CN1868046B - 半导体器件及制造此类半导体器件的方法 - Google Patents
半导体器件及制造此类半导体器件的方法 Download PDFInfo
- Publication number
- CN1868046B CN1868046B CN2004800304247A CN200480030424A CN1868046B CN 1868046 B CN1868046 B CN 1868046B CN 2004800304247 A CN2004800304247 A CN 2004800304247A CN 200480030424 A CN200480030424 A CN 200480030424A CN 1868046 B CN1868046 B CN 1868046B
- Authority
- CN
- China
- Prior art keywords
- region
- extension
- source region
- drain region
- mesozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 4
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 210000004483 pasc Anatomy 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03103857 | 2003-10-17 | ||
EP03103857.3 | 2003-10-17 | ||
PCT/IB2004/052021 WO2005038900A1 (en) | 2003-10-17 | 2004-10-07 | Semiconductor device and method of manufacturing such a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1868046A CN1868046A (zh) | 2006-11-22 |
CN1868046B true CN1868046B (zh) | 2011-12-28 |
Family
ID=34443036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800304247A Active CN1868046B (zh) | 2003-10-17 | 2004-10-07 | 半导体器件及制造此类半导体器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070082450A1 (zh) |
EP (1) | EP1678750A1 (zh) |
JP (1) | JP2007508705A (zh) |
CN (1) | CN1868046B (zh) |
WO (1) | WO2005038900A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101753076B1 (ko) | 2010-02-08 | 2017-07-03 | 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 | 채널과 드레인 영역들 사이의 도핑 영역들을 포함하는 전자 디바이스 및 이를 형성하는 공정 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100653995B1 (ko) * | 2005-03-17 | 2006-12-05 | 주식회사 하이닉스반도체 | 반도체소자 제조를 위한 국부적 임플란트 방법 |
CN102110717B (zh) * | 2011-01-26 | 2013-01-02 | 成都瑞芯电子有限公司 | 沟槽式金属氧化物半导体场效应晶体管及其制造方法 |
CN103579078A (zh) * | 2012-07-31 | 2014-02-12 | 上海华虹Nec电子有限公司 | 抑制浅沟槽隔离工艺中反向窄沟道效应的方法 |
US9640645B2 (en) * | 2013-09-05 | 2017-05-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device with silicide |
CN108962979B (zh) * | 2018-09-12 | 2024-01-02 | 长江存储科技有限责任公司 | 高压器件与半导体器件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
US5015598A (en) * | 1989-11-03 | 1991-05-14 | U.S. Philips Corporation | Method of manufacturing a device comprising MIS transistors having a gate electrode in the form of an inverted "T" |
EP0506427A1 (en) * | 1991-03-27 | 1992-09-30 | STMicroelectronics, Inc. | An integrated gate field-effect transistor with gate-drain overlap and method of making the same |
US5747373A (en) * | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US6083846A (en) * | 1997-01-10 | 2000-07-04 | Advanced Micro Devices, Inc. | Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
US6187620B1 (en) * | 1996-12-06 | 2001-02-13 | Advanced Micro Devices, Inc. | Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
US6284630B1 (en) * | 1999-10-20 | 2001-09-04 | Advanced Micro Devices, Inc. | Method for fabrication of abrupt drain and source extensions for a field effect transistor |
US6380053B1 (en) * | 1999-08-30 | 2002-04-30 | Sony Corporation | Method for producing a semiconductor device with an accurately controlled impurity concentration profile in the extension regions |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686324A (en) * | 1996-03-28 | 1997-11-11 | Mosel Vitelic, Inc. | Process for forming LDD CMOS using large-tilt-angle ion implantation |
US5913124A (en) * | 1997-05-24 | 1999-06-15 | United Microelectronics Corporation | Method of making a self-aligned silicide |
US5970353A (en) * | 1998-03-30 | 1999-10-19 | Advanced Micro Devices, Inc. | Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
US6225176B1 (en) * | 1999-02-22 | 2001-05-01 | Advanced Micro Devices, Inc. | Step drain and source junction formation |
KR100327347B1 (en) * | 2000-07-22 | 2002-03-06 | Samsung Electronics Co Ltd | Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof |
US6406964B1 (en) * | 2000-11-01 | 2002-06-18 | Advanced Micro Devices, Inc. | Method of controlling junction recesses in a semiconductor device |
-
2004
