CN1293617C - 对于深次0.18微米闪存的源极侧硼注入及漏极侧mdd注入 - Google Patents

对于深次0.18微米闪存的源极侧硼注入及漏极侧mdd注入 Download PDF

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Publication number
CN1293617C
CN1293617C CNB018170277A CN01817027A CN1293617C CN 1293617 C CN1293617 C CN 1293617C CN B018170277 A CNB018170277 A CN B018170277A CN 01817027 A CN01817027 A CN 01817027A CN 1293617 C CN1293617 C CN 1293617C
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China
Prior art keywords
substrate
source
mask
oxide
atoms
Prior art date
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Expired - Fee Related
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CNB018170277A
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English (en)
Chinese (zh)
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CN1468447A (zh
Inventor
S·哈达
M·W·兰道夫
何月松
T·图尔盖特
张稷
黄雅之
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Cypress Semiconductor Corp
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Advanced Micro Devices Inc
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Publication of CN1293617C publication Critical patent/CN1293617C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB018170277A 2000-10-30 2001-08-06 对于深次0.18微米闪存的源极侧硼注入及漏极侧mdd注入 Expired - Fee Related CN1293617C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/699,711 US6653189B1 (en) 2000-10-30 2000-10-30 Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
US09/699,711 2000-10-30

Publications (2)

Publication Number Publication Date
CN1468447A CN1468447A (zh) 2004-01-14
CN1293617C true CN1293617C (zh) 2007-01-03

Family

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Family Applications (1)

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CNB018170277A Expired - Fee Related CN1293617C (zh) 2000-10-30 2001-08-06 对于深次0.18微米闪存的源极侧硼注入及漏极侧mdd注入

Country Status (8)

Country Link
US (1) US6653189B1 (https=)
EP (1) EP1356505A1 (https=)
JP (1) JP4944352B2 (https=)
KR (1) KR100838382B1 (https=)
CN (1) CN1293617C (https=)
AU (1) AU2001279213A1 (https=)
TW (1) TWI248675B (https=)
WO (1) WO2002037551A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567757B1 (ko) * 2003-12-30 2006-04-05 동부아남반도체 주식회사 반도체 소자의 제조 방법
KR100604846B1 (ko) * 2004-04-23 2006-07-31 삼성전자주식회사 다층의 유전체층을 포함하는 메모리 소자 및 그 제조 방법
US7157335B1 (en) * 2004-08-13 2007-01-02 Spansion Llc Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices
KR100898440B1 (ko) * 2007-06-27 2009-05-21 주식회사 동부하이텍 플래시 메모리 소자의 제조 방법
WO2009045964A1 (en) * 2007-10-01 2009-04-09 Applied Materials, Inc. Low temperature conformal oxide formation and applications

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585262B2 (ja) * 1987-04-24 1997-02-26 シチズン時計株式会社 半導体不揮発性メモリ
US5276344A (en) 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
JPH05283710A (ja) 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
JP3288099B2 (ja) * 1992-12-28 2002-06-04 新日本製鐵株式会社 不揮発性半導体記憶装置及びその書き換え方法
US5592003A (en) 1992-12-28 1997-01-07 Nippon Steel Corporation Nonvolatile semiconductor memory and method of rewriting data thereto
JPH06291330A (ja) 1993-03-31 1994-10-18 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
DE69413960T2 (de) * 1994-07-18 1999-04-01 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung
US5429970A (en) 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5518942A (en) * 1995-02-22 1996-05-21 Alliance Semiconductor Corporation Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant
JP2956549B2 (ja) 1995-09-14 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法とデータ消去方法
JPH0997884A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5882970A (en) 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
US5589413A (en) 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
TW437099B (en) * 1997-09-26 2001-05-28 Matsushita Electronics Corp Non-volatile semiconductor memory device and the manufacturing method thereof
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
US5933729A (en) 1997-12-08 1999-08-03 Advanced Micro Devices, Inc. Reduction of ONO fence during self-aligned etch to eliminate poly stringers
KR100308133B1 (ko) * 1999-01-12 2001-09-26 김영환 듀얼 게이트 모스 트랜지스터 제조방법
TW407348B (en) 1999-02-03 2000-10-01 United Microelectronics Corp Manufacture of the flash memory
US6180456B1 (en) * 1999-02-17 2001-01-30 International Business Machines Corporation Triple polysilicon embedded NVRAM cell and method thereof
US6163482A (en) * 1999-08-19 2000-12-19 Worldwide Semiconductor Manufacturing Corporation One transistor EEPROM cell using ferro-electric spacer
US6524914B1 (en) * 2000-10-30 2003-02-25 Advanced Micro Devices, Inc. Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory

Also Published As

Publication number Publication date
JP4944352B2 (ja) 2012-05-30
WO2002037551A1 (en) 2002-05-10
US6653189B1 (en) 2003-11-25
TWI248675B (en) 2006-02-01
AU2001279213A1 (en) 2002-05-15
KR100838382B1 (ko) 2008-06-13
EP1356505A1 (en) 2003-10-29
CN1468447A (zh) 2004-01-14
JP2004521483A (ja) 2004-07-15
KR20030045151A (ko) 2003-06-09

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