US6887773B2
(en)
*
|
2002-06-19 |
2005-05-03 |
Luxtera, Inc. |
Methods of incorporating germanium within CMOS process
|
US7899339B2
(en)
*
|
2002-07-30 |
2011-03-01 |
Amplification Technologies Inc. |
High-sensitivity, high-resolution detector devices and arrays
|
JP3795846B2
(ja)
*
|
2002-08-29 |
2006-07-12 |
富士通株式会社 |
半導体装置
|
US8120079B2
(en)
*
|
2002-09-19 |
2012-02-21 |
Quantum Semiconductor Llc |
Light-sensing device for multi-spectral imaging
|
DE60322233D1
(de)
*
|
2002-09-19 |
2008-08-28 |
Quantum Semiconductor Llc |
Licht-detektierende vorrichtung
|
DE10252878A1
(de)
|
2002-11-12 |
2004-06-03 |
X-Fab Semiconductor Foundries Ag |
In BiCMOS-Technologie monolithisch integrierte verbesserte vertikale pin-Fotodiode
|
US7076124B2
(en)
*
|
2002-12-20 |
2006-07-11 |
Avago Technologies, Ltd. |
Integrated multichannel laser driver and photodetector receiver
|
EP1465258A1
(en)
*
|
2003-02-21 |
2004-10-06 |
STMicroelectronics Limited |
CMOS image sensors
|
US7164182B2
(en)
|
2003-07-07 |
2007-01-16 |
Micron Technology, Inc. |
Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
|
JP3865728B2
(ja)
*
|
2003-12-05 |
2007-01-10 |
シャープ株式会社 |
閾値電圧変調方式のmos型固体撮像素子およびその製造方法
|
DE10357135B4
(de)
|
2003-12-06 |
2007-01-04 |
X-Fab Semiconductor Foundries Ag |
Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
|
DE102004031606B4
(de)
*
|
2004-06-30 |
2009-03-12 |
Infineon Technologies Ag |
Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren
|
JP4654623B2
(ja)
*
|
2004-07-08 |
2011-03-23 |
ソニー株式会社 |
固体撮像装置の製造方法
|
EP1794797B1
(en)
*
|
2004-07-28 |
2015-09-09 |
Quantum Semiconductor, LLC |
Layouts for the monolithic integration of cmos and deposited photonic active layers
|
CN101002326B
(zh)
*
|
2004-07-28 |
2012-07-18 |
量子半导体有限公司 |
与cmos单片集成的光子器件
|
JP4507876B2
(ja)
*
|
2004-12-22 |
2010-07-21 |
ソニー株式会社 |
固体撮像素子
|
US7456384B2
(en)
|
2004-12-10 |
2008-11-25 |
Sony Corporation |
Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
|
KR100672701B1
(ko)
*
|
2004-12-29 |
2007-01-22 |
동부일렉트로닉스 주식회사 |
씨모스(cmos) 이미지 센서 및 그의 제조 방법
|
KR100670539B1
(ko)
*
|
2004-12-30 |
2007-01-16 |
매그나칩 반도체 유한회사 |
단결정 실리콘 성장 방식을 이용한 씨모스 이미지센서제조 방법
|
US20060157806A1
(en)
*
|
2005-01-18 |
2006-07-20 |
Omnivision Technologies, Inc. |
Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
|
KR100736525B1
(ko)
*
|
2005-04-26 |
2007-07-06 |
매그나칩 반도체 유한회사 |
씨모스 이미지 센서의 제조 방법
|
EP1894223A2
(en)
*
|
2005-06-10 |
2008-03-05 |
Amplification Technologies, INC. |
High sensitivity, high resolution detector devices and arrays
|
KR100625944B1
(ko)
*
|
2005-06-30 |
2006-09-18 |
매그나칩 반도체 유한회사 |
씨모스 이미지 센서의 포토다이오드 및 그의 제조 방법
|
KR100746222B1
(ko)
*
|
2005-07-11 |
2007-08-03 |
삼성전자주식회사 |
이미지 센서의 제조방법들
|
US8274715B2
(en)
|
2005-07-28 |
2012-09-25 |
Omnivision Technologies, Inc. |
Processing color and panchromatic pixels
|
