TW502464B - Radiation-emitting semiconductor-chip and luminescent diode - Google Patents

Radiation-emitting semiconductor-chip and luminescent diode Download PDF

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Publication number
TW502464B
TW502464B TW090119655A TW90119655A TW502464B TW 502464 B TW502464 B TW 502464B TW 090119655 A TW090119655 A TW 090119655A TW 90119655 A TW90119655 A TW 90119655A TW 502464 B TW502464 B TW 502464B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
substrate
active layer
patent application
scope
Prior art date
Application number
TW090119655A
Other languages
English (en)
Chinese (zh)
Inventor
Johannes Baur
Dominik Eisert
Michael Fehrer
Berthold Hahn
Volker Haerle
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Application granted granted Critical
Publication of TW502464B publication Critical patent/TW502464B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW090119655A 2000-08-11 2001-08-10 Radiation-emitting semiconductor-chip and luminescent diode TW502464B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik

Publications (1)

Publication Number Publication Date
TW502464B true TW502464B (en) 2002-09-11

Family

ID=7652222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119655A TW502464B (en) 2000-08-11 2001-08-10 Radiation-emitting semiconductor-chip and luminescent diode

Country Status (7)

Country Link
US (1) US6891199B2 (enExample)
EP (1) EP1307927B1 (enExample)
JP (2) JP2004507095A (enExample)
CN (2) CN100541841C (enExample)
DE (2) DE10039433B4 (enExample)
TW (1) TW502464B (enExample)
WO (1) WO2002015287A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397228B (zh) * 2004-08-09 2013-05-21 Qinetiq Ltd 製造側面半導體元件的方法

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DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
JP4294295B2 (ja) 2002-11-06 2009-07-08 株式会社小糸製作所 車両用前照灯
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
ITTO20030610A1 (it) * 2003-08-05 2005-02-06 Fiat Ricerche Disposizione di illuminamento a profondita' ridotta per
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2007201361A (ja) * 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR100735311B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 발광 다이오드 칩
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
TW200810148A (en) * 2006-08-09 2008-02-16 Everlight Electronics Co Ltd Side-emitting diode package
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
WO2009048076A1 (ja) * 2007-10-09 2009-04-16 Alps Electric Co., Ltd. 半導体発光装置
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5182231B2 (ja) * 2009-06-09 2013-04-17 豊田合成株式会社 Ｌｅｄランプ
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN101692475A (zh) * 2009-10-26 2010-04-07 无锡瑞威光电科技有限公司 非正方形led芯片的组合式封装方法
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
JP6574768B2 (ja) * 2013-07-26 2019-09-11 ルミレッズ ホールディング ベーフェー 内部高屈折率ピラーを有するｌｅｄドーム

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397228B (zh) * 2004-08-09 2013-05-21 Qinetiq Ltd 製造側面半導體元件的方法

Also Published As

Publication number Publication date
US20040056263A1 (en) 2004-03-25
CN1913184A (zh) 2007-02-14
US6891199B2 (en) 2005-05-10
CN1276522C (zh) 2006-09-20
CN100541841C (zh) 2009-09-16
DE10039433A1 (de) 2002-02-28
WO2002015287A1 (de) 2002-02-21
EP1307927B1 (de) 2010-09-22
DE50115638D1 (de) 2010-11-04
JP2004507095A (ja) 2004-03-04
EP1307927A1 (de) 2003-05-07
CN1446380A (zh) 2003-10-01
DE10039433B4 (de) 2017-10-26
JP2007073998A (ja) 2007-03-22

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