JP2003234382A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003234382A
JP2003234382A JP2002029127A JP2002029127A JP2003234382A JP 2003234382 A JP2003234382 A JP 2003234382A JP 2002029127 A JP2002029127 A JP 2002029127A JP 2002029127 A JP2002029127 A JP 2002029127A JP 2003234382 A JP2003234382 A JP 2003234382A
Authority
JP
Japan
Prior art keywords
adhesive
conductive
semiconductor chip
conductive foil
conductive adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002029127A
Other languages
English (en)
Inventor
Takahiro Onishi
高弘 大西
Masaki Fukumura
昌己 福村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP2002029127A priority Critical patent/JP2003234382A/ja
Publication of JP2003234382A publication Critical patent/JP2003234382A/ja
Pending legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/181—Encapsulation

Abstract

(57)【要約】 （修正有） 【課題】大電流に適した信頼性の高い半導体装置を提供
する。 【解決手段】半導体チップ２と、半導体チップを支持す
るリードフレーム１と、半導体チップとリードフレーム
とを接続する導電箔３とを有する半導体装置において、
半導体チップと導電箔との接続には導電性接着剤４を用
い、且つ導電性接着剤の周囲は、導電性接着剤よりも接
着強度の高い絶縁性を有する接着剤８にて囲繞されてい
る。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、特に大電流に適し
た半導体装置の内部構造に関するものである。
【０００２】
【従来の技術】図３に従来例の半導体装置を示す。図3
(a)は従来例の平面図、図3(b)は従来例の断面図であ
る。図において1はリードフレーム、1aはリード端子、2
は半導体チップ、3は導電箔、4は導電性接着剤、5はワ
イヤ、6は電極、7は封止樹脂である。
【０００３】従来の半導体装置は、リードフレーム1上
に半導体チップ2が搭載され、リード端子1aと半導体チ
ップ2との接続は、導電箔3の架橋により行われている。
導電箔3は幅が広く、導電性が高いので大電流での使用
に適している。導電箔3とリード端子1aとの接続は、半
田付けにより行われている。一方、導電箔3と半導体チ
ップ2との接続は、半導体チップ2と導電箔3の間に、導
電性接着剤4を塗布することで行っている。本従来例で
は、導電性接着剤4は主に銀ペーストを用いられてお
り、半導体チップ2は主にシリコンからなり、導電箔3は
銅を用いている。また、電極6はワイヤ5の架橋により、
リード端子1aと接続されている。リードフレーム1の一
部、半導体チップ2、導電箔3、導電性接着剤4、ワイヤ
5、電極6は封止樹脂7によって封止され、外部からの粉
塵や湿気などから保護されている。
【０００４】しかし、従来例の半導体装置では、シリコ
ンからなる半導体チップ2と銅からなる導電箔3が導電性
接着剤4にて接続されているが、シリコンの熱膨張係数
は約3×10-6/℃で銅の熱膨張係数は約17×10-6/℃なの
で、銅の熱膨張係数はシリコンと比べて5倍以上も大き
い。そのため、大電流が導電箔3に流れて導電箔3が発熱
すると、導電箔3は発熱に伴い膨張してベンディングす
る。その時に、導電性接着剤も導電箔3のベンディング
に伴い変形するが、シリコンチップ2から剥離してしま
う。また、応力が掛かって主に導電性接着剤4の端部が
クラックすることもあった。
【０００５】また、従来の半導体装置は主に大電流を印
加するために用いられるので、導電箔3の大電流に伴う
発熱量が多く、導電性接着剤4が高熱により融解して溶
け出し、融解して流出した導電性接着剤4が電極6にまで
達する怖れがあった。
【０００６】
【発明が解決しようとする課題】本発明は、上記問題に
鑑みてなされたものであり、大電流により素子が発熱し
ても、ベンディングによる応力に耐え、導電性接着剤が
融解しても電極に流出することがなく、信頼性の高い半
導体装置を提供するものである。高接合強度接着剤が高
熱伝導接着剤を囲むごとく設けられ、半導体チップをリ
ードフレームに固定する構造は、特開2001-351929に開
示されているが、特開2001-351929は半導体チップとリ
ード端子の接続はワイヤにより行われているため、大電
流での使用には適さない。
【０００７】
