JP2010251749A - 接続装置を有し且つ接触ばねとして形成されている内部端子要素を有するパワー半導体モジュール - Google Patents
接続装置を有し且つ接触ばねとして形成されている内部端子要素を有するパワー半導体モジュール Download PDFInfo
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Abstract
【解決手段】 本発明は、少なくとも1つのパワー半導体構成要素と接続装置とを有するパワー半導体モジュールについて述べている。この接続装置は、パワー半導体構成要素と接触を成し、層結合から成っている。この層結合は、パワー半導体構成要素に面し少なくとも1つの第1導体パスを形成している少なくとも1つの第1導電層と、層結合で連続している絶縁層と、層結合で更に連続しパワー半導体構成要素に対向し少なくとも1つの第2導体パスを形成している第2層とから成っている。更に、パワー半導体モジュールは少なくとも1つの内部端子要素を有し、この内部端子要素は、第1接触部分と第2接触部分とばね部分とを有する接触ばねとして形成されている。この場合は、第1接触部分は、接続装置の第1導体パス或いは第2導体パスによる共通の接触面を有している。
【選択図】 図3
Description
12 主要面
14 制御端子領域
16 エミッタ端子領域
20 接続装置
22 第1導電層、第1導体パス
24 絶縁層
26 第2導電層、第2導体パス
30 端子要素、接触ばね
32 第1接触部分
34 ばね部分
36 第2接触部分
40 リセス
42 リセス、窪み
50 検知部
52 接続要素
62 接触面
70 ハウジング
72 案内部
74 基板
76 冷却装置
80 端子要素
82、84 ねじ接続
90 通過接触部
92 ワイヤボンディング接続
Claims (8)
- 少なくとも1つのパワー半導体構成要素(10)を有し且つこのパワー半導体構成要素(10)と接触している接続装置(20)を有し且つ少なくとも1つの内部端子要素(30)を有するパワー半導体モジュールであって、前記接続装置(20)は、パワー半導体構成要素(10)に面し且つ少なくとも1つの第1導体パス(22)を形成している少なくとも1つの第1導電層と、層結合で連続する絶縁層(24)と、層結合で更に連続するパワー半導体構成要素(10)に対向し且つ少なくとも1つの第2導体パス(26)を形成している第2層とから成る層結合から成り、前記内部端子要素は、第1接触部分(32)と第2接触部分(36)とばね部分(34)とを有する接触ばねとして形成され、
この第1接触部分(32)は、接続装置(20)の第1導体パス(22)或いは第2導体パス(26)による共通の接触面(60、62)を有しているパワー半導体モジュール。 - 第1導体パス(22)或いは第2導体パス(26)による接触面(60、62)が、接続装置(20)のリセス(40、42)に配されている、請求項1に記載のパワー半導体モジュール。
- 前記リセス(40)が第2導体パス(26)と絶縁層(24)との切除部により形成され、これにより接触面(60)が第1導体パス(22)に配されている、請求項2に記載のパワー半導体モジュール。
- 前記リセス(42)が第2導体パス(26)の窪みにより形成され、これにより接触面(62)が第2導体パス(26)に配されている、請求項2に記載のパワー半導体モジュール。
- 導電層(22、26)の層厚が10μm〜500μmの間であり、絶縁層(24)の層厚が2μm〜100μmの間である、請求項1に記載のパワー半導体モジュール。
- 少なくとも1つのパワー半導体構成要素(10)が基板(74)に配され、パワー半導体モジュールがハウジング(70)を有し、このハウジング(70)が、少なくとも1つのパワー半導体構成要素(10)と接続装置(20)と共に基板(74)をハウジング(70)に取り囲み且つ被覆している、請求項1に記載のパワー半導体モジュール。
- 内部端子要素(30)が、パワー半導体モジュールのハウジング(70)の案内部(72)に部分的に配され、内部端子要素(30)の第2接触部分(36)がハウジング(70)から突出し、そこで外部端子要素と接続可能である、請求項6に記載のパワー半導体モジュール。
- 接続装置(20)の少なくとも1つの第1導体パス(22)が、パワー半導体構成要素(10)の少なくとも1つの端子領域(14、16)と接続され、この接続が、材料結合接続として或いは押圧接触接続として形成されている、請求項1に記載のパワー半導体モジュール。
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DE102009024385B4 (de) * | 2009-06-09 | 2011-03-17 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul mit einer Verbindungseinrichtung |
KR101443980B1 (ko) * | 2012-11-27 | 2014-09-23 | 삼성전기주식회사 | 접속핀 및 이를 갖는 전력 모듈 패키지 |
DE102013111422A1 (de) | 2013-10-16 | 2015-04-30 | Osram Oled Gmbh | Optoelektronisches Bauelement, Kontaktiervorrichtung und optoelektronische Baugruppe |
DE102014115812B4 (de) * | 2014-10-30 | 2019-09-05 | Infineon Technologies Ag | Halbleitermodul und Halbleitermodulanordnung mit geringen Kriechströmen |
DE102014222189B4 (de) | 2014-10-30 | 2022-06-30 | Infineon Technologies Ag | Halbleiterbaugruppe und Leistungshalbleitermodul |
DE102016107083B4 (de) * | 2016-04-18 | 2019-05-23 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung und Fahrzeug hiermit |
DE102019117476B4 (de) | 2019-06-28 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung mit einem Anschlusselement |
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DE102009017733B4 (de) | 2011-12-08 |
KR20100113034A (ko) | 2010-10-20 |
US8247899B2 (en) | 2012-08-21 |
JP5649321B2 (ja) | 2015-01-07 |
CN101859753A (zh) | 2010-10-13 |
DE102009017733A1 (de) | 2010-10-21 |
KR101709786B1 (ko) | 2017-03-08 |
CN101859753B (zh) | 2014-06-04 |
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EP2239768A1 (de) | 2010-10-13 |
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