DE10039433B4 - Halbleiterchip für die Optoelektronik - Google Patents

Halbleiterchip für die Optoelektronik Download PDF

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Publication number
DE10039433B4
DE10039433B4 DE10039433.7A DE10039433A DE10039433B4 DE 10039433 B4 DE10039433 B4 DE 10039433B4 DE 10039433 A DE10039433 A DE 10039433A DE 10039433 B4 DE10039433 B4 DE 10039433B4
Authority
DE
Germany
Prior art keywords
semiconductor chip
sides
active layer
substrate
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10039433.7A
Other languages
German (de)
English (en)
Other versions
DE10039433A1 (de
Inventor
Dr. Strauß Uwe
Dr. Völkl Johannes
Dr. Baur Johannes
Dr. Eisert Dominik
Dr. Fehrer Michael
Dr. Hahn Berthold
Dr. Härle Volker
Dr. Jacob Ulrich
Werner Plass
Dr. Zehnder Ulrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10039433.7A priority Critical patent/DE10039433B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US10/343,851 priority patent/US6891199B2/en
Priority to JP2002520316A priority patent/JP2004507095A/ja
Priority to CNB01814019XA priority patent/CN1276522C/zh
Priority to PCT/DE2001/002801 priority patent/WO2002015287A1/de
Priority to EP01964845A priority patent/EP1307927B1/de
Priority to CNB2006101059281A priority patent/CN100541841C/zh
Priority to DE50115638T priority patent/DE50115638D1/de
Priority to TW090119655A priority patent/TW502464B/zh
Publication of DE10039433A1 publication Critical patent/DE10039433A1/de
Priority to JP2006337515A priority patent/JP2007073998A/ja
Application granted granted Critical
Publication of DE10039433B4 publication Critical patent/DE10039433B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE10039433.7A 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik Expired - Fee Related DE10039433B4 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik
DE50115638T DE50115638D1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode
CNB01814019XA CN1276522C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管
PCT/DE2001/002801 WO2002015287A1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode
EP01964845A EP1307927B1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode
CNB2006101059281A CN100541841C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管
US10/343,851 US6891199B2 (en) 2000-08-11 2001-07-24 Radiation-emitting semiconductor chip and light-emitting diode
JP2002520316A JP2004507095A (ja) 2000-08-11 2001-07-24 発光半導体チップ
TW090119655A TW502464B (en) 2000-08-11 2001-08-10 Radiation-emitting semiconductor-chip and luminescent diode
JP2006337515A JP2007073998A (ja) 2000-08-11 2006-12-14 発光半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik

Publications (2)

Publication Number Publication Date
DE10039433A1 DE10039433A1 (de) 2002-02-28
DE10039433B4 true DE10039433B4 (de) 2017-10-26

Family

ID=7652222

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10039433.7A Expired - Fee Related DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik
DE50115638T Expired - Lifetime DE50115638D1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50115638T Expired - Lifetime DE50115638D1 (de) 2000-08-11 2001-07-24 Strahlungsemittierender halbleiterchip und lumineszenzdiode

Country Status (7)

Country Link
US (1) US6891199B2 (enExample)
EP (1) EP1307927B1 (enExample)
JP (2) JP2004507095A (enExample)
CN (2) CN100541841C (enExample)
DE (2) DE10039433B4 (enExample)
TW (1) TW502464B (enExample)
WO (1) WO2002015287A1 (enExample)

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DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
JP4294295B2 (ja) 2002-11-06 2009-07-08 株式会社小糸製作所 車両用前照灯
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
ITTO20030610A1 (it) * 2003-08-05 2005-02-06 Fiat Ricerche Disposizione di illuminamento a profondita' ridotta per
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
GB2417126A (en) * 2004-08-09 2006-02-15 Qinetiq Ltd Method for fabricating lateral semiconductor device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2007201361A (ja) * 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR100735311B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 발광 다이오드 칩
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
TW200810148A (en) * 2006-08-09 2008-02-16 Everlight Electronics Co Ltd Side-emitting diode package
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
WO2009048076A1 (ja) * 2007-10-09 2009-04-16 Alps Electric Co., Ltd. 半導体発光装置
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5182231B2 (ja) * 2009-06-09 2013-04-17 豊田合成株式会社 Ｌｅｄランプ
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN101692475A (zh) * 2009-10-26 2010-04-07 无锡瑞威光电科技有限公司 非正方形led芯片的组合式封装方法
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
JP6574768B2 (ja) * 2013-07-26 2019-09-11 ルミレッズ ホールディング ベーフェー 内部高屈折率ピラーを有するｌｅｄドーム