US8139130B2
(en)
|
2005-07-28 |
2012-03-20 |
Omnivision Technologies, Inc. |
Image sensor with improved light sensitivity
|
KR100749268B1
(ko)
*
|
2005-11-30 |
2007-08-13 |
매그나칩 반도체 유한회사 |
이미지 센서 및 그 제조방법
|
KR100790228B1
(ko)
*
|
2005-12-26 |
2008-01-02 |
매그나칩 반도체 유한회사 |
시모스 이미지 센서
|
KR100718773B1
(ko)
*
|
2005-12-29 |
2007-05-16 |
매그나칩 반도체 유한회사 |
이미지 센서 및 그 제조방법
|
US7566875B2
(en)
*
|
2006-04-13 |
2009-07-28 |
Integrated Micro Sensors Inc. |
Single-chip monolithic dual-band visible- or solar-blind photodetector
|
US20080012087A1
(en)
*
|
2006-04-19 |
2008-01-17 |
Henri Dautet |
Bonded wafer avalanche photodiode and method for manufacturing same
|
ATE500621T1
(de)
|
2006-04-25 |
2011-03-15 |
Koninkl Philips Electronics Nv |
Implementierung von lawinenfotodioden in (bi) cmos-verfahren
|
US7737357B2
(en)
*
|
2006-05-04 |
2010-06-15 |
Sunpower Corporation |
Solar cell having doped semiconductor heterojunction contacts
|
US7916362B2
(en)
|
2006-05-22 |
2011-03-29 |
Eastman Kodak Company |
Image sensor with improved light sensitivity
|
CN101484999B
(zh)
|
2006-07-03 |
2011-09-14 |
浜松光子学株式会社 |
光电二极管阵列
|
US8188563B2
(en)
*
|
2006-07-21 |
2012-05-29 |
The Regents Of The University Of California |
Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector
|
JP2008066402A
(ja)
*
|
2006-09-05 |
2008-03-21 |
Fujifilm Corp |
撮像素子および撮像装置
|
US8031258B2
(en)
|
2006-10-04 |
2011-10-04 |
Omnivision Technologies, Inc. |
Providing multiple video signals from single sensor
|
US8456410B2
(en)
*
|
2006-12-12 |
2013-06-04 |
Intersil Americas Inc. |
Backlight control using light sensors with infrared suppression
|
WO2008073783A2
(en)
*
|
2006-12-12 |
2008-06-19 |
Intersil Americas Inc. |
Light sensors with infrared suppression and use of the sensors for backlight control
|
US8138583B2
(en)
|
2007-02-16 |
2012-03-20 |
Cree, Inc. |
Diode having reduced on-resistance and associated method of manufacture
|
US7482282B2
(en)
*
|
2007-03-26 |
2009-01-27 |
International Business Machines Corporation |
Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies
|
WO2008133016A1
(ja)
*
|
2007-04-13 |
2008-11-06 |
Sharp Kabushiki Kaisha |
光センサ及び表示装置
|
KR100863497B1
(ko)
*
|
2007-06-19 |
2008-10-14 |
마루엘에스아이 주식회사 |
이미지 감지 장치, 이미지 신호 처리 방법, 광 감지 소자, 제어 방법 및 화소 어레이
|
US20090159799A1
(en)
*
|
2007-12-19 |
2009-06-25 |
Spectral Instruments, Inc. |
Color infrared light sensor, camera, and method for capturing images
|
US8232585B2
(en)
|
2008-07-24 |
2012-07-31 |
Micron Technology, Inc. |
JFET devices with PIN gate stacks
|
US8877616B2
(en)
|
2008-09-08 |
2014-11-04 |
Luxtera, Inc. |
Method and system for monolithic integration of photonics and electronics in CMOS processes
|
US8211732B2
(en)
|
2008-09-11 |
2012-07-03 |
Omnivision Technologies, Inc. |
Image sensor with raised photosensitive elements
|
JP5543578B2