- 2004-10-07 JP JP2006534878A patent/JP2007508705A/ja not_active Withdrawn
- 2004-10-07 WO PCT/IB2004/052021 patent/WO2005038900A1/en active Application Filing
- 2004-10-07 CN CN2004800304247A patent/CN1868046B/zh active Active
- 2004-10-07 EP EP04770207A patent/EP1678750A1/en not_active Withdrawn
- 2004-10-07 US US10/575,288 patent/US20070082450A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
US5015598A (en) * | 1989-11-03 | 1991-05-14 | U.S. Philips Corporation | Method of manufacturing a device comprising MIS transistors having a gate electrode in the form of an inverted "T" |
EP0506427A1 (en) * | 1991-03-27 | 1992-09-30 | STMicroelectronics, Inc. | An integrated gate field-effect transistor with gate-drain overlap and method of making the same |
US5747373A (en) * | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US6187620B1 (en) * | 1996-12-06 | 2001-02-13 | Advanced Micro Devices, Inc. | Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
US6083846A (en) * | 1997-01-10 | 2000-07-04 | Advanced Micro Devices, Inc. | Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
US6380053B1 (en) * | 1999-08-30 | 2002-04-30 | Sony Corporation | Method for producing a semiconductor device with an accurately controlled impurity concentration profile in the extension regions |
US6284630B1 (en) * | 1999-10-20 | 2001-09-04 | Advanced Micro Devices, Inc. | Method for fabrication of abrupt drain and source extensions for a field effect transistor |
Non-Patent Citations (1)
Title |
---|
同上. |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101753076B1 (ko) | 2010-02-08 | 2017-07-03 | 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 | 채널과 드레인 영역들 사이의 도핑 영역들을 포함하는 전자 디바이스 및 이를 형성하는 공정 |
Also Published As
Publication number | Publication date |
---|---|
CN1868046A (zh) | 2006-11-22 |
EP1678750A1 (en) | 2006-07-12 |
US20070082450A1 (en) | 2007-04-12 |
JP2007508705A (ja) | 2007-04-05 |
WO2005038900A1 (en) | 2005-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7939902B2 (en) | Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate | |
US5254490A (en) | Self-aligned method of fabricating an LDD MOSFET device | |
US5937301A (en) | Method of making a semiconductor device having sidewall spacers with improved profiles | |
CN101385133B (zh) | 形成具有不对称电介质区域的半导体器件的方法及其结构 | |
US5753557A (en) | Bridge-free self aligned silicide process | |
US7671426B2 (en) | Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film | |
US20050118793A1 (en) | Schottky-barrier MOSFET manufacturing method using isotropic etch process | |
JP4450267B2 (ja) | Soi−mos電界効果トランジスタ製造方法 | |
KR950002274B1 (ko) | 샐로우 접합을 갖는 mos vlsi장치 및 그 제조방법 | |
US20070194353A1 (en) | Metal source/drain Schottky barrier silicon-on-nothing MOSFET device and method thereof | |
US5804856A (en) | Depleted sidewall-poly LDD transistor | |
US6806126B1 (en) | Method of manufacturing a semiconductor component | |
US7208383B1 (en) | Method of manufacturing a semiconductor component | |
CN1868046B (zh) | 半导体器件及制造此类半导体器件的方法 | |
US20100197124A1 (en) | Methods of Forming Semiconductor Devices Using Plasma Dehydrogenation and Devices Formed Thereby | |
US6312999B1 (en) | Method for forming PLDD structure with minimized lateral dopant diffusion | |
JP3161379B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
KR20000066568A (ko) | 반도체 소자의 제조방법 | |
JP4065797B2 (ja) | 半導体装置及びその製造方法 | |
KR100447783B1 (ko) | 실리사이드층 형성 방법 및이를 이용한 반도체 소자의제조 방법 | |
KR100204015B1 (ko) | 모스트랜지스터 제조방법 | |
KR0137996B1 (ko) | 엘디디 구조의 모스펫 제조방법 | |
KR100921020B1 (ko) | 쇼트키 장벽 관통 트랜지스터 및 그 제조방법 | |
KR20060078024A (ko) | 반도체 소자의 제조 방법 | |
KR20050060534A (ko) | 반도체 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20071012 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071012 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: IMEC CORP. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20120326 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120326 Address after: Leuven Patentee after: IMEC Corp. Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |