CN101859753B - 具有连接装置和内部接头元件的功率半导体模块 - Google Patents

具有连接装置和内部接头元件的功率半导体模块 Download PDF

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CN101859753B
CN101859753B CN201010143190.4A CN201010143190A CN101859753B CN 101859753 B CN101859753 B CN 101859753B CN 201010143190 A CN201010143190 A CN 201010143190A CN 101859753 B CN101859753 B CN 101859753B
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power semiconductor
contact
conductor belt
jockey
semiconductor modular
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CN101859753A (zh
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马库斯·克内贝尔
彼得·贝克达尔
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Semikron Electronics Co ltd
Semikron GmbH and Co KG
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Abstract

一种具有连接装置和内部接头元件的功率半导体模块，功率半导体模块具有至少一个功率半导体部件，功率半导体模块具有与功率半导体部件相接触的、由层复合体组成的连接装置，层复合体由至少一个面向功率半导体部件的、构成至少一个第一导体带的第一导电层和在层复合体中接下来的绝缘层以及在层复合体中再接下来的远离功率半导体部件的、构成至少一个第二导体带的第二层组成。此外，功率半导体模块具有至少一个内部接头元件，内部接头元件构成为具有第一接触区段和第二接触区段以及有弹性的区段的接触弹簧，此处第一接触区段具有与连接装置的第一导体带或第二导体带共同的接触面。根据本发明的功率半导体模块减少了引线接合连接部的数量。

Description

具有连接装置和内部接头元件的功率半导体模块
技术领域
本发明描述了一种具有内部连接装置的功率半导体模块，该连接装置构成为层复合体，该层复合体由多数个导电层组成，这些导电层从其那方面可以构成多数个导体带和在这些层之间布置的绝缘层。该连接装置有助于功率半导体部件彼此间的电连接或者到衬底的其它导体带的电连接。
背景技术
本发明的出发点是功率半导体模块，像功率半导体模块例如由DE103 55 925 A1公知的那样。它原则上公开了一种上述类型的连接装置。这里借助于超声波焊接将功率半导体部件与第一导电层持久地可靠地电连接。功率半导体元件的模块内部的符合线路要求的连接部在这里敞开地放置，该连接部既包括内部的负载接头又包括控制器接头。为此，连接装置具有在导电层之间穿过绝缘层的穿通接触部。以这种方式将一层的导体带与另一层的导体带电连接。
例如DE 10 2006 027 482 A1公开了所称类型的功率半导体模块的外部连接装置。此处一方面公开的是螺纹接触连接部且另一方面公开的是弹簧加载的插塞接触连接部。
与此相对的是，DE 10 2006 013 078公开了一种具有上述连接装置的功率半导体模块，在该功率半导体模块中，借助于薄引线接合来构成两个导电层之间的穿通接触部。因为所称类型的连接装置还应当用于代替功率半导体模块内的接合连接，并且应当通过它们的使用来改善内部连接部的抗疲劳强度，所以在这里用于构成穿通接触部的薄引线接合连接的使用可能不完全令人满意。
发明内容
因此，本发明的任务在于，通过如下方式进一步形成一种具有连接装置的功率半导体模块，即，减少引线接合连接部的数量。
根据本发明，本任务通过权利要求1所述的方法来解决。优选的实施方式在从属权利要求中描述。
本发明的思想以开头所称类型的功率半导体模块为出发点，该功率半导体模块具有至少一个功率半导体部件以及连接装置，该连接装置用于将至少一个功率半导体部件与另一功率半导体部件或与衬底的导体带进行符合线路要求的模块内部的连接。优选借助于衬底可以将这种功率半导体模块布置在冷却装置上。此外，这种功率半导体模块优选具有绝缘的、包围带有至少一个功率半导体部件的衬底和连接装置的壳体。
连接装置由层复合体组成，该层复合体由至少两个导电层和布置在这些导电层之间的绝缘层组成。优选的是还可以设置由连接装置的绝缘层和导电层组成的其它层状序列。在不限制普遍性的情况下，出于清楚明了的原因，下面仅还涉及具有两个导电层和一个绝缘层的连接装置的最简单的方案。
相应的导电层可以自身结构化并且由此形成多数个彼此绝缘的第一导体带。第一导电层的至少一个第一导体带与功率半导体部件的接触面导电连接。此处，材料配合的连接或者还有压力接触连接根据现有技术被证实是特别具有优点的。在层状序列中，在面向功率半导体部件的该第一导电层之后是连接装置的绝缘层，并且邻接的再是连接装置的远离功率半导体部件的导电层。
根据本发明，功率半导体部件具有至少一个内部接头元件，其中，该内部接头元件构成为具有第一和第二接触区段以及有弹性的区段的接触弹簧。该接触弹簧的第一接触区段具有与连接装置的第一或第二导体带共同的接触面。
此处优选的是，与第一或第二导体带的接触面布置在连接装置的凹隙中。由此提高了导体带与接触弹簧之间的接触可靠性，即使是在机械影响或热影响下，这些影响会引起整个接触弹簧或者接触弹簧的第一接触装置横向运动。由此还简化了在壳体中对接触弹簧的可能的固定和引导，这是因为必须满足对接触弹簧或其第一接触区段的定位的这些低的要求。
在第一优选构造方案中，通过第二导体带的和绝缘层的空隙形成该凹隙。于是出现了连接装置的开口，该开口以穿过的方式到达第一导体带，由此接触面因此布置在该第一导体带上并且接触弹簧因此建立到该第一导体带的导电连接。
在第二优选的构造方案中，通过第二导体带的凹陷部形成该凹隙，该凹陷部没有完全切穿该导体带，由此将接触面布置在第二导体带上，并且接触弹簧因此建立到该第二导体带的导电连接。
此外特别具有优点的是，接触弹簧的第二接触装置从功率半导体模块的壳体中突出。由此功率半导体模块并且因此连接装置可以与外部接头元件直接连接。
附图说明
结合图1至4的实施例来进一步阐述本发明的解决方案。
图1示出根据现有技术的功率半导体模块的剖面图。
图2示出根据现有技术的功率半导体模块的连接装置的详图。
图3示出根据本发明的功率半导体模块的连接装置的详图。
图4示出根据本发明的功率半导体模块的剖面图。
具体实施方式
图1示出根据现有技术的功率半导体模块的剖面图。显示出的是，功率半导体模块布置在冷却装置76上，其中，功率半导体模块具有带有功率半导体部件10和连接装置20的衬底74。功率半导体模块的这些部分10、20、74由壳体70包围并覆盖。这里衬底74构成功率半导体模块的下面的连接部。
连接装置20通过层状序列来形成，该层状序列由面向功率半导体部件10的第一导电层22、在层状序列中邻接在这里的绝缘层24和第二导电层26组成。优选的是，导电层22、26的层厚度为10μm至500μm之间，而绝缘层24的层厚度为2μm至100μm之间。
导电层22、26根据现有技术形成功率半导体部件10和衬底74的模块内部的符合线路要求的连接部并且以此代替各种公知的引线接合连接部。当然此处也有必要的是，设置用于将第一导电层的第一导体带22与第二导电层的第二导体带26连接起来的穿通接触部90。该穿通接触部90构成为绝缘层的导电式填充的凹隙。
此外，这里连接装置20有助于以带有外部接头元件80的螺纹连接部82、84形式出现的外部接触部。外部接触部的类型特别适用于负载接头。辅助接头(如控制器接头、辅助发射器接头或传感器接头)的外部接触部也作为插塞连接部或钎焊连接部而公知。
图2示出根据现有技术的具有控制器接头区域14和发射器接头区域16的功率半导体模块10的连接装置。这里显示出的是上述(参见图1)穿通接触部90的供选方案。在该公知的构造方案中，部分布置在连接装置20的凹隙40中的薄引线接合连接部92形成连接装置的第一导电层的第一导体带22与第二导电层的第二导体带26之间的导电连接。
图3示出根据本发明的功率半导体模块的连接装置20、功率半导体部件10和传感器50的详图。功率半导体部件10，在这里是功率晶体管，在其第一主体面12上具有两个接触区域：一个控制器接头区域14和一个发射器接头区域16。这两个接触区域14、16与连接装置20的第一层的配属的并且理所当然彼此电绝缘的第一导体带22连接。特别优选的是，这两个连接构造为材料配合的连接，优选通过烧结工艺来建立。
这里连接装置20具有三个彼此电绝缘的第一导体带22，这些第一导体带22通过将第一导电层结构化而形成。该第一层形成连接装置20的面向功率半导体部件10的面。此外，连接装置20具有两段绝缘层24。然后在连接装置20的层构造中，该连接装置20的第二导电层接到连接装置20的远离功率半导体部件10的侧上，同样将该第二导电层结构化，并且因此具有两个彼此电绝缘的第二导体带22。
借助于封装的或者还未封装的传感器50的接头元件52将封装的或者还未封装的传感器50与这些第二导体带26之一导电连接。该传感器50有助于在功率半导体模块中进行测量，例如电流测量或温度测量。功率半导体模块具有第一内部接头元件30用于其外部连接。该第一内部接头元件30构成为具有第一接触区段32和第二接触区段36以及有弹性的区段34的接触弹簧30。第一接触区段32与配属的第二导体带26导电接触，并且为此具有与该第二导体带26共同的接触面62。
该接触面62布置在第二导体带22的凹隙42中，其通过第二导体带22的凹陷部而构成。接触弹簧30的第一接触区段32可以不同方式地构成，当然在这里重要是构成第二导体带26的凹陷部42。通过该凹陷部42基本上阻止了接触弹簧30的第一接触区段32的由机械作用或热作用造成的横向运动。
这种效果通过凹隙40来实现，绝缘层24以及第二导电层的相叠的区域通过空隙形成该凹隙40。该空隙通过如下方式构成，即，由此形成的凹隙40穿过连接装置到达第一导电层上。
因此布置在该凹隙40中的接触弹簧30在接触面60上与该第一导体带22接触，该第一导体带22与功率半导体部件10的控制器接头14连接。因此，通过内部接头元件，即接触弹簧30，能够进行对功率半导体部件10的直接控制。此处特别具有优点的是，第二接触区段36可以直接与外部引线连接。
图4示出根据本发明的功率半导体模块的剖面图，该功率半导体模块具有布置在冷却装置76上的衬底74和进行包围的壳体70。借助于所述的连接装置20构成模块内部的符合线路要求的连接。仅示出其中的内部接触装置接触弹簧30，这些内部接触装置布置在杯形的壳体70的引导部中，其中，这些接触弹簧30的第二接触区段36从壳体70中突出，并且直接与外部接头元件(例如控制电路板)连接。

Claims (5)

1.功率半导体模块，所述功率半导体模块具有至少一个功率半导体部件（10），所述功率半导体模块具有与所述功率半导体部件（10）相接触的由层复合体组成的连接装置（20），所述层复合体由至少一个面向所述功率半导体部件（10）的、构成至少一个第一导体带（22）的第一导电层；在所述层复合体中接下来的绝缘层（24）和在所述层复合体中再接下来的远离所述功率半导体部件（10）的、构成至少一个第二导体带（26）的第二层组成，并且所述功率半导体模块具有至少一个内部接头元件（30），其中，所述内部接头元件构成为具有第一接触区段（32）和第二接触区段（36）以及有弹性的区段（34）的接触弹簧（30），其中，所述第一接触区段（32）具有与所述连接装置（20）的第一导体带（22）或第二导体带（26）共同的接触面（60、62），
其中，与第一导体带（22）或第二导体带（26）的所述接触面（60、62）布置在所述连接装置（20）的凹隙（40、42）中，
其中，通过所述第二导体带（26）的和所述绝缘层（24）的空隙形成所述凹隙（40），作为开口，并且所述接触面（60）因此布置在所述第一导体带（22）上，或者
其中，通过所述第二导体带（26）的凹陷部形成所述凹隙（42），并且所述接触面（62）因此布置在所述第二导体带（26）上。
2.根据权利要求1所述的功率半导体模块，其中，所述导电层（22、26）的层厚度为10μm至500μm之间，而所述绝缘层（24）的层厚度为2μm至100μm之间。
3.根据权利要求1所述的功率半导体模块，其中，所述至少一个功率半导体部件（10）布置在衬底（74）上，并且所述功率半导体模块具有壳体（70），所述壳体（70）包围并覆盖带有所述至少一个功率半导体部件（10）的所述衬底（74）和在壳体（70）中的所述连接装置（20）。
4.根据权利要求3所述的功率半导体模块，其中，所述内部接头元件（30）部分地布置在所述功率半导体模块的所述壳体（70）的引导部（72）中，并且所述内部接头元件（30）的所述第二接触区段（36）从所述壳体（70）中突出并且能够在那里与外部接头元件连接。
5.根据权利要求1所述的功率半导体模块，其中，所述连接装置（20）的至少一个第一导体带（22）与所述功率半导体部件（10）的至少一个接头区域（14、16）连接，并且这种连接被构造为材料配合的连接或者压力接触连接。
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