CN100541841C - 产生辐射的半导体芯片和发光二极管 - Google Patents

产生辐射的半导体芯片和发光二极管 Download PDF

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Publication number
CN100541841C
CN100541841C CNB2006101059281A CN200610105928A CN100541841C CN 100541841 C CN100541841 C CN 100541841C CN B2006101059281 A CNB2006101059281 A CN B2006101059281A CN 200610105928 A CN200610105928 A CN 200610105928A CN 100541841 C CN100541841 C CN 100541841C
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CN
China
Prior art keywords
semiconductor chip
active layer
substrate
described semiconductor
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2006101059281A
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English (en)
Chinese (zh)
Other versions
CN1913184A (zh
Inventor
J·保尔
D·埃泽尔特
M·费雷尔
B·哈恩
V·海勒
U·雅各布
W·普拉斯
U·斯特劳斯
J·维尔克尔
U·策恩德尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of CN1913184A publication Critical patent/CN1913184A/zh
Application granted granted Critical
Publication of CN100541841C publication Critical patent/CN100541841C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CNB2006101059281A 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管 Expired - Lifetime CN100541841C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik
DE10039433.7 2000-08-11

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB01814019XA Division CN1276522C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Publications (2)

Publication Number Publication Date
CN1913184A CN1913184A (zh) 2007-02-14
CN100541841C true CN100541841C (zh) 2009-09-16

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ID=7652222

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2006101059281A Expired - Lifetime CN100541841C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管
CNB01814019XA Expired - Lifetime CN1276522C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB01814019XA Expired - Lifetime CN1276522C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Country Status (7)

Country Link
US (1) US6891199B2 (enExample)
EP (1) EP1307927B1 (enExample)
JP (2) JP2004507095A (enExample)
CN (2) CN100541841C (enExample)
DE (2) DE10039433B4 (enExample)
TW (1) TW502464B (enExample)
WO (1) WO2002015287A1 (enExample)

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US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
ITTO20030610A1 (it) * 2003-08-05 2005-02-06 Fiat Ricerche Disposizione di illuminamento a profondita' ridotta per
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
GB2417126A (en) * 2004-08-09 2006-02-15 Qinetiq Ltd Method for fabricating lateral semiconductor device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
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KR100735311B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 발광 다이오드 칩
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
TW200810148A (en) * 2006-08-09 2008-02-16 Everlight Electronics Co Ltd Side-emitting diode package
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WO2009048076A1 (ja) * 2007-10-09 2009-04-16 Alps Electric Co., Ltd. 半導体発光装置
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5182231B2 (ja) * 2009-06-09 2013-04-17 豊田合成株式会社 Ｌｅｄランプ
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN101692475A (zh) * 2009-10-26 2010-04-07 无锡瑞威光电科技有限公司 非正方形led芯片的组合式封装方法
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN105393372B (zh) * 2013-07-26 2018-06-15 亮锐控股有限公司 具有内部高折射率柱的led圆顶

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Also Published As

Publication number Publication date
DE10039433A1 (de) 2002-02-28
TW502464B (en) 2002-09-11
US6891199B2 (en) 2005-05-10
DE10039433B4 (de) 2017-10-26
US20040056263A1 (en) 2004-03-25
CN1913184A (zh) 2007-02-14
EP1307927B1 (de) 2010-09-22
WO2002015287A1 (de) 2002-02-21
JP2007073998A (ja) 2007-03-22
CN1276522C (zh) 2006-09-20
JP2004507095A (ja) 2004-03-04
DE50115638D1 (de) 2010-11-04
EP1307927A1 (de) 2003-05-07
CN1446380A (zh) 2003-10-01

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Granted publication date: 20090916