JP5156355B2 - 接触バネを有するパワー半導体モジュール - Google Patents
接触バネを有するパワー半導体モジュール Download PDFInfo
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- JP5156355B2 JP5156355B2 JP2007319560A JP2007319560A JP5156355B2 JP 5156355 B2 JP5156355 B2 JP 5156355B2 JP 2007319560 A JP2007319560 A JP 2007319560A JP 2007319560 A JP2007319560 A JP 2007319560A JP 5156355 B2 JP5156355 B2 JP 5156355B2
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- Prior art keywords
- power semiconductor
- semiconductor module
- contact
- hole
- contact device
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2421—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means using coil springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
Description
2 ベースプレート
3 ハウジング
30 穴
32 第1部分穴
34 第2部分穴
36 延長部
38a 他の部分穴
38b 他の部分穴
4 負荷端子要素
5 基板
52 絶縁セラミック
54、56 金属積層部
60 パワー半導体素子
62 ワイヤボンディング接続部
7 補助端子要素
70 接触バネ
72 第1接触装置
720 アーチ形状の変形部
722 S字形状の変形部
74 弾性部分
76 第2接触装置
DF 第1接触装置の直径
A 第1接触装置の逸脱量
D 第1部分穴の直径
Claims (3)
- ハウジング(3)と、少なくとも1つの金属性の導体パス(54)を有する基板(5)と、上記導体パス(54)から又は上記導体パス(54)上に配置されているパワー半導体素子(60)の接触面から外部へと通じる少なくとも1つの端子要素(7)とを有するパワー半導体モジュール(1)において、
上記端子要素(7)が、第1接触装置(72)と弾性部分(74)と第2接触装置(76)とを有する接触バネ(70)として形成されていること、
上記ハウジング(3)が、上記接触バネ(70)を受容するための第1部分穴(32)と上記第1部分穴(32)に基板側で接続する第2部分穴(34)を有する穴(30)を有し、上記接触バネ(70)の上記第1接触装置(72)がピン状に形成されていて、上記第2部分穴(34)の直径(D)が、ピン状の上記第1接触装置(72)の直径(DF)とこの上記第1接触装置(72)の変形部(720、722)により決定される逸脱量(A)の合計よりも小さいこと、
上記変形部(720、722)が上記第2部分穴(34)と上記基板(5)の間に配置されていること、及び
上記弾性部分(74)が上記第1部分穴(32)に受容されていること
を特徴とするパワー半導体モジュール。 - 上記変形部(720)がアーチ形状に形成されていて、この上記変形部(720)の厚さにより上記逸脱量(A)が決定されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 上記変形部(722)が同一面内のS字形状に形成されていて、そのように形成された各々の部分逸脱量(1/2A)が上記逸脱量(A)の半分の値を有することを特徴とする、請求項1に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006058692.1 | 2006-12-13 | ||
DE102006058692A DE102006058692A1 (de) | 2006-12-13 | 2006-12-13 | Leistungshalbleitermodul mit Kontaktfedern |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008153658A JP2008153658A (ja) | 2008-07-03 |
JP5156355B2 true JP5156355B2 (ja) | 2013-03-06 |
Family
ID=39272392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007319560A Active JP5156355B2 (ja) | 2006-12-13 | 2007-12-11 | 接触バネを有するパワー半導体モジュール |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1933379B1 (ja) |
JP (1) | JP5156355B2 (ja) |
KR (1) | KR101384818B1 (ja) |
CN (1) | CN101202258B (ja) |
DE (1) | DE102006058692A1 (ja) |
DK (1) | DK1933379T3 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008034467B4 (de) * | 2008-07-24 | 2014-04-03 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleitermodul und mit einer Verbindungseinrichtung |
DE102008057832B4 (de) | 2008-11-19 | 2010-07-01 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit vorgespannter Hilfskontaktfeder |
DE102009017733B4 (de) * | 2009-04-11 | 2011-12-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen |
DE102009028744A1 (de) | 2009-08-20 | 2011-03-31 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer elektrischen Verbindung zwischen Leiterplatten |
DE102009053472A1 (de) | 2009-11-16 | 2011-06-09 | Siemens Aktiengesellschaft | Elektronische Baugruppe und Verfahren zu deren Herstellung |
CN104701277B (zh) * | 2013-12-10 | 2017-12-05 | 江苏宏微科技股份有限公司 | 功率模块的封装结构 |
US9620877B2 (en) | 2014-06-17 | 2017-04-11 | Semiconductor Components Industries, Llc | Flexible press fit pins for semiconductor packages and related methods |
US9431311B1 (en) | 2015-02-19 | 2016-08-30 | Semiconductor Components Industries, Llc | Semiconductor package with elastic coupler and related methods |
DE102016123697B4 (de) * | 2016-12-07 | 2021-06-24 | Semikron Elektronik Gmbh & Co. Kg | Druckeinrichtung für eine leistungselektronische Schalteinrichtung, Schalteinrichtung und Anordnung hiermit |
DE102018102002A1 (de) * | 2018-01-30 | 2019-08-01 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul |
DE102019126923A1 (de) | 2019-10-08 | 2020-06-04 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10306643B4 (de) * | 2003-02-18 | 2005-08-25 | Semikron Elektronik Gmbh | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE10333329B4 (de) * | 2003-07-23 | 2011-07-21 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungshalbleitermodul mit biegesteifer Grundplatte |
AU2003254681A1 (en) * | 2003-08-22 | 2005-03-10 | Abb Schweiz Ag | Pressure contact spring for a contact arrangement in a power semiconductor module |
DE102004021122B4 (de) * | 2004-04-29 | 2007-10-11 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102004021927B4 (de) * | 2004-05-04 | 2008-07-03 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur inneren elektrischen Isolation eines Substrats für ein Leistungshalbleitermodul |
DE102004025609B4 (de) | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul |
JP4764979B2 (ja) * | 2004-06-08 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
DE102005024900B4 (de) * | 2004-06-08 | 2012-08-16 | Fuji Electric Co., Ltd. | Leistungsmodul |
CN100517669C (zh) * | 2004-06-08 | 2009-07-22 | 富士电机电子技术株式会社 | 半导体装置 |
DE102004050588B4 (de) * | 2004-10-16 | 2009-05-20 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einer Kontakteinrichtung |
DE102005016650B4 (de) * | 2005-04-12 | 2009-11-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit stumpf gelöteten Anschluss- und Verbindungselementen |
DE102005017849B4 (de) * | 2005-04-18 | 2012-11-08 | Siemens Ag | Elektronisches Bauteil |
DE102006006421B4 (de) | 2006-02-13 | 2014-09-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
-
2006
- 2006-12-13 DE DE102006058692A patent/DE102006058692A1/de not_active Ceased
-
2007
- 2007-12-11 JP JP2007319560A patent/JP5156355B2/ja active Active
- 2007-12-12 DK DK07024104.7T patent/DK1933379T3/da active
- 2007-12-12 EP EP07024104.7A patent/EP1933379B1/de active Active
- 2007-12-12 CN CN2007101997582A patent/CN101202258B/zh active Active
- 2007-12-12 KR KR1020070128637A patent/KR101384818B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1933379A3 (de) | 2009-01-14 |
KR20080055658A (ko) | 2008-06-19 |
DK1933379T3 (da) | 2013-08-26 |
EP1933379B1 (de) | 2013-05-22 |
CN101202258A (zh) | 2008-06-18 |
DE102006058692A1 (de) | 2008-06-26 |
KR101384818B1 (ko) | 2014-04-15 |
JP2008153658A (ja) | 2008-07-03 |
EP1933379A2 (de) | 2008-06-18 |
CN101202258B (zh) | 2013-03-27 |
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