JPS60113931A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60113931A
JPS60113931A JP58221564A JP22156483A JPS60113931A JP S60113931 A JPS60113931 A JP S60113931A JP 58221564 A JP58221564 A JP 58221564A JP 22156483 A JP22156483 A JP 22156483A JP S60113931 A JPS60113931 A JP S60113931A
Authority
JP
Japan
Prior art keywords
copper
sheet
base
thickness
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58221564A
Other languages
English (en)
Inventor
Keizo Tani
谷　敬造
Yasumasa Saito
斉藤　安正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58221564A priority Critical patent/JPS60113931A/ja
Priority to DE8484114132T priority patent/DE3473972D1/de
Priority to EP84114132A priority patent/EP0144866B1/en
Publication of JPS60113931A publication Critical patent/JPS60113931A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体テンプとは電気的に絶縁された放熱板を
有する大電力モジュール製品に適した半導体装置に関す
る。
〔発明の技術的背景とその問題点〕
従来、絶縁放熱板を有する半導体装置は、第１図に示す
如く銅または銅合金等のシート１をセラミック等の非金
属耐火材料板２０両面に直接ボンドしてなる基Ｖｉ、（
以下Ｃ，Ｄ、Ｂ基板という・・・・・・（：：ｕ　ｐｉ
ｒｅｃｔ　Ｂｏｎｄ　）を使用し、その−面に半導体テ
ンプ３をグイボンドし、他面は放熱板を兼ねる銅ペース
４を半田等を用いて接着させて、上記Ｃ，Ｄ、Ｂ基板の
セラミックを介して半導体テン７°３と銅ペース４を電
気的に絶縁Ｌ”Ｕいる。次Ｋ　％ｊｌヘース周辺にシリ
コーン接着剤５をコートし、ケース６をかぶせて接着す
る。
このケースを接着した後、半導体テンプ及びアルミニウ
ムワイヤ保護のためのシリコーングル７を注入、キュア
させ、エポキシ樹脂８を更に注入、キュアさせて製品を
キャスティングし、製品は完成する。図中９は半田、１
０はアルミニウムワイヤ、１１は電極端子である。
ところで前記Ｃ，Ｄ、、Ｂ基板の両面に接合した銅シー
ト１は、その製造過・程においてセラミック板２と熱膨
張係数が略等しくなっており、しかもその接合は強固で
あるた、め、Ｃ，Ｄ、Ｂ基板はｌ物体と見てさしつかえ
ない。従って該Ｃ０Ｄ、Ｂ　基板と放熱板を兼ねる銅ベ
ース４とを半田９等を用いて接着させると、銅（α＝１
７×１０−’／’Ｃ，）とセラミック（α＝　７．７　
Ｘ　Ｉ　Ｏ−’／’Ｃ，）の熱膨張差によシ、半田融点
（糺１８５Ｃ，）では両部柑とも熱膨張した状態で平坦
に接着しているが、冷却後（糺２５　’Ｃ，）ではバイ
メタル効果により、製品は大きく凸状の反りｈを発生す
る。例えは銅ペース４が８５ｍｍＸ３０朋×３罷、Ｃ，
Ｄ、Ｂａ仮が６５ｉｍＸ２６ｍｍ（セラミック厚０．６
＋＋ｏａ％銅シート厚０．３ｕ両面）では、反Ｄｉが２
００〜２５０μにも達する。これでは製品となった場合
、銅ベース４の両端をねじ締めして固定しても、間隙が
２００μ以上もあって放熱効果は著しく妨げられる。ま
た強制的に反りを解消しようとすれば、半導体テップ３
の破損或いはＣ，Ｄ、Ｂ基板のセラミックのクランクも
考えられ、使用に耐えない。また組立工程においては、
銅ペース４が凸状に反っているため、後工程のケース６
の接着においてケース６の下面と一致せず、多量にシリ
コン接着剤５を使用してケース６と銅ペース４との間隙
を埋めねばならず、組み立て工程上、非常な困難が伴な
う。
しかもこうして製造された製品はケース６と銅ベース４
０間隙りが太きいため接着力は弱く、耐湿性にも劣るも
のである。
〔発明の目的〕
本発明は上記実情に鑑みてなされたもので、放熱板を兼
ねる銅ペースの組み立て過程における反υを少くシ、放
熱効果の損失及び半導体テップの割れを防ぎ、信頼性の
高い半導体装置を提供しようとするものである。
〔発明のａ要〕
前記銅ペースの組み立て過程における反り発生原因は、
Ｃ，Ｄ、Ｂ基板と銅ペースのバイメタル効果と考えられ
る。従ってこれを解消するためＣ，Ｄ、Ｂ基板の厚さ、
形状及び銅ペースの変更（熱膨張係数のＣ，Ｄ、Ｂ基板
に近い部材の選択）、曲げモーメント強度アップを考慮
した銅ベース形状変更、厚さ変更等の実験を行なった結
果、放熱効果の損失が一番少なく、反り量もない方法と
して、バイメタルに生じる内部応力を銅ペース内で吸収
できるだけの充分な銅ベース厚にすることで達成できる
ことが分った。このようにして製品自体の熱抵抗損失を
大きくすることなく、製品数シ付は時の放熱損失を最小
限にするものである。
