JP5577029B2 - 基板及び加圧装置を有するパワー半導体モジュール - Google Patents
基板及び加圧装置を有するパワー半導体モジュール Download PDFInfo
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- JP5577029B2 JP5577029B2 JP2008292166A JP2008292166A JP5577029B2 JP 5577029 B2 JP5577029 B2 JP 5577029B2 JP 2008292166 A JP2008292166 A JP 2008292166A JP 2008292166 A JP2008292166 A JP 2008292166A JP 5577029 B2 JP5577029 B2 JP 5577029B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
2a、2b 構造化された導線路
3a、3b パワー半導体コンポーネント
4 加圧装置
9 ハウジング
10 絶縁材料体
15、17 必要な絶縁
40 圧力を導入する圧力要素
42 ブリッジ要素
44 クッション要素
420、422、424 加圧用指状部分
50、52、54 負荷接続要素
500、520、540 内部接触装置
6、60、62 補助接続要素
7a〜7d、70a、70b 凹部
70 凹部残余部分
8a〜8d、80a、80b はめ込み用突起
Claims (8)
- 少なくとも1つの半導体コンポーネント(3a、3b)を備えている少なくとも1つの基板(1)と、ハウジング(9)と、加圧装置(4)と、外部に接続する負荷接続要素(50、52、54)及び補助接続要素(6、60、62)とを有するパワー半導体モジュールにおいて、
基板(1)が、絶縁材料体(10)を有し、負荷及び補助ポテンシャルを伴った導線路(2a、2b)が、パワー半導体モジュールの内部に対向している前記絶縁材料体の第1主面上に配置されていて、
パワー半導体モジュールの内部に対向している前記基板の第1主面が、パワー半導体コンポーネントにより被覆されていない少なくとも2つの領域に配置されている前記導線路(2a、2b)の領域に少なくとも2つの導線路(2a、2b)の凹部(7a、7b、7c、7d)を有し、加圧装置(4)が、前記基板に対向する側で少なくとも2箇所にて、前記凹部に割り当てられかつ形状的に合わせる方式及び/又は摩擦による方式で配置されているはめ込み用突起(8a、8b、8c、8d)を備えていることを特徴とする、パワー半導体モジュール。 - 前記加圧装置が、伸縮性のクッション要素(44)を有し、圧力を導入する圧力要素(40)とブリッジ要素(42)との間に配置されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 前記ブリッジ要素(42)が、部分体であって、この部分体から複数の加圧用指状部分(420、422、424)が前記基板表面の方向に向かって配置され、前記クッション要素(44)に対向している平坦な部分体を有するプラスチック体として形成されていることを特徴とする、請求項2に記載のパワー半導体モジュール。
- 前記はめ込み用突起(8a、8b、8c、8d)が、円錐台型、又はドーム型、又は円柱型、又は十字型、又はプラットフォーム型であり、前記突起に割り当てられている前記凹部(7a、7b、7c)は、前記突起をはめ込むために対応して形成されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 前記負荷接続要素(50、52、54)が、部分的に、前記基板表面に対して直角に、前記ブリッジ要素(42)の溝状に窪んだ部分を介して配置され、前記基板(1)に対向する側に、前記基板上に配置されている前記導線路(2a、2b)に対して電気接続するための内部接触装置(500、520、540)を有することを特徴とする、請求項2に記載のパワー半導体モジュール。
- 前記ハウジング(9)が、前記ブリッジ要素(42)及び前記少なくとも1つの基板(1)を横方向でフレーム状に取り囲んでいることを特徴とする、請求項2に記載のパワー半導体モジュール。
- 前記圧力を導入する圧力要素(40)が、パワー半導体モジュールの上側の閉鎖部を形成することを特徴とする、請求項1に記載のパワー半導体モジュール。
- 少なくとも1つの前記負荷接続要素(50、52、54)自体が、前記加圧装置(4)の一部を形成することを特徴とする、請求項1に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007054709.0 | 2007-11-16 | ||
DE102007054709.0A DE102007054709B4 (de) | 2007-11-16 | 2007-11-16 | Leistungshalbleitermodul mit einem Substrat und mit einer Druckeinrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009147314A JP2009147314A (ja) | 2009-07-02 |
JP5577029B2 true JP5577029B2 (ja) | 2014-08-20 |
Family
ID=40576783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008292166A Active JP5577029B2 (ja) | 2007-11-16 | 2008-11-14 | 基板及び加圧装置を有するパワー半導体モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US8203205B2 (ja) |
EP (1) | EP2091080B1 (ja) |
JP (1) | JP5577029B2 (ja) |
KR (1) | KR101543788B1 (ja) |
CN (1) | CN101436585B (ja) |
DE (1) | DE102007054709B4 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008034068B4 (de) * | 2008-07-22 | 2019-07-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE102009022659B4 (de) * | 2009-05-26 | 2012-01-19 | Semikron Elektronik Gmbh & Co. Kg | Kontakteinrichtung für ein Leistungshalbleitermodul |
DE102009046403B4 (de) * | 2009-11-04 | 2015-05-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontakttechnik |
DE102011076325B4 (de) * | 2011-05-24 | 2016-05-04 | Semikron Elektronik Gmbh & Co. Kg | Kühlanordnung für eine leistungselektronische Komponente mit Subsystemen und einer Kühleinrichtung |
US8586420B2 (en) * | 2011-09-29 | 2013-11-19 | Infineon Technologies Ag | Power semiconductor arrangement and method for producing a power semiconductor arrangement |
JP5953790B2 (ja) * | 2011-10-12 | 2016-07-20 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
KR101443972B1 (ko) * | 2012-10-31 | 2014-09-23 | 삼성전기주식회사 | 일체형 전력 반도체 모듈 |
DE102015114191B3 (de) * | 2015-08-26 | 2016-11-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Mehrzahl von Submodulen und mit einer Druckeinrichtung und Anordnung hiermit |
DE102017219986A1 (de) * | 2017-11-09 | 2019-05-09 | Robert Bosch Gmbh | Drucksensormodul und Drucksensorvorrichtung mit einem Drucksensormodul |
Family Cites Families (15)
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US4772210A (en) | 1986-07-14 | 1988-09-20 | Associated Enterprises, Inc. | Electrical connector with keying, torsion restraint and latching features |
JP3180863B2 (ja) * | 1993-07-27 | 2001-06-25 | 富士電機株式会社 | 加圧接触形半導体装置およびその組立方法 |
WO1996015551A1 (en) * | 1994-11-15 | 1996-05-23 | Formfactor, Inc. | Mounting electronic components to a circuit board |
EP0880806A4 (en) * | 1996-02-02 | 1999-05-06 | Berg Tech Inc | MODULAR POWER CONNECTOR FOR SWITCHING |
JP3519211B2 (ja) * | 1996-04-18 | 2004-04-12 | 日本インター株式会社 | 複合半導体装置 |
US6059615A (en) | 1997-01-31 | 2000-05-09 | Berg Technology, Inc. | Modular cable to board power connector |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
DE19903875C2 (de) * | 1999-02-01 | 2001-11-29 | Semikron Elektronik Gmbh | Leistungshalbleiterschaltungsanordnung, insbesondere Stromumrichter, in Druckkontaktierung |
US6337228B1 (en) * | 1999-05-12 | 2002-01-08 | Amkor Technology, Inc. | Low-cost printed circuit board with integral heat sink for semiconductor package |
DE10008572B4 (de) * | 2000-02-24 | 2007-08-09 | Infineon Technologies Ag | Verbindungseinrichtung für Leistungshalbleitermodule |
DE10127947C1 (de) * | 2001-08-22 | 2002-10-17 | Semikron Elektronik Gmbh | Schaltungsanordnung |
DE10213648B4 (de) * | 2002-03-27 | 2011-12-15 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
DE10306643B4 (de) * | 2003-02-18 | 2005-08-25 | Semikron Elektronik Gmbh | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102004021122B4 (de) | 2004-04-29 | 2007-10-11 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102006006424B4 (de) | 2006-02-13 | 2011-11-17 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
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2007
- 2007-11-16 DE DE102007054709.0A patent/DE102007054709B4/de active Active
-
2008
- 2008-10-22 EP EP08018434.4A patent/EP2091080B1/de active Active
- 2008-11-13 CN CN200810173324XA patent/CN101436585B/zh active Active
- 2008-11-14 KR KR1020080113480A patent/KR101543788B1/ko active IP Right Grant
- 2008-11-14 JP JP2008292166A patent/JP5577029B2/ja active Active
- 2008-11-17 US US12/313,125 patent/US8203205B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101543788B1 (ko) | 2015-08-11 |
DE102007054709A1 (de) | 2009-05-28 |
DE102007054709B4 (de) | 2014-11-13 |
US8203205B2 (en) | 2012-06-19 |
EP2091080A1 (de) | 2009-08-19 |
US20090134482A1 (en) | 2009-05-28 |
KR20090050987A (ko) | 2009-05-20 |
JP2009147314A (ja) | 2009-07-02 |
CN101436585A (zh) | 2009-05-20 |
CN101436585B (zh) | 2012-04-04 |
EP2091080B1 (de) | 2015-08-05 |
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