521446 五、發明說明（1) 本發明係關於一種發光二極體及其製法，尤其關於一 種具有斜面之發光二極體之製法。 發光二極體之應用頗為廣泛，例如，可應用於光學顯 示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝 置、以及醫療裝置。 發光二極體發出之光為射向各個方向，非單一對焦於 某處之光束。而若以透明之基板取代不透明之基板，使得 射向基板方向之光可以穿透基板而不被吸收，更可提高其 出光效率。但是在實際上，由發光二極體產生的光線並不 是那麼容易由發光二極體中射出，由Sne 1 1定律之關係已 知，光只有在臨界角（9 c = s i η - 1 ( np/ns )内可以完全被射 出，其他的光則會被反射而可能被吸收。而發光二極體所 發出之光係由高折射率之材料進入折射率低之介質中，此 過程會因受到折射率之影響而使得出光之角度大受限制。 即由二極體射出之光之角度需在20c之圓錐形内才可以完 全射出，超過此角度之光則會被反射。 美國專利第6，2 2 9，1 6 0號揭露一種發光二極體結構， 該結構可以大大提高發光二極體之出光效率，其中該發光 二極體之側面具有與發光面之正向形成一角度之斜面，該 斜面形成之方法為利用一具有V型刀口之切割刀來形成該 斜面；另一種方法是利用濕式或乾式蝕刻來形成該斜面。 此先前技藝方法之缺點為不適用於所有待切割或蝕刻之材 質，例如利用V型刀口之切割刀無法切割藍寶石形成斜 面；另外藍寶石也無法利用蝕刻來形成斜面。521446 V. Description of the invention (1) The present invention relates to a light-emitting diode and a method for manufacturing the same, and more particularly to a method for manufacturing a light-emitting diode with a bevel. The applications of light-emitting diodes are quite wide, for example, they can be applied to optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. The light emitted by the light emitting diode is a light beam that is directed in all directions and is not a single focus at a certain place. If a transparent substrate is used instead of an opaque substrate, the light emitted in the direction of the substrate can pass through the substrate without being absorbed, and the light output efficiency can be improved. But in reality, the light generated by the light-emitting diode is not so easy to be emitted from the light-emitting diode. According to the relationship of Sne 1 1 law, light is only at the critical angle (9 c = si η-1 (np / ns) can be completely emitted, and other light may be reflected and may be absorbed. The light emitted by the light-emitting diode is from a material with a high refractive index into a medium with a low refractive index, and this process will be refracted due to The angle of light emitted is greatly limited by the effect of the rate. That is, the angle of the light emitted by the diode must be within the cone of 20c before it can be completely emitted, and the light exceeding this angle will be reflected. US Patent No. 6, 2 2 No. 9,160 discloses a light-emitting diode structure, which can greatly improve the light-emitting efficiency of the light-emitting diode. The side surface of the light-emitting diode has an inclined surface that forms an angle with the forward direction of the light-emitting surface. The inclined surface The method of forming is to use a cutting blade with a V-shaped blade to form the bevel; another method is to use wet or dry etching to form the bevel. The disadvantage of this prior art method is that it is not applicable to all to be cut Or etched materials, for example, a V-blade cutter cannot cut sapphire to form a bevel; in addition, sapphire cannot be etched to form a bevel.
11 11 1 111 1 iiliiBKI 11 11 1 mmrn II 521446 五、發明說明（2) 本案卷明人於思考如何解決前述之 明靈咸，切、A # -i A ' 6时’獲付一發 α W為右糟使用一雷射切割方法 割，即可解决前述之V型切割刀切割 貝石進订切 所有待切割或敍刻之材質的問題。…虫刻方法不適用於 發明概要 本發明之 體之製法，其 徑由寬漸窄， 側面形成一具 法無法適用於 切割如藍寶石 依本發明一較 包含下列步驟 形成一發光疊 割該藍寶石基 面，以提高發 發光二極 射光束直 之晶粒之 前技藝方 因而能夠 體之製法 石基板上 批次切 度之斜 在於提供一種具有斜面之 批射：割…改變雷 9進仃切割，使得切割後 :階梯狀之斜面”匕製法無前述先 :: 斤有待切割或餘刻之材質問題， 寺較堅硬之材質。 佳實施例一種具有斜面之發光二極 幵少成 宜層構造，包含在一藍寶 調整雷射光束直徑，由寬漸1窄 反使其側面形成一階梯狀具有角 光二極體之出光效率。 詳細說明 之發：ίΓ二；法：々：較佳實施例-種具有斜面 向人力一誌宙π t法 下列步驟··形成一疊層構造1， 一 i極12 I ί二^板1〇上形成一發光疊層11 ;分別形成第 ° =電極1 3 ;調整雷射光束直徑，由寬漸窄， 批:人切割吻石基板1〇，使其側面形成一階梯狀具有角 521446 五、發明說明（3) 度之斜面，以提高發光二極體之出光效率。 請參閱圖3，依本發明另一較佳實施例一種具有斜面 之务光^一極體之製法包含下列步驟·形成一疊層構造2， 包含在一藍寶石基板20上形成一發光疊層21 ;分別形成第 一電極22及第二電極23;調整雷射光束直徑，由寬漸窄批 次切割該藍寶石基板20及發光疊層21，使得疊層構造2之 側面形成一階梯狀具有角度之斜面，以提高發光二極體之 出光效率。 請參閱圖4，依本發明又一較佳實施例一種具有斜面 之發光二極體之製法包含下列步驟：形成一疊層構造3， 包含在一藍寶石基板30上形成一發光疊層31 ;分別形成第 一電極32及第二電極33 ;調整雷射光束直徑，由寬漸窄， 批次切割該發光疊層31及部分藍寶石基板30，使其側面形 成一階梯狀具有角度之斜面，以提高發光二極體之出光^ 率。 夕又 請參閱圖5，依本發明再一較佳實施例一種具有斜面 之發光一極體之製法包含下列步驟：形成一疊層構造4， 包&在一藍寶石基板40上形成一發光疊層41;分別形成第 一電極42及第二電極43;調整雷射光束直徑，由寬^窄， 批次切割該發光疊層4 1及藍寶石基板4 〇，使其側面开^ 階梯狀具有角度之斜面’以提高發光二極體之出光力文 本技藝中具有一般技術水準者應可瞭解，包含 板、AlGaAs基板、或GaP基板之發光二極體中皆可铲土 本發明之概；^。