【課題を解決するための手段】請求項1の発明は、半導
体チップと半導体チップを支持するリードフレームと前
記半導体チップと前記リードフレームとを接続する導電
箔を有する半導体装置において、前記半導体チップと前
記導電箔との接続には導電性接着剤を用い、且つ前記導
電性接着剤の周囲は、前記導電性接着剤よりも接着強度
の高い絶縁性を有する接着剤にて囲繞することで、ベン
ディングの応力に耐え、導電性接着剤が融解しても前記
絶縁性を有する高接着性接着剤が流出を防御するので、
信頼性の高い半導体装置を提供することを可能にした。
【０００７】請求項２の発明は、導電箔に導電性接着剤
と接する部分に凹みを設け、導電箔とシリコンチップと
の距離を短くすることで、電流の損失を減らし効率を向
上させると共に、発熱時の応力を緩和することを可能に
した。
【０００８】
【実施の形態】以下、本発明の実施の形態を図面に基い
て説明する。図１(a)は本発明の平面図、図１(b)は本発
明の断面図である。図2は本発明の絶縁性高接着性接着
剤の一例である。図において、1はリードフレーム、2は
半導体チップ、3は導電箔、4は導電性接着剤、5はワイ
ヤ、6は電極、7は封止樹脂、8は絶縁性接着剤である。
【０００９】本発明の半導体装置は、リードフレーム1
上に半導体チップ2が搭載され、リード端子1aと半導体
チップ2との接続は、導電箔3の架橋により行われてい
る。導電箔3は幅が広く、導電性が高いので大電流での
使用に適している。導電箔3は図1に示すように、接続部
の中心が窪んだ形状に加工されている。導電箔3とリー
ド端子1aとの接続は、半田付けにより行われている。
【００１０】一方、導電箔3と半導体チップ2との接続
は、半導体チップ2と導電箔3の間に、導電性接着剤4を
塗布することで行っている。更に導電性接着剤4の周り
を、絶縁性接着剤8が囲繞している。本実施例では、導
電性接着剤4は主に銀ペーストを用いられており、半導
体チップ2は主にシリコンからなり、導電箔3は銅を用い
ている。絶縁性接着剤8は樹脂などの絶縁性に優れ、且
つ接着強度が導電性接着剤4よりも高いものを採用して
いる。絶縁性接着剤8はディスペンサー等で塗布するこ
とで形成しても良いし、また図２のようにリッド上に打
ち抜いたものを配置して固定する方法でも差し支えな
い。
【００１１】電極6はワイヤ5の架橋により、リード端子
1aと接続されている。リードフレーム1の一部、半導体
チップ2、導電箔3、導電性接着剤4、ワイヤ5、電極6は
封止樹脂7によって封止され、外部からの粉塵や湿気な
どから保護されている。
【００１２】本発明の半導体装置は、シリコンからなる
半導体チップ2と銅からなる導電箔3が導電性接着剤4に
て接続されているが、シリコンの熱膨張係数は約3×10
-6/℃で銅の熱膨張係数は約17×10-6/℃なので、銅の熱
膨張係数はシリコンと比べて5倍以上も大きい。そのた
め、大電流が導電箔3に流れて導電箔3が発熱すると、導
電箔3は発熱に伴い膨張してベンディングする。しか
し、導電箔3は導電性接着剤4に接着する部分が周囲より
も凹んで設けられているために、この時に発生する応力
は、導電性接着剤4を囲繞している絶縁性接着剤8に強く
掛かる。ところが、絶縁性接着剤8は強度が充分に強い
ので、応力に耐えることができ、クラックが生じること
はなくなった。更に、導電箔3は導電性接着剤4に接着す
る部分が周囲よりも凹んで設けられているために、半導
体チップ2との距離が短くなり、電流の損失を減らし効
率が向上するとともに、放熱も効率良く行うことができ
る。
【００１３】また、本発明の半導体装置は主に大電流を
印加するために用いられるので、導電箔3の大電流に伴
う発熱量が多く、導電性接着剤4が高熱により融解して
溶け出すことも有り得るが、例え導電性接着剤4が融解
して流出しても、導電性接着剤4を囲繞する絶縁性接着
剤8が導電性接着剤4の流出を堤防のごとく阻止するので
電極6にまで達する怖れはなくなった。
【００１４】
【発明の効果】本発明の効果としては、請求項1の発明
により、半導体チップと半導体チップを支持するリード
フレームと前記半導体チップと前記リードフレームとを
接続する導電箔を有する半導体装置において、前記半導
体チップと前記導電箔との接続には導電性接着剤を用
い、且つ前記導電性接着剤の周囲は、前記導電性接着剤
よりも接着強度の高い絶縁性を有する接着剤にて囲繞す
ることで、ベンディングの応力に耐え、導電性接着剤が
融解しても前記絶縁性を有する高接着性接着剤が流出を
防御するので、信頼性の高い半導体装置を提供すること
が可能になった。
【００１５】請求項２の発明により、導電箔に導電性接
着剤と接する部分に凹みを設けることで、導電箔とシリ
コンチップとの距離を短くし、電力効率を向上させ、放
熱を良くする事で、発熱時の応力を緩和することが可能
になり、信頼性の高い半導体装置を提供することが可能
になった。以上説明したように、本発明は産業上の利用
可能性大なるものである。
【図面の簡単な説明】
【図１】(a)本発明の平面図 (b)本発明の断面図
【図２】絶縁性高接着性接着剤の一例
【図３】(a)従来例の平面図 (b)従来例の断面図
【符号の説明】
１．リードフレーム 1a．リード端子 ２．シリコンチップ ３．導電箔 ４．導電性接着剤 ５．ワイヤ ６．電極 ７．封止樹脂 ８．絶縁性接着剤

