JP2010287887A - パワー半導体モジュールの製造方法、及び接続装置を備えるパワー半導体モジュール - Google Patents
パワー半導体モジュールの製造方法、及び接続装置を備えるパワー半導体モジュール Download PDFInfo
- Publication number
- JP2010287887A JP2010287887A JP2010125775A JP2010125775A JP2010287887A JP 2010287887 A JP2010287887 A JP 2010287887A JP 2010125775 A JP2010125775 A JP 2010125775A JP 2010125775 A JP2010125775 A JP 2010125775A JP 2010287887 A JP2010287887 A JP 2010287887A
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- load terminal
- terminal element
- substrate
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000011888 foil Substances 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 20
- 238000005452 bending Methods 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims 2
- 238000005245 sintering Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Details Of Connecting Devices For Male And Female Coupling (AREA)
Abstract
【解決手段】方法、及びこの方法によって製造される、基板10と接続装置とを備え、負荷端子要素50を備えるパワー半導体コンポーネントは、基板の導体パスに配設され、かつ接続装置によって負荷端子要素に接続される。パワー半導体コンポーネントモジュールは、外部のプリント回路基板60に接続する補助接触パッド460を有する。製造ステップは、同時に又は順次に第1の導体パス42のそれぞれの第1の接触領域420を、パワー半導体コンポーネント20の少なくとも1つの第2の接触領域200と、負荷端子要素の少なくとも1つの第3の接触領域500とに接着接続する。その後、接続装置の少なくとも1つのパワー半導体コンポーネントと、負荷端子要素とから構成された結合体が、パワー半導体モジュールのハウジング30を形成するために配置される。
【選択図】図2
Description
・基板と接続装置とを設けるステップであって、前記縁部まで又はその近くに延在する第2のフォイルの第2の導体パスに関し、電気的安全性のために空気及び沿面距離に適合する程度に十分な距離が存在するように、接続装置の絶縁フォイルが基板からフォイルの縁部に向かう方向にすべての第1の導体パスを越えて突出するように、接続装置が有利に形成されるステップと、
・同時に又は順次に第1の導体パスのそれぞれの第1の接触領域を、パワー半導体コンポーネントの少なくとも1つの第2の接触領域と、負荷端子要素の少なくとも1つの第3の接触領域とに接着接続するステップであって、このステップは、1つの工程ステップで上述のすべての接続を形成する圧力焼結工程によって行うことができることが好ましく、同様に、各々が設けられた所定の曲げ箇所を有する平坦な直線状の金属体として負荷端子要素を形成することが有利であり得るステップと、
・接続装置の少なくとも1つのパワー半導体コンポーネントと負荷端子要素とから構成された結合体を配設して、パワー半導体モジュールのハウジングを形成するステップと、を含むことを特徴とする。この場合、負荷端子要素を有する接触領域が配置される接続装置のそれぞれの部分が、配置してハウジングを形成する間に、基板によって画定された平面に対し直角に位置することになる場合、有利である。このため、接続装置は、この配置の前に曲げ領域内に曲げられる。
12 絶縁材料体
14 パワー半導体コンポーネント
20 パワー半導体コンポーネント
30 ハウジング
32 ハウジング
40 接続装置
42 第1の導体パス
44 電気絶縁フォイル
46 第2の導体パス
48 曲げ領域
50 負荷端子要素
52 凹部
54 所定の曲げ箇所
56 ねじ貫通部
58 ねじ接続部
60 外部のプリント回路基板
62 プラグコネクタ
64 圧力
70 空気及び沿面距離
200 第3の接触領域
420 第1の接触領域
460 補助接触パッド
500 第2の接触領域
Claims (8)
- 基板(10)と、接続装置(40)と、複数の負荷端子要素(50)とを備えるパワー半導体モジュールを製造するための方法であって、少なくとも1つのパワー半導体コンポーネント(20)が、基板(10)の導体パス(14)上に配設され、かつ回路に応じて接続装置(40)を用いて少なくとも1つの負荷端子要素(50)に接続され、接続装置(40)が、外部のプリント回路基板(60)に接続することができる補助接触パッド(460)を有する方法において、次の本質的な製造ステップ、すなわち、
・基板(10)、並びに第1の導電性の構造化された金属フォイル(42)と電気絶縁フォイル(44)と第2の導電性の構造化された金属フォイル(46)とを備える連続層から少なくとも形成された接続装置(40)を設けるステップであって、それぞれの構造化により、前記それぞれの金属フォイルから第1及び第2の導体パスを形成するステップと、
・同時に又は順次に前記第1の導体パス(42)のそれぞれの第1の接触領域(420)を、パワー半導体コンポーネント(20)の少なくとも1つの第2の接触領域(200)と、負荷端子要素(50)の少なくとも1つの第3の接触領域(500)とに接着接続するステップと、
・接続装置(40)の少なくとも1つのパワー半導体コンポーネント(20)と負荷端子要素(50)とから構成された結合体を配設して、前記パワー半導体モジュールのハウジング(30)を形成するステップと、
