JP5118888B2 - 互いに電気絶縁された端子要素を備えたパワー半導体モジュール - Google Patents
互いに電気絶縁された端子要素を備えたパワー半導体モジュール Download PDFInfo
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- JP5118888B2 JP5118888B2 JP2007138030A JP2007138030A JP5118888B2 JP 5118888 B2 JP5118888 B2 JP 5118888B2 JP 2007138030 A JP2007138030 A JP 2007138030A JP 2007138030 A JP2007138030 A JP 2007138030A JP 5118888 B2 JP5118888 B2 JP 5118888B2
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
Description
2 冷却部材
3 ハウジング
30 絶縁材料成形体
32 孔
4 スタック
40、42、44 負荷端子要素
400、420、440 接触フット
402、422、442 条片状の部分
404、424、444 外部接触端子
406、426、446 孔
408、428、448 被覆部
46 絶縁部
5 基板
52 絶縁材料ボディ
54 導体パス
56 銅積層部
60 パワー半導体素子
62 ワイヤボンディング接続部
70 押付装置
90 スナップ・ロック・接続部
Claims (9)
- 冷却部材(2)上に配置するためのものであり、少なくとも1つの基板(5)と、この基板上に配置されている少なくとも2つのパワー半導体素子(60)と、ハウジング(3)と、外部へと通じる複数の負荷端子要素(40、42、44)及び制御端子要素とを備えているパワー半導体モジュール(1)であって、基板(5)が絶縁材料ボディ(52)を有し、この絶縁材料ボディ上にてパワー半導体モジュールの内部側の第1主面上に、負荷電位を伴う導体パス(54)が配置されている、前記パワー半導体モジュールにおいて、
複数の負荷端子要素(40、42、44)が、各々、外部接触端子(404、424、444)と、条片状の部分(402、422、442)と、この条片状の部分から出発している内部接触端子(400、420、440)とを備えた金属成形体として形成されていて、それらの内部接触端子が条片状の部分から基板(5)に達し、回路に適してこの基板と接触し、更には複数の負荷端子要素(40、42、44)が、外部接触端子及び内部接触端子の領域を除き、絶縁材料(408、428、448)により完全に被覆され、それにより互いに電気絶縁されていることを特徴とするパワー半導体モジュール。 - パワー半導体モジュール(1)が、押付装置(70)を用いた押付接触形式であることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 絶縁材料(408、428、448)が、400よりも大きなCTI値を有することを特徴とする、請求項1に記載のパワー半導体モジュール。
- 絶縁材料(408、428、448)が、浸漬方法を用いて配置されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 絶縁材料(408、428、448)が、吹付方法を用いて配置されていることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 複数の負荷端子要素(40、42、44)が、条片状の部分(402、422、442)の領域でスタック(4)を形成していることを特徴とする、請求項1に記載のパワー半導体モジュール。
- スタック(4)が、接着により形成されていることを特徴とする、請求項6に記載のパワー半導体モジュール。
- スタック(4)が、複数の負荷端子要素(40、42、44)に絶縁材料(408、428、448)を同時に配置することにより形成されていることを特徴とする、請求項6に記載のパワー半導体モジュール。
- 押付装置(70)及び/又はスタック(4)が、コイルバネとして形成されている補助端子要素を通過案内するための孔(406、426、446)を有することを特徴とする、請求項2、6〜8のいずれか一項に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006027481.4 | 2006-06-14 | ||
DE102006027481A DE102006027481C5 (de) | 2006-06-14 | 2006-06-14 | Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen |
Publications (2)
Publication Number | Publication Date |
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JP2007335858A JP2007335858A (ja) | 2007-12-27 |
JP5118888B2 true JP5118888B2 (ja) | 2013-01-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007138030A Active JP5118888B2 (ja) | 2006-06-14 | 2007-05-24 | 互いに電気絶縁された端子要素を備えたパワー半導体モジュール |
Country Status (10)
Country | Link |
---|---|
US (1) | US8338942B2 (ja) |
EP (1) | EP1868243B1 (ja) |
JP (1) | JP5118888B2 (ja) |
KR (1) | KR101068703B1 (ja) |
CN (1) | CN101090109B (ja) |
AT (1) | ATE417362T1 (ja) |
DE (2) | DE102006027481C5 (ja) |
DK (1) | DK1868243T3 (ja) |
ES (1) | ES2318808T3 (ja) |
PL (1) | PL1868243T3 (ja) |
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JP4572247B2 (ja) * | 2008-06-02 | 2010-11-04 | 本田技研工業株式会社 | ハイブリッド車両 |
DE102008034467B4 (de) * | 2008-07-24 | 2014-04-03 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleitermodul und mit einer Verbindungseinrichtung |
DE102009000094A1 (de) | 2009-01-09 | 2010-07-15 | Robert Bosch Gmbh | Tank zur Aufnahme einer wässrigen Lösung |
