TWI248675B - Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory - Google Patents

Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory Download PDF

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Publication number
TWI248675B
TWI248675B TW090124785A TW90124785A TWI248675B TW I248675 B TWI248675 B TW I248675B TW 090124785 A TW090124785 A TW 090124785A TW 90124785 A TW90124785 A TW 90124785A TW I248675 B TWI248675 B TW I248675B
Authority
TW
Taiwan
Prior art keywords
source
substrate
flash memory
implant
reticle
Prior art date
Application number
TW090124785A
Other languages
English (en)
Chinese (zh)
Inventor
Sameer Haddad
Yue-Song He
Timothy Thurgate
Chi Chang
Mark W Randolph
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TWI248675B publication Critical patent/TWI248675B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW090124785A 2000-10-30 2001-10-08 Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory TWI248675B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/699,711 US6653189B1 (en) 2000-10-30 2000-10-30 Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory

Publications (1)

Publication Number Publication Date
TWI248675B true TWI248675B (en) 2006-02-01

Family

ID=24810556

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090124785A TWI248675B (en) 2000-10-30 2001-10-08 Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory

Country Status (8)

Country Link
US (1) US6653189B1 (https=)
EP (1) EP1356505A1 (https=)
JP (1) JP4944352B2 (https=)
KR (1) KR100838382B1 (https=)
CN (1) CN1293617C (https=)
AU (1) AU2001279213A1 (https=)
TW (1) TWI248675B (https=)
WO (1) WO2002037551A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567757B1 (ko) * 2003-12-30 2006-04-05 동부아남반도체 주식회사 반도체 소자의 제조 방법
KR100604846B1 (ko) * 2004-04-23 2006-07-31 삼성전자주식회사 다층의 유전체층을 포함하는 메모리 소자 및 그 제조 방법
US7157335B1 (en) * 2004-08-13 2007-01-02 Spansion Llc Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices
KR100898440B1 (ko) * 2007-06-27 2009-05-21 주식회사 동부하이텍 플래시 메모리 소자의 제조 방법
WO2009045964A1 (en) * 2007-10-01 2009-04-09 Applied Materials, Inc. Low temperature conformal oxide formation and applications

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JP2585262B2 (ja) * 1987-04-24 1997-02-26 シチズン時計株式会社 半導体不揮発性メモリ
US5276344A (en) 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
JPH05283710A (ja) 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
JP3288099B2 (ja) * 1992-12-28 2002-06-04 新日本製鐵株式会社 不揮発性半導体記憶装置及びその書き換え方法
US5592003A (en) 1992-12-28 1997-01-07 Nippon Steel Corporation Nonvolatile semiconductor memory and method of rewriting data thereto
JPH06291330A (ja) 1993-03-31 1994-10-18 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
DE69413960T2 (de) * 1994-07-18 1999-04-01 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung
US5429970A (en) 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5518942A (en) * 1995-02-22 1996-05-21 Alliance Semiconductor Corporation Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant
JP2956549B2 (ja) 1995-09-14 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法とデータ消去方法
JPH0997884A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5882970A (en) 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
US5589413A (en) 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
TW437099B (en) * 1997-09-26 2001-05-28 Matsushita Electronics Corp Non-volatile semiconductor memory device and the manufacturing method thereof
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
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KR100308133B1 (ko) * 1999-01-12 2001-09-26 김영환 듀얼 게이트 모스 트랜지스터 제조방법
TW407348B (en) 1999-02-03 2000-10-01 United Microelectronics Corp Manufacture of the flash memory
US6180456B1 (en) * 1999-02-17 2001-01-30 International Business Machines Corporation Triple polysilicon embedded NVRAM cell and method thereof
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US6524914B1 (en) * 2000-10-30 2003-02-25 Advanced Micro Devices, Inc. Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory

Also Published As

Publication number Publication date
JP4944352B2 (ja) 2012-05-30
WO2002037551A1 (en) 2002-05-10
US6653189B1 (en) 2003-11-25
AU2001279213A1 (en) 2002-05-15
KR100838382B1 (ko) 2008-06-13
EP1356505A1 (en) 2003-10-29
CN1468447A (zh) 2004-01-14
JP2004521483A (ja) 2004-07-15
CN1293617C (zh) 2007-01-03
KR20030045151A (ko) 2003-06-09

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