JP5018013B2 - 樹脂封止半導体装置 - Google Patents
樹脂封止半導体装置 Download PDFInfo
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- JP5018013B2 JP5018013B2 JP2006289888A JP2006289888A JP5018013B2 JP 5018013 B2 JP5018013 B2 JP 5018013B2 JP 2006289888 A JP2006289888 A JP 2006289888A JP 2006289888 A JP2006289888 A JP 2006289888A JP 5018013 B2 JP5018013 B2 JP 5018013B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000011347 resin Substances 0.000 title claims description 24
- 229920005989 resin Polymers 0.000 title claims description 24
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 229920001721 polyimide Polymers 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000005452 bending Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
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- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Description
しかし、ワイヤボンディングによる接続では、サージ電流のような大電流が流れた際に溶断し断線してしまうという問題点があり、また、サージ電流のような大電流が流れなくても、装置の動作による温度変化を繰り返すことによってワイヤが伸縮し、その応力から生じる金属疲労によってワイヤが断線してしまうという問題点があった。
図4は従来の樹脂封止半導体装置の構成図であり、同図(a)は要部断面図、同図(b)は同図(a)のC部拡大図である。
樹脂封止半導体装置100は、半導体チップ104の下面が接続されるリード端子102、及び半導体チップの上面が接続されるリード端子101が一対で形成され、それらのリード端子101、102の間に半導体チップを配置し、半田103、105で接続するものである。尚、図中の符号で、104aは上面電極、104bは下面電極、104cは酸化膜、104dはポリイミド膜、104eはシリコン基板、107は上面電極露出部である。
特許文献1において、リード端子の上面に半導体チップを半田付けし、補助リード端子を狭幅部において屈曲させて形成した段差部を半導体チップの酸化膜との接触を避けつつ、半導体チップの上面電極に半田付けし、補助リード端子と半田つけすることで、半導体チップの電極部以外への半田付着を防止し、半導体素子の信頼性を向上させることが記載されている。
この発明の目的は、前記の課題を解決して、耐湿信頼性を向上できる樹脂封止半導体装置を提供することである。
また、前記導電性接合材が半田であるとよい。
補助端子2は、導電性を有する金属等で構成された厚さ0.1〜0.3mmの板であり、ここで使用される板は長方形ではなく、その一部の横幅が、図2に示される半導体チップ6の上面電極6aのポリイミド膜6dが形成されていない金属露出部幅と略同一になるように構成された形状の板が用いられる。
なお、下面側端子3,補助端子側端子4、及び補助端子2に用いる材質としては、導電性を有し、ある程度の機械的強度が保持でき、酸化、半田のフラックス等による耐腐食性を有するものであれば、特に制限なく使用できる。
このように配置することによって、下面側端子3の1平面と同一平面上に配置されない補助端子側端子4の1平面の末端の下面が、半田9によって半田付けされる。
また、この凸部2aがあるため補助端子2と半導体チップ6の外周部を被覆するポリイミド膜6dとの直接接触が防止され耐圧低下を防ぐことができる。ここでは、凸部の高さHを0.06mmしたので、上面電極露出部10と補助端子2の間隔は0.06mmである。
同図(c)において、半導体チップ6の上下面には、下面側端子3、補助端子側端子4を接続するための上面電極6a及び下面電極6bが形成されている。また、電極が形成さ
れていない部分には絶縁層(第1絶縁膜)である酸化シリコン膜等の酸化膜6c(窒化膜の場合もある)が形成され外部との耐圧を保ち、なおかつ酸化膜6c上と、酸化膜6cと上面電極6aとの境界部を覆うように第2絶縁膜としてポリイミド膜6dが形成される。上述したように、上面電極6aの上部には、上面電極6aからはみ出さないように半田7が配置され、さらにその上部には補助端子2が配置される。半田7の高さは、前記したように補助端子2に形成された凸部2aの高さHと同じになり確実に確保される。この凸部2aの形状は例えば円柱状になっている。このようにすることにより、上面電極6aと接触する半田7の量を適正化して、補助端子2を上面電極6aに半田付けすることができる。また、上述したように、下面電極6bは下面側端子3の上面に半田8によって半田付けされる。