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】半導体チップと半導体チップを支持するリ
    ードフレームと前記半導体チップと前記リードフレーム
    とを接続する導電箔を有する半導体装置において、前記
    半導体チップと前記導電箔との接続には導電性接着剤を
    用い、且つ前記導電性接着剤の周囲は、前記導電性接着
    剤よりも接着強度の高い絶縁性を有する接着剤にて囲繞
    されていることを特徴とする半導体装置。
  2. 【請求項２】前記導電箔は前記導電性接着剤と接する部
    分に凹みが設けられていることを特徴とする請求項１記
    載の半導体装置。
JP2002029127A 2002-02-06 2002-02-06 半導体装置 Pending JP2003234382A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
JP2003234382A true JP2003234382A (ja) 2003-08-22

Family

ID=27773572

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006040928A (ja) * 2004-07-22 2006-02-09 Nec Electronics Corp 半導体装置
JP2007095984A (ja) * 2005-09-29 2007-04-12 Hitachi Ltd 半導体モジュール
EP2677540A1 (en) * 2012-06-19 2013-12-25 Nxp B.V. Electronic device and method of manufacturing the same
EP3971959A1 (en) * 2020-09-18 2022-03-23 Littelfuse Semiconductor (Wuxi) Co., Ltd. Package structure for low-capacity tvs
JP2022053400A (ja) * 2020-09-24 2022-04-05 株式会社東芝 半導体モジュール

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006040928A (ja) * 2004-07-22 2006-02-09 Nec Electronics Corp 半導体装置
JP4550503B2 (ja) * 2004-07-22 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2007095984A (ja) * 2005-09-29 2007-04-12 Hitachi Ltd 半導体モジュール
EP2677540A1 (en) * 2012-06-19 2013-12-25 Nxp B.V. Electronic device and method of manufacturing the same
EP3971959A1 (en) * 2020-09-18 2022-03-23 Littelfuse Semiconductor (Wuxi) Co., Ltd. Package structure for low-capacity tvs
JP2022053400A (ja) * 2020-09-24 2022-04-05 株式会社東芝 半導体モジュール
JP7301805B2 (ja) 2020-09-24 2023-07-03 株式会社東芝 半導体モジュール

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