上述之發光疊層可包含同f11 11 1 111 1 iiliiBKI 11 11 1 mmrn II 521446 V. Description of the invention (2) The person in this case is thinking about how to solve the above-mentioned bright and salty, cut, A # -i A 'at 6 o'clock' was issued a α W Using a laser cutting method to cut the right, you can solve the problem of cutting the shell stone and cutting all the materials to be cut or engraved. … Worm-cutting method is not suitable for the method of invention. The diameter of the body of the invention is gradually narrowed. The method of forming a side is not suitable for cutting such as sapphire. According to the present invention, it includes the following steps to form a light-emitting stack of the sapphire base. Surface, in order to improve the light emitting diodes before the straight beam of crystal grains, so the technology can be made on the method stone substrate batch cut angle is to provide a batch of bevels with a bevel: cut ... change the Ray 9 into the cutting, so that the cutting Back: Step-like bevel "method without the foregoing: :: catties need to be cut or engraved material problems, the temple is a harder material. A good embodiment A light emitting diode with a bevel is less structured into a suitable layer, included in a Sapphire adjusts the diameter of the laser beam, so that its side is formed into a stepped light-emitting diode with corners from wide to narrow. It is described in detail: ίΓ 二; method: 々: preferred embodiment-a kind with bevel The following steps to the human mind and ethical method are to form a laminated structure 1, an i-pole 12 I, and a light-emitting laminate 11 formed on the two plates 10; respectively, the first electrode 13 and the electrode 13 are adjusted. Laser beam diameter, from narrow to wide, batch: A person cuts the kissstone substrate 10 to form a stepped side with an angle of 521446. 5. Description of the invention (3) Degree of slope to improve the light emitting efficiency of the light-emitting diode. Please refer to FIG. 3, according to another preferred embodiment of the present invention, a method for manufacturing a light beam with a bevel ^ a polar body includes the following steps: forming a laminated structure 2, including forming a light emitting stack on a sapphire substrate 20 21; forming the first electrode 22 and the second electrode 23 respectively; adjusting the laser beam diameter, cutting the sapphire substrate 20 and the light-emitting stack 21 from a wide and narrow batch, so that the side of the stack structure 2 forms a stepped angle In order to improve the light emitting efficiency of the light-emitting diode, please refer to FIG. 4. According to another preferred embodiment of the present invention, a method for manufacturing a light-emitting diode with a bevel includes the following steps: forming a laminated structure 3, including A light-emitting stack 31 is formed on a sapphire substrate 30; a first electrode 32 and a second electrode 33 are respectively formed; the laser beam diameter is adjusted, and the light-emitting stack 31 and a part of the sapphire substrate 30 are cut in batches from narrow to wide, so that A stepped inclined surface is formed on the side surface to improve the light emitting rate of the light-emitting diode. Please refer to FIG. 5 again, according to another preferred embodiment of the present invention, a method for manufacturing a light-emitting diode with a bevel includes the following steps: : Forming a laminated structure 4, forming a light emitting stack 41 on a sapphire substrate 40; forming a first electrode 42 and a second electrode 43 respectively; adjusting the laser beam diameter, cutting from wide to narrow, batch cutting The light-emitting laminate 41 and the sapphire substrate 40 have side surfaces ^ stepped angled bevels to improve the light emitting power of light-emitting diodes. Those who have a general technical level in text technology should understand that the board includes an AlGaAs substrate. Or, the light-emitting diodes of the GaP substrate can be used for the invention; ^. The above light-emitting stack may include the same f
第6頁 521446 五、發明說明（4) 結構、雙異質結構、單一子井結構或多重量子井結構。 以上所述者，僅為本發明之一較佳實施例，本發明之 範圍不限於該等較佳實施例，凡依本發明所做的任何變 更，皆屬本發明申請專利之範圍。因此任何熟知此項技藝 者，在不脫離本發明之申請專利範圍及精神下，當可做任 何改變。Page 6 521446 V. Description of the invention (4) Structure, double heterostructure, single sub-well structure or multiple quantum well structure. The above is only one of the preferred embodiments of the present invention, and the scope of the present invention is not limited to these preferred embodiments. Any changes made in accordance with the present invention fall within the scope of the patent application of the present invention. Therefore, any person skilled in the art can make any changes without departing from the scope and spirit of the patent application of the present invention.
521446 圖式簡單說明 圖式之簡單說明： 圖1為一示意圖 具有斜面之發光二極 圖2A為一示意圖 光二極體之程序中， 圖2B為一示意圖 光二極體之程序中， 圖2C為一示意圖 光二極體之程序中， 圖2D為一示意圖 光二極體之程序中， 圖3為·一不意圖^ 種具有斜面之發光二 顯示依本發明一較佳實施例之一種 體。 ，顯示依本發明製法製造圖1所示發 第一次雷射切割後之疊層構造。 ，顯示依本發明製法製造圖1所示發 第二次雷射切割後之疊層構造。 ，顯示依本發明製法製造圖1所示發 第三次雷射切割後之疊層構造。 ，顯示依本發明製法製造圖1所示發 第三次雷射切割後之疊層構造。 顯示依本發明另一較佳實施例之一 極體。 圖4為一示意圖，顯示依本發明又一較佳實施例之一 種具有斜面之發光二極體。 圖5為一示意圖，顯示依本發明再一較佳實施例之一 種具有斜面之發光二極體。 符號說明 I 發光二極體 10 藍寶石基板 II 發光疊層 12 電極521446 Brief description of the diagram Brief description of the diagram: Figure 1 is a schematic diagram of a light-emitting diode with a bevel. Figure 2A is a schematic diagram of a photodiode. Figure 2B is a schematic diagram of a photodiode. In the procedure of a schematic photodiode, FIG. 2D is a procedure of a schematic photodiode, and FIG. 3 is an unintended light emitting diode having a slanted surface showing a body according to a preferred embodiment of the present invention. Shows the laminated structure after the first laser cutting of the hair shown in Fig. 1 according to the manufacturing method of the present invention. Fig. 1 shows the laminated structure after the second laser cutting shown in Fig. 1 according to the manufacturing method of the present invention. , Shows the laminated structure after the third laser cutting shown in FIG. 1 according to the manufacturing method of the present invention. , Shows the laminated structure after the third laser cutting shown in FIG. 1 according to the manufacturing method of the present invention. A polar body according to another preferred embodiment of the present invention is shown. Fig. 4 is a schematic view showing a light emitting diode having a bevel according to another preferred embodiment of the present invention. Fig. 5 is a schematic diagram showing a light-emitting diode with a bevel according to still another preferred embodiment of the present invention. Explanation of symbols I Light-emitting diode 10 Sapphire substrate II Light-emitting stack 12 Electrode
521446 圖式簡單說明 13 第 電 極 2 發 光 二 極 體 20 藍 寶 石 基 板 21 發 光 疊 層 22 第 _丨一 電 極 23 第 二 電 極 3 發 光 二 極 體 30 藍 寶 石 基 板 31 發 光 疊 層 32 第 —一 電 極 33 第 _睡 電 極 4 發 光 二 極 體 40 藍 寶 石 基 板 41 發 光 疊 層 42 第 電 極 43 第 _— 電 極521446 Brief description of the drawings 13 The first electrode 2 The light-emitting diode 20 The sapphire substrate 21 The light-emitting stack 22 The first electrode 23 The second electrode 3 The light-emitting diode 30 The sapphire substrate 31 The light-emitting stack 32 The first—the 33 electrode _ Sleeping electrode 4 Light-emitting diode 40 Sapphire substrate 41 Light-emitting stack 42 No. electrode 43 No. electrode