を有することを特徴とする方法。 - 負荷端子要素(20)を有する接触領域(200、420)が配置される接続装置(40)のそれぞれの部分が、配置してハウジング(30)を形成する間に、基板(10)によって画定された平面に対し直角に位置することになり、このために、接続装置(40)が予め曲げ領域(48)内に曲げられる、請求項1に記載の方法。
- 接続装置(40)の絶縁フォイル(44)が、前記絶縁フォイルの縁部まで又はその近くに延在する前記第2のフォイルの第2の導体パス(46)に関し、電気的安全性のために空気及び沿面距離に適合するのに十分な距離(70)が存在するように、前記基板から絶縁フォイル(44)の縁部に向かう方向に、すべての前記第1の導体パスを越えて突出し、配置してハウジング(30)を形成した後に、少なくとも1つの第2の導体パス(46)を有する絶縁フォイル(44)が前記ハウジングを越えて突出する、請求項1又は2に記載の方法。
- 少なくとも1つの負荷端子要素(50)が角状の金属成形部品として形成され、接続装置(40)に接続するための負荷端子要素(50)の接触領域(500)が第1の脚部の外面に配置され、負荷端子要素(50)の第2の脚部がねじ貫通部(56)用の凹部(52)を有し、前記第2の脚部が基板(10)に対し平行に配置され、前記角状の形状が基板に配置する前に形成される、請求項1に記載の方法。
- 基板(10)と、接続装置(40)と、複数の負荷端子要素(50)とを備えるパワー半導体モジュールであって、少なくとも1つのパワー半導体コンポーネント(20)が、基板(10)の導体パス(14)上に配設され、かつ回路に応じて接続装置(40)を用いて少なくとも1つの負荷端子要素(50)に接続され、前記接続装置(40)が、第1の導電性の構造化された金属フォイル(42)を備える連続層と、電気絶縁フォイル(44)と、第2の導電性の構造化された金属フォイル(46)とから構成され、それぞれの構造化により、前記それぞれの金属フォイルから第1及び第2の導体パスを形成し、少なくとも1つの第1の導体パス(42)が、負荷端子要素(50)に接着接続される接触領域(420)を有し、接続装置(40)が、外部のプリント回路基板(60)に接続することができる補助接触パッド(460)を有する、パワー半導体モジュール。
- 負荷端子要素(50)への接触領域(420)が配置される接続装置(40)の部分が、基板(10)によって画定された平面に対し直角に位置する、請求項5に記載のパワー半導体モジュール。
- 前記接続装置の絶縁フォイル(44)が、前記絶縁フォイルの縁部まで延在する前記第2のフォイルの第2の導体パス(46)に関し、電気的安全性のために空気及び沿面距離に適合するのに十分な距離(70)が存在するように、基板(10)からフォイル(44)の縁部に向かう方向に、すべての第1の導体パス(42)を越えて突出し、少なくとも1つの第2の導体パス(46)を有する絶縁フォイル(44)の前記部分がハウジング(30)を越えて突出する、請求項6に記載のパワー半導体モジュール。
- 少なくとも1つの負荷端子要素(50)が角状の金属成形部品として形成され、接続装置(40)に接続するための負荷端子要素(50)の接触領域(500)が第1の脚部の外面に配置され、負荷端子要素(50)の第2の脚部がねじ貫通部(56)用の凹部(52)を有し、前記第2の脚部が基板(10)に対し平行に配置される、請求項5に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009024385A DE102009024385B4 (de) | 2009-06-09 | 2009-06-09 | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul mit einer Verbindungseinrichtung |
DE102009024385.2 | 2009-06-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010287887A true JP2010287887A (ja) | 2010-12-24 |
JP5520696B2 JP5520696B2 (ja) | 2014-06-11 |
Family
ID=42378054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010125775A Active JP5520696B2 (ja) | 2009-06-09 | 2010-06-01 | パワー半導体モジュールの製造方法、及び接続装置を備えるパワー半導体モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US8283784B2 (ja) |
EP (1) | EP2264761A3 (ja) |
JP (1) | JP5520696B2 (ja) |
KR (1) | KR101672548B1 (ja) |
CN (1) | CN101924044B (ja) |
DE (1) | DE102009024385B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012064677A (ja) * | 2010-09-15 | 2012-03-29 | Denso Corp | 半導体モジュール |
JP2013062405A (ja) * | 2011-09-14 | 2013-04-04 | Mitsubishi Electric Corp | 半導体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010063387A1 (de) | 2010-12-17 | 2012-06-21 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit mindestens zwei Teilmoduln |
DE102013200526B4 (de) * | 2013-01-16 | 2019-11-21 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
