CN101976715B - 倒梯形铝镓铟磷系发光二极管的制作工艺 - Google Patents
倒梯形铝镓铟磷系发光二极管的制作工艺 Download PDFInfo
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- CN101976715B CN101976715B CN2010102984295A CN201010298429A CN101976715B CN 101976715 B CN101976715 B CN 101976715B CN 2010102984295 A CN2010102984295 A CN 2010102984295A CN 201010298429 A CN201010298429 A CN 201010298429A CN 101976715 B CN101976715 B CN 101976715B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 230000007704 transition Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 235000005976 Citrus sinensis Nutrition 0.000 description 1
- 240000002319 Citrus sinensis Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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CN2010102984295A CN101976715B (zh) | 2010-10-05 | 2010-10-05 | 倒梯形铝镓铟磷系发光二极管的制作工艺 |
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CN2010102984295A CN101976715B (zh) | 2010-10-05 | 2010-10-05 | 倒梯形铝镓铟磷系发光二极管的制作工艺 |
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CN101976715A CN101976715A (zh) | 2011-02-16 |
CN101976715B true CN101976715B (zh) | 2011-10-05 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106129192A (zh) * | 2016-07-19 | 2016-11-16 | 厦门乾照光电股份有限公司 | 一种等腰梯形式发光二极管的制备工艺 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738313B (zh) * | 2011-04-01 | 2015-03-18 | 山东华光光电子有限公司 | 一种提高led芯片出光的芯片切割方法 |
CN102751395B (zh) * | 2011-04-19 | 2016-08-17 | 广东银雨芯片半导体有限公司 | 一种高压交流led晶片模块制作方法 |
CN102629651A (zh) * | 2012-04-25 | 2012-08-08 | 华灿光电股份有限公司 | 一种倒金字塔形发光二极管的制备方法 |
CN105280781B (zh) * | 2015-10-30 | 2018-08-31 | 广东晶科电子股份有限公司 | 一种倒装白光led器件及其制作方法 |
CN111063650A (zh) * | 2019-12-17 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | 发光二极管的转移方法及转移装置 |
CN113035765B (zh) * | 2021-02-22 | 2024-06-25 | 京东方科技集团股份有限公司 | 芯片转移方法及装置、显示基板及显示装置 |
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DE10039433B4 (de) * | 2000-08-11 | 2017-10-26 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
TW521446B (en) * | 2002-02-06 | 2003-02-21 | Epistar Corp | Manufacturing method of LED having tilted surface |
US7951625B2 (en) * | 2007-02-21 | 2011-05-31 | Panasonic Corporation | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
CN100595478C (zh) * | 2008-08-07 | 2010-03-24 | 上海亚明灯泡厂有限公司 | 发光装置及其所用的透镜 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106129192A (zh) * | 2016-07-19 | 2016-11-16 | 厦门乾照光电股份有限公司 | 一种等腰梯形式发光二极管的制备工艺 |
CN106129192B (zh) * | 2016-07-19 | 2018-05-22 | 厦门乾照光电股份有限公司 | 一种等腰梯形式发光二极管的制备工艺 |
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Owner name: ANHUI SAN AN OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: XIAMEN SAN AN PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20120105 |
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Effective date of registration: 20120105 Address after: 241000 Anhui city of Wuhu Province Economic and Technological Development Zone Dong Liang Road No. 8 Patentee after: Anhui San'an Optoelectronics Co., Ltd. Address before: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee before: Xiamen San'an Photoelectric Technology Co., Ltd. |