〔発明の実施列〕
以下図面を参照して本発明の詳細な説明する。ここで本
発明に到った各種（イ）〜（ホ）の実験例を示す。
（イ）セラミック２の４与を厚くした場合−ここでセラ
ミック寸法は６５ｉｘＸ２６＋ｏｔ、銅ペース４の寸法
は８５ｉｚＸ　３０ｍ１Ｘ　３罰である。
以上のように銅ペースの反ジはセラミック厚によって減
少化できるが、製品熱抵抗値の上昇を防ぎきれず、製品
取り付は時の放熱損失は総合的に良化できなかった。
（ロ）銅ペース４の部材変更： 即ち熱膨張係数が銅より小さい部材を使用したが、反り
は発生し、製品熱抵抗値は熱伝導が銅よシ劣るため上昇
し、製品には不適格であった。−なお各部材寸法は（イ
）項の場合と同じである。
（ハ）銅ベース４の形状変更： 厚さ３間の銅ベースの片面及び両面をホーニングまたは
波状コイニングし、銅を伸びやすく或いは収縮しやすく
したが、効果なく１反り量は２００〜３００μであった
。また銅ペースの長手方向をＵ型に変形して長手方向に
曲υにく〈シ、バイメタル効果による曲りを少なくする
工夫も効果がなく、この時の反り量は１７０〜２３０μ
であった。
に）Ｃ，Ｄ、Ｂ基板と銅ペースの接層半田量アンプ：バ
イメタルの接合面の半田量を多くシ、半田部材にすベク
を発生させ、バイメタル内部応力の緩オロを行なったが
、半田厚２ｕまで効果なく、この時の反Ｖ量最ｉＪ箇直
は２００μであった。
（ホ）オーペースの厘さ変更： この時の使用部材寸法は 鋼ペースが８５騙ｘ３０ｉ＋１Ｘｔ（厚み）セラミック
が６５ｉｉＸ　２６＋ｉｍＸ　Ｏ，６ｍｒｎ銅シート１
が０．３　ｍｓ厚 このように銅ペース４の厚さｔを変更することにより反
９敢大寸法は小さくなり、かつ製品熱抵抗値も太きくな
ることはなかった。これは、約１８５　’Ｃ，の半田融
点で銅ペース４が１７７μ、セラミンク基ｖｉ２が８０
μ熱膨張した状態で接合されたものが、常温（２５ｃ、
　）まで冷却されたとき銅−セラミックの伸びの差９７
μ力だけバイメタル内部応力がかかるのであるが、銅接
合面から他方の非接合面へと移るにつれ、鋼内の内部応
力は弱まυ、銅ベース４ｊ阜さか熱膨張伸びの差（９７
μ）より非常に大きい場合は、他面は反らないことを示
す。
またサンプルナンバーＡ−Ｅを組み立て完了まで反り量
を追跡した結果、後工程のキャスティング樹脂８の注入
及びキュア工程で、樹脂硬化収縮により完全製品の銅ベ
ース４の反りはある程度少なくなることが判った。結果
を次に示す。
即ち完成製品の銅ペース反り輩としては、製品をセット
に取υ付は時放熱グリースを塗布することから、反り量
が５０μ以下であれば実用上問題なく、また凸状反りに
ついてり、製品ねじ締め取ｐ付は時略Ｏμに強制修正さ
れることから、上記サンプルナンバーＢ−Ｅについては
、製品として適正反り量と云える。但し銅ペース４を余
ｔ）厚くすると部品コストが商くなるため、安価な製品
とするにはラングルナンバーＢが適当である。
本発明による他寸法部品を使用した場合の鋼ペース長ｅ
とＣ、Ｄ、　Ｂ基板の半田付は時における銅ベース４０
反り鼠りとの関係を第２図に示す。上記実施例及び第２
図から通常、製品においては熱抵抗を最小限に抑えるた
め、セラミック基板２は０．５〜０．６間厚を使用する
ことを加味すると、当製品群の銅ベース反９敞′５１：
適正に保つには、熱膨張による（半田付は時の）銅伸び
鼠の３５倍以上の銅ベース厚にすることが必要である（
３５×Δｌ≦ｔ）。本発明による実施例に基つく銅ペー
ス適正最小厚さと反り量を下表に示す。
この表でΔｌはＣ，Ｄ、Ｂ基板と銅ペースを半田付けす
る際の銅ベース熱膨張伸び激（温度差Ｊ　Ｔ　＝　ｌ　
６０　ｃ、　）　テロ　ル。即ちコノ表はＣ，Ｄ。
Ｂ基板と銅ペース４を半田付けするまでの半製品の表で
あり、反り量が８０μ付近まであっても、後のキャステ
ィング及びキュア工程で反υ量は５０μ以下となる。つ
まＰ）第２図の点線は完成品で銅ベース反り鼠が５０μ
以下となる曳界腺で、この点測以内ならは間軸とならな
い製品が得られるわけである。
〔発明の効果〕
本発明によれば、Ｃ，Ｄ、Ｂ基板と銅ペースとのバイメ
タル効果による銅ペース及びＣ，Ｄ、　Ｂ基敗反ジ応力
を銅ベース厚さ方向に逃かし、Ｃ，Ｄ、Ｂ基板との接合
向のみを変形させ、銅ペース全体としては曲げ変形の発
生を生じさせなくしているため、銅ペースはほぼ平坦に
仕上がる。従って後工程のケース指宿時、ケース接着面
と各面にわたり平滑に接し、指宿が容易でかつ強靭な接
着力を保持できると共に、完成製品においてはねじ締め
付は固定を使用装置に行なっても、廟ペースの反りが最
小限に抑えられているため、放熱損失は極めて少ない。
また製品取り付は時のねじ締めに際しても、銅ペース自
体が平坦であるため、製品内部の半導体テップ及びＣ，
Ｄ、Ｂ基数の損傷は起こり得なく、製品の信頼性も高い
。こうして従来、組みＳｌて工程のケース接動不良の多
発、鋼ペース反りによる放熱損失大なるがゆえの・ぐワ
ー損失、耐湿性劣化、温度サイクルによるケースと１１
「１ベースの剥離等の種々の間−発生があったものが、
本発明により全て解決できるものである。
【図面の簡単な説明】
第１図は従来の半導体装置及び本発明の一実施例の説明
に用いる装置の一部切欠側面図、第２図は同実施例の特
性説明（８）である。 １・・・銅または銅合金シート、２・・・非金属（セラ
・ミンク）耐火し斜板、３・・・半導体テップ、４・・
・銅ペース。 出願人代理人　弁理士　鈴　江　武　彦器トダμｓ−喰
旦 」：