JP6138181B2 (ja) | 2014-04-15 | 2017-05-31 | キヤノン株式会社 | 画像形成装置に用いられる樹脂成形品及びカートリッジ、並びに画像形成装置に用いられる可動部材の製造方法及びカートリッジの製造方法 |
DE102016113152B4 (de) * | 2016-07-18 | 2019-12-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Leistungshalbleitermodul hiermit |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093995A (ja) * | 2000-09-20 | 2002-03-29 | Unisia Jecs Corp | 半導体装置 |
JP2004006905A (ja) * | 2003-06-02 | 2004-01-08 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP2005183495A (ja) * | 2003-12-17 | 2005-07-07 | Hitachi Ltd | 電力変換装置 |
JP2007103948A (ja) * | 2005-10-05 | 2007-04-19 | Semikron Elektronik Gmbh & Co Kg | 絶縁中間層を備えたパワー半導体モジュール及びその製造方法 |
DE102006027482B3 (de) * | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
JP2007258711A (ja) * | 2006-03-22 | 2007-10-04 | Semikron Elektronik Gmbh & Co Kg | 結合装置を有するコンパクトなパワー半導体モジュール |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10237561C1 (de) * | 2002-08-16 | 2003-10-16 | Semikron Elektronik Gmbh | Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule |
DE10309302B4 (de) * | 2003-03-04 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Sensorbauteil |
JP4282417B2 (ja) | 2003-09-12 | 2009-06-24 | ソニーケミカル&インフォメーションデバイス株式会社 | 接続構造体 |
DE10355925B4 (de) * | 2003-11-29 | 2006-07-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren seiner Herstellung |
DE102005024900B4 (de) * | 2004-06-08 | 2012-08-16 | Fuji Electric Co., Ltd. | Leistungsmodul |
DE102005039278A1 (de) * | 2005-08-19 | 2007-02-22 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Leitungselement |
US7995356B2 (en) * | 2005-08-26 | 2011-08-09 | Siemens Aktiengesellschaft | Power semiconductor module comprising load connection elements applied to circuit carriers |
DE102005049687B4 (de) * | 2005-10-14 | 2008-09-25 | Infineon Technologies Ag | Leistungshalbleiterbauteil in Flachleitertechnik mit vertikalem Strompfad und Verfahren zur Herstellung |
US9373563B2 (en) * | 2007-07-20 | 2016-06-21 | Infineon Technologies Ag | Semiconductor assembly having a housing |
JP5192194B2 (ja) | 2007-07-26 | 2013-05-08 | デクセリアルズ株式会社 | 接着フィルム |
DE102007054710B3 (de) * | 2007-11-16 | 2009-07-09 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Halbleiterbaugruppe |
DE102008017454B4 (de) * | 2008-04-05 | 2010-02-04 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu |
DE102009017733B4 (de) * | 2009-04-11 | 2011-12-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen |
-
2009
- 2009-06-09 DE DE102009024385A patent/DE102009024385B4/de active Active
-
2010
- 2010-04-24 EP EP10004376.9A patent/EP2264761A3/de not_active Withdrawn
- 2010-06-01 JP JP2010125775A patent/JP5520696B2/ja active Active
- 2010-06-09 CN CN201010202629.6A patent/CN101924044B/zh active Active
