JP2005045238A - 曲げ強化ベースプレートを備えたパワー半導体モジュール - Google Patents
曲げ強化ベースプレートを備えたパワー半導体モジュール Download PDFInfo
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- JP2005045238A JP2005045238A JP2004204701A JP2004204701A JP2005045238A JP 2005045238 A JP2005045238 A JP 2005045238A JP 2004204701 A JP2004204701 A JP 2004204701A JP 2004204701 A JP2004204701 A JP 2004204701A JP 2005045238 A JP2005045238 A JP 2005045238A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 19
- 239000011810 insulating material Substances 0.000 claims description 14
- 238000005219 brazing Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000002787 reinforcement Effects 0.000 claims description 4
- 238000005452 bending Methods 0.000 abstract description 10
- 239000004020 conductor Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000036316 preload Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Abstract
【解決手段】 基板(50)がベースプレート(20)上に配設されていて、更にベースプレート(20)が補強構造物(24)を有し、この補強構造物(24)がベースプレート(20)の長手方向に延在し、更にこの補強構造物(24)がベースプレート材料自体から変形により形成されていて、ベースプレート(20)により提供されている面から突出していること。
【選択図】 図3
Description
20 ベースプレート
22 穴
24 補強構造物
24a 部分
24b 型押し領域
26 切欠き
30 ケーシング
40、42、44 ターミナル要素
46 ロウ付けブリッジ
48 ワイヤボンディング接続部
50 基板
52 絶縁材料ボディ
53 金属被覆(銅層)
54 接続パス(銅層)
56 パワー半導体素子
58 センサ機構構成部品
60 接触バネ
70 カバー
71 導体プレート(プリント配線板)
72 導体パス
76 ターミナルピン
78 接触面
80 冷却体
Claims (9)
- 冷却体(80)上に取り付ける金属性のベースプレート(20)を備えたパワー半導体モジュール(10)であって、このパワー半導体モジュールが、フレーム状のケーシング(30)と、カバー(70)と、負荷接触部(40、42、44)及び補助接触部のための外部へと通じるターミナル要素と、ケーシング(30)内部に配設されている電気絶縁式の少なくとも1つの基板(50)とを有し、この基板の方が、絶縁材料ボディ(52)と、ベースプレート(20)とは反対側の絶縁材料ボディ(52)の第1主面上に設けられていて互いに電気絶縁されている金属性の複数の接続パス(54)と、これらの接続パス(54)上に設けられていて回路に適してこれらの接続パス(54)と接続されているパワー半導体素子(56)と、ベースプレート(20)側の絶縁材料ボディ(52)の第2主面上に設けられている金属性の少なくとも1つの層(53)とを有する、前記パワー半導体モジュールにおいて、
基板(50)がベースプレート(20)上に配設されていて、更にベースプレート(20)が補強構造物(24)を有し、この補強構造物(24)がベースプレート(20)の長手方向に延在し、更にこの補強構造物(24)がベースプレート材料自体から変形により形成されていて、ベースプレート(20)により提供されている面から突出していることを特徴とするパワー半導体モジュール。 - 補強構造物(24)が、ベースプレート(20)の長手側の部分(24a)から成り、これらの部分(24a)が、ベースプレート(20)自体により提供されている面から基板(50)の方向に曲げられていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- ベースプレート(20)が、当該パワー半導体モジュールを冷却体(80)と捩込み接続するための複数の穴(22)を有することを特徴とする、請求項1に記載のパワー半導体モジュール。
- ベースプレート(20)が型抜き・曲げ・部材として実施されていて、更に補強のための部分(24)が切欠き(26)により解放されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- ベースプレート(20)が、基板(50)の金属性の層(53)と、平坦に実施されているロウ付け部を用いて材料結合式で接続されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 補強のための各々の部分(24)がベースプレート(20)の全長手側に渡って延在していることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 各側の部分(24)が中断され且つ互いに重なり合って配設されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 補強のための各々の部分(24)が、捩込み接続部のためのベースプレート(20)の穴(22)の間に配設されていてこれらの穴(22)から離間されていることを特徴とする、請求項2に記載のパワー半導体モジュール。
- 部分(24)がベースプレート(20)に対して直角に冷却体(80)とは反対側の方向に曲げられていることを特徴とする、請求項2に記載のパワー半導体モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10333329A DE10333329B4 (de) | 2003-07-23 | 2003-07-23 | Leistungshalbleitermodul mit biegesteifer Grundplatte |
Publications (2)
Publication Number | Publication Date |
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JP2005045238A true JP2005045238A (ja) | 2005-02-17 |
JP4264392B2 JP4264392B2 (ja) | 2009-05-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004204701A Active JP4264392B2 (ja) | 2003-07-23 | 2004-07-12 | 曲げ強化ベースプレートを備えたパワー半導体モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US7030491B2 (ja) |
EP (1) | EP1501127B1 (ja) |
JP (1) | JP4264392B2 (ja) |
KR (1) | KR100990527B1 (ja) |
AT (1) | ATE434833T1 (ja) |
DE (2) | DE10333329B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237354A (zh) * | 2010-04-28 | 2011-11-09 | 本田技研工业株式会社 | 电路基板 |
WO2020245890A1 (ja) * | 2019-06-03 | 2020-12-10 | 三菱電機株式会社 | パワーモジュール及び電力変換装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005063532B3 (de) | 2005-02-17 | 2022-03-10 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
DE102005007373B4 (de) | 2005-02-17 | 2013-05-29 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
JP2006253183A (ja) * | 2005-03-08 | 2006-09-21 | Hitachi Ltd | 半導体パワーモジュール |
DE102005037522A1 (de) * | 2005-08-09 | 2007-02-15 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit wannenförmigem Grundkörper |
DE102005039278A1 (de) * | 2005-08-19 | 2007-02-22 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Leitungselement |
DE102006058692A1 (de) * | 2006-12-13 | 2008-06-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Kontaktfedern |
DE102007010883A1 (de) * | 2007-03-06 | 2008-09-18 | Infineon Technologies Ag | Leistungshalbleiteranordnung und Verfahren zu dessen Herstellung |
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JP2003158229A (ja) | 2001-11-21 | 2003-05-30 | Mitsubishi Electric Corp | パワー半導体モジュールの製造装置 |
JP2003163315A (ja) * | 2001-11-29 | 2003-06-06 | Denki Kagaku Kogyo Kk | モジュール |
DE10316355C5 (de) | 2003-04-10 | 2008-03-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung |
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2003
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- 2004-06-19 EP EP04014433A patent/EP1501127B1/de active Active
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- 2004-07-12 JP JP2004204701A patent/JP4264392B2/ja active Active
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102237354A (zh) * | 2010-04-28 | 2011-11-09 | 本田技研工业株式会社 | 电路基板 |
US8659900B2 (en) | 2010-04-28 | 2014-02-25 | Honda Motor Co., Ltd. | Circuit board including a heat radiating plate |
CN102237354B (zh) * | 2010-04-28 | 2014-08-13 | 本田技研工业株式会社 | 电路基板 |
WO2020245890A1 (ja) * | 2019-06-03 | 2020-12-10 | 三菱電機株式会社 | パワーモジュール及び電力変換装置 |
JPWO2020245890A1 (ja) * | 2019-06-03 | 2021-10-21 | 三菱電機株式会社 | パワーモジュール及び電力変換装置 |
Also Published As
Publication number | Publication date |
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EP1501127A3 (de) | 2007-10-24 |
DE502004009640D1 (de) | 2009-08-06 |
US7030491B2 (en) | 2006-04-18 |
US20050035445A1 (en) | 2005-02-17 |
JP4264392B2 (ja) | 2009-05-13 |
ATE434833T1 (de) | 2009-07-15 |
EP1501127A2 (de) | 2005-01-26 |
KR100990527B1 (ko) | 2010-10-29 |
DE10333329A1 (de) | 2005-03-10 |
KR20050011714A (ko) | 2005-01-29 |
DE10333329B4 (de) | 2011-07-21 |
EP1501127B1 (de) | 2009-06-24 |
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