KR100761372B1 - Oscillation circuit of vpp generator - Google Patents

Abstract

An oscillation circuit of a boosting voltage generator is provided to estimate proper usage of voltage boosting pumps according to the type and the size of a device through a test mode disabling the driving of the voltage boosting pumps. In a boosting voltage generator(100) comprising one voltage boosting pump(160) in one bank to generate a boosting voltage, a pump control signal oscillation unit oscillates a pump control signal controlling the driving of the voltage boosting pump in response to an oscillation control signal. A test operation unit disables the oscillation control signal in response to an oscillation test signal in a test mode. A normal operation unit enables or disables the oscillation control signal in response to a pump enable signal and a bank operation signal in a normal mode.

Description

Oscillation circuit of boosted voltage generator {OSCILLATION CIRCUIT OF VPP GENERATOR}

1 is a block diagram illustrating an example of a boosted voltage generator according to the prior art.

2 is a block diagram illustrating this example of a boosted voltage generator according to the prior art;

3 is a circuit diagram showing in detail a boosted voltage oscillator of an example of a boosted voltage generator according to the prior art shown in FIG.

4 is a circuit diagram showing in detail a boosted voltage oscillator in this example of a boosted voltage generator according to the prior art shown in FIG.

5 is a block diagram illustrating a boosted voltage generator according to an embodiment of the present invention.

6 is a circuit diagram illustrating in detail a boosted voltage oscillator among components of a boosted voltage generator according to an embodiment of the present invention shown in FIG.

7 is a block diagram illustrating a boost voltage generator according to another embodiment of the present invention.

8 is a circuit diagram illustrating in detail a boosted voltage oscillator among components of a boosted voltage generator according to another embodiment of the present invention shown in FIG.

* Explanation of symbols for main parts of the drawings

100, 200: step-up voltage generator.

120, 220: Step-up voltage detector.

140, 240: boosted voltage oscillator.

160, 262, 264 step-up voltage pump.

260: pumping part.

The present invention relates to an oscillating circuit of a boosted voltage generator, and more particularly to an oscillating circuit of a boosted voltage generator capable of testing an appropriate amount of boosted voltage pump with respect to the size of a memory element.

Due to the extremely high speed, high density, and low power consumption of semiconductor memory devices, internal voltages have been used in DRAMs. In order to generate the internal voltage, a reference potential is generated, and the generated reference potential is used by charge pumping or down converting.

Typical internal voltages using charge pumping include boost voltage VPP and back bias voltage VBB. In addition, a representative internal voltage using down converting is a core voltage VCORE.

In general, the boosted voltage VPP is applied to a potential higher than the external power voltage VDD so that there is no loss of cell data at the gate (or word line) of the cell transistor to access the cell. Make.

In addition, the back bias voltage VBB is made to apply a potential lower than the external ground voltage VSS to the bulk of the cell transistor in order to prevent loss of data stored in the cell.

In addition, the core voltage VCORE is down converted from the external power supply voltage VDD to reduce power loss and stabilize the operation of the core. The core voltage VCORE is lower than the external power supply voltage VDD. It is made by using an op-amp to maintain a constant potential against the fluctuation of.

Here, the boosted voltage VPP is supplied to all cell transistor regions of the semiconductor device, and thus a large amount of the word line is supplied at one time as the word line floats. Therefore, the potential level of the boosted voltage VPP may be lowered instantaneously than the target level (the ideal potential level of the boosted voltage VPP). When the potential level of the boosted voltage VPP is momentarily lower than the target level, the potential level of the boosted voltage VPP must be raised again. The method is as follows.

1 is a block diagram illustrating an example of a boosted voltage generator according to the prior art.

2 is a block diagram showing this example of a boosted voltage generator according to the prior art.

1 and 2, a process of generating a boosted voltage VPP is known.

First, the boosted voltage detector 10 receives the boosted voltage VPP fed back from the boosted voltage pump 30 and outputs a pumping activation signal PPE_ACT for controlling the driving of the boosted voltage oscillator 20.

That is, when the potential level of the boosted voltage VPP is lower than the target level, the pumping activation signal PPE_ACT is activated to drive the boosted voltage oscillator 20.

