CN101202258A - 具有接触弹簧的功率半导体模件 - Google Patents
具有接触弹簧的功率半导体模件 Download PDFInfo
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Abstract
本发明涉及一种功率半导体模件,具有一个外壳、一个基底和至少一个金属的印制线路。从一个印制线路或一个设置在印制线路上的功率半导体器件的接触面向外引出一些接头元件,其中,至少一个接头元件设计为接触弹簧。该接触弹簧具有一个第一接触装置、一个弹簧段和一个第二接触装置。外壳具有一个槽,该槽具有一个第一和一个第二分槽,用于安置接触弹簧。接触弹簧的第一接触装置设计为销钉状,并且第二分槽的直径小于销钉状第一接触装置的直径与由该第一接触装置的一个变形部确定的偏移之和。此外,所述变形部设置在第二分槽与基底之间。
Description
技术领域
本发明涉及一种按压力接触设计的功率半导体模件,它具有至少一个设计为接触弹簧的接头元件。例如由DE 197 19 703 A1已知一些构成本发明的出发点的功率半导体模件。
背景技术
按现有技术,这类功率半导体模件由一个外壳和至少一个设置在其中的电绝缘的基底组成,基底优选直接安装在一个冷却构件上。基底本身由一个绝缘材料体组成,它具有多个处于其上的彼此绝缘的金属连接线路和处在上面的并与这些连接线路按电路正确连接的功率半导体器件。此外,已知的功率半导体模件还具有一些用于外部的负载和辅助接头的接头元件以及一些设置在内部的连接元件。在功率半导体模件内部的这些用于按电路正确连接的连接元件大多设计为引线连接装置。
同样已知一些压力触点接通的功率半导体模件,如由DE 42 37 632A1已知的那样。在此出版物中,压力装置具有一个稳定的、优选金属的、用于建立压力的压力元件、一个弹性的用于蓄压的缓冲垫元件以及一个用于将压力引导到基底表面的分离的区域上的桥接元件。桥接元件优选设计为一个塑料成形体,它具有一个面朝缓冲垫元件的面,许多压力指从此面出发朝向基底表面的方向。
借助一种此类的压力装置,将基底压到一个冷却构件上继而可靠地实现在基底与冷却构件之间的传热。在这里弹性的缓冲垫元件用于在热负荷不同时以及在功率半导体模件的整个寿命期间保持恒定的压力特性。
由DE 10 2004 025 609 A1已知一种功率半导体模件,它包括一个底板和设计为接触弹簧的辅助接头元件。按此出版物,为了更可靠地电触点接通,各接触弹簧借助一个盖被施加压力。在这里将接触弹簧设置在外壳的一个结构没有详细公开的支架内。
由未在先公开的DE 10 2006 006 421已知一种具有至少一个接头元件的功率半导体模件,接头元件设计为接触弹簧,该接触弹簧具有一个第一接触装置、一个弹簧段和一个第二接触装置。在这里一个第一塑料成形体具有一个垂直于基底设置的竖筒,用于容纳一个接头元件。此竖筒本身具有一个用于防转地安置接头元件的侧槽和一个用于第二塑料成形体的一个配属的分体的凹口,其中所述的分体同样具有一个侧槽并且在背对基底的一侧具有一个用于接头元件的第一接触装置的槽并且在这里经过其延伸。
发明内容
本发明的目的是提供一种功率半导体模件,其中,接头元件设计为弹性的,能防止掉出并且该功率半导体模件可以容易地进行制造。
按本发明,此目的采取权利要求1的特征部分所述的措施达到。在从属权利要求中说明了有利的实施形式。
本发明的思想以上述类型的功率半导体模件为出发点,它具有一个外壳和一个具有至少一个金属的印制线路的基底。从至少一个印制线路或一个设置在印制线路上的功率半导体器件的至少一个接触面出发壳外向外引出至少一个接头元件。
至少其中一个接头元件设计为接触弹簧,该接触弹簧具有一个销钉状的第一接触装置、一个弹簧段和一个第二接触装置。外壳具有一个槽,用于安置接触弹簧,此槽具有一个第一和一个第二分槽,其中第二分槽的直径小于销钉状的第一接触装置的直径与由该第一接触装置的一个变形部确定的偏移之和。按本发明所述的变形部设置在分槽与基底之间。
附图说明
下面借助图1至6的实施例进一步说明本发明的方案。
图1一个按现有技术的功率半导体模件和带有一个接触弹簧。
图2按本发明的功率半导体模件的接触弹簧的第一种设计。
图3按本发明的功率半导体模件的接触弹簧的第二种设计。
图4按本发明的功率半导体模件的槽的第一种设计。
图5按本发明的功率半导体模件的槽的第二种设计。
图6按本发明的功率半导体模件的槽的第三种设计。
具体实施方式
图1示出一个按现有技术的功率半导体模件1。此功率半导体模件1具有一块底板2和一些设置在底板上的基底5,优选设计为DCB(directcopper bonding)的基底。相应的基底5具有一块绝缘陶瓷52,该绝缘陶瓷两侧具有金属叠层54、56。在功率半导体模件1的内部的金属叠层54通过结构化形成多个印制线路54,用于安置借助引线连接装置62按电路正确连接的功率半导体器件60并用作接头元件4、7的接触面。
图中示出的功率半导体模件1具有底板2和一个包围多个基底5的外壳3。外壳3具有多个通孔或槽30,用于对外连接的接头元件4、7。图中还示出了形式上为平面金属成形体的负载接头元件4以及形式上为接触弹簧70的辅助接头元件7。
这些接触弹簧70具有一个用于触点接通印制线路或也用于没有在图中示出的功率半导体器件的接触面的第一接触装置、一个弹簧段和一个用于对外连接的第二接触装置(见图2)。
此图示出功率半导体模件1作为范例的设计,下面以此为基础的按本发明的设计也适用于功率半导体模件的另一些结构,例如没有底板、具有其他方案的基底或不同的外壳结构。特别是在功率较小的功率半导体模件中,优于不仅可以如这里所示出的那样设计辅助接头,而且也可以设计具有接触弹簧的负载接头。
图2示出按本发明的功率半导体模件1的接触弹簧70的第一种设计,它具有一个第一接触装置72、一个弹簧段74和一个第二接触装置76。在这里接触弹簧70按本发明进一步设计为,使其具有直径DF的第一接触装置72具有一个弧形的变形部720。通过所述变形部确定该接触装置72的偏移A。
图3示出按本发明的功率半导体模件1的接触弹簧70的第二种设计。在这里接触弹簧70按本发明进一步设计为,使其具有直径DF的第一接触装置72在一个平面内具有一个S形的变形部722。由此通过两个优选相同的分偏移1/2A确定该接触装置的偏移A。
图4示出按本发明的功率半导体模件1的槽30和设置在其中的接触弹簧70的第一种设计。槽30是外壳3的组成部分并设计为,在其面朝功率半导体模件外部的第一分槽32内安置弹簧段74及第二接触装置76的主要部分。销钉状设计的第一接触装置72穿过外壳3的槽30的一个第二分槽34伸向在印制线路54或图中没有示出的功率半导体器件60上的接触部位。在槽30下部的区域内安置第一接触装置72的S形变形部722。
这两个分偏移722(见图3)在这里设计为,使得接触装置72的直径DF与两个分偏移1/2A之和大于第二分槽34的直径D。因此接触弹簧70通过一定的力可以朝基底5的方向插入到功率半导体模件1中,而不会由于其自重而重新掉出。
图5示出按本发明的功率半导体模件1的槽30和设置在其中的接触弹簧70的第二种设计。槽30仍是外壳3的组成部分并设计为,在其面朝功率半导体模件1外部的第一分槽内安置弹簧段74及第二接触装置76的主要部分。销钉状设计的第一接触装置72穿过外壳3的槽30的一个第二分槽34伸向在印制线路54上的接触部位。在第二分槽34下部的区域内安置第一接触装置72的弧形变形部720。
槽30的另一个直径大于第二分槽的延伸段36再进一步朝基底5的方向延伸,以满足例如对在功率半导体模件1内部的空气和漏电距离方面的电学要求。
分偏移720(见图2)在这里设计为,使得接触装置72的直径DF与偏移A之和大于第二分槽34的直径D。因此接触弹簧70通过一定的力可以朝基底5的方向插入到功率半导体模件1中,而不会由于其自重而重新掉出。
图6示出按本发明的功率半导体模件1的槽30和设置在其中的接触弹簧70的第三种设计。作为外壳3的组成部分的槽30仍设计为,在其面朝功率半导体模件1外部的第一分槽32内安置弹簧段74及第二接触装置76的主要部分。
销钉状设计的第一接触装置72穿过外壳3的槽30的一个第二分槽34伸向在印制线路54上的接触部位。在分槽34下部的区域内,第一接触装置72的弧形变形部720无紧度地安置在另一个分槽38a内,该分槽的直径大于第二分槽34的直径。一个另外分槽38b与此分槽相连,该另外的分槽具有一个比第二分槽34小的直径并且用于相对于在印制线路54或功率半导体器件上的接触部位精确地导引第一接触装置。
分偏移720(见图2)在这里仍设计为,使得接触装置72的直径DF与偏移A之和大于第二分槽34的直径D。因此接触弹簧70通过一定的力可以朝基底5的方向插入到功率半导体模件1中,而不会由于其自重而重新掉出。
Claims (3)
1.功率半导体模件(1),具有一个外壳(3)、一个具有至少一个金属的印制线路(54)的基底(2)、和至少一个从一个印制线路(54)或一个设置在印制线路(54)上的功率半导体器件(60)的一个接触面向外引出的接头元件(4、7),其中,接头元件(7)设计为接触弹簧(70),该接触弹簧具有一个第一接触装置(72)、一个弹簧段(74)和一个第二接触装置(76),其中,外壳(3)具有一个槽(30),该槽具有一个第一和一个第二分槽(32、34),用于安置接触弹簧(70),接触弹簧的第一接触装置(72)设计为销钉状,并且第二分槽(34)的直径(D)小于销钉状的第一接触装置(72)的直径(DF)与由该第一接触装置(72)的一个变形部(720、722)确定的偏移(A)之和,并且其中,所述变形部(720、722)设置在第二分槽(34)与基底(5)之间。
2.按照权利要求1所述的功率半导体模件,其中,变形部(720)设计为弧形,并且由该变形部(720)的强度(Strke)确定偏移(A)。
3.按照权利要求1所述的功率半导体模件,其中,变形部(722)设计为在一个平面内S形的,并且每一个如此构成的分偏移(1/2A)等于偏移(A)的二分之一。
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JP4764979B2 (ja) * | 2004-06-08 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
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