ポリイミド膜6dが形成されていない上面電極6aの幅、すなわち上面電極露出部10の幅Lは半導体チップ6の幅Wに対して45%、50%、60%、70%の範囲とし、(上面電極露出部10の面積(L2)−凸部2aの面積)×0.06mmを100とした場合、半田体積を65〜170まで9種類選んで実験を行った。ここで0.06mmは半田7の高さ(すなわち上面電極露出部と補助端子の間の距離=凸部2aの高さH)である。実験の結果、上面電極露出部の幅Lに関係なく半田体積を90〜150とすることで、漏れ電流を初期値に対して2倍以下に抑えることができて、耐湿信頼性を向上することができる。
また、ここでは半田の高さとなる凸部の高さHが0.06mmの場合について説明したがこれに限るものではない。凸部の高さHおよび上面電極露出部10の面積が任意の場合には、(上面電極露出部10の面積−凸部面積)×(上面電極露出部10と補助端子2の間の距離=凸部の高さH)を100とし、半田体積(半田7の体積)を90〜150とすることで、漏れ電流を初期値に対して2倍以下に抑えることができて、耐湿信頼性を向上することができる。また、凸部2aの形状が底面と上面で面積が異なる場合には、(上面電極露出部10の面積)×(上面電極露出部10と補助端子2の間の距離=凸部の高さH)−凸部体積を100とすればよい。
また、前記の説明は補助端子2と補助端子側端子4が半田9で接続される場合を示したが、補助端子2と補助端子側端子4が一体となっている場合には凸部の高さHに相当する隙間を確保できるので、凸部2aは必ずしも補助端子2に形成しなくてもよい。その場合は(上面電極露出部の面積)×(上面電極露出部と補助端子の間の距離)で算出した体積を100とするとよい。
また、前記樹脂封止半導体装置の樹脂5の外形は縦×横が2.5mm×4.0mm程度で厚さが1.2〜1.6mmであり、下面側端子3、補助端子側端子4の樹脂5からはみ出した長さ(各0.5mm)を含めた横の長さが5.0mm程度である。
2 補助端子
2a 凸部(ダボ)
3 下面側端子
4 補助端子側端子
5 樹脂
6 半導体チップ
6a 上面電極
6b 下面電極
6c 酸化膜
6d ポリイミド膜
6e シリコン基板
7、8、9 半田
10 上面電極露出部
W 半導体チップの幅
L 上面電極露出部の幅
H 凸部の高さ
Claims (4)
- 半導体チップが樹脂で封止される樹脂封止半導体装置において、前記半導体チップの上面に形成され第1開口部を有する第1絶縁膜と、前記第1開口部を介して前記半導体チップの上面と電気的に接続する上面電極と、前記第1絶縁膜上と、前記第1絶縁膜と前記上面電極との境界部を覆うように形成され第2開口部を有する第2絶縁膜と、前記第2開口部から露出する上面電極露出部と導電性接合材を介して電気的に接続する接続導体とを有し、前記導電性接合材は、前記第2開口部と、前記上面電極からはみ出さないように前記第2絶縁膜を覆うとともに、前記上部電極露出部から前記接続導体までの距離に前記上部電極露出部の面積を乗じた体積を100とし、前記導電性接合材の体積を90〜150とすることを特徴とする樹脂封止半導体装置。
- 前記接続導体は、前記上面電極部に向かって突出する凸部を有し、前記電極露出部から前記接続導体の前記凸部以外の部分までの距離に前記上部電極露出部の面積を乗じた体積から、前記凸部の体積を減じた体積を100とすることを特徴とする請求項1に記載の樹脂封止半導体装置。
- 前記導電性接合材が半田であることを特徴とする請求項1または2に記載の樹脂封止半導体装置。
- 前記第1絶縁膜が酸化膜もしくは窒化膜であり、前記第2絶縁膜がポリイミド膜であることを特徴とする請求項1〜3のいずれか一項に記載の樹脂封止半導体装置。
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JP5018013B2 true JP5018013B2 (ja) | 2012-09-05 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5270614B2 (ja) * | 2010-05-24 | 2013-08-21 | 三菱電機株式会社 | 半導体装置 |
JPWO2013047533A1 (ja) * | 2011-09-29 | 2015-03-26 | シャープ株式会社 | 半導体装置 |
CN104247012B (zh) | 2012-10-01 | 2017-08-25 | 富士电机株式会社 | 半导体装置及其制造方法 |
JP6878930B2 (ja) * | 2017-02-08 | 2021-06-02 | 株式会社デンソー | 半導体装置 |
CN110199387B (zh) * | 2017-02-20 | 2024-03-01 | 新电元工业株式会社 | 电子装置以及连接件 |
JP7292352B2 (ja) * | 2021-11-02 | 2023-06-16 | 三菱電機株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
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JPH0653270A (ja) * | 1991-09-13 | 1994-02-25 | Hitachi Ltd | 半導体装置 |
JP3274126B2 (ja) * | 2000-05-26 | 2002-04-15 | 東芝コンポーネンツ株式会社 | コネクター型半導体素子 |
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