JP2005116695A5 - - Google Patents

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Publication number
JP2005116695A5
JP2005116695A5 JP2003347274A JP2003347274A JP2005116695A5 JP 2005116695 A5 JP2005116695 A5 JP 2005116695A5 JP 2003347274 A JP2003347274 A JP 2003347274A JP 2003347274 A JP2003347274 A JP 2003347274A JP 2005116695 A5 JP2005116695 A5 JP 2005116695A5
Authority
JP
Japan
Prior art keywords
transistor
impurity diffusion
type
diffusion region
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2003347274A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005116695A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003347274A priority Critical patent/JP2005116695A/ja
Priority claimed from JP2003347274A external-priority patent/JP2005116695A/ja
Priority to US10/865,999 priority patent/US20050073009A1/en
Publication of JP2005116695A publication Critical patent/JP2005116695A/ja
Publication of JP2005116695A5 publication Critical patent/JP2005116695A5/ja
Abandoned legal-status Critical Current

Links

JP2003347274A 2003-10-06 2003-10-06 半導体装置 Abandoned JP2005116695A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003347274A JP2005116695A (ja) 2003-10-06 2003-10-06 半導体装置
US10/865,999 US20050073009A1 (en) 2003-10-06 2004-06-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003347274A JP2005116695A (ja) 2003-10-06 2003-10-06 半導体装置

Publications (2)

Publication Number Publication Date
JP2005116695A JP2005116695A (ja) 2005-04-28
JP2005116695A5 true JP2005116695A5 (https=) 2006-02-02

Family

ID=34386399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003347274A Abandoned JP2005116695A (ja) 2003-10-06 2003-10-06 半導体装置

Country Status (2)

Country Link
US (1) US20050073009A1 (https=)
JP (1) JP2005116695A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049282B2 (en) * 2006-09-21 2011-11-01 Agere Systems Inc. Bipolar device having buried contacts
US20080316659A1 (en) * 2007-06-19 2008-12-25 Ismail Hakki Oguzman High voltage esd protection featuring pnp bipolar junction transistor
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
WO2013051175A1 (ja) 2011-10-06 2013-04-11 パナソニック株式会社 半導体集積回路装置
JP2014132717A (ja) * 2013-01-07 2014-07-17 Seiko Epson Corp 静電気放電保護回路及び半導体回路装置
JP2014203851A (ja) * 2013-04-01 2014-10-27 株式会社東芝 半導体装置及びその製造方法
JP2015095492A (ja) * 2013-11-08 2015-05-18 株式会社東芝 半導体装置
US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
JP2017055087A (ja) * 2015-09-11 2017-03-16 株式会社東芝 半導体装置
US20250151400A1 (en) * 2023-11-03 2025-05-08 International Business Machines Corporation Semiconductor structures with integrated electrostatic discharge clamp circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214627A (ja) * 1998-01-21 1999-08-06 Mitsubishi Electric Corp Ｅｓｄ保護素子及びその製造方法
US6226038B1 (en) * 1998-04-03 2001-05-01 Avid Technology, Inc. HDTV editing and effects previsualization using SDTV devices
US6589847B1 (en) * 2000-08-03 2003-07-08 Advanced Micro Devices, Inc. Tilted counter-doped implant to sharpen halo profile
JP4620282B2 (ja) * 2001-04-24 2011-01-26 ルネサスエレクトロニクス株式会社 半導体装置
US6822297B2 (en) * 2001-06-07 2004-11-23 Texas Instruments Incorporated Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness

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