- 2010-06-09 US US12/797,331 patent/US8283784B2/en not_active Expired - Fee Related
- 2010-06-09 KR KR1020100054373A patent/KR101672548B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002093995A (ja) * | 2000-09-20 | 2002-03-29 | Unisia Jecs Corp | 半導体装置 |
JP2004006905A (ja) * | 2003-06-02 | 2004-01-08 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP2005183495A (ja) * | 2003-12-17 | 2005-07-07 | Hitachi Ltd | 電力変換装置 |
JP2007103948A (ja) * | 2005-10-05 | 2007-04-19 | Semikron Elektronik Gmbh & Co Kg | 絶縁中間層を備えたパワー半導体モジュール及びその製造方法 |
JP2007258711A (ja) * | 2006-03-22 | 2007-10-04 | Semikron Elektronik Gmbh & Co Kg | 結合装置を有するコンパクトなパワー半導体モジュール |
DE102006027482B3 (de) * | 2006-06-14 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012064677A (ja) * | 2010-09-15 | 2012-03-29 | Denso Corp | 半導体モジュール |
JP2013062405A (ja) * | 2011-09-14 | 2013-04-04 | Mitsubishi Electric Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE102009024385A1 (de) | 2010-12-16 |
JP5520696B2 (ja) | 2014-06-11 |
CN101924044A (zh) | 2010-12-22 |
US20110001244A1 (en) | 2011-01-06 |
EP2264761A2 (de) | 2010-12-22 |
CN101924044B (zh) | 2014-07-30 |
KR101672548B1 (ko) | 2016-11-16 |
EP2264761A3 (de) | 2016-07-13 |
KR20100132467A (ko) | 2010-12-17 |
DE102009024385B4 (de) | 2011-03-17 |
US8283784B2 (en) | 2012-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5520696B2 (ja) | パワー半導体モジュールの製造方法、及び接続装置を備えるパワー半導体モジュール | |
JP4264375B2 (ja) | パワー半導体モジュール | |
JP4258432B2 (ja) | 基板接合部材ならびにそれを用いた三次元接続構造体 | |
CN101364679B (zh) | 电连接组件 | |
JP5156355B2 (ja) | 接触バネを有するパワー半導体モジュール | |
KR101118871B1 (ko) | 접속 장치를 갖는 소형 전력 반도체 모듈 | |
CN101577262A (zh) | 功率半导体模块系统 | |
KR20070104194A (ko) | 센서 장치 | |
CN204243028U (zh) | 电子系统 | |
JP4848252B2 (ja) | 端子要素を備えたパワー半導体モジュール | |
CN102903681A (zh) | 在功率半导体模块中的衬底的柔性连接 | |
JP2008153657A (ja) | 接触バネを有するパワー半導体モジュール | |
JP2010251749A (ja) | 接続装置を有し且つ接触ばねとして形成されている内部端子要素を有するパワー半導体モジュール | |
US10653020B2 (en) | Electronic module and method for producing an electronic module | |
CN102446866A (zh) | 带有基础模块和连接模块的功率半导体模块 | |
JP5004337B2 (ja) | メタルコア基板の外部接続端子 | |
JP2008166275A (ja) | 電気的なコネクタストリップ | |
JP2013541852A (ja) | 積層セラミック部品及び積層セラミック部品の製造方法 | |
JP2010199514A (ja) | 回路構成体 | |
JP2008147432A (ja) | 電子回路装置及び電力変換装置及び電子回路装置の製造方法 | |
JP2007134572A (ja) | パワーモジュール | |
JP2011120446A (ja) | 電気接続箱 | |
JP4622646B2 (ja) | 半導体装置 | |
JP2016178717A (ja) | 電子制御装置及びその製造方法 | |
JP2007157949A (ja) | 低温焼成多層セラミック基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130315 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140311 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140401 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140407 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5520696 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |