JP2004507095A - 発光半導体チップ - Google Patents

発光半導体チップ Download PDF

Info

Publication number
JP2004507095A
JP2004507095A JP2002520316A JP2002520316A JP2004507095A JP 2004507095 A JP2004507095 A JP 2004507095A JP 2002520316 A JP2002520316 A JP 2002520316A JP 2002520316 A JP2002520316 A JP 2002520316A JP 2004507095 A JP2004507095 A JP 2004507095A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor chip
chip according
active layer
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002520316A
Other languages
English (en)
Japanese (ja)
Inventor
ヨハネス　バウル
ドミニク　アイゼルト
ミヒャエル　フェーラー
ベルトルト　ハーン
フォルカー　ヘールレ
ウルリッヒ　ヤコブ
ヴェルナー　プラス
ウーヴェ　シュトラウス
ヨハネス　フェルクル
ウルリッヒ　ツェーンダー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2004507095A publication Critical patent/JP2004507095A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2002520316A 2000-08-11 2001-07-24 発光半導体チップ Pending JP2004507095A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik
PCT/DE2001/002801 WO2002015287A1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006337515A Division JP2007073998A (ja) 2000-08-11 2006-12-14 発光半導体チップ

Publications (1)

Publication Number Publication Date
JP2004507095A true JP2004507095A (ja) 2004-03-04

Family

ID=7652222

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002520316A Pending JP2004507095A (ja) 2000-08-11 2001-07-24 発光半導体チップ
JP2006337515A Withdrawn JP2007073998A (ja) 2000-08-11 2006-12-14 発光半導体チップ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006337515A Withdrawn JP2007073998A (ja) 2000-08-11 2006-12-14 発光半導体チップ

Country Status (7)

Country Link
US (1) US6891199B2 (enExample)
EP (1) EP1307927B1 (enExample)
JP (2) JP2004507095A (enExample)
CN (2) CN100541841C (enExample)
DE (2) DE10039433B4 (enExample)
TW (1) TW502464B (enExample)
WO (1) WO2002015287A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294957A (ja) * 2006-04-21 2007-11-08 Samsung Electro Mech Co Ltd 発光ダイオードチップ
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
JP2008042160A (ja) * 2006-08-09 2008-02-21 Yiguang Electronic Ind Co Ltd 側面出射型発光ダイオードの封止構造
JP2010529658A (ja) * 2007-05-30 2010-08-26 バーティクル，インク 発光ダイオードおよびその製造方法
JP2010287583A (ja) * 2009-06-09 2010-12-24 Toyoda Gosei Co Ltd Ｌｅｄランプ
JP2016525288A (ja) * 2013-07-26 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 内部高屈折率ピラーを有するｌｅｄドーム
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
JP4294295B2 (ja) 2002-11-06 2009-07-08 株式会社小糸製作所 車両用前照灯
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
ITTO20030610A1 (it) * 2003-08-05 2005-02-06 Fiat Ricerche Disposizione di illuminamento a profondita' ridotta per
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
GB2417126A (en) * 2004-08-09 2006-02-15 Qinetiq Ltd Method for fabricating lateral semiconductor device
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
JP2007201361A (ja) * 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
WO2009048076A1 (ja) * 2007-10-09 2009-04-16 Alps Electric Co., Ltd. 半導体発光装置
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN101692475A (zh) * 2009-10-26 2010-04-07 无锡瑞威光电科技有限公司 非正方形led芯片的组合式封装方法
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576586A (en) * 1968-08-05 1971-04-27 Bell & Howell Co Variable area injection luminescent device
JPS5113621B2 (enExample) * 1972-08-10 1976-05-01
JPS552751B2 (enExample) 1972-08-16 1980-01-22
JPS4990494A (enExample) 1972-12-28 1974-08-29
FR2378324A1 (fr) * 1977-01-20 1978-08-18 Radiotechnique Compelec Perfectionnement a la realisation de dispositifs d'affichage
DE2813930A1 (de) * 1978-03-31 1979-10-04 Agfa Gevaert Ag Lumineszenzdiode
JPS594088A (ja) 1982-06-30 1984-01-10 Toshiba Corp 発光ダイオ−ド
JPS6293985A (ja) 1985-10-21 1987-04-30 Masayoshi Umeno 高速応答性可視光発光ダイオ−ド
JPH0531957A (ja) * 1991-05-23 1993-02-09 Canon Inc 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JPH05226781A (ja) 1992-02-12 1993-09-03 Fujitsu Ltd 半導体発光素子の製造方法
JPH05327012A (ja) 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JPH06224469A (ja) 1993-01-26 1994-08-12 Kyocera Corp 半導体発光装置
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3326545B2 (ja) * 1994-09-30 2002-09-24 ローム株式会社 半導体発光素子
JPH08139366A (ja) * 1994-11-11 1996-05-31 Ricoh Co Ltd 発光素子およびアレイ状光源並びにその製造方法および光信号送信装置
JP3153727B2 (ja) * 1995-04-11 2001-04-09 株式会社リコー スーパールミネッセントダイオード
ID16181A (id) * 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
JP3504079B2 (ja) * 1996-08-31 2004-03-08 株式会社東芝 半導体発光ダイオード素子の製造方法
JPH10150223A (ja) * 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
JPH10326910A (ja) 1997-05-19 1998-12-08 Song-Jae Lee 発光ダイオードとこれを適用した発光ダイオードアレイランプ
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3707279B2 (ja) * 1998-03-02 2005-10-19 松下電器産業株式会社 半導体発光装置
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
JP2002359437A (ja) * 2001-03-29 2002-12-13 Toshiba Electronic Engineering Corp 光半導体素子および光半導体素子の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294957A (ja) * 2006-04-21 2007-11-08 Samsung Electro Mech Co Ltd 発光ダイオードチップ
JP2011049587A (ja) * 2006-04-21 2011-03-10 Samsung Led Co Ltd 発光ダイオードチップ
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
JP2008042160A (ja) * 2006-08-09 2008-02-21 Yiguang Electronic Ind Co Ltd 側面出射型発光ダイオードの封止構造
JP2010529658A (ja) * 2007-05-30 2010-08-26 バーティクル，インク 発光ダイオードおよびその製造方法
JP2010287583A (ja) * 2009-06-09 2010-12-24 Toyoda Gosei Co Ltd Ｌｅｄランプ
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED
JP2016525288A (ja) * 2013-07-26 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 内部高屈折率ピラーを有するｌｅｄドーム