DE102009037257B4 (de) * | 2009-08-12 | 2014-07-31 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schaltungsträger und Lastanschlusselement sowie Herstellungsverfahren hierzu |
DE102009057145B4 (de) * | 2009-12-05 | 2013-12-19 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit teilweise bandartigen Lastanschlusselementen |
DE102009057146B4 (de) * | 2009-12-05 | 2013-09-26 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit Hybriddruckspeicher |
DE102010041892A1 (de) * | 2010-10-01 | 2012-04-05 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Grundmodul und einem Verbindungsmodul |
US8637981B2 (en) * | 2011-03-30 | 2014-01-28 | International Rectifier Corporation | Dual compartment semiconductor package with temperature sensor |
KR101443972B1 (ko) * | 2012-10-31 | 2014-09-23 | 삼성전기주식회사 | 일체형 전력 반도체 모듈 |
WO2014090685A1 (de) | 2012-12-10 | 2014-06-19 | Abb Technology Ag | Leistungshalbleitermodul und kontaktierungsanordnung |
WO2015187500A1 (en) * | 2014-06-02 | 2015-12-10 | Enphase Energy, Inc. | Ungrounded inverter enclosure and cabling |
CN105742252B (zh) * | 2014-12-09 | 2019-05-07 | 台达电子工业股份有限公司 | 一种功率模块及其制造方法 |
EP3104507A1 (en) | 2015-06-12 | 2016-12-14 | ABB Technology AG | Terminal arrangement for a power semiconductor module |
CN108010891B (zh) * | 2016-11-02 | 2020-03-17 | 株洲中车时代电气股份有限公司 | 功率半导体模块 |
US10283447B1 (en) | 2017-10-26 | 2019-05-07 | Infineon Technologies Ag | Power semiconductor module with partially coated power terminals and method of manufacturing thereof |
DE102018112552B4 (de) * | 2018-05-25 | 2021-04-15 | Semikron Elektronik Gmbh & Co. Kg | Baugruppe mit einem Kunststoffformkörper und einer Mehrzahl von Lastanschlusselementen einer Leistungshalbleitereinrichtung und Leistungshalbleitereinrichtung hiermit |
DE102021205632A1 (de) | 2021-06-02 | 2022-12-08 | Zf Friedrichshafen Ag | Halbbrücke für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter |
DE102022207590A1 (de) | 2022-07-26 | 2024-02-01 | Zf Friedrichshafen Ag | Herstellungsoptimierte Leistungselektronik für einen Stromrichter mit oberseitig kontaktierbaren Leistungsanschlüssen |
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- 2007-06-13 DK DK07011532T patent/DK1868243T3/da active
- 2007-06-13 EP EP07011532A patent/EP1868243B1/de active Active
- 2007-06-14 US US11/818,288 patent/US8338942B2/en active Active
Also Published As
Publication number | Publication date |
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US8338942B2 (en) | 2012-12-25 |
KR101068703B1 (ko) | 2011-09-28 |
CN101090109A (zh) | 2007-12-19 |
US20080007918A1 (en) | 2008-01-10 |
DE102006027481A1 (de) | 2007-12-27 |
KR20070119503A (ko) | 2007-12-20 |
ES2318808T3 (es) | 2009-05-01 |
JP2007335858A (ja) | 2007-12-27 |
DE102006027481C5 (de) | 2012-11-08 |
CN101090109B (zh) | 2010-10-13 |
PL1868243T3 (pl) | 2009-05-29 |
EP1868243A1 (de) | 2007-12-19 |
DE102006027481B4 (de) | 2010-12-23 |
DE502007000284D1 (de) | 2009-01-22 |
ATE417362T1 (de) | 2008-12-15 |
DK1868243T3 (da) | 2009-04-06 |
EP1868243B1 (de) | 2008-12-10 |
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