JP2004521483A5 - - Google Patents
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- Publication number
- JP2004521483A5 JP2004521483A5 JP2002540202A JP2002540202A JP2004521483A5 JP 2004521483 A5 JP2004521483 A5 JP 2004521483A5 JP 2002540202 A JP2002540202 A JP 2002540202A JP 2002540202 A JP2002540202 A JP 2002540202A JP 2004521483 A5 JP2004521483 A5 JP 2004521483A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- flash memory
- source
- oxide
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000007943 implant Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000001802 infusion Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/699,711 US6653189B1 (en) | 2000-10-30 | 2000-10-30 | Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory |
| US09/699,711 | 2000-10-30 | ||
| PCT/US2001/024680 WO2002037551A1 (en) | 2000-10-30 | 2001-08-06 | Non-volatile memory with source side boron implantation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004521483A JP2004521483A (ja) | 2004-07-15 |
| JP2004521483A5 true JP2004521483A5 (https=) | 2005-04-07 |
| JP4944352B2 JP4944352B2 (ja) | 2012-05-30 |
Family
ID=24810556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002540202A Expired - Fee Related JP4944352B2 (ja) | 2000-10-30 | 2001-08-06 | フラッシュメモリセルの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6653189B1 (https=) |
| EP (1) | EP1356505A1 (https=) |
| JP (1) | JP4944352B2 (https=) |
| KR (1) | KR100838382B1 (https=) |
| CN (1) | CN1293617C (https=) |
| AU (1) | AU2001279213A1 (https=) |
| TW (1) | TWI248675B (https=) |
| WO (1) | WO2002037551A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100567757B1 (ko) * | 2003-12-30 | 2006-04-05 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
| KR100604846B1 (ko) * | 2004-04-23 | 2006-07-31 | 삼성전자주식회사 | 다층의 유전체층을 포함하는 메모리 소자 및 그 제조 방법 |
| US7157335B1 (en) * | 2004-08-13 | 2007-01-02 | Spansion Llc | Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices |
| KR100898440B1 (ko) * | 2007-06-27 | 2009-05-21 | 주식회사 동부하이텍 | 플래시 메모리 소자의 제조 방법 |
| WO2009045964A1 (en) * | 2007-10-01 | 2009-04-09 | Applied Materials, Inc. | Low temperature conformal oxide formation and applications |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2585262B2 (ja) * | 1987-04-24 | 1997-02-26 | シチズン時計株式会社 | 半導体不揮発性メモリ |
| US5276344A (en) | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
| JPH05283710A (ja) | 1991-12-06 | 1993-10-29 | Intel Corp | 高電圧ｍｏｓトランジスタ及びその製造方法 |
| JPH0685278A (ja) * | 1992-09-07 | 1994-03-25 | Hitachi Ltd | 半導体装置の製造方法 |
| JP3288099B2 (ja) * | 1992-12-28 | 2002-06-04 | 新日本製鐵株式会社 | 不揮発性半導体記憶装置及びその書き換え方法 |
| US5592003A (en) | 1992-12-28 | 1997-01-07 | Nippon Steel Corporation | Nonvolatile semiconductor memory and method of rewriting data thereto |
| JPH06291330A (ja) | 1993-03-31 | 1994-10-18 | Citizen Watch Co Ltd | 半導体不揮発性記憶素子とその製造方法 |
| JPH06296029A (ja) * | 1993-04-08 | 1994-10-21 | Citizen Watch Co Ltd | 半導体不揮発性記憶素子とその製造方法 |
| DE69413960T2 (de) * | 1994-07-18 | 1999-04-01 | Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano | Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung |
| US5429970A (en) | 1994-07-18 | 1995-07-04 | United Microelectronics Corporation | Method of making flash EEPROM memory cell |
| US5518942A (en) * | 1995-02-22 | 1996-05-21 | Alliance Semiconductor Corporation | Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant |
| JP2956549B2 (ja) | 1995-09-14 | 1999-10-04 | 日本電気株式会社 | 半導体記憶装置及びその製造方法とデータ消去方法 |
| JPH0997884A (ja) * | 1995-10-02 | 1997-04-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US5882970A (en) | 1995-11-03 | 1999-03-16 | United Microelectronics Corporation | Method for fabricating flash memory cell having a decreased overlapped region between its source and gate |
| US5589413A (en) | 1995-11-27 | 1996-12-31 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing self-aligned bit-line during EPROM fabrication |
| TW437099B (en) * | 1997-09-26 | 2001-05-28 | Matsushita Electronics Corp | Non-volatile semiconductor memory device and the manufacturing method thereof |
| US5888870A (en) | 1997-10-22 | 1999-03-30 | Advanced Micro Devices, Inc. | Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate |
| US5933729A (en) | 1997-12-08 | 1999-08-03 | Advanced Micro Devices, Inc. | Reduction of ONO fence during self-aligned etch to eliminate poly stringers |
| KR100308133B1 (ko) * | 1999-01-12 | 2001-09-26 | 김영환 | 듀얼 게이트 모스 트랜지스터 제조방법 |
| TW407348B (en) | 1999-02-03 | 2000-10-01 | United Microelectronics Corp | Manufacture of the flash memory |
| US6180456B1 (en) * | 1999-02-17 | 2001-01-30 | International Business Machines Corporation | Triple polysilicon embedded NVRAM cell and method thereof |
| US6163482A (en) * | 1999-08-19 | 2000-12-19 | Worldwide Semiconductor Manufacturing Corporation | One transistor EEPROM cell using ferro-electric spacer |
| US6524914B1 (en) * | 2000-10-30 | 2003-02-25 | Advanced Micro Devices, Inc. | Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory |
-
2000
- 2000-10-30 US US09/699,711 patent/US6653189B1/en not_active Expired - Lifetime
-
2001
- 2001-08-06 WO PCT/US2001/024680 patent/WO2002037551A1/en not_active Ceased
- 2001-08-06 JP JP2002540202A patent/JP4944352B2/ja not_active Expired - Fee Related
- 2001-08-06 EP EP01957475A patent/EP1356505A1/en not_active Ceased
- 2001-08-06 CN CNB018170277A patent/CN1293617C/zh not_active Expired - Fee Related
- 2001-08-06 AU AU2001279213A patent/AU2001279213A1/en not_active Abandoned
- 2001-08-06 KR KR1020037005904A patent/KR100838382B1/ko not_active Expired - Fee Related
- 2001-10-08 TW TW090124785A patent/TWI248675B/zh not_active IP Right Cessation
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