JP2004538648A - トレンチゲート電極を有するｍｉｓデバイス及びその製造方法 - Google Patents

トレンチゲート電極を有するｍｉｓデバイス及びその製造方法 Download PDF

Info

Publication number
JP2004538648A
JP2004538648A JP2003520004A JP2003520004A JP2004538648A JP 2004538648 A JP2004538648 A JP 2004538648A JP 2003520004 A JP2003520004 A JP 2003520004A JP 2003520004 A JP2003520004 A JP 2003520004A JP 2004538648 A JP2004538648 A JP 2004538648A
Authority
JP
Japan
Prior art keywords
insulating layer
trench
region
adjacent
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003520004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004538648A5 (enExample
Inventor
ダーウィッシュ，モハメド，エヌ．
ジャイルズ，フレデリック，ピー．
ホン ルイ，カム
チェン，クオ−イン
テリル，カイル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JP2004538648A publication Critical patent/JP2004538648A/ja
Publication of JP2004538648A5 publication Critical patent/JP2004538648A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003520004A 2001-08-10 2002-07-19 トレンチゲート電極を有するｍｉｓデバイス及びその製造方法 Pending JP2004538648A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/927,320 US6882000B2 (en) 2001-08-10 2001-08-10 Trench MIS device with reduced gate-to-drain capacitance
PCT/US2002/022937 WO2003015179A2 (en) 2001-08-10 2002-07-19 Mis device having a trench gate electrode and method of making the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009175470A Division JP5500898B2 (ja) 2001-08-10 2009-07-28 トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2004538648A true JP2004538648A (ja) 2004-12-24
JP2004538648A5 JP2004538648A5 (enExample) 2006-01-05

Family

ID=25454563

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003520004A Pending JP2004538648A (ja) 2001-08-10 2002-07-19 トレンチゲート電極を有するｍｉｓデバイス及びその製造方法
JP2009175470A Expired - Lifetime JP5500898B2 (ja) 2001-08-10 2009-07-28 トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009175470A Expired - Lifetime JP5500898B2 (ja) 2001-08-10 2009-07-28 トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法

Country Status (6)

Country Link
US (2) US6882000B2 (enExample)
EP (1) EP1417717A2 (enExample)
JP (2) JP2004538648A (enExample)
KR (1) KR100624683B1 (enExample)
TW (1) TW552680B (enExample)
WO (1) WO2003015179A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207935A (ja) * 2006-01-31 2007-08-16 Fuji Electric Holdings Co Ltd 炭化珪素半導体素子の製造方法
JP2009283969A (ja) * 2001-08-10 2009-12-03 Siliconix Inc トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法
JP2012033937A (ja) * 2010-08-02 2012-02-16 O2 Micro Inc トレンチ型金属酸化膜半導体電界効果トランジスタを作製する方法

