JP2000332237A5 - - Google Patents
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- Publication number
- JP2000332237A5 JP2000332237A5 JP1999135236A JP13523699A JP2000332237A5 JP 2000332237 A5 JP2000332237 A5 JP 2000332237A5 JP 1999135236 A JP1999135236 A JP 1999135236A JP 13523699 A JP13523699 A JP 13523699A JP 2000332237 A5 JP2000332237 A5 JP 2000332237A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating film
- main surface
- channel
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 41
- 108091006146 Channels Proteins 0.000 description 33
- 239000000758 substrate Substances 0.000 description 27
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- -1 nitrogen ions Chemical class 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11135236A JP2000332237A (ja) | 1999-05-17 | 1999-05-17 | 半導体装置の製造方法 |
| US09/441,889 US6770550B2 (en) | 1999-05-17 | 1999-11-17 | Semiconductor device manufacturing method |
| KR1020000005066A KR100315900B1 (ko) | 1999-05-17 | 2000-02-02 | 반도체 장치의 제조 방법 |
| TW089109798A TW461114B (en) | 1999-05-17 | 2000-05-17 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11135236A JP2000332237A (ja) | 1999-05-17 | 1999-05-17 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000332237A JP2000332237A (ja) | 2000-11-30 |
| JP2000332237A5 true JP2000332237A5 (https=) | 2006-06-15 |
Family
ID=15147005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11135236A Pending JP2000332237A (ja) | 1999-05-17 | 1999-05-17 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6770550B2 (https=) |
| JP (1) | JP2000332237A (https=) |
| KR (1) | KR100315900B1 (https=) |
| TW (1) | TW461114B (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001196581A (ja) * | 2000-01-17 | 2001-07-19 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2002208645A (ja) * | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6531410B2 (en) * | 2001-02-27 | 2003-03-11 | International Business Machines Corporation | Intrinsic dual gate oxide MOSFET using a damascene gate process |
| JP4152598B2 (ja) * | 2001-03-16 | 2008-09-17 | スパンション エルエルシー | 半導体装置の製造方法 |
| JP2002313966A (ja) * | 2001-04-16 | 2002-10-25 | Yasuo Tarui | トランジスタ型強誘電体不揮発性記憶素子とその製造方法 |
| US6649460B2 (en) * | 2001-10-25 | 2003-11-18 | International Business Machines Corporation | Fabricating a substantially self-aligned MOSFET |
| US7132698B2 (en) * | 2002-01-25 | 2006-11-07 | International Rectifier Corporation | Compression assembled electronic package having a plastic molded insulation ring |
| DE10240893A1 (de) | 2002-09-04 | 2004-03-18 | Infineon Technologies Ag | Verfahren zur Herstellung von SONOS-Speicherzellen, SONOS-Speicherzelle und Speicherzellenfeld |
| US20050124127A1 (en) * | 2003-12-04 | 2005-06-09 | Tzu-En Ho | Method for manufacturing gate structure for use in semiconductor device |
| TWI295085B (en) * | 2003-12-05 | 2008-03-21 | Int Rectifier Corp | Field effect transistor with enhanced insulator structure |
| US7235431B2 (en) * | 2004-09-02 | 2007-06-26 | Micron Technology, Inc. | Methods for packaging a plurality of semiconductor dice using a flowable dielectric material |
| KR100741467B1 (ko) * | 2006-07-12 | 2007-07-20 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| KR100734327B1 (ko) * | 2006-07-18 | 2007-07-02 | 삼성전자주식회사 | 서로 다른 두께의 게이트 절연막들을 구비하는 반도체소자의 제조방법 |
| JP4367523B2 (ja) * | 2007-02-06 | 2009-11-18 | ソニー株式会社 | 絶縁ゲート電界効果トランジスタ及びその製造方法 |
| US7977751B2 (en) | 2007-02-06 | 2011-07-12 | Sony Corporation | Insulated gate field effect transistor and a method of manufacturing the same |
| US8021940B2 (en) * | 2007-12-31 | 2011-09-20 | Intel Corporation | Methods for fabricating PMOS metal gate structures |
| KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP6095927B2 (ja) * | 2012-09-27 | 2017-03-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体集積回路装置 |
| JP2014216377A (ja) * | 2013-04-23 | 2014-11-17 | イビデン株式会社 | 電子部品とその製造方法及び多層プリント配線板の製造方法 |
| CN110537251B (zh) * | 2017-04-25 | 2023-07-04 | 三菱电机株式会社 | 半导体装置 |
| KR102760046B1 (ko) * | 2018-12-14 | 2025-01-24 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
| US11387338B1 (en) * | 2021-01-22 | 2022-07-12 | Applied Materials, Inc. | Methods for forming planar metal-oxide-semiconductor field-effect transistors |
| JP2024042761A (ja) * | 2022-09-16 | 2024-03-29 | キオクシア株式会社 | 半導体装置、および半導体装置の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979241A (en) | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| JPH0669078B2 (ja) | 1983-03-30 | 1994-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH0247838A (ja) | 1988-08-10 | 1990-02-16 | Nec Corp | Ｍｏｓ型半導体装置の製造方法 |
| US5591681A (en) * | 1994-06-03 | 1997-01-07 | Advanced Micro Devices, Inc. | Method for achieving a highly reliable oxide film |
| US5480828A (en) * | 1994-09-30 | 1996-01-02 | Taiwan Semiconductor Manufacturing Corp. Ltd. | Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process |
| US5478436A (en) | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5502009A (en) * | 1995-02-16 | 1996-03-26 | United Microelectronics Corp. | Method for fabricating gate oxide layers of different thicknesses |
| US5985735A (en) * | 1995-09-29 | 1999-11-16 | Intel Corporation | Trench isolation process using nitrogen preconditioning to reduce crystal defects |
| US6319804B1 (en) | 1996-03-27 | 2001-11-20 | Advanced Micro Devices, Inc. | Process to separate the doping of polygate and source drain regions in dual gate field effect transistors |
| US5811347A (en) * | 1996-04-29 | 1998-09-22 | Advanced Micro Devices, Inc. | Nitrogenated trench liner for improved shallow trench isolation |
| US5668035A (en) * | 1996-06-10 | 1997-09-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for fabricating a dual-gate dielectric module for memory with embedded logic technology |
| TW389944B (en) * | 1997-03-17 | 2000-05-11 | United Microelectronics Corp | Method for forming gate oxide layers with different thickness |
| US5920779A (en) * | 1997-05-21 | 1999-07-06 | United Microelectronics Corp. | Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits |
| US5963841A (en) | 1997-08-01 | 1999-10-05 | Advanced Micro Devices, Inc. | Gate pattern formation using a bottom anti-reflective coating |
| US6080682A (en) * | 1997-12-18 | 2000-06-27 | Advanced Micro Devices, Inc. | Methodology for achieving dual gate oxide thicknesses |
| US6033998A (en) * | 1998-03-09 | 2000-03-07 | Lsi Logic Corporation | Method of forming variable thickness gate dielectrics |
| US6156620A (en) * | 1998-07-22 | 2000-12-05 | Lsi Logic Corporation | Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same |
| US6110780A (en) * | 1999-04-01 | 2000-08-29 | Taiwan Semiconductor Manufacturing Company | Using NO or N2 O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory |
| US6063704A (en) | 1999-08-02 | 2000-05-16 | National Semiconductor Corporation | Process for incorporating silicon oxynitride DARC layer into formation of silicide polysilicon contact |
| US6323106B1 (en) * | 1999-09-02 | 2001-11-27 | Lsi Logic Corporation | Dual nitrogen implantation techniques for oxynitride formation in semiconductor devices |
-
1999
- 1999-05-17 JP JP11135236A patent/JP2000332237A/ja active Pending
- 1999-11-17 US US09/441,889 patent/US6770550B2/en not_active Expired - Fee Related
-
2000
- 2000-02-02 KR KR1020000005066A patent/KR100315900B1/ko not_active Expired - Fee Related
- 2000-05-17 TW TW089109798A patent/TW461114B/zh not_active IP Right Cessation
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