Second, the boosted voltage oscillator 20 according to the example of the boosted voltage generator controls the driving of the boosted voltage pump 30 in response to the pumping activation signal PPE_ACT and the bank operation signals ACT0, ACT1, ..., ACTN. The pump control signals (VPPOSC0, VPPOSC1, ..., VPPOSCN) are oscillated.

Similarly, the boosted voltage oscillator 20 according to this example of the boosted voltage generator also controls the driving of the boosted voltage pump 30 in response to the pumping activation signal PPE_ACT and the bank operation signals ACT0, ACT1, ..., ACTN. The pump control signals VPPOSC0_1, VPPOSC0_2, VPPOSC1_1, ..., VPPOSC1_2, VPPOSCN_1 and VPPOSCN_2 are oscillated.

Here, the pump control signals (VPPOSC0, VPPOSC1, ..., VPPOSCN) according to the example of the boost voltage generator and the pump control signals (VPPOSC0_1, VPPOSC0_2, VPPOSC1_1, ..., VPPOSC1_2, VPPOSCN_1, VPPOSCN_1) according to this example of the boost voltage generator. The reason for the difference is as follows.

In one example of the booster voltage generator, one booster voltage pump 30 is connected to one bank to pump the booster voltage VPP. In this example of the booster voltage generator, two booster voltage pumps 30 of one bank are used. Is connected to pump the boosted voltage VPP. That is, the number of boost voltage pumps 30 is adjustable according to the device in which the boost voltage generator is used.

The bank operation signals ACT0, ACT1, ..., ACTN are activated in response to a memory bank operating among the plurality of memory banks.

That is, only the boost voltage pump 30 connected to the memory bank which operates even when the pumping activation signal PPE_ACT is activated is driven.

Third, the boosted voltage pump 30 responds to the pump control signals VPPOSC0, VPPOSC1, ..., VPPOSCN or the pump control signals VPPOSC0_1, VPPOSC0_2, VPPOSC1_1, ..., VPPOSC1_2, VPPOSCN_1, VPPOSCN_2, and the potential of the boosted voltage VPP. Print the level up.

3 is a circuit diagram illustrating in detail a boosted voltage oscillator of an example of a boosted voltage generator according to the related art shown in FIG. 1.

4 is a circuit diagram showing in detail a boosted voltage oscillator in this example of a boosted voltage generator according to the prior art shown in FIG.

Referring to FIG. 3, it can be seen that, in one example of the boost voltage generator according to the related art, the boost voltage oscillator oscillates one pump control signal VPPOSC0 in response to the pumping activation signal PPE_ACT and the bank operation signal ACT0. Can be.

Similarly, referring to FIG. 4, in this example of the boost voltage generator according to the related art, the boost voltage oscillator outputs two pump control signals VPPOSC0_1 and VPPOSC0_2 in response to the pumping activation signal PPE_ACT and the bank operation signal ACT0. It can be seen that it is oscillating.

Among the components of the booster voltage generator, the booster voltage pump 30 serves to raise the potential level of the actual booster voltage VPP. The booster voltage pump 30 has a size, a number, and a position of the booster voltage pump 30. Is determined based on the base circuit of a device using a boosted voltage generator.

However, after the actual product is produced, it is difficult to determine whether or not the amount of the booster voltage pump 30 that is determined by ratifying the base circuit is appropriate. If the size of the boosted voltage pump 30 is too large and the amount of the boosted voltage VPP is excessive, a problem of increasing the current consumption of the produced product occurs.

The present invention has been proposed to solve the above problems of the prior art, and an object thereof is to provide a boost voltage generator capable of testing an appropriate amount of boost voltage pump for a size of a memory device.

According to an aspect of the present invention for achieving the above technical problem, in a boost voltage generator having one boost voltage pump in one bank to generate a boost voltage, the boost voltage pump in response to an oscillation control signal; Pump control signal oscillating means for oscillating a pump control signal for controlling driving; Test operation means for controlling deactivation of the oscillation control signal in response to an oscillation test signal in a test mode; Provided is an oscillation circuit of a boosted voltage generator including normal operation means for controlling activation or deactivation of the oscillation control signal in response to a bank operation signal and a pumping activation signal in a normal mode.