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9063191B2 (en) * 2012-02-24 2015-06-23 Power Probe, Inc. Electrical test device and method
US6291298B1 (en) * 1999-05-25 2001-09-18 Advanced Analogic Technologies, Inc. Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
WO2003015180A2 (en) * 2001-08-10 2003-02-20 Siliconix Incorporated Mis device having a trench gate electrode and method of making the same
US6781196B2 (en) * 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure
US6838722B2 (en) * 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US8629019B2 (en) 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US8080459B2 (en) * 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP2006030318A (ja) * 2004-07-12 2006-02-02 Sanyo Electric Co Ltd 表示装置
US7494876B1 (en) 2005-04-21 2009-02-24 Vishay Siliconix Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
EP1742257B1 (en) * 2005-07-08 2012-09-05 STMicroelectronics Srl Method of manufacturing a semiconductor power device
US9111754B2 (en) * 2005-07-26 2015-08-18 Vishay-Siliconix Floating gate structure with high electrostatic discharge performance
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
KR100909777B1 (ko) * 2006-07-28 2009-07-29 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
US8159021B2 (en) * 2008-02-20 2012-04-17 Force-Mos Technology Corporation Trench MOSFET with double epitaxial structure
US8426275B2 (en) 2009-01-09 2013-04-23 Niko Semiconductor Co., Ltd. Fabrication method of trenched power MOSFET
TWI435447B (zh) * 2009-01-09 2014-04-21 Niko Semiconductor Co Ltd 功率金氧半導體場效電晶體及其製造方法
US9443974B2 (en) * 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
US8105903B2 (en) * 2009-09-21 2012-01-31 Force Mos Technology Co., Ltd. Method for making a trench MOSFET with shallow trench structures
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US9306056B2 (en) * 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
KR101728363B1 (ko) 2010-03-02 2017-05-02 비쉐이-실리코닉스 듀얼 게이트 디바이스의 구조 및 제조 방법
US8748977B2 (en) 2011-03-23 2014-06-10 Panasonic Corporation Semiconductor device and method for producing same
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
WO2013013698A1 (en) * 2011-07-22 2013-01-31 X-Fab Semiconductor Foundries Ag A semiconductor device
CN103247529B (zh) * 2012-02-10 2016-08-03 无锡华润上华半导体有限公司 一种沟槽场效应器件及其制作方法
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US8802530B2 (en) * 2012-06-06 2014-08-12 Alpha And Omega Semiconductor Incorporated MOSFET with improved performance through induced net charge region in thick bottom insulator
JP5799046B2 (ja) 2013-03-22 2015-10-21 株式会社東芝 半導体装置
CN103311112B (zh) * 2013-06-14 2016-01-27 矽力杰半导体技术(杭州)有限公司 在沟槽内形成多晶硅的方法
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
CN109273534A (zh) * 2018-10-30 2019-01-25 贵州恒芯微电子科技有限公司 一种新型屏蔽栅功率mos的器件
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
CN110896026A (zh) 2019-11-22 2020-03-20 矽力杰半导体技术(杭州)有限公司 沟槽型mosfet结构及其制造方法
CN111129152B (zh) * 2019-12-17 2023-09-26 杭州芯迈半导体技术有限公司 沟槽mosfet结构及其制造方法
CN111554746B (zh) 2020-04-23 2022-09-16 杭州芯迈半导体技术有限公司 碳化硅mosfet器件及其制造方法
CN112735954B (zh) * 2020-12-30 2021-12-14 深圳市汇德科技有限公司 一种半导体芯片的制造方法
CN113437137A (zh) * 2021-08-09 2021-09-24 无锡新洁能股份有限公司 快恢复功率mosfet及其制造方法
CN114975126B (zh) * 2022-07-29 2022-10-25 威晟半导体科技(广州)有限公司 一种降低栅电荷的屏蔽栅沟槽型mosfet制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032331A (ja) * 1996-07-15 1998-02-03 Nec Corp 半導体装置及びその製造方法
WO2000072372A1 (en) * 1999-05-25 2000-11-30 Williams Richard K Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
JP2004538649A (ja) * 2001-08-10 2004-12-24 シリコニックス インコーポレーテッド 活性トレンチコーナおよび厚底の酸化物を備えたトレンチｍｉｓデバイス、ならびにこれを製造する方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620108B2 (ja) * 1987-03-23 1994-03-16 三菱電機株式会社 半導体装置の製造方法
JPS63237460A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US5183774A (en) * 1987-11-17 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
US5183772A (en) 1989-05-10 1993-02-02 Samsung Electronics Co., Ltd. Manufacturing method for a DRAM cell
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
US5424231A (en) 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor
WO1998004004A1 (en) 1996-07-19 1998-01-29 Siliconix Incorporated High density trench dmos transistor with trench bottom implant
JP3705919B2 (ja) * 1998-03-05 2005-10-12 三菱電機株式会社 半導体装置及びその製造方法
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP2000100928A (ja) * 1998-09-21 2000-04-07 Kawasaki Steel Corp 半導体装置およびその製造方法
JP2000195945A (ja) * 1998-12-25 2000-07-14 Fujitsu Ltd 半導体装置の製造方法
US6071794A (en) * 1999-06-01 2000-06-06 Mosel Vitelic, Inc. Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulator
JP2001024055A (ja) * 1999-07-06 2001-01-26 Matsushita Electronics Industry Corp 半導体装置の製造方法
DE19935442C1 (de) * 1999-07-28 2000-12-21 Siemens Ag Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors
TW411553B (en) * 1999-08-04 2000-11-11 Mosel Vitelic Inc Method for forming curved oxide on bottom of trench
JP3384365B2 (ja) * 1999-08-23 2003-03-10 日本電気株式会社 縦型ｍｏｓ電界効果トランジスタおよびその製造方法
JP4379982B2 (ja) * 1999-11-16 2009-12-09 トヨタ自動車株式会社 半導体装置の製造方法
US6391699B1 (en) * 2000-06-05 2002-05-21 Fairchild Semiconductor Corporation Method of manufacturing a trench MOSFET using selective growth epitaxy
US6444528B1 (en) * 2000-08-16 2002-09-03 Fairchild Semiconductor Corporation Selective oxide deposition in the bottom of a trench
US6437386B1 (en) * 2000-08-16 2002-08-20 Fairchild Semiconductor Corporation Method for creating thick oxide on the bottom surface of a trench structure in silicon
US6882000B2 (en) * 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032331A (ja) * 1996-07-15 1998-02-03 Nec Corp 半導体装置及びその製造方法
WO2000072372A1 (en) * 1999-05-25 2000-11-30 Williams Richard K Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
JP2004538649A (ja) * 2001-08-10 2004-12-24 シリコニックス インコーポレーテッド 活性トレンチコーナおよび厚底の酸化物を備えたトレンチｍｉｓデバイス、ならびにこれを製造する方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283969A (ja) * 2001-08-10 2009-12-03 Siliconix Inc トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法
JP2007207935A (ja) * 2006-01-31 2007-08-16 Fuji Electric Holdings Co Ltd 炭化珪素半導体素子の製造方法
JP2012033937A (ja) * 2010-08-02 2012-02-16 O2 Micro Inc トレンチ型金属酸化膜半導体電界効果トランジスタを作製する方法