Claims (1)

    【特許請求の範囲】
  1. 銅または銅合金のシートを非金属耐火材料板の少くとも
    一面に直接接合させた基板と、この基数上に設けられる
    半導体チップと、前記基数に接合され放熱板を兼ねる銅
    ペースとを具備し、該銅ペースは、前記基板と加熱接合
    させる時に熱膨張する前記銅ペースの伸び量の少くとも
    ３５倍以上の厚さを有することを特徴とする半導体装置
    。
JP58221564A 1983-11-25 1983-11-25 半導体装置 Pending JPS60113931A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58221564A JPS60113931A (ja) 1983-11-25 1983-11-25 半導体装置
DE8484114132T DE3473972D1 (en) 1983-11-25 1984-11-22 Semiconductor device comprising a substrate
EP84114132A EP0144866B1 (en) 1983-11-25 1984-11-22 Semiconductor device comprising a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58221564A JPS60113931A (ja) 1983-11-25 1983-11-25 半導体装置

Publications (1)

Publication Number Publication Date
JPS60113931A true JPS60113931A (ja) 1985-06-20

Family

ID=16768703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58221564A Pending JPS60113931A (ja) 1983-11-25 1983-11-25 半導体装置

Country Status (3)

Country Link
EP (1) EP0144866B1 (ja)
JP (1) JPS60113931A (ja)
DE (1) DE3473972D1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770642B2 (ja) * 1989-03-30 1995-07-31 三菱電機株式会社 半導体装置
JP2504610B2 (ja) * 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
DE4338706A1 (de) * 1993-08-24 1995-05-04 Schulz Harder Juergen Mehrschicht-Substrat
DE4328353C2 (de) * 1993-08-17 1996-06-05 Schulz Harder Juergen Mehrschicht-Substrat
EP0650193A3 (en) * 1993-10-25 1996-07-31 Toshiba Kk Semiconductor device and method for its production.
DE19615481C5 (de) * 1996-04-03 2013-03-14 Curamik Electronics Gmbh Gewölbtes Metall-Keramik-Substrat
DE10333329B4 (de) * 2003-07-23 2011-07-21 SEMIKRON Elektronik GmbH & Co. KG, 90431 Leistungshalbleitermodul mit biegesteifer Grundplatte
CN105900231B (zh) * 2014-07-18 2018-09-07 富士电机株式会社 半导体装置
DE102019209082B3 (de) * 2019-06-24 2020-06-04 Siemens Aktiengesellschaft Befestigung von Leistungshalbleiterbauelementen auf gekrümmten Oberflächen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132333A (en) * 1981-02-09 1982-08-16 Hitachi Ltd Module device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29325E (en) * 1971-01-26 1977-07-26 Minnesota Mining And Manufacturing Company Hermetic power package
DE2806099A1 (de) * 1977-02-17 1978-08-24 Varian Associates Halbleiter-baugruppe
DE3127457C2 (de) * 1981-07-11 1985-09-12 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichtermodul

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132333A (en) * 1981-02-09 1982-08-16 Hitachi Ltd Module device

Also Published As

Publication number Publication date
EP0144866A2 (en) 1985-06-19
EP0144866B1 (en) 1988-09-07
DE3473972D1 (en) 1988-10-13
EP0144866A3 (en) 1985-09-04

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