JP5950684B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5950684B2 JP5950684B2 JP2012110397A JP2012110397A JP5950684B2 JP 5950684 B2 JP5950684 B2 JP 5950684B2 JP 2012110397 A JP2012110397 A JP 2012110397A JP 2012110397 A JP2012110397 A JP 2012110397A JP 5950684 B2 JP5950684 B2 JP 5950684B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Description
第二に、形状安定性押付部材が形成されているため、構成要素の実装位置が制限され、結果的に半導体装置の小型化を阻害していた。
以下、本発明の実施の形態1について説明する。まず、図1を参照して実施の形態1に係る半導体装置100の構成を説明する。半導体装置100は、たとえばパワー半導体装置であって、半導体素子1と、電気絶縁基板2と、制御基板5と、半導体素子1と制御基板5とを電気的に接続するスプリング状端子10と、を備える。
図6を参照して、本発明の実施の形態2による半導体装置について説明する。本実施の形態2による半導体装置200は、基本的には図1に示した半導体装置100と同様の構成を備えるが、半導体素子1の表面に形成された電極パッド12にスプリング状端子10が圧接する点で、実施の形態1と異なる。
Claims (4)
- 半導体素子を含む電気絶縁基板と、
前記半導体素子に関連する電子部品を搭載した制御基板と、
前記電気絶縁基板と前記制御基板とを電気的に接続するスプリング状端子と、
前記スプリング状端子の一端と前記制御基板とを固定する接続部材と、
前記電気絶縁基板の表面上であって前記スプリング状端子が設けられている場所以外を覆う保護層とを備え、
前記スプリング状端子は、弾性部を含み、
前記スプリング状端子の前記一端と前記制御基板とは、前記接続部材により,脱着可能に固定され、
前記スプリング状端子の他端と前記電気絶縁基板とは、前記スプリング状端子の前記弾性部が弾性変形することにより互いに当接し、
前記スプリング状端子には、前記接続部材の一部が嵌るくぼみが形成されている、半導体装置。 - 前記電気絶縁基板と前記制御基板とは、前記スプリング状端子を挟んで対向するように配置される、請求項1に記載の半導体装置。
- 前記スプリング状端子の前記一端は、前記電気絶縁基板に含まれる前記半導体素子と当接している、請求項1または請求項2に記載の半導体装置。
- 前記スプリング状端子は、帯状導体からなり、
前記弾性部は、前記帯状導体が屈曲した部分である、請求項1〜請求項3のいずれか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012110397A JP5950684B2 (ja) | 2012-05-14 | 2012-05-14 | 半導体装置 |
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JP2012110397A JP5950684B2 (ja) | 2012-05-14 | 2012-05-14 | 半導体装置 |
Publications (2)
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JP2013239512A JP2013239512A (ja) | 2013-11-28 |
JP5950684B2 true JP5950684B2 (ja) | 2016-07-13 |
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JP2012110397A Active JP5950684B2 (ja) | 2012-05-14 | 2012-05-14 | 半導体装置 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6017492B2 (ja) | 2014-04-24 | 2016-11-02 | Towa株式会社 | 樹脂封止電子部品の製造方法、突起電極付き板状部材、及び樹脂封止電子部品 |
JP5944445B2 (ja) | 2014-07-18 | 2016-07-05 | Towa株式会社 | 樹脂封止電子部品の製造方法、突起電極付き板状部材、樹脂封止電子部品、及び突起電極付き板状部材の製造方法 |
CN106796934B (zh) * | 2015-04-10 | 2019-12-10 | 富士电机株式会社 | 半导体装置 |
WO2018087893A1 (ja) * | 2016-11-11 | 2018-05-17 | 三菱電機株式会社 | 電力変換装置及びこれを用いた空気調和装置 |
JP6910318B2 (ja) * | 2018-04-09 | 2021-07-28 | 三菱電機株式会社 | 半導体装置 |
JP2021103911A (ja) * | 2019-12-24 | 2021-07-15 | 住友電装株式会社 | 電気接続箱 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515335Y2 (ja) * | 1971-03-26 | 1980-04-09 | ||
JPH04145688A (ja) * | 1990-10-08 | 1992-05-19 | Nec Ic Microcomput Syst Ltd | 半導体集積回路用基板 |
JP2000307056A (ja) * | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | 車載用半導体装置 |
JP2002141463A (ja) * | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | 半導体モジュール |
JP4089300B2 (ja) * | 2002-06-05 | 2008-05-28 | 株式会社ジェイテクト | 基板収容箱 |
DE102004021122B4 (de) * | 2004-04-29 | 2007-10-11 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
JP5334457B2 (ja) * | 2008-05-29 | 2013-11-06 | 三菱電機株式会社 | 半導体装置 |
DE102008045615C5 (de) * | 2008-09-03 | 2018-01-04 | Infineon Technologies Ag | Verfahren zur Herstellung eines Leistungshalbleitermoduls |
JP2010114326A (ja) * | 2008-11-07 | 2010-05-20 | Hitachi Cable Ltd | フレキシブルプリント配線板 |
JP5063672B2 (ja) * | 2009-12-11 | 2012-10-31 | 三菱電機株式会社 | 配線基板及びその製造方法 |
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2012
- 2012-05-14 JP JP2012110397A patent/JP5950684B2/ja active Active
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