According to another aspect of the present invention for achieving the above technical problem, in the boost voltage generator having a first boost voltage pump and a second boost voltage pump in one bank to generate a boost voltage, the bank operation signal and Oscillation control signal control means for controlling activation or deactivation of the oscillation control signal in response to the pumping activation signal; Pump control signal oscillating means for oscillating a first pump control signal for controlling the driving of the first boosted voltage pump and a second pump control signal for controlling the driving of the second boosted voltage pump in response to the oscillation control signal; First test operation means for controlling deactivation of the first pump control signal in response to a first pumping test signal in a test mode; And second test operation means for controlling deactivation of the second pump control signal in response to a second pumping test signal in a test mode.

According to another aspect of the present invention for achieving the above technical problem, step-up voltage detection means for detecting the potential level of the boosted voltage, and determines and outputs the logic level of the pumping activation signal according to the detection result; A plurality of booster voltage pumps for boosting the booster voltage in response to the plurality of pump control signals and supplying the booster voltage in a one-to-one symmetry with the memory bank; And oscillating the pump control signal in response to the pumping activation signal and the plurality of bank operation signals in a normal mode, and outputting a predetermined number of signals from the plurality of pump control signals in response to the oscillation test signal in a test mode. A boosted voltage generator is provided that includes a plurality of boosted voltage oscillating means that do not oscillate.

According to another aspect of the present invention for achieving the above technical problem, step-up voltage detection means for detecting the potential level of the boost voltage, and determines and outputs the logic level of the pumping activation signal according to the detection result; A first boosting voltage pump that supplies a boosted voltage symmetrically with the plurality of memory banks one-to-one, and pumps the boosted voltage in response to the first pump control signal, and a second boosting voltage in response to the second pump control signal A plurality of pumping means having a boosted voltage pump; Controlling the oscillation of the first pump control signal and the second pump control signal in response to the pumping activation signal and the plurality of bank operation signals in a normal mode, and the plurality of second signals in response to the first pumping test signal in a test mode. Step-up including a plurality of boost voltage oscillation means that does not oscillate a predetermined number of signals in one pump control signal and does not oscillate a certain number of signals in the plurality of second pump control signals in response to a second pumping test signal. A voltage generator is provided.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention. However, the present invention is not limited to the embodiments disclosed below, but may be configured in various different forms, only this embodiment to complete the disclosure of the present invention and to those skilled in the art to complete the present invention. It is provided to inform you.

5 is a block diagram illustrating a boosted voltage generator according to an exemplary embodiment of the present invention.

Referring to FIG. 5, the boosted voltage generator 100 according to an embodiment of the present invention detects a potential level of the boosted voltage VPP, determines a logic level of the pumping activation signal PPE_ACT according to a detection result, and outputs the detected logic level. The boosted voltage detector 120 and the boosted voltage VPP are pumped in response to the plurality of pump control signals VPPOSC0, VPPOSC1,..., And VPPOSCN, and the boosted voltage VPP is supplied symmetrically in a one-to-one manner with the memory bank. The pump control signals VPPOSC0, VPPOSC1,..., And VPPOSCN in response to the pumping activation signals PPE_ACT and the plurality of bank operation signals ACT0, ACT1,..., ACTN in the normal mode. Control the oscillation, and do not oscillate a certain number of signals among the plurality of pump control signals VPPOSC0, VPPOSC1, ..., VPPOSCN in response to the oscillation test signals TM_PUMOFF0, TM_PUMOFF1, ..., TM_PUMOFFN in the test mode. Four boosted voltage oscillators 140 The.

The difference between the boosted voltage generator according to the embodiment of the present invention shown in FIG. 5 and the boosted voltage generator according to the related art shown in FIG. 1 is as follows.

In the boosted voltage generator shown in FIG. 1, when the potential level of the boosted voltage VPP falls below the target level, the boosted voltage pump 30 connected to the operating bank among the plurality of memory banks operates unconditionally. ) Was not used excessively.

On the other hand, the boosted voltage generator 100 according to the embodiment of the present invention shown in FIG. 5 divides the operation mode into a normal mode and a test mode, and operates in the same manner as in the conventional mode, but in the test mode, the MRS (Mode Register) In response to the test signals TM_PUMOFF0, TM_PUMOFF1, ..., TM_PUMOFFN set in advance from the set, only a certain number of step-up voltage pumps 160 can be driven. That is, it is possible to adjust the number of boost voltage pumps 160 driven according to the activated signal among the plurality of test signals TM_PUMOFF0, TM_PUMOFF1, ..., TM_PUMOFFN.

6 is a circuit diagram illustrating in detail a boosted voltage oscillator among components of a boosted voltage generator according to an exemplary embodiment of the present invention shown in FIG. 5.

Referring to FIG. 6, among the components of the boost voltage generator 100 according to the embodiment of the present invention, the boost voltage oscillator 140 may include one boost voltage pump (1) in one bank to generate a boost voltage VPP. In the boosted voltage generator 100 including the pump control signal oscillator 142 for oscillating the pump control signal VPPOSC0 for controlling the driving of the boosted voltage pump 160 in response to the oscillation control signal VPP_ACT. The test operation unit 144 controls to deactivate the oscillation control signal VPP_ACT in response to the oscillation test signal TM_PUMPOFF0 in the test mode, and the bank operation signal ACT0 and the pumping activation signal PPE_ACT in the normal mode. And a normal operation unit 146 which controls to activate or deactivate the oscillation control signal VPP_ACT in response.

Here, the normal operation unit 146 activates the oscillation control signal VPP_ACT when both the bank operation signal ACT0 and the pumping activation signal PPE_ACT are activated in the normal mode.

In addition, the normal operation unit 146 may input the bank operation signal ACT0 as one input, the pumping activation signal PPE_ACT as this input, and the first NAND for receiving and outputting the output signal of the test operation unit 144 as three inputs. The gate NAND1 and the first inverter INV1 for receiving the output signal of the first NAND gate NAND1 and outputting the oscillation control signal VPP_ACT are provided.

The test operation unit 144 deactivates the oscillation control signal VPP_ACT when the oscillation test signal TM_PUMPOFF0 is activated in the test mode.

In addition, the test operation unit 144 includes a second inverter INV2 that receives the oscillation test signal TM_PUMPOFF0 and outputs it, and outputs an output signal of the second inverter INV2 to the first NAND gate NAND1. By inputting three inputs, the oscillation control signal VPP_ACT is deactivated.

7 is a block diagram illustrating a boosted voltage generator according to another exemplary embodiment of the present invention.

Referring to FIG. 7, the boosted voltage generator 200 according to an exemplary embodiment of the present invention detects the potential level of the boosted voltage VPP, determines the logic level of the pumping activation signal PPE_ACT according to the detection result, and outputs the logic level. The boosted voltage detector 220 and the plurality of memory banks are symmetrically provided one-to-one to supply the boosted voltage VPP, and pump the boosted voltage in response to the first pump control signals VPPOSC0_1, VPPOSC1_1,..., And VPPOSCN_1. A plurality of pumping units (e) having a first boosted voltage pump 262 and a second boosted voltage pump 264 pumping the boosted voltage VPP in response to the second pump control signals VPPOSC0_2, VPPOSC1_2,..., VPPOSCN_2. 260) and the first pump control signals VPPOSC0_1, VPPOSC1_1,..., VPPOSCN_1 and the second pump control in response to the pumping activation signal PPE_ACT and the plurality of bank operation signals ACT0, ACT1,..., ACTN in the normal mode. Control the oscillation of the signals VPPOSC0_2, VPPOSC1_2, ..., VPPOSCN_2 In response to the first pumping test signals TM_PUMPOSC0_1, TM_PUMPOSC1_1, ..., TM_PUMPOSCN_1, the oscillator does not oscillate a predetermined number of signals among the plurality of first pump control signals VPPOSC0_1, VPPOSC1_1, ..., VPPOSCN_1, and the second pumping test signal And a plurality of boosted voltage oscillators 240 which do not oscillate a certain number of signals among the plurality of second pump control signals VPPOSC0_2, VPPOSC1_2,..., And VPPOSCN_2 in response to TM_PUMPOSC0_2, TM_PUMPOSC1_2,..., And TM_PUMPOSCN_2.

The difference between the boosted voltage generator according to another embodiment of the present invention shown in FIG. 7 and the boosted voltage generator according to the related art shown in FIG. 2 is as follows.

In the boosted voltage generator shown in FIG. 2, when the potential level of the boosted voltage VPP falls below the target level, the boosted voltage pump 30 connected to the operating bank among the plurality of memory banks operates unconditionally. ) Was not used excessively.

On the other hand, the boosted voltage generator 200 according to another embodiment of the present invention shown in FIG. 7 divides the operation mode into a normal mode and a test mode, and operates in the same manner as in the conventional mode, but in the test mode, MRS (Mode Only a predetermined number of pumping units 260 are driven in response to the first pumping test signals TM_PUMPOSC0_1, TM_PUMPOSC1_1, ..., TM_PUMPOSCN_1 and the second pumping test signals TM_PUMPOSC0_2, TM_PUMPOSC1_2, ..., TM_PUMPOSCN_2 preset from the register set It is a structure that can be. That is, the number of pumping units 260 driven according to signals activated among the plurality of first pumping test signals TM_PUMPOSC0_1, TM_PUMPOSC1_1,..., TM_PUMPOSCN_1 and the second pumping test signals TM_PUMPOSC0_2, TM_PUMPOSC1_2,..., TM_PUMPOSCN_2. It is possible to adjust.

In addition, the difference between the boosted voltage generator 100 according to the embodiment of the present invention shown in FIG. 5 and the boosted voltage generator 200 according to another embodiment of the present invention shown in FIG. 7 is as follows.

In the boost voltage generator 100 shown in FIG. 5, one boost voltage pump 160 is connected to each memory bank among a plurality of memory banks. That is, even when the memory bank is in operation, the boosted voltage pump 160 may be driven for each memory bank.

In the boost voltage generator 200 according to another embodiment of the present invention illustrated in FIG. 7, two boost voltage pumps 262 and 264 are connected to each of the memory banks.

That is, the pumping of the boosted voltage VPP can be halved by controlling the two boosted voltage pumps 262 and 264, respectively.

8 is a circuit diagram illustrating in detail a boosted voltage oscillator among components of a boosted voltage generator according to another embodiment of the present invention shown in FIG. 7.

Referring to FIG. 8, the booster voltage oscillator 240 of the components of the booster voltage generator 200 according to another embodiment of the present invention may pump a first booster voltage pump to one bank to generate a booster voltage VPP. In step-up voltage generator having a step 262 and the second step-up voltage pump 264, to activate or deactivate the oscillation control signal (VPP_ACT) in response to the bank operation signal (ACT0) and the pumping activation signal (PPE_ACT) Driving of the oscillation control signal controller 242 and the first pump control signal VPPOSC1 and the second boost voltage pump 264 that control the driving of the first boost voltage pump 262 in response to the oscillation control signal VPP_ACT. To deactivate the first pump control signal VPPOSC1 in response to the first pump test signal TM_PUMP_OSC1 in the test mode and the pump control signal oscillator 244 for oscillating the second pump control signal VPPOSC2 for controlling the The first test operation unit 246, and the test To the second in response to the pump test signal (TM_PUMP_OSC2) mode and a second test operation section 248 for controlling the disabling of a second pump control signal (VPPOSC2).

Here, the oscillation control signal controller 242 activates the oscillation control signal VPP_ACT when both the bank operation signal ACT0 and the pumping activation signal PPE_ACT are activated.

In addition, the oscillation control signal control unit 242 receives the bank operation signal ACT0 as one input, and the second NAND gate NAND2 and the second NAND which receive and output the pumping activation signal PPE_ACT as this input. The third inverter INV3 receives the output signal of the gate NAND2 and outputs the oscillation control signal VPP_ACT.

In the pump control signal oscillator 244, the first pump control signal VPPOSC1 and the second pump control signal VPPOSC2 oscillate with opposite phases.

In addition, the pump control signal oscillator 244 toggles with a constant period in response to the oscillation control signal VPP_ACT, and has a first signal S1 and a second signal S2 having opposite phases to each other. An oscillator 2442 for oscillating the first oscillator, a first pump control signal output unit 2444 for outputting the first signal S1 as the first pump control signal VPPOSC1, and a second pump control for the second signal S2. And a second pump control signal output section 2446 which outputs as a signal VPPOSC2.

Here, the first pump control signal output unit 2444 receives a first signal S1 as one input and a third NAND gate for receiving and outputting an output signal of the first test operation unit 246 as this input. NAND3) and a fourth inverter INV4 for receiving the output signal of the third NAND gate NAND3 and outputting the same as the first pump control signal VPPOSC1.

In addition, the second pump control signal output unit 2446 receives a second signal S2 as one input and a fourth NAND gate for receiving and outputting the output signal of the second test operation unit 248 as this input. And a fifth inverter INV5 which receives the output signal of the fourth NAND gate NAND4 and outputs it as the second pump control signal VPPOSC2.

The first test operation unit 246 deactivates the first pump control signal VPPOSC1 when the first pumping test signal TM_PUMP_OSC1 is activated.

In addition, the first test operation unit 246 includes a sixth inverter INV6 that receives and outputs the first pumping test signal TM_PUMP_OSC1, and outputs an output signal of the sixth inverter INV6 to the third NAND gate. The first pump control signal VPPOSC1 is inactivated by inputting to three inputs of NAND3).

The second test operation unit 248 deactivates the second pump control signal VPPOSC2 when the second pumping test signal TM_PUMP_OSC2 is activated.

In addition, the second test operation unit 248 includes a seventh inverter INV7 that receives and outputs the second pumping test signal TM_PUMP_OSC2, and outputs the output signal of the seventh inverter INV7 to the fourth NAND gate. The second pump control signal VPPOSC2 is inactivated by inputting to three inputs of NAND4).

As described above, when the embodiment of the present invention is applied, an appropriate amount of the boost voltage pump may be tested through a test mode for disabling driving of the boost voltage pump for each memory bank.

Through this, the minimum usable current can be known in a situation where the potential level of the boost voltage VPP is stably supplied.

In addition, it is possible to make a reference for the usage of the boost voltage pump according to the type and size of the device (device).

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill.

For example, the position and type of the logic gate illustrated in the above-described embodiment should be implemented differently according to the polarity of the input signal.

As described above, when the embodiment of the present invention is applied, an appropriate amount of the boost voltage pump may be tested through a test mode for disabling driving of the boost voltage pump for each memory bank.

Through this, the minimum usable current can be known in a situation where the potential level of the boost voltage VPP is stably supplied.

In addition, a reference may be made to the usage of the boost voltage pump according to the type and size of the device.

Claims (18)

In a booster voltage generator having a booster voltage pump in one bank to generate a booster voltage, Pump control signal oscillating means for oscillating a pump control signal for controlling the driving of the boosted voltage pump in response to an oscillation control signal; Test operation means for controlling deactivation of the oscillation control signal in response to an oscillation test signal in a test mode; Normal operation means for controlling to activate or deactivate the oscillation control signal in response to a bank operation signal and a pumping activation signal in a normal mode. Oscillation circuit of the boost voltage generator comprising a. The method of claim 1, The normal operation means, And the oscillation control signal is activated when both the bank operation signal and the pumping activation signal are activated in the normal mode. The method of claim 1, The normal operation means, A first NAND gate configured to receive the bank operation signal as one input, the pumping activation signal as this input, and the output signal of the test operation means as three inputs; And A first inverter which receives an output signal of the first NAND gate and outputs the oscillation control signal An oscillation circuit of a boosted voltage generator, characterized in that it comprises a. The method of claim 1, The test operation means, And the oscillation control signal is inactivated when the oscillation test signal is activated in a test mode. The method of claim 3, The test operation means, An oscillation of a boost voltage generator having a second inverter for receiving and outputting the oscillation test signal and controlling the deactivation of the oscillation control signal by inputting an output signal of the second inverter to three inputs of the first NAND gate; Circuit. In a boost voltage generator having a first boost voltage pump and a second boost voltage pump in one bank to generate a boost voltage, Oscillation control signal control means for controlling activation or deactivation of the oscillation control signal in response to the bank operation signal and the pumping activation signal; Pump control signal oscillating means for oscillating a first pump control signal for controlling the driving of the first boosted voltage pump and a second pump control signal for controlling the driving of the second boosted voltage pump in response to the oscillation control signal; First test operation means for controlling deactivation of the first pump control signal in response to a first pumping test signal in a test mode; And Second test operation means for controlling deactivation of the second pump control signal in response to a second pumping test signal in a test mode; Oscillation circuit of the boost voltage generator comprising a. The method of claim 6, The oscillation control signal control means, And the oscillation control signal is activated when both the bank operation signal and the pumping activation signal are activated. The method of claim 6, The oscillation control signal control means, A second NAND gate that receives the bank operation signal as one input and receives the pumping activation signal as an input; And A third inverter which receives the output signal of the second NAND gate and outputs it as the oscillation control signal An oscillation circuit of a boosted voltage generator, characterized in that it comprises a. The method of claim 6, In the pump control signal oscillating means, And the first pump control signal and the second pump control signal oscillate with opposite phases to each other. The method of claim 6, The pump control signal oscillating means, Oscillating means for toggling with a predetermined period in response to the oscillation control signal and oscillating a first signal and a second signal having opposite phases to each other; First pump control signal output means for outputting the first signal as the first pump control signal; And Second pump control signal output means for outputting the second signal as the second pump control signal; Oscillation circuit of the boost voltage generator comprising a. The method of claim 10, The first pump control signal output means, A third NAND gate which receives the first signal as one input and receives an output signal of the first test operation means as the input; And A fourth inverter which receives the output signal of the third NAND gate and outputs it as the first pump control signal Oscillation circuit of a boosted voltage generator having a. The method of claim 10, The second pump control signal output means, A fourth NAND gate which receives the second signal as one input and receives the output signal of the second test operation means as the input; And A fifth inverter that receives the output signal of the fourth NAND gate and outputs the output signal as the second pump control signal Oscillation circuit of a boosted voltage generator having a. The method of claim 6, The first test operation means, And deactivating the first pump control signal when the first pumping test signal is activated. The method of claim 11, The first test operation means, And a sixth inverter configured to receive and output the first pumping test signal, and to boost the first pump control signal by deactivating the first pump control signal by inputting an output signal of the sixth inverter to three inputs of the third NAND gate. Oscillator circuit of voltage generator. The method of claim 6, The second test operation means, And when the second pumping test signal is activated, deactivating the second pump control signal. The method of claim 6, The second test operation means, And a seventh inverter configured to receive and output the second pumping test signal, and boost the second pump control signal by inputting an output signal of the seventh inverter to three inputs of the fourth NAND gate. Oscillator circuit of voltage generator. Step-up voltage detection means for detecting a potential level of the step-up voltage and determining and outputting a logic level of the pumping activation signal according to the detection result; A plurality of booster voltage pumps for boosting the booster voltage in response to the plurality of pump control signals and supplying the booster voltage in a one-to-one symmetry with the memory bank; And Controlling the oscillation of the pump control signal in response to the pumping activation signal and the plurality of bank operation signals in a normal mode, and oscillating a predetermined number of signals of the plurality of pump control signals in response to the oscillation test signal in a test mode. Multiple booster voltage oscillation means Step-up voltage generator comprising a. Step-up voltage detection means for detecting a potential level of the step-up voltage and determining and outputting a logic level of the pumping activation signal according to the detection result; A first boosting voltage pump that supplies a boosted voltage symmetrically with the plurality of memory banks one-to-one, and pumps the boosted voltage in response to the first pump control signal, and a second boosting voltage in response to the second pump control signal A plurality of pumping means having a boosted voltage pump; Controlling the oscillation of the first pump control signal and the second pump control signal in response to the pumping activation signal and the plurality of bank operation signals in a normal mode, and the plurality of second signals in response to the first pumping test signal in a test mode. A plurality of step-up voltage oscillating means which does not oscillate a certain number of signals in one pump control signal and does not oscillate a certain number of signals in the plurality of second pump control signals in response to a second pumping test signal. Step-up voltage generator comprising a.

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