Citations (3)

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Publication number Priority date Publication date Assignee Title
DE2340425A1 (de) * 1972-08-10 1974-02-21 Sony Corp Vorrichtung zur alphanumerischen zeichenanzeige
DE2813930A1 (de) * 1978-03-31 1979-10-04 Agfa Gevaert Ag Lumineszenzdiode
US4267486A (en) * 1977-01-20 1981-05-12 U.S. Philips Corporation Device for displaying alphanumerical characters

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US3576586A (en) * 1968-08-05 1971-04-27 Bell & Howell Co Variable area injection luminescent device
JPS552751B2 (enExample) * 1972-08-16 1980-01-22
JPS4990494A (enExample) * 1972-12-28 1974-08-29
JPS594088A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 発光ダイオ−ド
JPS6293985A (ja) * 1985-10-21 1987-04-30 Masayoshi Umeno 高速応答性可視光発光ダイオ−ド
JPH0531957A (ja) * 1991-05-23 1993-02-09 Canon Inc 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JPH05226781A (ja) * 1992-02-12 1993-09-03 Fujitsu Ltd 半導体発光素子の製造方法
JPH05327012A (ja) 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JPH06224469A (ja) * 1993-01-26 1994-08-12 Kyocera Corp 半導体発光装置
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3326545B2 (ja) * 1994-09-30 2002-09-24 ローム株式会社 半導体発光素子
JPH08139366A (ja) * 1994-11-11 1996-05-31 Ricoh Co Ltd 発光素子およびアレイ状光源並びにその製造方法および光信号送信装置
JP3153727B2 (ja) * 1995-04-11 2001-04-09 株式会社リコー スーパールミネッセントダイオード
ID16181A (id) 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
JP3504079B2 (ja) 1996-08-31 2004-03-08 株式会社東芝 半導体発光ダイオード素子の製造方法
JPH10150223A (ja) 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
JPH10326910A (ja) 1997-05-19 1998-12-08 Song-Jae Lee 発光ダイオードとこれを適用した発光ダイオードアレイランプ
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
JP3707279B2 (ja) * 1998-03-02 2005-10-19 松下電器産業株式会社 半導体発光装置
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
JP2002359437A (ja) * 2001-03-29 2002-12-13 Toshiba Electronic Engineering Corp 光半導体素子および光半導体素子の製造方法

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Publication number Priority date Publication date Assignee Title
DE2340425A1 (de) * 1972-08-10 1974-02-21 Sony Corp Vorrichtung zur alphanumerischen zeichenanzeige
US4267486A (en) * 1977-01-20 1981-05-12 U.S. Philips Corporation Device for displaying alphanumerical characters
DE2813930A1 (de) * 1978-03-31 1979-10-04 Agfa Gevaert Ag Lumineszenzdiode

Non-Patent Citations (1)

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Title
DYMENT, J.C.: Hermite-Gaussian Mode Patterns in GaAs Junction Lasers. In: Appl.Phys.Lett., Vol. 10, No. 3 (1967), S. 84-86 *

Also Published As

Publication number Publication date
US20040056263A1 (en) 2004-03-25
CN1913184A (zh) 2007-02-14
US6891199B2 (en) 2005-05-10
CN1276522C (zh) 2006-09-20
CN100541841C (zh) 2009-09-16
TW502464B (en) 2002-09-11
DE10039433A1 (de) 2002-02-28
WO2002015287A1 (de) 2002-02-21
EP1307927B1 (de) 2010-09-22
DE50115638D1 (de) 2010-11-04
JP2004507095A (ja) 2004-03-04
EP1307927A1 (de) 2003-05-07
CN1446380A (zh) 2003-10-01
JP2007073998A (ja) 2007-03-22

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, 93049 REGENSBURG,

R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033240000

R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee