JP2007027467A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2007027467A JP2007027467A JP2005208383A JP2005208383A JP2007027467A JP 2007027467 A JP2007027467 A JP 2007027467A JP 2005208383 A JP2005208383 A JP 2005208383A JP 2005208383 A JP2005208383 A JP 2005208383A JP 2007027467 A JP2007027467 A JP 2007027467A
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- external terminal
- heat spreader
- substrate
- semiconductor module
- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】
半導体素子4を搭載する基板1と、この基板1上に設けられたヒートスプレッダ2と、半導体素子4に電気的に接続される外部端子3とを備えており、ヒートスプレッダ2及び外部端子3を互いに機械的に連結して電気的に接続する手段を備えた。この連結接続手段が、ヒートスプレッダ2に設けられた孔部20と、この孔部20に外部端子3を差し込んだ状態でヒートスプレッダ3及び外部端子2を係止する手段とからなる。
【選択図】図1
Description
又、特にスイッチング機能をもつパワー半導体素子を搭載する半導体モジュールでは、スイッチング損失やスイッチングノイズを低減させるために、基板上の配線を短くし、低インピーダンス化及び低インダクタンス化することが望まれている。
10 伝熱ベース板
11 絶縁層
12 導体配線
2 ヒートスプレッダ
20 孔部
21 凹部
3 外部端子
31 凸部
4 半導体素子
5 金属ワイヤ
Claims (3)
- 半導体素子を搭載する基板と、該基板上に設けられたヒートスプレッダと、前記半導体素子に電気的に接続される外部端子とを備えており、前記ヒートスプレッダ及び前記外部端子を互いに機械的に連結して電気的に接続する手段を備えたことを特徴とする半導体モジュール。
- 前記連結接続手段が、前記ヒートスプレッダに設けられた孔部と、該孔部に前記外部端子を差し込んだ状態で前記ヒートスプレッダ及び前記外部端子を係止する手段とからなることを特徴とする請求項1に記載の半導体モジュール。
- 前記係止手段が、前記外部端子に設けられた弾性凸部と、前記孔部に設けられた凹部とからなり、前記孔部に前記外部端子を差し込む際、前記凸部の弾性変形によって前記凸部が前記凹部に係合して押圧するよう構成したことを特徴とする請求項2に記載の半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005208383A JP4570092B2 (ja) | 2005-07-19 | 2005-07-19 | 半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005208383A JP4570092B2 (ja) | 2005-07-19 | 2005-07-19 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027467A true JP2007027467A (ja) | 2007-02-01 |
JP4570092B2 JP4570092B2 (ja) | 2010-10-27 |
Family
ID=37787830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005208383A Expired - Fee Related JP4570092B2 (ja) | 2005-07-19 | 2005-07-19 | 半導体モジュール |
Country Status (1)
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JP (1) | JP4570092B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021286A (ja) * | 2007-07-10 | 2009-01-29 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012004226A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013084764A (ja) * | 2011-10-11 | 2013-05-09 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013102112A (ja) * | 2011-10-12 | 2013-05-23 | Fuji Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2014146845A (ja) * | 2014-05-20 | 2014-08-14 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2015029157A (ja) * | 2014-11-13 | 2015-02-12 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP2015084354A (ja) * | 2013-10-25 | 2015-04-30 | 京セラ株式会社 | 素子収納用パッケージおよびこれを備えた実装構造体 |
KR20150089609A (ko) * | 2014-01-28 | 2015-08-05 | 삼성전기주식회사 | 전력반도체 모듈 |
US11037848B2 (en) | 2017-12-19 | 2021-06-15 | Fuji Electric Co., Ltd. | Semiconductor module and semiconductor module manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7214966B2 (ja) | 2018-03-16 | 2023-01-31 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5999749A (ja) * | 1982-11-30 | 1984-06-08 | Toshiba Corp | 半導体装置 |
JP2004349486A (ja) * | 2003-05-22 | 2004-12-09 | Toyota Industries Corp | 非絶縁型半導体装置 |
-
2005
- 2005-07-19 JP JP2005208383A patent/JP4570092B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5999749A (ja) * | 1982-11-30 | 1984-06-08 | Toshiba Corp | 半導体装置 |
JP2004349486A (ja) * | 2003-05-22 | 2004-12-09 | Toyota Industries Corp | 非絶縁型半導体装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021286A (ja) * | 2007-07-10 | 2009-01-29 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012004226A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013084764A (ja) * | 2011-10-11 | 2013-05-09 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013102112A (ja) * | 2011-10-12 | 2013-05-23 | Fuji Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2016154258A (ja) * | 2011-10-12 | 2016-08-25 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2015084354A (ja) * | 2013-10-25 | 2015-04-30 | 京セラ株式会社 | 素子収納用パッケージおよびこれを備えた実装構造体 |
KR20150089609A (ko) * | 2014-01-28 | 2015-08-05 | 삼성전기주식회사 | 전력반도체 모듈 |
KR102041645B1 (ko) * | 2014-01-28 | 2019-11-07 | 삼성전기주식회사 | 전력반도체 모듈 |
JP2014146845A (ja) * | 2014-05-20 | 2014-08-14 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2015029157A (ja) * | 2014-11-13 | 2015-02-12 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
US11037848B2 (en) | 2017-12-19 | 2021-06-15 | Fuji Electric Co., Ltd. | Semiconductor module and semiconductor module manufacturing method |
Also Published As
Publication number | Publication date |
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JP4570092B2 (ja) | 2010-10-27 |
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