Also Published As

Publication number Publication date
CN100541841C (zh) 2009-09-16
DE10039433A1 (de) 2002-02-28
TW502464B (en) 2002-09-11
US6891199B2 (en) 2005-05-10
DE10039433B4 (de) 2017-10-26
US20040056263A1 (en) 2004-03-25
CN1913184A (zh) 2007-02-14
EP1307927B1 (de) 2010-09-22
WO2002015287A1 (de) 2002-02-21
JP2007073998A (ja) 2007-03-22
CN1276522C (zh) 2006-09-20
DE50115638D1 (de) 2010-11-04
EP1307927A1 (de) 2003-05-07
CN1446380A (zh) 2003-10-01

Similar Documents

Publication Publication Date Title
JP2004507095A (ja) 発光半導体チップ
JP5283811B2 (ja) 放射線を発する半導体デバイス、その製造方法及び放射線を発する光学素子
JP4123830B2 (ja) Ｌｅｄチップ
US20220216668A1 (en) Light emitting device
TW541712B (en) Chip for the opto-electronics
JP2003086838A (ja) 発光素子
US20180182925A1 (en) Light-emitting diode
US20110215290A1 (en) Anti-reflected high efficiency light emitting diode device
US10340417B2 (en) Semiconductor device, semiconductor device package, and lighting system comprising same
US10907773B2 (en) Wavelength conversion device and light source device
JP2016058689A (ja) 半導体発光装置
NL8603283A (nl) Licht emitterende halfgeleiderinrichting met vertikale lichtemissie.
CN101128942B (zh) Led阵列
JP2006313907A (ja) 放熱構造体及びこれを具備した発光素子組立体
US9577167B2 (en) Semiconductor light emitting device
JP2017085016A (ja) 面発光レーザ素子
JP4352686B2 (ja) 反射型発光装置
JPH10190069A (ja) 半導体発光素子
KR102320866B1 (ko) 발광 소자 및 발광 소자 패키지
KR102348950B1 (ko) 반도체 발광소자
US20060093284A1 (en) Semiconductor laser diode
JPH0511470U (ja) 半導体レーザ用ヒートシンク
JPH1022570A (ja) 窒化物半導体レーザ素子
US20250056945A1 (en) Light-emitting device and light-emitting module
JP7695828B2 (ja) 発光装置

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060615

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060912

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070711

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071011

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071018

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080410