage adder 6 相 adds the voltages from the king pump 500 and the sub pump 5 1 ,, and then outputs the added voltage as a driving voltage. The drive voltage is fed back to the detector 100. Since the memory or charge leakage consumes a charge, the k-rate of the driving voltage Vpp decreases. Stimulus can be used to predict the point and magnitude of charge consumption due to a particular effect. The next four lines are taken as examples of starting word lines or pre-charging bit lines. Based on the purpose of this example, assume that the charge consumed during the start of the word line is Q1 (obtained through stimulation) and that the capacitor capacitance is C1. When the word line is activated, the variation range of the driving voltage ν 变成 becomes Q1/C1. Further, if the charge consumption is Q2, the variation of the driving voltage VPP becomes Q2/C1. Accordingly, the fluctuation of the driving voltage Vpp can be reduced by extracting and supplying a predetermined amount of charge in advance. In order to prevent the level of the driving voltage Vpp from rising too high and above the target level, a predetermined level higher than the target level is set as a pre-detected '/, 彳 position, and only when The charge is pre-extracted when the level of the driving voltage Vpp becomes lower than the pre-pulse, //,] bit. If the driving voltage V叩 is low, and a pre-detection k is applied, and an action command is input when the target level is still applied, the voltage generator disclosed in the present invention pre-tests according to a predetermined action command. The charge of 舄. As a result, the fluctuation of the driving voltage Vpp can be reduced in the voltage generator 89019 1261843 disclosed in the present invention. When the amount of charge consumed by the three passes is greater than the expected amount, the drive takes Vpp
的位準會變成低於該目標位準。在此 ::VPP 之電壓產生器的抽取〇 “了 “明揭示 )抽取…式相同於習知電壓產生器的抽 …式。當實際消耗的電荷量小於該預期量時 :驅動,P的位準維持在高於該目標位準,並且〇_ 订正币作業。此外,由於只當該驅動電壓Vpp位 =測位準時才會開始抽取電荷作業,所以可藉由適當; 即该預偵測位準來防止因電荷抽取作業導致該 Vpp過度上升。 雖然本發明—項較佳具體實施例只使用兩個偵測位準, :偵測位準當做—預偵測位準且另—偵測位準當做標 位卞,但疋依冑其他較佳具體實施,列,可I偵測位準數量 增加到超過兩個偵測位準。 圖5顯示用於解說根據本發明之電壓產生器的時序圖。 當該偵測器1〇〇偵測到一預偵測位準detl及一目標位準 det2時(tl,t2),會啟動一預偵測位準信號detl—en及一目標 位準信號det2—en。如果啟動該預偵測位準信號心丨丨―,則 會在啟動該目標位準信號det2_en之前先輸入一作用信號 ACT,該控制器200啟動一副幫浦控制信號⑶。 當啟動一孫幫浦控制信號sub—pump—ei1^,該副振盪器31〇 、琢副控制驅動器410及該副幫浦5 1〇就會依序開始運作。 如果啟動该目標位準信號det2—en,則該主幫浦5〇〇會在一預 先決足響應時間之後開始運作。該作用信號ACT決定該副 89019 -10- 1261843 ^ 執行—抽取作業的總時間。此處,該副幫浦5 1 〇執 =抽取作業的時間週期會重疊於該主幫浦5 0 0的抽取作業 俨根據較佳具體貫施例,在主抽取作業期間可以 厭止W抽取作業。在時間t3,該偵測器100偵測到該驅動電 …恢復到該目標位準。在時間t4,該主幫浦500在 頂先決定響應時間之後停止抽取電荷。 顯示用讀說圖4所示之偵測器1〇〇的電路圖。該偵 丄口口、 〇 L括一偵測單元1 20、一第一比較器1 1 0及一第二比 、130邊偵測單兀120劃分該驅動電壓vpp以獲得兩個偵 :私土 pps丨和VPPS2。該第一比較器11〇比較該偵測電壓丨 入相對應於讀預偵測位準的電壓vrci。The level will become lower than the target level. Here, the extraction of the voltage generator of ::VPP is "expressed". The equation is the same as that of the conventional voltage generator. When the amount of charge actually consumed is less than the expected amount: drive, the level of P is maintained above the target level, and 〇_corrects the coin operation. In addition, since the charge operation is started only when the drive voltage Vpp = position is measured, the pre-detection level can be prevented to prevent the Vpp from rising excessively due to the charge extraction operation. Although the preferred embodiment of the present invention uses only two detection levels, the detection level is used as the pre-detection level and the other detection level is used as the standard position, but other preferred ones are preferred. Specifically, the number of I can be detected to increase the number of levels to more than two detection levels. Figure 5 shows a timing diagram for illustrating a voltage generator in accordance with the present invention. When the detector 1 detects a pre-detected level detl and a target level det2 (tl, t2), a pre-detected level signal detl-en and a target level signal det2 are activated. —en. If the pre-detection level signal is activated, an action signal ACT is input before the target level signal det2_en is activated, and the controller 200 activates a pair of control signals (3). When the grandchild control signal sub_pump_ei1^ is activated, the sub-oscillator 31〇, the sub-control driver 410 and the sub-switch 5 1〇 will start operating in sequence. If the target level signal det2-en is activated, the main pump 5 will start operating after a pre-required full response time. The action signal ACT determines the total time of the sub-89019 -10- 1261843 ^ execution-extraction operation. Here, the auxiliary pump 5 1 = = the time period of the extraction operation overlaps the extraction operation of the main pump 500. According to the preferred embodiment, the W extraction operation can be rejected during the main extraction operation. . At time t3, the detector 100 detects that the drive power is restored to the target level. At time t4, the main pump 500 stops extracting charge after determining the response time first. The circuit diagram of the detector 1 shown in FIG. 4 is read. The detection port, the 〇L includes a detecting unit 1 20, a first comparator 1 1 0 and a second ratio, and the 130 side detecting unit 120 divides the driving voltage vpp to obtain two detectives: Pps丨 and VPPS2. The first comparator 11 compares the detected voltage into a voltage vrci corresponding to the read pre-detected level.
Vpps2與一相對應於該 p p s 1和V p p s 2係以下列方 該第二比較器130比較該偵測電壓 目標位準的電壓V“2。該等偵測電壓V 程式來表示:Vpps2 corresponds to the p p s 1 and V p p s 2 in comparison with the second comparator 130 to compare the voltage V"2 of the detected voltage target level. The detection voltage V is expressed by:
V PPS\ V. PPS2V PPS\ V. PPS2
-xV 當該偵測電壓vppsl變成小-xV when the detection voltage vppsl becomes small
PP 電壓vrel時,該比較器丨1() 幸則出向位準仏號。當該偵測電壓v 時,該第二比較器130輸出-高位準信號 圖㈣示用以解說圖4所示之用於產生作时號ACT之 作用解碼器的方塊圖。 該作用解碼器包括一命令解碼器50、一記憶組控制哭60 及-位址緩衝器和位址解碼器70。該命令解碼器50接:及 pps2 成小於該電壓v 89019 -1!- 1261843 解碼一晶片選擇信號/CS、一列位址選通信號/ras、一行p 址選通信號/CAS及一寫啟用信號/WE,以輸出一相對庶命 令信號CMD。命令信號包括啟動、讀取、預充電及重新整 理信號。該位址緩衝器和位址解碼器70接收及解碼—位址 。該命令信號CMD及該位址緩衝器和位址解碼器的輸出 信號被輸入至該記憶組控制器60。該記憶組控制器6〇輸出 一作用信號ACT。該作用信號ACT包括各記憶組啟動、各 記憶組預充電、各記憶組讀取及各記憶組寫入。 圖6c和6d顯示用以解說圖4所示之控制器200的方塊圖。 圖6c所示之電路的用途為,在啟動該預偵測位準信號 detl—en之後以及啟動該目標位準信號det2—en之前,當輸入 该作用信號時,圖6c所示之電路會啟動一幫浦選擇信號 pmp_sel 〇 一「反及」閘NAND1針對該預偵測位準信號deti__en及一 藉由反轉該目標位準信號det2—en所獲得之信號來執行「反 及」(NAND)運算。一「反及」閘NAND2針對作用信號ACT 及一藉由反轉該「反及」閘NANDI之輸出信號所獲得之信 號來執行「反及」(NAND)運算。如果當該預偵測位準信號 detl—en為「鬲」位準且該目標位準信號det2 —⑶為「低」位 準時輸入該作用信號ACT,則會啟動該「反及」閘NAND2 的輸出信號。一鎖存器鎖存該「反及」閘NAND2的輸出信 號,接著將所鎖存之信號輸出為該幫浦選擇信號pmp_sel。 圖6d所示之電路的用途為輸出振盪器控制信號 sub—osc —el^osc—en,以響應該作用信號act及該幫浦選擇 89019 、 1261843 信號 pmp—sel。 在圖6d所示的較佳具體實施例中,由於該等振盪哭抑制 信號sub—osc—en和osc—en的邏輯位準互相相反’所以二二 振盪器31〇運作時,該主_3〇〇不會運作。然而了本 發明其他具體實施例中,讀φ挺湯哭 T 々王振盟态300和該副振盪器31〇 可同時運作。 將具有不同啟動時間的複數個脈衝輸入至一多工哭Μ# 。用於產生該等複數個脈衝之的每個組塊(組塊i、組:2、 …、組塊η)都包含一延遲電路211(例如,一反相器鏈卜該 延遲電路2Η的延遲時間被組態成依據該作用信號act而 有所不同由方、咸夕工态2 14會依據該作用信號ACT來選擇 並且輸出來自該等组塊(組塊1、組塊2、.··、組塊n)之多個 輸出信號之-’所以該振i器控制信號灿―⑶維持在一 作用中狀態的時間會該作用信號ACT而異。 由於只有當該振i器控制信號sub一處於作用中狀 悲時’该副振盛器310才會輸出該振盧信號,所以可依據該 作用信號ACT來碉節抽取的電荷量。 據此’在本發明揭示之電壓產生器中,藉由在主幫浦運 作炙刖先運作副幫浦,可防止該驅動電壓V卯的位準過度波 動。結果,可減低會導致驅動電壓波動的雜訊。此外,因 為Ik時驅動见壓’笑化遞減使得所要抽取的電荷量遞減,所 以使該驅動電壓Vpp維持在該目標位準以上所需的電力得 以減低。 雖然本發明可有各種修改及替代形式,但是會藉由圖式 89019 -13 - 1261843 中的實例來顯示本發明的特定具體實施例,並且會在本文 中羊、,田乂月’然而,應明白,本發明不限於所揭示的特定 开y式。而疋,本發明涵蓋所有修改、同等物及替代方案, 並且白屬万;如卩退附_凊專利範圍所定義的本發明精神及範 轉内。 【圖式簡單說明】 :::項具體貫施例而論來解說本發明的非限制性講授 以§兄明本發明。還會參考附圖。 圖1顯示習知電壓產生器的方_。 =和圖2:顯示用以解說習知電壓產生器的電路圖。 員不“口電壓產生器的時序圖。 塊圖。根據本發明-項具體實施例之電壓產生器的方 生㈣㈣本發明—項具时施例之電壓產 :二::m4所示之偵測器的電路圖。 作用解碼器的方塊圖兄。θ 4所不〈用於產生作用信號ACT之 圖6c^顯示用以解說圖4所示之控制器的方塊圖。 89019 -14- 1261843 【圖式代表符號說明】 10 偵測器 210 組塊 20 振盪器 211 延遲電路 30 控制驅動器 212 1反及」(Nand)間 40 幫浦 213 「反及」(Nand)閘 50 命令解碼器 214 多工器 60 記憶組控制器 300 主振盪器 70 位址緩衝器和解碼器 310 副振盪器 100 偵測器 400 主控制器 110 第一比較器 410 副控制器 120 偵測單元 500 主幫浦 130 第二比較器 510 副幫浦 200 控制器 600 電壓加法器 89019 , 15When the PP voltage is vrel, the comparator 丨1() is fortunately out of the alignment apostrophe. When the voltage v is detected, the second comparator 130 outputs a high level signal. (4) is a block diagram showing the effect decoder for generating the time number ACT shown in FIG. The active decoder includes a command decoder 50, a memory bank control cry 60 and an address buffer and an address decoder 70. The command decoder 50 is connected to: and pps2 is smaller than the voltage v 89019 -1! - 1261843 to decode a chip select signal /CS, a column address strobe signal /ras, a row of address strobe signal /CAS and a write enable signal /WE to output a relative command signal CMD. Command signals include start, read, precharge, and reconfigure signals. The address buffer and address decoder 70 receives and decodes the address. The command signal CMD and the output signals of the address buffer and the address decoder are input to the memory bank controller 60. The memory bank controller 6 outputs an action signal ACT. The action signal ACT includes activation of each memory group, pre-charging of each memory group, reading of each memory group, and writing of each memory group. Figures 6c and 6d show block diagrams for illustrating the controller 200 shown in Figure 4. The circuit shown in FIG. 6c is used to activate the circuit shown in FIG. 6c when the pre-detection level signal detl_en is activated and before the target level signal det2-en is activated. A pump select signal pmp_sel 「 "reverse" gate NAND1 performs "reverse" (NAND) for the pre-detected level signal deti__en and a signal obtained by inverting the target level signal det2-en Operation. A "reverse" gate NAND2 performs a "reverse" (NAND) operation on the action signal ACT and a signal obtained by inverting the output signal of the "reverse" gate NANDI. If the action signal ACT is input when the pre-detection level signal detl_en is "鬲" level and the target level signal det2 - (3) is "low" level, the "reverse" gate NAND2 is activated. output signal. A latch latches the output signal of the "reverse" gate NAND2, and then outputs the latched signal as the pump selection signal pmp_sel. The purpose of the circuit shown in Figure 6d is to output an oscillator control signal sub_osc_el^osc-en in response to the active signal act and the pump selecting 89019, 1261843 signal pmp-sel. In the preferred embodiment shown in FIG. 6d, since the logical levels of the oscillating suppression signals sub_osc_en and osc-en are opposite to each other, the main _3 is operated when the second oscillator 31 〇 operates. 〇〇 will not work. However, in other specific embodiments of the present invention, reading the φTangtang crying T 々 Wang Zhen quo state 300 and the sub-oscillator 31 〇 can operate simultaneously. Input a plurality of pulses with different startup times to a multiplexed crying #. Each of the chunks (chunk i, group: 2, ..., chunk n) used to generate the plurality of pulses includes a delay circuit 211 (eg, an inverter chain delay of the delay circuit 2Η) The time is configured to be different according to the action signal act, and the salty state 2 is selected according to the action signal ACT and outputted from the blocks (block 1, block 2, . . . , the plurality of output signals of the block n) - 'so that the vibration control signal - (3) maintains the time in an active state, the action signal ACT varies. Since only the vibration control signal sub The sub-vibrator 310 outputs the ring signal when it is in the middle of the action, so the amount of charge extracted can be throttled according to the action signal ACT. Accordingly, in the voltage generator disclosed in the present invention, In the operation of the main pump, the auxiliary pump is operated to prevent the level of the driving voltage V卯 from excessively fluctuating. As a result, the noise that causes the driving voltage to fluctuate can be reduced. In addition, since Ik is driven to see the pressure 'smile Decrease so that the amount of charge to be extracted is decremented, so the drive is made The power required to maintain the voltage Vpp above the target level is reduced. Although the invention is susceptible to various modifications and alternatives, specific embodiments of the invention are shown by way of example in the formula 89019 - 13 - 1261843 And the present invention is not limited to the specific open y formula disclosed. However, the present invention covers all modifications, equivalents and alternatives, and is a genus; The spirit and scope of the present invention as defined by the scope of the patents is hereinafter referred to in the scope of the patents. [Simplified Description of the Drawings] ::: The non-limiting teachings of the present invention are specifically described by way of example. Reference will also be made to the accompanying drawings. Figure 1 shows a conventional voltage generator _. = and Figure 2: shows a circuit diagram for explaining a conventional voltage generator. A timing diagram of a port voltage generator. The method of the voltage generator according to the embodiment of the present invention (4) (4) The present invention - the voltage product of the embodiment: the circuit diagram of the detector shown by m:: m4. The block diagram of the acting decoder. 4 are not used to generate a letter of action Figure 6c of the ACT shows a block diagram for explaining the controller shown in Figure 4. 89019 -14- 1261843 [Description of Symbols] 10 Detector 210 Block 20 Oscillator 211 Delay Circuit 30 Control Driver 212 1 In contrast, (Nand) 40 pump 213 "Nand" gate 50 command decoder 214 multiplexer 60 memory group controller 300 main oscillator 70 address buffer and decoder 310 sub oscillator 100 detect Detector 400 main controller 110 first comparator 410 sub-controller 120 detection unit 500 main pump 130 second comparator 510 sub-pull 200 controller 600 voltage adder 89019, 15
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JP (1) | JP4393163B2 (en) |
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FR2843207B1 (en) * | 2002-07-30 | 2005-03-04 | Centre Nat Rech Scient | VOLTAGE / VOLTAGE CONVERTER WITH INTEGRATED CIRCUITS. |
KR100680441B1 (en) * | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | VPP voltage generator for generating stable VPP voltage |
US7710193B2 (en) * | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
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KR100763355B1 (en) * | 2006-03-22 | 2007-10-04 | 삼성전자주식회사 | Vpp generating circuit for generating vpp in stable level under wide range vcc and semiconductor memory device having the same |
US20080122413A1 (en) * | 2006-06-12 | 2008-05-29 | Boon-Aik Ang | Method and apparatus for versatile high voltage level detection with relative noise immunity |
KR100762241B1 (en) * | 2006-06-30 | 2007-10-01 | 주식회사 하이닉스반도체 | Voltage up generation device of semiconductor memory device and method for controlling thereof |
KR100795026B1 (en) * | 2006-12-22 | 2008-01-16 | 주식회사 하이닉스반도체 | Apparatus and method for generating internal voltage in semiconductor integrated circuit |
KR20080100539A (en) * | 2007-05-14 | 2008-11-19 | 주식회사 하이닉스반도체 | Internal voltage generator and method for generating in semiconductor device |
KR100915816B1 (en) * | 2007-10-04 | 2009-09-07 | 주식회사 하이닉스반도체 | Internal Voltage Generating Circuit |
US8031550B2 (en) * | 2008-06-03 | 2011-10-04 | Elite Semiconductor Memory Technology Inc. | Voltage regulator circuit for a memory circuit |
US9337724B2 (en) * | 2013-11-19 | 2016-05-10 | Globalfoundries Inc. | Load sensing voltage charge pump system |
KR20160074253A (en) * | 2014-12-18 | 2016-06-28 | 에스케이하이닉스 주식회사 | Low Voltage Detection Circuit, Non-volatile Memory Apparatus Having the Same and Operation Method Thereof |
JP2016149858A (en) * | 2015-02-12 | 2016-08-18 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
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TW200418042A (en) | 2004-09-16 |
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