Also Published As

Publication number Publication date
US20030062570A1 (en) 2003-04-03
WO2003015179A3 (en) 2003-12-04
US20030030092A1 (en) 2003-02-13
US6921697B2 (en) 2005-07-26
WO2003015179A2 (en) 2003-02-20
JP5500898B2 (ja) 2014-05-21
TW552680B (en) 2003-09-11
KR100624683B1 (ko) 2006-09-19
US6882000B2 (en) 2005-04-19
EP1417717A2 (en) 2004-05-12
KR20040051584A (ko) 2004-06-18
JP2009283969A (ja) 2009-12-03

Similar Documents

Publication Publication Date Title
JP5500898B2 (ja) トレンチゲート電極を有する金属−絶縁体−半導体デバイスの製造方法
US6903412B2 (en) Trench MIS device with graduated gate oxide layer
CN100365826C (zh) 沟槽型功率金属氧化物半导体栅器件
US7416947B2 (en) Method of fabricating trench MIS device with thick oxide layer in bottom of trench
JP4632639B2 (ja) 選択的酸化物付着形成によるトレンチ底部における厚い酸化物の形成
US6437386B1 (en) Method for creating thick oxide on the bottom surface of a trench structure in silicon
US20080211015A1 (en) Method of manufacturing a semiconductor power device
CN111415867A (zh) 一种半导体功率器件结构及其制造方法
EP1536480A1 (en) Semiconductor power device with insulated gate, trenchgate structure and corresponding manufacturing method
CN107910266B (zh) 功率半导体器件及其制造方法
JP3965027B2 (ja) トレンチ底部に厚いポリシリコン絶縁層を有するトレンチゲート型ｍｉｓデバイスの製造方法
US7494876B1 (en) Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
US20070063272A1 (en) Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereof
JP4299665B2 (ja) 活性トレンチコーナおよび厚底の酸化物を備えたトレンチｍｉｓデバイス、ならびにこれを製造する方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050713

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081104

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090120

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090304

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090331

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090902