JP2005101651A - 波長変換注入成形材 - Google Patents
波長変換注入成形材 Download PDFInfo
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- 238000005266 casting Methods 0.000 title abstract description 6
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000000463 material Substances 0.000 claims abstract description 76
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 239000002223 garnet Substances 0.000 claims abstract description 16
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 229920003023 plastic Polymers 0.000 claims abstract description 6
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 5
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 5
- 238000001746 injection moulding Methods 0.000 claims description 21
- 239000012778 molding material Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000000049 pigment Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 description 9
- 229910052684 Cerium Inorganic materials 0.000 description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C09K11/7769—Oxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
【解決手段】放射線源により励起するための発光物質装置を有する波長変換注入成形材であり、その際、該発光物質装置はCeで活性化されたガーネット構造A3B5O12を有する少なくとも1種の発光物質を含有し、その際、第二成分Bは元素Al、GaまたはInの少なくとも1つを有し、かつ該発光物質装置は透明プラスチック中に混合されている波長変換注入成形材において、第一成分AはY、Lu、Sc、La、Gd、SmおよびTbからなる群の元素を少なくとも1種含有し、かつ少なくとも部分的に主格子の成分としてのTbにより占められており、かつ発光物質装置は相互に混合された複数の発光物質を含有することを特徴とする、波長変換注入成形材。
【選択図】図1
Description
(Tb1−x−ySExCey)3(Al、Ga)5O12
のガーネットは特に有利であり、この場合、SE=Y、Ga、La、Smおよび/またはLuであり、0≦x≦0.5−yであり、0<y<0.1が該当する。
(TbxSE1−x−yCey)3(Al、Ga)5O12
のガーネットは発光物質成分として好適であることが判明し、この場合、SE=Y、Gd、Laおよび/またはLuであり、0≦x≦0.02、特にx=0.01であり、0<y<0.1が該当する。しばしばyは0.01〜0.05の範囲にある。
図1は、種々の発光物質および本発明による発光物質装置の色度点直線を有する色度点のグラフを示し、かつ
図2は、本発明による光源装置の実施例の横断面の略図を示す。
Claims (9)
- 放射線源により励起するための発光物質装置を有する波長変換注入成形材であり、その際、該発光物質装置はCeで活性化されたガーネット構造A3B5O12を有する少なくとも1種の発光物質を含有し、その際、第二成分Bは元素Al、GaまたはInの少なくとも1つを有し、かつ該発光物質装置は透明プラスチック中に混合されている波長変換注入成形材において、
− 第一成分AはY、Lu、Sc、La、Gd、SmおよびTbからなる群の元素を少なくとも1種含有し、かつ少なくとも部分的に主格子の成分としてのTbにより占められており、かつ
− 発光物質装置は相互に混合された複数の発光物質を含有する
ことを特徴とする、波長変換注入成形材。 - 発光物質装置がCeで活性化されたガーネット構造A3B5O12を有する少なくとも1種の別の発光物質を含有し、その際、
− 第一成分AはY、Lu、Sc、La、GdおよびSmからなる群の元素を少なくとも1種含有し、かつ
− 第二成分Bは元素Al、GaまたはInの少なくとも1種の元素を含有する、
請求項1記載の注入成形材。 - 発光物質装置が構造Y3(Al、Ga)5O12:Ceのガーネットおよび構造(Tb1−x−ySExCey)3(Al、Ga)5O12のガーネットを含有し、その際、SE=Y、Gd、Laおよび/またはLuであり、0≦x≦0.5−yであり、0<y<0.1である、請求項1または2記載の注入成形材。
- 透明プラスチックが注入樹脂を含有し、かつ発光物質装置が無機発光物質顔料粉末混合物として注入樹脂中に分散している、請求項1から3までのいずれか1項記載の注入成形材。
- 発光物質顔料が20μm以下の粒径および5μm以下の平均粒径d50を有している、請求項1から4までのいずれか1項記載の注入成形材。
- 透明プラスチックおよび発光物質装置以外にさらにチキソトロピー剤、無機拡散体、疎水化剤および/または粘着剤を含有する、請求項1から5までのいずれか1項記載の注入成形材。
- 発光物質装置が400〜500nmの波長領域の放射線により励起可能である、請求項1から6までのいずれか1項記載の注入成形材。
- 発光物質装置が420〜490nmの波長領域の放射線により励起可能である、請求項1から7までのいずれか1項記載の注入成形材。
- 放射線源が請求項1から8までのいずれか1項記載の注入成形材を有する、光源装置
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19934126A DE19934126A1 (de) | 1999-07-23 | 1999-07-23 | Leuchtstoff für Lichtquellen und zugehörige Lichtquelle |
DE19963791A DE19963791A1 (de) | 1999-12-30 | 1999-12-30 | Leuchtstoffanordnung, wellenlängenkonvertierende Vergussmasse und Lichtquelle |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001513210A Division JP3825318B2 (ja) | 1999-07-23 | 2000-07-24 | 発光物質装置、波長変換注入成形材および光源 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005101651A true JP2005101651A (ja) | 2005-04-14 |
JP2005101651A5 JP2005101651A5 (ja) | 2007-09-06 |
JP4639351B2 JP4639351B2 (ja) | 2011-02-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2001513210A Expired - Lifetime JP3825318B2 (ja) | 1999-07-23 | 2000-07-24 | 発光物質装置、波長変換注入成形材および光源 |
JP2004341109A Expired - Lifetime JP4639351B2 (ja) | 1999-07-23 | 2004-11-25 | 波長変換注入成形材 |
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Application Number | Title | Priority Date | Filing Date |
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JP2001513210A Expired - Lifetime JP3825318B2 (ja) | 1999-07-23 | 2000-07-24 | 発光物質装置、波長変換注入成形材および光源 |
Country Status (10)
Country | Link |
---|---|
US (3) | US7132786B1 (ja) |
EP (2) | EP1116419B1 (ja) |
JP (2) | JP3825318B2 (ja) |
KR (1) | KR100450647B1 (ja) |
CN (1) | CN100334746C (ja) |
AT (1) | ATE279089T1 (ja) |
AU (1) | AU7267500A (ja) |
CA (1) | CA2343909C (ja) |
DE (2) | DE50016032D1 (ja) |
WO (1) | WO2001008453A1 (ja) |
Families Citing this family (63)
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CN100334746C (zh) * | 1999-07-23 | 2007-08-29 | 奥斯兰姆奥普托半导体股份有限两合公司 | 荧光材料混合物、波长转换的浇注料和光源装置 |
JP4817534B2 (ja) * | 2000-06-09 | 2011-11-16 | 星和電機株式会社 | 発光ダイオードランプ |
US6616862B2 (en) | 2001-05-21 | 2003-09-09 | General Electric Company | Yellow light-emitting halophosphate phosphors and light sources incorporating the same |
US6596195B2 (en) | 2001-06-01 | 2003-07-22 | General Electric Company | Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
CN1311054C (zh) * | 2001-07-19 | 2007-04-18 | 南帝化学工业股份有限公司 | 钇铝石榴石型荧光粉及其制法与应用 |
JP4032682B2 (ja) * | 2001-08-28 | 2008-01-16 | 三菱化学株式会社 | 蛍光体 |
TW595012B (en) | 2001-09-03 | 2004-06-21 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
DE10146719A1 (de) | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
US7008558B2 (en) * | 2001-10-11 | 2006-03-07 | General Electric Company | Terbium or lutetium containing scintillator compositions having increased resistance to radiation damage |
US6630077B2 (en) * | 2001-10-11 | 2003-10-07 | General Electric Company | Terbium- or lutetium - containing garnet phosphors and scintillators for detection of high-energy radiation |
EP1433831B1 (en) * | 2002-03-22 | 2018-06-06 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
TWI226357B (en) | 2002-05-06 | 2005-01-11 | Osram Opto Semiconductors Gmbh | Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body |
GB2400372B (en) * | 2003-04-09 | 2005-03-23 | Photonic Materials Ltd | Single crystal scintillators |
DE10316769A1 (de) * | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoffbassierte LED und zugehöriger Leuchtstoff |
WO2005022032A1 (ja) | 2003-08-28 | 2005-03-10 | Mitsubishi Chemical Corporation | 発光装置及び蛍光体 |
CN100354389C (zh) * | 2003-10-09 | 2007-12-12 | 中国科学院上海硅酸盐研究所 | 铝酸钆基发光薄膜材料芯片及其制备方法 |
DK176137B1 (da) * | 2003-10-27 | 2006-09-25 | Danfoss Silicon Power Gmbh | Flowfordelingsenhed og köleenhed med bypassflow |
US7094362B2 (en) * | 2003-10-29 | 2006-08-22 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
JP2005264031A (ja) * | 2004-03-19 | 2005-09-29 | Kun-Chui Lee | 白色発光装置 |
JP4529544B2 (ja) * | 2004-05-21 | 2010-08-25 | スタンレー電気株式会社 | Ledの製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
EP1471775B1 (de) | 2010-11-17 |
US6998771B2 (en) | 2006-02-14 |
EP1116419A1 (de) | 2001-07-18 |
EP1471775A3 (de) | 2008-05-14 |
JP4639351B2 (ja) | 2011-02-23 |
KR100450647B1 (ko) | 2004-10-01 |
DE50008093D1 (de) | 2004-11-11 |
EP1471775A2 (de) | 2004-10-27 |
DE50016032D1 (de) | 2010-12-30 |
US20050029929A1 (en) | 2005-02-10 |
CN1327706A (zh) | 2001-12-19 |
CN100334746C (zh) | 2007-08-29 |
US7261837B2 (en) | 2007-08-28 |
JP3825318B2 (ja) | 2006-09-27 |
CA2343909C (en) | 2013-04-02 |
EP1471775B9 (de) | 2011-04-13 |
US7132786B1 (en) | 2006-11-07 |
US20060133063A1 (en) | 2006-06-22 |
WO2001008453A1 (de) | 2001-02-01 |
ATE279089T1 (de) | 2004-10-15 |
CA2343909A1 (en) | 2001-02-01 |
JP2003505583A (ja) | 2003-02-12 |
EP1116419B1 (de) | 2004-10-06 |
AU7267500A (en) | 2001-02-13 |
KR20010079911A (ko) | 2001-08-22 |
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