(ja)
*
|
2009-03-23 |
2014-07-09 |
本田技研工業株式会社 |
原子層堆積法により製造された量子閉じ込め型太陽電池
|
US8952354B2
(en)
*
|
2009-04-15 |
2015-02-10 |
Sol Voltaics Ab |
Multi-junction photovoltaic cell with nanowires
|
US8436288B2
(en)
*
|
2009-04-24 |
2013-05-07 |
Quantum Semiconductor Llc |
Image sensors with photo-current mode and solar cell operation
|
US8587083B2
(en)
|
2009-06-17 |
2013-11-19 |
Gunnar Malm |
Microbolometer semiconductor material
|
WO2010151888A1
(en)
*
|
2009-06-26 |
2010-12-29 |
Amplification Technologies, Inc. |
Low-level signal detection by semiconductor avalanche amplification
|
JP5387212B2
(ja)
*
|
2009-07-31 |
2014-01-15 |
富士通セミコンダクター株式会社 |
半導体装置及びその製造方法
|
KR101605424B1
(ko)
|
2010-03-19 |
2016-03-22 |
인비사지 테크놀로지스, 인크. |
감지성 반도체 다이오드를 채용한 이미지 센서
|
JP5299333B2
(ja)
*
|
2010-03-23 |
2013-09-25 |
ソニー株式会社 |
固体撮像素子
|
WO2011156507A1
(en)
|
2010-06-08 |
2011-12-15 |
Edward Hartley Sargent |
Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
|
GB201014843D0
(en)
|
2010-09-08 |
2010-10-20 |
Univ Edinburgh |
Single photon avalanche diode for CMOS circuits
|
JP5745866B2
(ja)
*
|
2011-01-14 |
2015-07-08 |
東芝情報システム株式会社 |
固体撮像素子
|
JP2012156310A
(ja)
*
|
2011-01-26 |
2012-08-16 |
Sony Corp |
固体撮像素子、固体撮像素子の製造方法、および電子機器
|
US8698084B2
(en)
*
|
2011-03-10 |
2014-04-15 |
Sionyx, Inc. |
Three dimensional sensors, systems, and associated methods
|
JP2012231026A
(ja)
*
|
2011-04-26 |
2012-11-22 |
Toshiba Corp |
固体撮像装置
|
US8399949B2
(en)
|
2011-06-30 |
2013-03-19 |
Micron Technology, Inc. |
Photonic systems and methods of forming photonic systems
|
US8368159B2
(en)
|
2011-07-08 |
2013-02-05 |
Excelitas Canada, Inc. |
Photon counting UV-APD
|
US9355910B2
(en)
|
2011-12-13 |
2016-05-31 |
GlobalFoundries, Inc. |
Semiconductor device with transistor local interconnects
|
US8581348B2
(en)
*
|
2011-12-13 |
2013-11-12 |
GlobalFoundries, Inc. |
Semiconductor device with transistor local interconnects
|
DE102012214690B4
(de)
|
2012-08-17 |
2015-12-17 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Hybrider Detektor zum Detektieren elektromagnetischer Strahlung und Verfahren zu seiner Herstellung
|
SG2013075379A
(en)
|
2012-10-08 |
2014-05-29 |
Agency Science Tech & Res |
P-i-n photodiode
|
US9887309B2
(en)
|
2012-12-13 |
2018-02-06 |
The Board of Regents of the University of Okalahoma |
Photovoltaic lead-salt semiconductor detectors
|
US10109754B2
(en)
*
|
2012-12-13 |
2018-10-23 |
The Board Of Regents Of The University Of Oklahoma |
Photovoltaic lead-salt detectors
|
CN103199100B
(zh)
*
|
2013-04-13 |
2015-12-09 |
湘潭大学 |
一种单芯片集成用硅基复合增强型光电探测器的制作方法
|
CN105324856B
(zh)
*
|
2013-06-20 |
2017-11-28 |
俄克拉荷马大学董事会 |
光伏铅盐检测器
|
US9941316B2
(en)
|
2014-06-10 |
2018-04-10 |
Invisage Technologies, Inc. |
Multi-terminal optoelectronic devices for light detection
|
JP6437284B2
(ja)
*
|
2014-11-20 |
