JP2005303099A - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

Info

Publication number
JP2005303099A
JP2005303099A JP2004118513A JP2004118513A JP2005303099A JP 2005303099 A JP2005303099 A JP 2005303099A JP 2004118513 A JP2004118513 A JP 2004118513A JP 2004118513 A JP2004118513 A JP 2004118513A JP 2005303099 A JP2005303099 A JP 2005303099A
Authority
JP
Japan
Prior art keywords
focus ring
plasma
sheath
wafer
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004118513A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005303099A5 (enExample
Inventor
Ryoji Nishio
良司 西尾
Takamitsu Kanekiyo
任光 金清
Yoshiyuki Ota
佳幸 太田
Takeshi Matsumoto
松本　　剛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004118513A priority Critical patent/JP2005303099A/ja
Priority to US10/902,032 priority patent/US8057634B2/en
Publication of JP2005303099A publication Critical patent/JP2005303099A/ja
Publication of JP2005303099A5 publication Critical patent/JP2005303099A5/ja
Priority to US11/802,958 priority patent/US20070227669A1/en
Priority to US11/802,955 priority patent/US20070232085A1/en
Priority to US13/103,666 priority patent/US8366870B2/en
Priority to US13/707,421 priority patent/US8632637B2/en
Priority to US14/159,465 priority patent/US20140137059A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G06F30/17—Mechanical parametric or variational design
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2004118513A 2004-04-14 2004-04-14 プラズマ処理装置およびプラズマ処理方法 Pending JP2005303099A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004118513A JP2005303099A (ja) 2004-04-14 2004-04-14 プラズマ処理装置およびプラズマ処理方法
US10/902,032 US8057634B2 (en) 2004-04-14 2004-07-30 Method and apparatus for plasma processing
US11/802,958 US20070227669A1 (en) 2004-04-14 2007-05-29 Method and apparatus for plasma processing
US11/802,955 US20070232085A1 (en) 2004-04-14 2007-05-29 Method and apparatus for plasma processing
US13/103,666 US8366870B2 (en) 2004-04-14 2011-05-09 Method and apparatus for plasma processing
US13/707,421 US8632637B2 (en) 2004-04-14 2012-12-06 Method and apparatus for plasma processing
US14/159,465 US20140137059A1 (en) 2004-04-14 2014-01-21 Method and apparatus for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004118513A JP2005303099A (ja) 2004-04-14 2004-04-14 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2005303099A true JP2005303099A (ja) 2005-10-27
JP2005303099A5 JP2005303099A5 (enExample) 2007-04-12

Family

ID=35095057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004118513A Pending JP2005303099A (ja) 2004-04-14 2004-04-14 プラズマ処理装置およびプラズマ処理方法

Country Status (2)

Country Link
US (6) US8057634B2 (enExample)
JP (1) JP2005303099A (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007066819A1 (ja) 2005-12-09 2007-06-14 Sony Corporation 音楽編集装置及び音楽編集方法
KR100959706B1 (ko) 2006-03-17 2010-05-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법
JP2010532101A (ja) * 2007-06-28 2010-09-30 ラム リサーチ コーポレーション 可変静電容量を有するプラズマ処理システムのための方法および装置
JP2011108764A (ja) * 2009-11-16 2011-06-02 Hitachi High-Technologies Corp プラズマ処理装置
US7988814B2 (en) 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
JP2011227094A (ja) * 2011-08-01 2011-11-10 Mitsubishi Electric Corp 状態検出装置およびレーザ加工装置
JP2012109608A (ja) * 2012-02-20 2012-06-07 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
KR101343967B1 (ko) * 2012-07-06 2013-12-20 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 장치 및 처리 방법
KR20150046747A (ko) * 2013-10-22 2015-04-30 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2016134572A (ja) * 2015-01-21 2016-07-25 ルネサスエレクトロニクス株式会社 半導体製造装置およびその管理方法、並びに半導体装置の製造方法
JP2018022899A (ja) * 2017-09-01 2018-02-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10074545B2 (en) 2014-04-09 2018-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
WO2019244700A1 (ja) * 2018-06-22 2019-12-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマエッチング方法
JP2020077659A (ja) * 2018-11-05 2020-05-21 東京エレクトロン株式会社 被処理体の処理方法及びプラズマ処理装置
KR20200087694A (ko) * 2019-01-11 2020-07-21 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP2020177959A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 クリーニング処理方法及びプラズマ処理装置
WO2021124470A1 (ja) * 2019-12-18 2021-06-24 株式会社日立ハイテク プラズマ処理装置

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
JP2005303099A (ja) 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US7572737B1 (en) * 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
CN101974738B (zh) * 2010-11-19 2012-10-31 理想能源设备有限公司 等离子体增强化学气相沉积装置
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
JP5976377B2 (ja) * 2012-04-25 2016-08-23 東京エレクトロン株式会社 被処理基体に対する微粒子付着の制御方法、及び、処理装置
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
JP6573325B2 (ja) * 2013-12-17 2019-09-11 東京エレクトロン株式会社 プラズマ密度を制御するシステムおよび方法
WO2015099892A1 (en) * 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
CN105659375B (zh) 2014-09-26 2021-08-24 英特尔公司 柔性封装架构
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
US10301718B2 (en) * 2016-03-22 2019-05-28 Lam Research Corporation Asymmetric pedestal/carrier ring arrangement for edge impedance modulation
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
EP3580841A4 (en) 2017-02-07 2020-12-16 Eagle Harbor Technologies, Inc. TRANSFORMER-RESONANCE CONVERTER
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
JP6974088B2 (ja) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6932070B2 (ja) * 2017-11-29 2021-09-08 東京エレクトロン株式会社 フォーカスリング及び半導体製造装置
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
FR3077678B1 (fr) 2018-02-07 2022-10-21 St Microelectronics Rousset Procede de detection d'une atteinte a l'integrite d'un substrat semi-conducteur d'un circuit integre depuis sa face arriere, et dispositif correspondant
JP7018331B2 (ja) 2018-02-23 2022-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
KR102499709B1 (ko) 2018-08-10 2023-02-16 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
WO2021134000A1 (en) 2019-12-24 2021-07-01 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7142551B2 (ja) * 2018-12-03 2022-09-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US10796887B2 (en) 2019-01-08 2020-10-06 Eagle Harbor Technologies, Inc. Efficient nanosecond pulser with source and sink capability for plasma control applications
US11721595B2 (en) * 2019-01-11 2023-08-08 Tokyo Electron Limited Processing method and plasma processing apparatus
US11393663B2 (en) * 2019-02-25 2022-07-19 Tokyo Electron Limited Methods and systems for focus ring thickness determinations and feedback control
CN112017936B (zh) * 2019-05-28 2024-05-31 东京毅力科创株式会社 等离子体处理装置
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
JP7394711B2 (ja) * 2020-06-23 2023-12-08 東京エレクトロン株式会社 測定器及びシースの厚さを求める方法
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
CN113308681B (zh) * 2021-05-21 2022-01-11 北京北方华创微电子装备有限公司 半导体工艺设备中的承载装置和半导体工艺设备
CN113458086A (zh) * 2021-06-03 2021-10-01 广东工业大学 一种火箭发动机零件的清洗装置及清洗方法
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
KR20250084155A (ko) 2022-09-29 2025-06-10 이글 하버 테크놀로지스, 인코포레이티드 고전압 플라즈마 제어

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784490A (en) 1987-03-02 1988-11-15 Hewlett-Packard Company High thermal stability plane mirror interferometer
JPS63229719A (ja) 1987-03-18 1988-09-26 Yamaguchi Nippon Denki Kk ドライエツチング装置
JP3260168B2 (ja) 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
JPH06120140A (ja) 1992-10-08 1994-04-28 Hitachi Ltd 半導体製造方法および装置
JPH06168911A (ja) 1992-11-30 1994-06-14 Toshiba Corp 半導体製造装置
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP3120752B2 (ja) * 1997-05-26 2000-12-25 日本電気株式会社 形状シミュレーション方法
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
KR100842947B1 (ko) * 2000-12-26 2008-07-01 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
JP3665265B2 (ja) 2000-12-28 2005-06-29 株式会社日立製作所 プラズマ処理装置
US6465266B1 (en) * 2001-01-05 2002-10-15 Advanced Micro Devices, Inc. Semiconductor device short analysis
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007066819A1 (ja) 2005-12-09 2007-06-14 Sony Corporation 音楽編集装置及び音楽編集方法
KR100959706B1 (ko) 2006-03-17 2010-05-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법
US7988814B2 (en) 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
JP2013080947A (ja) * 2007-06-28 2013-05-02 Lam Research Corporation 可変静電容量を有するプラズマ処理システムのための方法および装置
JP2010532101A (ja) * 2007-06-28 2010-09-30 ラム リサーチ コーポレーション 可変静電容量を有するプラズマ処理システムのための方法および装置
JP2011108764A (ja) * 2009-11-16 2011-06-02 Hitachi High-Technologies Corp プラズマ処理装置
JP2011227094A (ja) * 2011-08-01 2011-11-10 Mitsubishi Electric Corp 状態検出装置およびレーザ加工装置
JP2012109608A (ja) * 2012-02-20 2012-06-07 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
KR101343967B1 (ko) * 2012-07-06 2013-12-20 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 장치 및 처리 방법
KR20150046747A (ko) * 2013-10-22 2015-04-30 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102301412B1 (ko) 2013-10-22 2021-09-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US9761418B2 (en) 2013-10-22 2017-09-12 Tokyo Electron Limited Plasma processing apparatus
US10074545B2 (en) 2014-04-09 2018-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP2016134572A (ja) * 2015-01-21 2016-07-25 ルネサスエレクトロニクス株式会社 半導体製造装置およびその管理方法、並びに半導体装置の製造方法
JP2018022899A (ja) * 2017-09-01 2018-02-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2019244700A1 (ja) * 2018-06-22 2019-12-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマエッチング方法
JP7090149B2 (ja) 2018-06-22 2022-06-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマエッチング方法
JPWO2019244700A1 (ja) * 2018-06-22 2021-07-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマエッチング方法
JP2020077659A (ja) * 2018-11-05 2020-05-21 東京エレクトロン株式会社 被処理体の処理方法及びプラズマ処理装置
JP7175162B2 (ja) 2018-11-05 2022-11-18 東京エレクトロン株式会社 被処理体のプラズマエッチング方法及びプラズマエッチング装置
KR20200087694A (ko) * 2019-01-11 2020-07-21 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP2020113759A (ja) * 2019-01-11 2020-07-27 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
JP7401313B2 (ja) 2019-01-11 2023-12-19 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
KR102841591B1 (ko) 2019-01-11 2025-08-01 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP2020177959A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 クリーニング処理方法及びプラズマ処理装置
JP7462383B2 (ja) 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
KR20210080275A (ko) * 2019-12-18 2021-06-30 주식회사 히타치하이테크 플라스마 처리 장치
CN113348732A (zh) * 2019-12-18 2021-09-03 株式会社日立高新技术 等离子处理装置
WO2021124470A1 (ja) * 2019-12-18 2021-06-24 株式会社日立ハイテク プラズマ処理装置
JPWO2021124470A1 (ja) * 2019-12-18 2021-12-23 株式会社日立ハイテク プラズマ処理装置
JP7043617B2 (ja) 2019-12-18 2022-03-29 株式会社日立ハイテク プラズマ処理装置
KR102503478B1 (ko) * 2019-12-18 2023-02-27 주식회사 히타치하이테크 플라스마 처리 장치
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置

Also Published As

Publication number Publication date
US8366870B2 (en) 2013-02-05
US8632637B2 (en) 2014-01-21
US20050230049A1 (en) 2005-10-20
US8057634B2 (en) 2011-11-15
US20110209828A1 (en) 2011-09-01
US20140137059A1 (en) 2014-05-15
US20070227669A1 (en) 2007-10-04
US20070232085A1 (en) 2007-10-04
US20130174105A1 (en) 2013-07-04

Similar Documents

Publication Publication Date Title
JP2005303099A (ja) プラズマ処理装置およびプラズマ処理方法
KR102195550B1 (ko) 플라즈마 처리 장치
JP5808697B2 (ja) ドライエッチング装置及びドライエッチング方法
US12062524B2 (en) Plasma reactor having a variable coupling of low frequency RF power to an annular electrode
JP3123883U (ja) プラズマ処理チャンバ内で使用されるプロセスキット
US7190119B2 (en) Methods and apparatus for optimizing a substrate in a plasma processing system
KR100642157B1 (ko) 플라즈마 처리 장치 및 방법 그리고 플라즈마 생성용전극판
US6872281B1 (en) Chamber configuration for confining a plasma
KR101488538B1 (ko) 다중 주파수 ｒｆ 전력을 이용한 하이브리드 ｒｆ 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법
TW202042279A (zh) 電漿處理裝置及電漿處理方法
TWI791615B (zh) 電漿處理裝置
JPH11317299A (ja) 高周波放電方法及びその装置並びに高周波処理装置
JP5807071B2 (ja) 基板処理装置及び金属膜のエッチング方法、磁気抵抗効果素子の製造方法
US20170025255A1 (en) Plasma processing apparatus
JP2008182081A (ja) プラズマ処理装置
CN107369604B (zh) 反应腔室及半导体加工设备
JP2011014579A (ja) プラズマ処理装置及びプラズマ処理方法
US20130160949A1 (en) Plasma processing apparatus
US20240194438A1 (en) Ion extraction optics having novel blocker configuration
JP2017069209A (ja) プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
KR20240170520A (ko) 플라스마 처리 장치 및 플라스마 처리 방법
JP2008147384A (ja) ドライエッチング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070226

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100323

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100518