2018-12-12 |
国立大学法人 東京大学 |
アバランシェ受光器
|
KR101849693B1
(ko)
*
|
2014-11-24 |
2018-04-16 |
아티룩스 인코포레이티드 |
동일한 기판 상에 트랜지스터와 광 검출기를 제조하기 위한 모놀리식 집적 기술
|
US20160255323A1
(en)
|
2015-02-26 |
2016-09-01 |
Dual Aperture International Co. Ltd. |
Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling
|
MY174333A
(en)
*
|
2015-10-14 |
2020-04-08 |
Hoon Kim |
Image sensor with solar cell function
|
CN107293559A
(zh)
*
|
2016-04-05 |
2017-10-24 |
格科微电子(上海)有限公司 |
Rgbir图像传感器
|
CN107346774A
(zh)
*
|
2016-05-05 |
2017-11-14 |
上海芯晨科技有限公司 |
一种单片集成的紫外焦平面器件及其制备方法
|
WO2019143315A1
(en)
|
2018-01-16 |
2019-07-25 |
Ows Agri Limited |
Gas concentration measurement apparatus and techniques
|
US11353395B2
(en)
*
|
2018-01-23 |
2022-06-07 |
Ows Agri Limited |
System and method for ozone concentration measurement in liquids having a negative scaling index
|
US11366088B2
(en)
|
2018-01-23 |
2022-06-21 |
Ows Agri Limited |
System and method for ozone concentration measurement in ice
|
WO2019147234A1
(en)
|
2018-01-24 |
2019-08-01 |
Ows Agri Limited |
System and method for ozone concentration in liquids having a positive scaling factor
|
WO2019151976A1
(en)
|
2018-01-30 |
2019-08-08 |
Ows Agri Limited |
Systems and methods for bulk sterilization using ozone
|
US11712052B2
(en)
|
2018-02-09 |
2023-08-01 |
Ows Agri Limited |
Systems and methods for continuous flow sterilization
|
CN110931578B
(zh)
*
|
2018-09-20 |
2024-05-28 |
台湾积体电路制造股份有限公司 |
光电探测器及其形成方法
|
JP7172389B2
(ja)
*
|
2018-09-28 |
2022-11-16 |
株式会社ニコン |
撮像素子、撮像装置、及び、撮像素子の製造方法
|
US10818755B2
(en)
|
2018-11-16 |
2020-10-27 |
Atomera Incorporated |
Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
|
US10854717B2
(en)
|
2018-11-16 |
2020-12-01 |
Atomera Incorporated |
Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
|
US10840336B2
(en)
|
2018-11-16 |
2020-11-17 |
Atomera Incorporated |
Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
|
US10840337B2
(en)
|
2018-11-16 |
2020-11-17 |
Atomera Incorporated |
Method for making a FINFET having reduced contact resistance
|
US10847618B2
(en)
*
|
2018-11-16 |
2020-11-24 |
Atomera Incorporated |
Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
|
US10840335B2
(en)
*
|
2018-11-16 |
2020-11-17 |
Atomera Incorporated |
Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
|
CN109509808B
(zh)
*
|
2018-11-21 |
2020-01-14 |
温州大学 |
一种SiC/Si异质结侧向型光敏IMPATT二极管及其制备方法
|
CN112447775A
(zh)
*
|
2019-08-28 |
2021-03-05 |
天津大学青岛海洋技术研究院 |
一种提高量子效率的cmos图像传感器像素制作方法
|
JP2021118551A
(ja)
*
|
2020-01-22 |
2021-08-10 |
ソニーセミコンダクタソリューションズ株式会社 |
撮像装置、センサ装置及び電子機器
|
CN113764443B
(zh)
|
2020-06-05 |
2024-01-02 |
联华电子股份有限公司 |
感光元件
|
CN112510058A
(zh)
*
|
2020-12-16 |
2021-03-16 |
中山大学 |
一种集成光电传感器及其制备方法
|
US11482562B2
(en)
|
2020-12-30 |
2022-10-25 |
Applied Materials, Inc. |
Methods for forming image sensors
|